Claims
- 1. A dry etching method for etching a multilayer film (comprising a layer of an aluminum-based material stacked on a second layer of a second material different than the aluminum-based material with the aid of a pattern constituted by a layer of an organic resist material as a mask, comprising the steps of
- plasma etching at least the layer of the aluminum-based material using an etching gas containing at least one compound selected from a group consisting of chlorine compounds and bromine compounds, and
- then plasma etching said second layer using an etching gas containing a compound having sulfur and fluorine as constituent elements and providing sulfur deposits during etching.
- 2. A dry etching method according to claim 1 wherein the compound having sulfur and fluorine as constituent elements is selected from a group consisting of S.sub.2 F.sub.2, SF.sub.2, SF.sub.4 and S.sub.2 F.sub.10.
- 3. A dry etching method according to claim 2, wherein said second material is TiW.
- 4. A dry etching method according to claim 1, wherein said second material is TiW.
- 5. A dry etching method according to claim 1, which includes, after plasma etching with the etching gas having sulfur and fluorine as a constituent, removing any deposits of sulfur.
Priority Claims (2)
Number |
Date |
Country |
Kind |
3-031806 |
Jan 1991 |
JPX |
|
3-228580 |
Aug 1991 |
JPX |
|
CROSS-REFERENCE TO RELATED APPLICATIONS
This is a division of application Ser. No. 08/018,257, filed Feb. 16, 1993, which issued as U.S. Pat. No. 5,360,510 on Dec. 1, 1994, which issued as U.S. Pat. No. 5,360,510 on Nov. 1, 1994 and was a division of application Ser. No. 07/828,743 filed Jan. 31, 1992, which issued as U.S. Pat. No. 5,217,570 on Jan. 8, 1993.
US Referenced Citations (9)
Foreign Referenced Citations (4)
Number |
Date |
Country |
59-22374 |
May 1984 |
JPX |
59-210644 |
Nov 1984 |
JPX |
60-33367 |
Feb 1985 |
JPX |
61-095571 |
May 1986 |
JPX |
Non-Patent Literature Citations (7)
Entry |
"Comment on" Low-Temperature Reaction Ion Etching And Microwave Plasma Etching of Silicon; Pelletier; Appl Phys. Lett. (1988); 53 (17); abstract only. |
"Reactive Ion Etching Model For Silicon Dioxide"; Fortuno; Mat. Res. Soc. Symp Proc.; (1986); abstract only. |
"Prevention of Corrosion During The Reactive Ion Etch of Aluminum on Titanium-Tungsten"; Chang et al.; Proc.-Elect. Soc. (1985); 85-1; abstract only. |
Semiconductor World, Apr. 1989, pp. 101-106. |
Mizutani et al., "Neutral Beam Assisted Etching", Digest of Papers, 1990 3rd Microprocess Conference, Paper 8-5-3, pp. 116-117. |
Extended Abstract of the 38th Spring Meeting (1991) of the Japan Society of Applied Physics and Related Sciences, pp. 409, Subject 29p-P-6. |
Extended Abstract of the 51st Autumn Meeting (1990) of the Japan Society of Applied Physics, p. 483, Subject 27p-ZF-5. |
Divisions (2)
|
Number |
Date |
Country |
Parent |
18257 |
Feb 1994 |
|
Parent |
828743 |
Jan 1992 |
|