Patent Grant
11929358
The present disclosure relates to the field of display technologies, and in particular, relates to a display backplate and a method for manufacturing the same, a display panel and a method for manufacturing the same, and a display device.
The micro light-emitting diode (micro-LED) display technology refers to such a technology that an LED is shrunk to a size below 100 μm and manufactured into a display panel. The micro-LED display panel has various advantages such as high brightness, high contrast, ultra-high resolution and color saturation, long service life, high response speed, energy saving, and high adaptability to a wide range of environments.
In the process of manufacturing the micro-LED display panel, a display backplate and the micro-LED need to be separately manufactured, and then the display backplate and the micro-LED are bonded to each other.
Embodiments of the present disclosure provides a display panel and a method for manufacturing the same, and a display device.
At least one embodiment of the present disclosure provides a display backplate. The display backplate includes:
As one implementation of embodiments of the present disclosure, the connection structure is made of any one or an alloy of copper and aluminum.
As one implementation of embodiments of the present disclosure, the connection structure includes a main body portion and a conductive portion, wherein the conductive portion is disposed on a surface of the main body portion distal from the array substrate;
Optionally, a difference between the thicknesses of the conductive portion at any positions is less than a predetermined value.
Optionally, the conductive portion is made of any one of or an alloy of copper and aluminum.
Optionally, the main body portion includes an organic insulating portion and an inorganic insulating portion, wherein the inorganic insulating portion is disposed between the organic insulating portion and the conductive portion.
Optionally, the maximum distance between the connection structure and the array substrate is in the range of between 3 micrometers and 5 micrometers.
Optionally, the connection structure is disposed on a first side of the array substrate; the display backplate further includes a pad disposed on a second side of the array substrate; and the second side is opposite to the first side.
Optionally, the display backplate further includes a package layer, wherein the pad is disposed between the array substrate and the package layer.
Optionally, the display backplate further includes a base disposed on the surface of the array substrate, wherein the base includes recesses in one-to-one correspondence with the connection structures; an area of a second section of the recess is negatively correlated with a distance between the second section and the surface of the array substrate; the second section is parallel to the surface of the array substrate; and the connection structure is inside the corresponding recess.
Exemplarily, the base includes a substrate, a separable layer and a resin layer which are sequentially stacked, and the recess is disposed in the resin layer.
Exemplarily, the base includes a substrate, the recess is disposed in the substrate, and the display backplate further includes a separable layer disposed between the base and the connection structure.
Exemplarily, the separable layer is made of any one of an organic resin material and GaN.
At least one embodiment of the present disclosure provides a display device. The display device includes:
Optionally, a material hardness of the connection structure is greater than a material hardness of the first electrode and the second electrode.
Optionally, a surface, in contact with the connection structure, of the first electrode or the second electrode is provided with a protrusion surrounding the connection structure.
At least one embodiment of the present disclosure provides a display device. The display device includes the display panel according to any one of the described above,
At least one embodiment of the present disclosure provides a method for manufacturing a display backplate. The method includes:
Optionally, forming the plurality of pairs of connection structures includes:
As one implementation of embodiments of the present disclosure, forming the connection structure at least in the recess includes:
As one implementation of embodiments of the present disclosure, forming the connection structure at least in the recess includes:
Optionally, the method further includes:
Exemplarily, the base includes a substrate, a separable layer, and a resin layer which are sequentially stacked, wherein the recess is disposed in the resin layer; and removing the base includes:
Exemplarily, the base includes a substrate, and the recess is disposed in the substrate; the display backplate further includes a separable layer disposed between the base and the connection structure; and removing the base includes:
Exemplarily, the separable layer is made of an organic resin material; and separating the substrate and the separable layer from the connection structure includes:
At least one embodiment of the present disclosure provides a method for manufacturing a display panel. The method includes:
Optionally, transferring the plurality of micro-LEDs onto the display backplate at the same time includes:
For clearer descriptions of the objects, technical solutions and advantages in the embodiments of the present disclosure, the present disclosure is described in detail below in combination with the accompanying drawings. Apparently, the described embodiments are merely some embodiments, rather than all embodiments, of the present disclosure. Based on the embodiments of the present disclosure, all other embodiments derived by a person of ordinary skill in the art without creative efforts shall fall within the protection scope of the present disclosure.
