Number | Date | Country | Kind |
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9-190947 | Jul 1997 | JPX |
Number | Name | Date | Kind |
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5061985 | Meguro et al. | Oct 1991 | |
5760423 | Kamakura et al. | Jun 1998 |
Entry |
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Abstract of Japanese Patent Publ. No. 07094782; dated Apr. 7, 1995. |
Abstract of Japanese Patent Publ. No. 07254733; dated Oct. 3, 1995. |
"Investigation of the Mechanism for Ohmic Contact Formation in Al and Ti/Al Contacts to n-type GaN", Appl. Phys. Lett. 70(1), Jan. 6, 1997, pp. 57-59. |