Claims
- 1. A method of etching a layered structure oxide ferroelectric thin film on a substrate by plasma assisted etching, comprising the steps of: placing the substrate into a chamber, introducing CHC1FCF.sub.3 gas; to the chamber and producing a glow discharge in the chamber to etch the layered structure oxide ferroelectric thin film.
- 2. The method of claim 1, wherein the glow discharge is produced by radio frequency.
- 3. The method of claim 2, wherein the radio frequency has an associated rf power of between 125 and 200 W.
- 4. The method of claim 1, wherein the glow discharge is a dc glow discharge.
- 5. The method of claim 1, wherein an additive gas is included in the chamber.
- 6. The method of claim 5, wherein said additive gas is at least one of oxygen or a noble gas.
- 7. The method of claim 6, wherein said additive gas is oxygen.
- 8. The method of claim 7, wherein the oxygen content in the chamber is between 5-50% inclusive of the total gas content.
- 9. The method of claim 1, wherein the chamber has a gas pressure, the gas pressure being less than 200 mTorr.
- 10. The method of claim 9, wherein the chamber has a gas pressure, the gas pressure being less than 125 mTorr.
- 11. The method of claim 1, wherein said layered structure oxide ferroelectric thin film comprises SrBi.sub.2 (Ta.sub.x Nb.sub.2-x)O.sub.9 (SBTN) with composition x between 0 and 2 inclusive.
- 12. The method of claim 11, wherein said layered structure oxide ferroelectric thin film is at least one of the compounds with the formula (Bi.sub.2 O.sub.2).sup.2+ (M.sub.n-1 R.sub.n O.sub.3n+1).sup.2-, where M=Ba, Pb, Sr, Bi, K, or Na; n=2, 4 or 5 and R=Ti, Nb or Ta.
- 13. The method of claim 11, wherein said substrate is one of: a semiconductor composed of at least one of Si, Si/SiO.sub.2 or GaAs; a single crystal insulator composed of at least one sapphire, ZrO.sub.2, MgO, SrTiO.sub.3, BaTiO.sub.3 or PbTiO.sub.3 ; or an integrated circuit.
- 14. The method of claim 13, wherein said substrate is coated with a conducting material comprised of at least one of: a metal electrode; a conducting oxide electrode of MO.sub.x (0<x<2) where M is at least one of Ru, Rh, Ir, Os, Re or lanthanum strontium cobaltate (LSCO); a conducting nitride electrode; or a superconducting oxide.
- 15. The method of claim 14, wherein said substrate and said conducting material coating said substrate are separated by an adhesion layer.
- 16. The method of claim 1, wherein said layered structure oxide ferroelectric thin film is at least one of SrBi.sub.2 Ta.sub.2 O.sub.9 (SBT) or SrBi.sub.2 Nb.sub.2 O.sub.9 (SBN).
- 17. A method of patterning a material, wherein the material comprises a layered structure oxide ferroelectric thin film of SrBi.sub.2 Ta.sub.2 O.sub.9 (SBT) or SrBi.sub.2 Nb.sub.2 O.sub.9 (SBN) and a substrate of Si/SiO.sub.2 /Ti/Pt, comprising:
- applying a mask over the material so that the mask covers a portion of the material and leaves an exposed portion of the material; placing the material with the applied mask into a chamber; introducing CHC1FCF.sub.3 g as into the chamber; and producing a glow discharge in the chamber to etch the exposed portion of the material.
- 18. The method of claim 17, wherein the glow discharge is produced by radio frequency.
- 19. The method of claim 17, further comprising a step of introducing O.sub.2 gas into the chamber as an additive gas.
CROSS REFERENCE TO RELATED APPLICATIONS
This is a continuation-in-part of applications Ser. Nos. 08/300,176, now abandoned 08/300,177, abandoned, and 08/300,339, issued as U.S. Pat. No. 5,478,610 all filed on Sep. 2, 1994.
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Related Publications (2)
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Number |
Date |
Country |
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300177 |
Sep 1994 |
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300339 |
Sep 1994 |
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Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
300176 |
Sep 1994 |
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