Generally, a bonding process of a display backplate and a micro-LED includes the following steps. Firstly, an inverted conical sharp groove is etched on a silicon wafer. Next, copper (Cu) conical tips are formed in the sharp groove. Subsequently, the micro-LED is transferred onto the silicon wafer with the conical tips using a transferring technique, wherein an N electrode and a P electrode of the micro-LED are aligned with the bottoms of the two conical tips respectively, and the bottom of the conical tip refers to an end, having a larger area, of the conical tip. Then, the first electrode and the second electrode of the micro-LED are welded to the conical tips respectively by eutectic welding, and the conical tips fixed to the micro-LED are separated from the silicon wafer by etching the silicon wafer. Finally, the micro-LED is transferred onto the display backplate by a transferring process, and the conical tips are aligned with and form solid electrical connection with the first electrode and the second electrode of the display backplate.
In the related art, the first electrode and the second electrode of the micro-LED are aligned and connected to the bottoms of the conical tips. As the micro-LED in the micro-LED display panel has a small size (below 100 micrometers) and high density, there are high requirements on alignment when a plurality of micro-LEDs are connected to the bottoms of conical tips at the same time and thus the operation is difficult. Consequently, only one micro-LED is connected to the bottoms of the conical tips every time in the current bonding process. However, by taking a standard 4 k (3840×2160) micro-LED display screen as an example, this standard 4 k micro-LED display screen has 8,294,400 pixels in total, and 24,883,200 Micro-LED chips in total which are designed corresponding to red, green and blue (RGB) sub-pixels. If one micro-LED is bonded to conical tips every time, the time cost and manufacturing cost are very high. In addition, in the above micro-LED bonding process, the transferring process is used twice. As a result, the manufacturing process and the micro-LED display panel is complex and thus the time cost and manufacturing cost are very high. Due to the above two reasons, the current micro-LED bonding is not suitable for high-resolution and large-size display panels.
With reference to
In the display backplate, the main body of the display backplate is the TFT base plate and the connection structure is disposed on one surface of the base plate. As the area of the first section of the connection structure is negatively correlated with the distance between the first section and the surface of the array substrate, namely, the connection structure has a protruding tip portion, and an orthographic projection of the tip portion on the array substrate falls within an orthographic projection of the bottom of the connection structure on the array substrate, the micro-LED is connected to the tip portion of the connection structure when the micro-LED is bonded to the display backplate. A gap between the tip portions of the connection structures is greater than a gap between the bottoms of the connection structures, such that when the connection structure is bonded to the micro-LED, even if there is a certain deviation, the electrical connection between the connection structure and the micro-LED may still be ensured, the requirements on alignment are low, and all micro-LEDs may be connected to the tip portions of the connection structures at the same time. Thus, the manufacturing process is simplified, and the time and manufacturing costs are reduced. In addition, as the connection structure is manufactured on the display backplate, all that is needed is to transfer the micro-LEDs onto the display backplate, such that the transferring process is used once. Thus, the manufacturing process is further simplified, and the time and manufacturing costs are further reduced. Therefore, the display backplate can be applied to high-resolution and large-size micro-LED display panels to achieve large-area, efficient and high-yield micro-LED bonding.
By taking the conical shape or the pyramidal shape as an example, the connection structure 200 is a conical tip and a tip portion of the conical tip protrudes along the direction distal from the array substrate 100. The conical tips are disposed in pairs, and each pair of conical tips includes a first conical tip and a second conical tip. The tip portion of the first conical tip is connected to a first electrode of the micro-LED, and the tip portion of the second conical tip is connected to a second electrode of the micro-LED.
In the embodiment of the present disclosure, as one implementation, the connection structure 200 is a connection structure integrally formed. At this time, the entire connection structure 200 is made of a conductive metal. For example, the connection structure is made of copper (Cu) or aluminum (Al). By manufacturing the connection structure with these two materials, high conductivity and mechanical strength may be ensured.
As another implementation, the connection structure 200 consists of two portions.
