Claims
- 1. An electrode structure comprising a p-type AlxGayIn1−x−yN(0≦x≦1, 0y≦1, x+y≦1) semiconductor layer and an electrode layer formed on the semiconductor layer,wherein the semiconductor layer is doped with Mg and the electrode layer contains at least one metal hydride.
- 2. An electrode structure according to claim 1, wherein the metal hydride is selected from a group consisting of ScH2, YH2, LaH2, CeH2, PrH2, NdH2, SmH2, EuH2, YbH2, TiH2, ZrH2, HfH2, VH, NbH, TaH, PdH, TmH, ErH, HoH, DyH, TbH and GdH.
- 3. An electrode structure comprising a p-type AlxGayIN1−x−yN(0≦x≦1, 0≦y≦1, x+y≦1) semiconductor layer and an electrode layer formed on the semiconductor layer,wherein the semiconductor layer is doped with Mg and the electrode layer contains at least one metal hydride selected from a group consisting of PdH and HfH2.
- 4. An electrode structure according to claim 2, wherein the electrode layer contains Ti or Nb.
- 5. An electrode structure comprising a p-type AlxGayIN1−x−yN(0≦x≦1, 0≦y≦1, x+y≦1) semiconductor layer and an electrode layer formed on the semiconductor layer,wherein the semiconductor layer is doped with Mg and hydrogen is introduced into the semiconductor layer and the electrode layer contains at least one hydrogen absorbing metal.
- 6. An electrode structure according to claim 5, wherein the hydrogen absorbing metal is selected from a group consisting of Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Yb, Ti, Zr, Hf, V, Nb, Ta, Pd, Gd, Tb, Dy, Ho, Er and Tm.
- 7. An electrode structure according to claim 6, wherein the electrode layer contains Ti or Nb.
Priority Claims (1)
Number |
Date |
Country |
Kind |
6-167124 |
Jul 1994 |
JP |
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Parent Case Info
This application is a continuation of patent application Ser. No. 08/892,868, now U.S. Pat. No. 5,966,629 filed Jul. 15, 1997 which is a divisional of patent application Ser. No. 08/504,101, Now U.S. Pat. No. 5,701,035 filed Jul. 19, 1995.
US Referenced Citations (7)
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Non-Patent Literature Citations (2)
Entry |
Lin et al. “Low resistance ohmic contacts on wide band-gap GaN” Appl. Phys. Lett. (1994) 64: 1003-1005. |
Nakamura et al. “P-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes” Jpn. J. Appl. Phys. (1993) 32: L8-L11. |
Continuations (1)
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Number |
Date |
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Parent |
08/892868 |
Jul 1997 |
US |
Child |
09/287538 |
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US |