Claims
- 1. A developer solution for an actinic ray -sensitive resist layer which comprises:
- (a) water or a liquid mixture mainly composed of water as a solvent;
- (b) a nitrogen-containing organic basic compound dissolved in said solvent in a concentration of from 1 to 5% by weight; and
- (c) an anionic surface active agent which is a diphenyl ether compound represented by the general formula: ##STR2## in which R.sup.1 is an alkyl or alkoxy group having 5 to 18 carbon atoms, R.sup.2 is a hydrogen atom or an alkyl or alkoxy group having 5 to 18 carbon atoms, R.sup.3 is an N-substituted ammonium sulfonate group of the general formula:
- --SO.sub.3 NR.sup.6.sub.4
- each R.sup.6 being, independent from the others, a methyl, ethyl, hydroxymethyl or 2-hydroxyethyl group and R.sup.4 and R.sup.5 are each a hydrogen atom or an N-substituted ammonium sulfonate group of the general formula SO.sub.3 NR.sup.6.sub.4, R.sup.6 having the same meaning as defined above, dissolved in the solvent in a concentration in the range from 0.05 to 5% by weight.
- 2. The developer solution for an actinic ray-sensitive resist layer as claimed in claim 1 in which the nitrogen-containing organic basic compound as the component (b) is a lower-alkyl quaternary ammonium compound selected from the group consisting of tetramethyl ammonium hydroxide, trimethyl 2-hydroxyethyl ammonium hydroxide and mixtures thereof.
- 3. The developer solution for an actinic ray-sensitive resist layer as claimed in claim 2 in which the lower-alkyl quaternary ammonium compound is tetramethyl ammonium hydroxide.
- 4. The developer solution for an actinic ray-sensitive resist layer as claimed in claim 1 in which R.sup.6 is a methyl group.
- 5. The developer solution for an actinic ray-sensitive resist layer as claimed in claim 1 in which R.sup.6 is an hydroxymethyl group.
- 6. The developer solution for an actinic ray-sensitive resist layer as claimed in claim 1 in which the concentration of the component (c) is in the range from 0.1 to 3% by weight.
- 7. The developer solution for an actinic ray-sensitive resist layer as claimed in claim 1 in which R.sup.1 is an alkyl group or alkoxy group having 5 to 18 carbon atoms, R.sup.2 is hydrogen, R.sup.5 is hydrogen and the group denoted by R.sup.4 is the N-substituted ammonium sulfonate group of the general formula.
- 8. The developer solution for an actinic ray-sensitive resist layer as claimed in claim 1 in which R.sup.6 is an ethyl group.
- 9. The developer solution for an actinic ray-sensitive resist layer as claimed in claim 1 in which R.sup.6 is a 2-hydroxyethyl group.
Parent Case Info
This application is a continuation of Ser. No. 07/882,854 filed May 14, 1992, which is now abandoned.
US Referenced Citations (5)
Number |
Name |
Date |
Kind |
4576903 |
Baron et al. |
Mar 1986 |
|
4610953 |
Hashimoto et al. |
Sep 1986 |
|
4762771 |
Matsumoto et al. |
Aug 1988 |
|
4820621 |
Tanaka et al. |
Apr 1989 |
|
4880724 |
Toyama et al. |
Jul 1989 |
|
Foreign Referenced Citations (4)
Number |
Date |
Country |
61-18944 |
Jan 1986 |
JPX |
61-167948 |
Jul 1986 |
JPX |
61-151537 |
Jul 1986 |
JPX |
1367830 |
Sep 1974 |
GBX |
Continuations (1)
|
Number |
Date |
Country |
Parent |
882854 |
May 1992 |
|