The conductive portion 202 being conformal to the surface of the main body portion 201 distal from the array substrate 100 means that the shape of the surface of the main body portion 201 distal from the array substrate 100 is similar to the shape of the conductive portion 202. As shown in
In this implementation, although the connection structure 200 consists of two portions, such a connection structure 200 may likewise ensure the electrical connection effect and mechanical strength due to the cooperation of the conductive portion 202 and the main body portion 201.
With reference to
Exemplarily, in this connection structure, the conductive portion 202 is made of the same material as the above solid connection structure. For example, the conductive portion 202 is made of copper or aluminum. High conductivity and mechanical strength of the conductive portion may be ensured by manufacturing the conductive portion with copper or aluminum.
Exemplarily, in this connection structure, the main body portion 201 includes an organic insulating portion 211A and an inorganic insulating portion 212A. The inorganic insulating portion 212A is disposed between the organic insulating portion 211A and the conductive portion 202. By filling a hollow portion of metal with a combination of these materials, the connection structure 202 may be sufficiently supported, and in addition, the inorganic material may achieve better water and oxygen resistance. Moreover, the combination between metal and the inorganic material may be ensured by disposing the organic material between the metal and the inorganic material.
Exemplarily, the inorganic insulating portion 212A may be made of silicon oxide (SiO) and the organic insulating portion 211A may be made of polyimide (PI).
Exemplarily, the maximum distance (shown as d in
Exemplarily, the connection structure 202 may have a height of 3 micrometers, and the connection structure 202 having the height of 3 micrometers may be in contact with the first electrode and the second electrode of the micro-LED.
Herein, the height of the connection structure 202 refers to a distance between the top of the protruding end of the connection structure and the surface of the array substrate.
In the embodiment of the present disclosure, the density of the connection structures 202, that is, the size and spacing of the bottoms of the connection structures may be determined according to the density of the micro-LEDs. Within the allowable density range of the micro-LEDs, it is ensured that the connection structures 202 have a sufficiently large size and spacing as soon far possible, thereby ensuring the high conductivity of the single connection structure 202 and the insulation between adjacent connection structures 202.
By disposing the pad, it is ensured that the array substrate may be bonded to other devices while being bonded to the micro-LEDs.
Exemplarily, the pad 300 may be an integrated circuit (IC) pad, such that the array substrate may be connected to an IC. Thus, a signal provided by the driving IC may be finally transmitted to the micro-LED through the TFT to drive the micro-LED to emit light.
Exemplarily, the pads 300 may be divided into a plurality of groups, and each group of pads 300 includes a common pad 301, a gate pad 302 and a data pad 303.
Each TFT 100A of the array substrate 100 corresponds to a pair of connection structures 200 and a group of pads.
For each TFT, a gate is connected to the corresponding gate pad, a source is connected to the corresponding data pad, and a drain is connected to one of the pair of connection structures 200. The common pad corresponding to each TFT is connected to the other of the pair of connection structures 200.
Optionally, with reference to
Herein, the base 500 is a basis for manufacturing the connection structure 200, that is, the connection structure 200 is manufactured on the base 500. During manufacturing, the recess 501 matching the connection structure 200 in shape is manufactured firstly and then the connection structure 200 is manufactured in the corresponding recess 501. After the connection structure and the array substrate are manufactured, the base 500 may remain to protect the connection structure 200 before the display backplate is used, and may be removed when the display backplate is subsequently used.
With reference to
In the display backplates shown in
In the display backplates shown in
When the organic resin material is used, as the adhesion of the organic resin material to the glass is greater than the adhesion of the organic resin material to resin or metal, the substrate and the separable layer may be separated with a mechanical force. When GaN is used, as the GaN layer is decomposed after laser irradiation, the substrate and the separable layer may be separated by laser irradiation.
Exemplarily, the organic resin material may be heat-resistant organic resin. For example, the organic resin material may be a mechanically dissociated adhesive (DBL). When the heat-resistant organic resin is used, the separable layer 511 has a thickness equal to or greater than 50 nm.
