Claims
- 1. A method for producing an image which comprises providing on a substrate a layer of an actinic radiation sensitive dry developable photoresist mixture containing:
- a polymeric epoxide material containing glycidyl groups;
- bis(hydroxydimethylsilyl)benzene; and
- an onium salt in an amount effective to initiate crosslinking of said polymeric epoxide material with said bis(hydroxydimethylsilyl)benzene;
- imagewise selectively exposing said mixture to a source of energy creating exposed and unexposed regions; causing said organosilicon material to crosslink with said polymeric epoxide material in said exposed regions;
- vaporizing said unexposed regions;
- and then exposing to reactive ions to remove residual material in said unexposed regions.
- 2. The method of claim 1 wherein said source of energy is deep U.V. radiation or e-beam.
- 3. The method of claim 1 wherein said source of energy is about 230 to about 290 nanometers at a dosage of about 10-15 millijoules/cm.sup.2.
- 4. The method of claim 1 wherein said source of energy is e-beam at about 10 to about 100 kilovolts.
- 5. The method of claim 1 wherein said unexposed regions are vaporized by heating at about 80.degree. C. to about 120.degree. C.
- 6. The method of claim 1 wherein said reactive ions are from oxygen plasma.
- 7. The method of claim 1 wherein the amount of the organosilicon compound in said mixture is about 5 to about 50% per mole of epoxide.
- 8. The method of claim 1 wherein said polymeric epoxide material is selected from the group of epoxidized novolacs having the average formulae: ##STR11##
- 9. The method of claim 1 wherein said polymeric epoxide has the average formula: ##STR12##
- 10. The method of claim 1 wherein said polymeric epoxide has at least 6 terminal epoxy groups.
- 11. The method of claim 1 wherein said polymeric epoxide has at least 8 terminal epoxy groups.
- 12. The method of claim 1 wherein said onium salt is an aromatic salt of a Group VIa element.
- 13. The method of claim 1 wherein said onium salt is triphenyl sulfonium hexafluoride antimonate.
- 14. The method of claim 1 wherein the amount of said onium salt is about 0.5% to about 5% by weight based upon the weight of the polymeric epoxide material.
- 15. The method of claim 1 wherein the amount of the bis(hydroydimethylsilyl)benzene in said mixture is about 10 to about 25% per mole of epoxide.
Parent Case Info
This is a divisional application of Ser. No. 07/693,999, filed on Apr. 29, 1991, U.S. Pat. No. 5,229,251.
US Referenced Citations (10)
Foreign Referenced Citations (1)
Number |
Date |
Country |
59-140267 |
Aug 1984 |
JPX |
Non-Patent Literature Citations (2)
Entry |
Iwayanagi, et al., Deep-UP Lithography, Electronic and Photonic Applications of Polymers, Advances in Chemistry Series 218, 192nd Meeting of the American Chemical Society, California, Sep. 7-12, 1986, pp. 163-166. |
MacDonald, et al., A New Oxygen Plasma Developable UV Sensitive Resist, Research Report, RJ 4834 (51095) Oct. 7, 1986 Chemistry. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
693999 |
Apr 1991 |
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