Claims
- 1. A magnetoresistive sensor comprising:
a first thick Co-alloy based reference layer comprising opposing first and second surfaces; a first spacer layer comprising a first surface contacting the first surface of the first thick Co-alloy layer and a second surface contacting a first surface of a first free layer; and a second spacer layer comprising a first surface separated from the second surface of the first free layer and a second surface contacting a first surface of a second thick Co-alloy layer.
- 2. The magnetoresistive sensor of claim 1 additionally comprising:
a first Ru layer comprising a first surface contacting the first surface of the first thick Co-alloy layer and a second surface contacting a first surface of a first thin Co-alloy layer; and a second Ru layer comprising a first surface contacting a second surface of the second thick Co-alloy layer and a second surface contacting a first surface of a second thin Co-alloy layer.
- 3. The magnetoresistive sensor of claim 1 additionally comprising:
an isolating layer comprising a first surface contacting the second surface of the first free layer and a second surface contacting a first surface of a second free layer; wherein the second free layer additionally comprises a second surface contacting the first surface of the second spacer layer.
- 4. The magnetoresistive sensor of claim 3 wherein the isolating layer further comprises TaNi.
- 5. The magnetoresistive sensor of claim 3 additionally comprising:
an antiferromagnetic layer comprising a first surface contacting a second surface of the second thick Co-alloy layer.
- 6. The magnetoresistive sensor of claim 1 wherein the thickness of the first and second thick Co-based alloy is approximately between 30 and 55 Å.
- 7. The magnetoresistive sensor of claim 1 wherein the first and second thick Co-based alloy comprises a material selected from the group consisting of CoFe, CoNiFe, CoCr, CoCrTa, CoPt, Co, FePt, CoXPt, and CoB/Pt.
- 8. The magnetoresistive sensor of claim 1 wherein the first and second spacer layers comprises a Cu-alloy.
- 9. The magnetoresistive sensor of claim 1 wherein the first and second free layer comprises NiFe.
- 10. A method of manufacturing a magnetoresistive sensor comprising:
forming a layered structure comprising:
a first thick Co-alloy layer comprising opposing first and second surfaces; a first spacer layer comprising a first surface contacting the first surface of the first thick Co-alloy layer and a second surface contacting a first surface of a first free layer; and a second spacer layer comprising a first surface separated from the second surface of the first free layer and a second surface contacting a first surface of a second thick Co-alloy layer.
- 11. The method of claim 10 additionally comprising:
depositing a first Ru layer comprising a first surface contacting the first surface of the first thick Co-alloy layer and a second surface contacting a first surface of a first thin Co-alloy layer; and depositing a second Ru layer comprising a first surface contacting a second surface of the second thick Co-alloy layer and a second surface contacting a first surface of a second thin Co-alloy layer.
- 12. The method of claim 10 additionally comprising:
depositing an isolating layer comprising a first surface contacting the second surface of the first free layer and a second surface contacting a first surface of a second free layer; wherein the second free layer additionally comprises a second surface contacting the first surface of the second spacer layer.
- 13. The method of claim 12 wherein the isolating layer further comprises TaNi.
- 14. The method of claim 12 additionally comprising:
depositing an antiferromagnetic layer comprising a first surface contacting a second surface of the second thick Co-alloy layer.
- 15. The method of claim 10 wherein the thickness of the first and second thick Co-based alloy is approximately between 30 and 55 Å.
- 16. The method of claim 10 wherein the first and second thick Co-based alloy comprises a material selected from the group consisting of CoFe, CoNiFe, CoCr, CoCrTa, CoPt, Co, FePt, CoXPt, and CoB/Pt.
- 17. The method of claim 10 wherein the first and second spacer layers comprises a Cu-alloy.
- 18. The method of claim 10 wherein the first and second free layer comprises a NiFe.
- 19. A magnetoresistive sensor comprising:
a first and second spacer layer separated by a free layer; and thick layer means for increasing the stability and reliability of the magnetoresistive sensor.
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims the benefit of the filing date of U.S. provisional application Ser. No. 60/196,661 entitled “Dual Pseudo Spin Valve Heads,” which was filed on Apr. 12, 2000.
Provisional Applications (1)
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Number |
Date |
Country |
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60196661 |
Apr 2000 |
US |