In the embodiment of the present disclosure, the display backplate may include both the package layer 400 and the base 500 above for protecting the pad and the connection structure at the same time. During use, the package layer 400 and the base 500 are removed.
Exemplarily, the thin-film transistor 100A is a low temperature polysilicon (LTPS) thin-film transistor. The LTPS thin-film transistor has good current performance and is suitable for a current-driven micro-LED display panel. The LTPS thin-film transistor is usually of a top-gate structure (a structure that a gate of the thin-film transistor is above the active layer), as shown in
Further, the array substrate 100 further includes a light-shielding portion 2143. The light-shielding portion 2143 is disposed between the connection structure 200 and the active layer 113. An orthographic projection of the active layer 113 on the base 500 falls within an orthographic projection of the light-shielding portion on the base 500. The light-shielding portion 2143 disposed in such a way is configured to shield light to prevent the light from irradiating the active layer 113.
Further, the array substrate 100 further includes a first wiring layer 214 for connecting the gate layer 115 with the connection structure 200. The first wiring layer 214 includes source wiring and common electrode wiring. Both the source wiring and the common electrode wiring are connected to the conductive portion. The above light-shielding portion 2143 may be disposed on the first wiring layer 214.
Further, the array substrate 100 further includes an inorganic insulating layer 212 and an organic insulating layer 211. The organic insulating layer 211 is disposed between the first wiring layer 214 and the inorganic insulating layer 212. Herein, the organic insulating layer 211 may exert a planarization effect, and further achieve a support effect by filling the recess, such that the entire connection structure is more secure. The organic insulating portion 211A above is disposed on the organic insulating layer 211, and the organic insulating portion 211A is a portion of the organic insulating layer 211 protruding from the surface of the array substrate. The inorganic insulating portion 212A is disposed on the inorganic insulating layer 212, and the inorganic insulating portion 212A is a portion of the inorganic insulating layer 212 protruding from the surface of the array substrate.
Exemplarily, the gate layer 115 includes a gate, a gate line, a common electrode signal line, and source wiring. The gate is connected to the gate line. The common electrode signal line is connected to the common electrode wiring, and the source wiring is connected to the source wiring of the first wiring layer 214.
Exemplarily, the source-drain layer 117 includes a source, a drain, a gate wiring and a common electrode wiring. The source and the drain are connected to the active layer 113. The source is also connected to the source wiring of the gate layer 115. The gate wiring is connected to the gate line of the gate layer 115, and the common electrode wiring is connected to the common electrode signal line of the gate layer 115.
Herein, the differences between the bases and the connection structures have been described above. The design differences between the film layers of the thin-film transistors, the wiring, and the light-shielding portions are described below.
The array substrate 100 may include an isolating layer 111, an insulating layer 2140, a buffer layer 112, an active layer 113, a gate insulating layer 114, a gate layer 115, an interlayer insulating layer 116, a source-drain layer 117, and a planarization layer 118, which are sequentially stacked. The active layer 113, the gate insulating layer 114, the gate layer 115, the interlayer insulating layer 116, and the source-drain layer 117 constitute the thin-film transistor 100A, and the common electrode signal line 100B and the source-drain layer 117 are disposed on the same layer.
Further, the array substrate 100 further includes a first wiring layer 214. The first wiring layer 214 includes a source wiring and a common electrode wiring 2142. Both the source wiring and the common electrode wiring are connected to the connection structure.
Exemplarily, the gate layer 115 includes a gate and a gate line. The gate is connected to the gate line.
Exemplarily, the source-drain layer 117 includes a source, a drain, gate wiring and a common electrode signal line. The source and the drain are connected to the active layer 113. The source is also connected to the source wiring of the first wiring layer 214. The gate wiring is connected to the gate line of the gate layer 115, and the common electrode signal line is connected to the common electrode wiring of the first wiring layer 214.
In the structure shown in
In addition to different film layer structures,
Exemplarily, in
The film layer structures shown in
Herein, one of the first electrode 21 and the second electrode 22 is an N electrode and the other is a P electrode. Generally, the electrode connected to the common electrode signal line through the connection structure 200 is the N electrode and the electrode connected to the thin-film transistor through the connection structure 200 is the P electrode. When the display panel is in operation, the N electrodes of the various micro-LEDs 20 apply the same electrical signal under the control of the common electrode signal line, and the magnitude of the electrical signal of the P electrodes of different micro-LEDs 20 is determined based on the brightness that the micro-LED 20 needs to display, and the thin-film transistor is responsible for writing the electric signal of the P electrode.
