Claims
- 1. A nitride read only memory (NROM) cell comprising:
a charge trapping region comprising at least a nitride layer; a drain region and a source region; and a first and a second charge storage area within said nitride layer, said first charge storage area being close to said drain region and said second charge storage area being close to said source region; wherein each said charge storage area is adapted to be programmed to different voltage levels; and wherein said drain region acts as a source and said source region acts as a drain when programming said second charge storage area.
- 2. A nitride read only memory (NROM) cell comprising:
a charge trapping region comprising at least a nitride layer; a drain region and a source region; and a first and a second charge storage area within said nitride layer, said first charge storage area being close to said drain region and said second charge storage area being close to said source region; wherein each said charge storage area is adapted to store multi-level bits; and wherein said drain region acts as a source and said source region acts as a drain when programming said second charge storage area.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] The present application is a continuation application of U.S. Ser. No. 09/761,818, filed Jan. 18, 2001, which application is incorporated herein by reference.
Continuations (1)
|
Number |
Date |
Country |
Parent |
09761818 |
Jan 2001 |
US |
Child |
10155215 |
May 2002 |
US |