With reference to
Exemplarily, the resin material layer 600 may be made of an epoxy resin or the like.
As one implementation of the embodiment of the present disclosure, the material hardness of the connection structure 200 is greater than the material hardness of the first electrode 21 and the second electrode 22. In this implementation, the material hardness of the connection structure is greater than the material hardness of the first electrode and the second electrode, such that the connection structure may be pierced into the electrode, and thus the effects of electrical connection and mechanical connection between the connection structure and the electrodes are better.
Exemplarily, the connection structure 200 is made of copper or aluminum, and the first electrode 21 and the second electrode 22 may be made of indium (In). The hardness of indium is less than that of copper or aluminum, such that the connection structure may be pierced into the electrode.
In this implementation, the connection structure 200 is pierced into the first electrode 21 or the second electrode 22 to form the protrusion 211, such that the effects of electrical connection and mechanical connection between the connection structure 200 and the electrode are better.
As another implementation of the embodiment of the present disclosure, the material hardness of the connection structure 200 may be less than or equal to the material hardness of the first electrode 21 and the second electrode 22. For example, the connection structure 200 may be made of the same material as the first electrode 21 and the second electrode 22.
An embodiment of the present disclosure further provides a display device including the display panel as described above.
In specific implementation, the display device according to the embodiment of the present disclosure may be any product or component having a display function, such as a mobile phone, a tablet computer, a television, a display, a laptop computer, a digital photo frame, or a navigator.
In step 31, a plurality of pairs of connection structures are formed.
In step 32, an array substrate is formed, on which the plurality of pairs of connection structures is disposed, wherein the array substrate includes a plurality of thin-film transistors and a common electrode signal line, wherein at least one of the plurality of thin-film transistors is connected to one of a pair of connection structures and the common electrode signal line is connected to the other of the pair of connection structures.
Herein, the area of a first section of the connection structure is negatively correlated with a distance between the first section and the surface of the array substrate, and the first section is parallel to the surface of the array substrate.
Step 31 of forming the plurality of pairs of connection structures may include: providing a base; forming a recess on one side of the base, wherein the area of a second section of the recess is negatively correlated with a distance between the second section and the surface of the array substrate, and the second section is parallel to the surface of the array substrate; and the connection structure is at least formed in the recess. In this implementation, the recess is manufactured firstly for facilitating the manufacturing of the connection structure.
As one implementation of the embodiment of the present disclosure, the step of forming the connection structure at least in the recess includes: forming a seed layer i in the recess; and forming a metal-plated layer on the seed layer. In this implementation, a solid connection structure may be manufactured by electroplating.
As another implementation of the embodiment of the present disclosure, the step of forming the connection structure at least in the recess includes: sequentially forming a conductive portion and a main body portion in the recess, wherein an orthographic projection of the main body portion on the array substrate falls within an orthographic projection of the conductive portion on the array substrate, the conductive portion is conformal to the surface of the main body portion distal from the array substrate, and the main body portion is made of an insulating material. In the present disclosure, the connection structure may consist of two portions, and the connection structure consisting of two portions may likewise ensure the electrical connection effect and mechanical strength.
Optionally, the method further includes: the base is removed. By removing the base, the display backplate may be directly bonded to the micro-LED when the display backplate is used subsequently.
As one implementation of the embodiment of the present disclosure, the base includes a substrate, a separable layer, and a resin layer which are sequentially stacked, and the recess is disposed in the resin layer. The step of removing the base includes:
In this implementation, the connection structure is manufactured on the resin layer. During separation, the separable layer is separated from the resin layer firstly, and the resin layer is removed.
Herein, the resin layer may be removed by dry etching.
As another implementation of the embodiment of the present disclosure, the base includes a substrate, and the recess is disposed in the substrate. The display backplate further includes a separable layer disposed between the base and the connection structure. The step of removing the base includes:
In this implementation, the connection structure is manufactured on the substrate. During separation, the separable layer is directly separated from the connection structure.
Exemplarily, the separable layer is made of an organic resin material. The step that the substrate and the separable layer are separated from the connection structure includes:
Alternatively, the separable layer is made of GaN, and the step of separating the substrate and the separable layer from the connection structure includes:
In this implementation, as the adhesion of the organic resin material layer to glass is greater than the adhesion of the organic resin material to resin or metal, the substrate and the organic resin material layer may be separated with the mechanical force.
As the GaN layer is decomposed after laser irradiation, the substrate may be separated by laser irradiation.
In step 41, a separable layer is formed on a substrate.
As shown in
In step 42, a resin layer is formed on the separable layer.
As shown in
In step 43, a recess is formed in the resin layer.
As shown in
In the embodiment of the present disclosure, the connection structure is manufactured through PI via (TPV) technique. PI is a kind of polymer resin material. When the recess is formed, a photoresist (PR) may be used as an etching barrier layer, and the recess is formed by dry etching (such as inductively coupled plasma). In this process, the PR is used as the etching barrier layer. As the pattern of the PR itself has an inclination angle (θ) at the edges, the pattern etched may be conical by controlling an etched opening and height. The width d and height h of the etched opening should satisfy the following condition: d=2 h/an (θ).
In step 44, a conductive portion and a main body portion are sequentially formed in the recess to obtain a connection structure.
An orthographic projection of the main body portion on the array substrate falls within an orthographic projection of the conductive portion on the array substrate. The conductive portion is conformal to the surface of the main body portion distal from the array substrate. The main body portion is made of an insulating material.
As shown in
With reference to
The conductive portion 202 has a shape similar to that of the inner side wall of the recess 501. The conductive portion 202 may be made of copper, aluminum, or the like by magnetron sputtering and patterning. The conductive portion 202 has a specific thickness and may cover the inner side wall of the recess 501. Exemplarily, the conductive portion may also be manufactured by electroplating. For example, a seed layer is manufactured firstly and the seed layer is electroplated to form a metal-plated layer, thereby obtaining the conductive portion. Exemplarily, the seed layer is formed to have a thickness in the range from 1 nm to 10 nm. Exemplarily, any metal or alloy, which has relatively high adhesion to the separable layer and a relatively good ability to prevent the metal to be electroplated from diffusing may be used as a material for manufacturing the seed layer. Examples of suitable metal materials for manufacturing the seed layer include: copper, titanium, tantalum, chromium, titanium tungsten alloy, tantalum nitride, and titanium nitride. The metal-plated layer may be made of the same material as the seed layer. Exemplarily, when the seed layer is made of copper, if the metal-plated layer is made of copper, the seed layer and the metal-plated layer finally form an integrated structure. If the seed layer is made of other materials, the seed layer and the metal-plated finally form a double-layer structure.
The organic insulating portion 211A may be made of PI, and the inorganic insulating portion 212A may be made of SiO. During manufacturing, the inorganic insulating layer 212 may be formed firstly by deposition, and then the organic insulating layer 211 is formed by coating. Herein, the organic insulating layer 211 may play a role of planarization on the one hand, and play a role of supporting on the other hand by filling the recess, such that the entire connection structure is securer. The organic insulating portion 211A above is disposed on the organic insulating layer 211, and the organic insulating portion 211A is a portion of the organic insulating layer 211 protruding from the surface of the array substrate; and the inorganic insulating portion 212A is disposed on the inorganic insulating layer 212, and the inorganic insulating portion 212A is a portion of the inorganic insulating layer 212 protruding from the surface of the array substrate.
It should be noted that during the manufacturing of the conductive portion 202, a wiring connected to the conductive portion is also manufactured, which facilitates connection between the wiring subsequently manufactured and the conductive portion.
In step 45, a first wiring layer is manufactured.
As shown in
As shown in
In step 46, a buffer layer is formed on the first wiring layer.
As shown in
In step 47, the active layer is formed on the buffer layer.
As shown in
In step 48, a gate insulating layer is formed on the active layer.
As shown in
In step 49, a gate layer is formed on the gate insulating layer.
As shown in
In step 50, an interlayer insulating layer is formed on the gate layer.
As shown in
In step 51, a source-drain layer is formed on the interlayer insulating layer.
As shown in
In step 52, a planarization layer is formed on the source-drain layer.
As shown in
In step 53, a pad is formed on the planarization layer.
As shown in
In step 54, a package layer is formed on the pad.
A package layer 400 is formed on the pad 300 to obtain the display backplate as shown in
In step 61, a recess is formed in a substrate.
With reference to
In the embodiment of the present disclosure, the recess 501 in the glass substrate may be manufactured as follows.
The glass substrate is irradiated with laser having a specific wavelength and a region irradiated with the laser is a region in which the recess needs to be formed. Under laser irradiation, the glass substrate is denatured. Herein, when a laser is used to irradiate the glass substrate, the laser may be controlled to move to sequentially irradiate corresponding positions in which various recesses need to be formed.
The glass substrate is etched with a hydrofluoric acid (HF). Since the hydrofluoric acid has different etching ratios for the irradiated and unirradiated regions on the glass substrate, the recesses are formed in the regions irradiated by the laser.
During etching by the hydrofluoric acid, the entire upper surface of the glass substrate has hydrofluoric acid. In the etching process, the reaction between hydrofluoric acid at the bottom and the glass substrate irradiated by the laser may continuously consume the hydrofluoric acid, and the hydrofluoric acid at the bottom is not supplemented as fast as the hydrofluoric acid at the top, such that the concentration of hydrofluoric acid at the top is higher than that of the hydrofluoric acid at the bottom. As a result, the etched opening has a large upper portion and a small lower portion. That is, the etched opening takes the shape of an inverted cone, and is the recess required by the embodiment of the present disclosure and used for manufacturing the connection structure. The shape of the recess is controlled by controlling the etching time.
In step 62, a separable layer is formed on the substrate.
With reference to
In step 63, a seed layer is formed in the recess in which the separable layer is formed.
Exemplarily, the seed layer is formed to have a thickness in the range from 1 nm to 10 nm.
Exemplarily, any metal or alloy which has a relatively high adhesion to the separable layer and a relatively good ability to prevent the metal to be electroplated from diffusing may be used as a material for manufacturing the seed layer. Examples of suitable metal materials for manufacturing the seed layer include: copper, titanium, tantalum, chromium, titanium tungsten alloy, tantalum nitride, and titanium nitride.
With reference to
In step 64, a metal-plated layer is formed on the seed layer to obtain the connection structure.
The metal-plated layer may be made of the same material as the seed layer. Exemplarily, when the seed layer is made of copper, if the metal-plated layer is made of copper, the seed layer and the metal-plated layer finally form an integrated structure. If the seed layer is made of other materials, the seed layer and the metal-plated finally form a double-layer structure.
With reference to
It should be noted that during the manufacturing of the connection structure, wiring connected to the connection structure is also manufactured, which facilitates connection between the wiring subsequently manufactured and the connection structure.
In step 65, an isolating layer is formed on the connection structure.
With reference to
In this implementation, the isolating layer 111 plays the same role as the organic insulating layer and the inorganic insulating layer in
In step 66, a first wiring layer is manufactured.
As shown in
As shown in
In step 67, an insulating layer is formed on the first wiring layer.
As shown in
In step 68, a light-shielding portion is formed on the insulating layer.
As shown in
In step 69, a buffer layer is formed on the light-shielding portion.
As shown in
In step 70, an active layer is formed on the buffer layer.
As shown in
In step 71, a gate insulating layer is formed on the active layer.
As shown in
In step 72, a gate layer is formed on the gate insulating layer.
As shown in
In step 73, an interlayer insulating layer is formed on the gate layer.
As shown in
In step 74, a source-drain layer is formed on the interlayer insulating layer.
As shown in
In step 75, a planarization layer is formed on the source-drain layer.
As shown in
In step 76, a pad is formed on the planarization layer.
As shown in
In step 77, a package layer is formed on the pad.
The package layer 400 is formed on the pad 300 to obtain the display backplate as shown in
In step 81, a display backplate is provided.
The display backplate may be the display backplate as shown in any one of
If the display backplate as shown in
If the display backplate as shown in
As shown in
When the display backplate as shown in
As shown in
In step 82, a plurality of micro-LEDs is transferred onto the display backplate at the same time, wherein any one of the plurality of micro-LED includes a first electrode and a second electrode which are respectively connected to a pair of connection structures.
In the embodiment of the present disclosure, the step that the plurality of micro-LEDs is transferred onto the display backplate at the same time includes the following steps.
The display backplate is coated with a layer of resin material doped with a solvent.
The plurality of micro-LEDs is transferred onto the display backplate at the same time with a mass transferring technique, wherein the first electrode and the second electrode of the micro-LED are in contact with the connection structures. At this time, the first electrode and the second electrode of the micro-LED enter the resin material and correspond to the connection structure. Exemplarily, the connection structure connected to the common electrode signal line is connected to an N electrode of the micro-LED and the connection structure connected to the thin-film transistor is connected to a P electrode of the micro-LED.
The resin material is heated to solidify the resin material. As the resin material is doped with the solvent, the solvent evaporates during heating. As a result, the resin material is solidified.
Herein, the temperature of heating for solidification may be 140 degrees Celsius.
Herein, the mass transferring technique refers to transferring a large number of micro-LEDs onto the display backplate at the same time by means of vacuum, static electricity, adhering and the like. In the above process, the surface of the display backplate with the connection structure face upwards for facilitating bonding to the micro-LED. After the display backplate is coated with the resin material, the resin material will overflow around when the micro-LED is transferred onto and bound to the display backplate. Specifically, when the micro-LED is transferred onto the display backplate, the micro-LED needs to be submerged into the resin material by certain pressure, such that the first electrode and the second electrode of the micro-LED are in contact with the tops of the connection structures. The immersion of the micro-LED will cause the resin material to overflow around. After the first electrode and the second electrode of the micro-LED are in contact with the tops of the connection structures, the resin material is solidified by heating. When the resin material is solidified, the surface tension may drive the micro-LED to press downwards. At the top of the connection structure, due to the downward pressure of the micro-LED, the top of the connection structure punctures the resin material wrapping the top of the connection structure, thereby achieving the electrical connection between the micro-LED and the display backplate. In addition, when the material hardness of the first electrode and the second electrode is relatively smaller, the top of the connection structure finally pierces into the electrode under the above tension, thereby further ensuring the electrical connection between the Micro-LED and the display backplate. The solidification of the resin material also ensures the secure connection.
As shown in
In this implementation, since the resin material is doped with the solvent, the heating may cause evaporation of the solvent, thereby causing the resin material to shrink due to heating. The pressure of the shrinkage results in secure electrical connection between the first electrode and the second electrode of the micro-LED, and the connection structures.
After the above processes of manufacturing the display panel according to the present disclosure are completed, the package layer on the display backplate may also be removed (for example, by 02 plasma etching) to expose the pad on the display backplate. The pad is bonded to the driving IC and the like, such that the assembly of the display panel and the driving circuit is completed.
In the embodiment of the present disclosure, the micro-LED and the IC are bonded to two surfaces of the display backplate. In this case, the display panel may achieve an ultra-narrow frame, and a plurality of display panels may be spliced to form a giant screen to achieve seamless splicing.
Other embodiments of the present disclosure may be apparent to those skilled in the art from consideration of the specification and practice of the present disclosure. This application is intended to cover any variations, uses, or adaptations of the present disclosure following the general principles thereof and including common knowledge or commonly used technical means which are not disclosed herein. The specification and embodiments are considered to be exemplary ones only, and the scope and spirit of the present disclosure are subject to the appended claims.
The present disclosure is not limited to the exact construction that has been described above and illustrated in the accompanying drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure is only subject to the appended claims.
This application is a continuation application of U.S. application Ser. No. 16/765,530, filed on May 20, 2020, now U.S. Patent /insert later/, which is a 371 of PCT/CN2019/089543, filed May 31, 2019, the contents of which are incorporated herein in their entirety.
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