The present invention relates to electronic components.
As a chip-type ceramic electronic component, one including external electrodes at both ends of a ceramic body is known (for example, Japanese Patent Application Laid-Open No. 2016-31988 and Japanese Patent Application Laid-Open No. 2012-69912). Each external electrode includes a base layer (for example, a conductive layer obtained by applying and baking a conductive paste containing Cu, Ni, Ag, Pd, or the like as a main component) provided on a surface of the ceramic body, and a plating layer (for example, a Ni plating layer) formed on a surface of the base layer.
In an electronic component such as a multilayer ceramic capacitor, it is desired to reduce the thickness of the base layer of the external electrode. With a thinned base layer, the dimensions of the ceramic body can be increased and the number of internal electrodes can be increased without changing the external dimensions of the electronic component. This may improve the performance of the electronic component.
When a base layer covering an end (including an end surface and a portion of a side surface) of the ceramic body is formed, the thickness of the base layer covering the corner (portion where an end surface and two side surfaces are in contact with each other) of the ceramic body tends to be thinner than the thickness of the base layer covering the end surface and the side surface excluding the corner. Thus, when the base layer is thinned, the base layer covering the corners of the ceramic body becomes too thin, and the corners may be exposed from the base layer.
Normally, the plating layer is not formed at the corners of the ceramic body exposed from the base layer since the plating layer is formed on a surface of the conductive base layer. However, by increasing the plating time, the plating layer formed on a surface of the base layer covering the periphery of the corners can be further expanded to the surface of the corners.
However, the plating layer covering the surface of the corners is thin, and the bonding force with the ceramic body is weak. Thus, a gap is likely to be generated between the corners of the ceramic body and the plating layer. When the plating time is not enough, the plating layer cannot fully cover the corners of the ceramic body, and pinholes may be generated in the plating layer.
The presence of pinholes in the plating layer causes infiltration of a plating solution into the plating layer. Since the plating solution may damage the ceramic body and the internal electrode, infiltration of the plating solution may cause a risk of deteriorating the reliability of the electronic component.
Example embodiments of the present invention provide electronic components each able to reduce or prevent the formation of pinholes in a plating layer with a base layer not fully covering the corners of a ceramic body.
According to an example embodiment of the present invention, an electronic component includes a ceramic body, and an external electrode provided at an end of the ceramic body. Two adjacent side surfaces and an end surface of the ceramic body are in contact with each other to define a corner of the ceramic body. The external electrode includes a base layer covering the end surface and a plurality of side surfaces including the two side surfaces except for the corner, and a plating layer covering the base layer and the corner. The plating layer covering the corner has a thickness larger than a thickness of the plating layer covering a center of the end surface.
According to example embodiments of the present invention, the formation of pinholes in the plating layer are able to be reduced or prevented with the base layer not fully covering the corners of the ceramic body.
The above and other elements, features, steps, characteristics and advantages of the present invention will become more apparent from the following detailed description of the example embodiments with reference to the attached drawings
Example embodiments of the present invention will be described in detail below with reference to the drawings.
An electronic component according to an example embodiment of the present invention includes a ceramic body and an external electrode provided on a surface of the ceramic body. The external electrode includes a base layer covering the surface of the ceramic body, and a plating layer covering the base layer. Two adjacent side surfaces and an end surface of the ceramic body are in contact with each other to define a corner of the ceramic body. The base layer of the external electrode covers the end surface and a plurality of side surfaces including the two side surfaces of the ceramic body except for the corner of the ceramic body. A portion of the corner or the entire corner of the ceramic body may be exposed from the base layer.
When the plating layer is provided on a surface of the base layer, the plating layer is only barely provided on the surface of the corner of the ceramic body, which causes generation of pinholes in the plating layer. In addition, since the bonding force between the corner of the ceramic body and the plating layer is low, a gap is likely to be generated between them. When there is a defect (pinholes, gaps, etc.) in the plating layer, a plating solution may infiltrate into the plating layer from the defect. Since the infiltrated plating solution may damage the ceramic body, the reliability of the electronic component may deteriorate.
In the electronic component according to the present example embodiment of the present invention, the thickness of the plating layer covering the corner of the ceramic body is larger than the thickness of the plating layer covering the center of the end surface, thus reducing or preventing the occurrence of defects in the plating layer.
As long as the electronic component includes a ceramic body and an external electrode provided on a surface of the ceramic body, the shape, dimensions, and material of the ceramic body, and the number, arrangement, shape, and the like of the external electrode are not particularly limited. An internal electrode may be embedded in the ceramic body, but it does not have to be embedded in the ceramic body. When the internal electrode is present, the internal electrode is electrically connected to the external electrode in an appropriate manner.
Examples of the electronic component to which the configuration of the present example embodiment of the present invention can be applied include a surface mounting type electronic component, in particular, a chip component, and more specifically, a capacitor such as a multilayer ceramic capacitor, a positive characteristic (or positive temperature coefficient, PTC) thermistor, and a negative characteristic (or negative temperature coefficient, NTC) thermistor, varistor, and capacitor.
In the following example embodiment, a multilayer ceramic capacitor including an internal electrode will be exemplified and described in detail with reference to the drawings.
The electronic component 10 illustrated in
The ceramic body 20 of the multilayer ceramic capacitor includes a plurality of ceramic layers 200 (see
Each configuration will be described in detail below.
As illustrated in
Two adjacent side surfaces 23 and one of the end surfaces (end surface 21 in
The “corner 25 of the ceramic body 20” in the present specification is a region including a vertex 25t where the two side surfaces 23 intersect with an end surface, and a portion surrounding the vertex 25t, and the corner has a certain extent (see
The corner 25 may be, for example, a range surrounded by an arc drawn with a radius r on the side surface 23 and the end surface 21 around the vertex 25t. The dimension (radius r) of the corner 25 can be appropriately set according to the dimension of the electronic component 10. For example, in the case of the electronic component 10 of 0603 size, the dimension (radius r) of the corner 25 can be set to about ⅕ (that is, about W/5) of the width W of the electronic component 10.
As described later, the corner 25 (more precisely, a ridge 25RL of the corner 25) is covered with a first plating region 321 of the plating layer 32. Thus, a range surrounded by an arc in which a length 321R (
As illustrated in
The corner 25 of the ceramic body 20 may be fully exposed from the base layer 31 (that is, the corner 25 does not have to be covered with the base layer 31 at all). Alternatively, only a portion of the corner 25 may be exposed from the base layer 31, and the remaining portion may be covered with the base layer 31. As an example, since the base layer 31 covering the corner 25 is extremely thin, the base layer 31 does not have to form a continuous film (that is, a plurality of holes may be formed in the base layer 31, and a portion of the corner 25 may be exposed from the holes). In another example, there may be a case where only the vicinity of the vertex 25t (
The thickness of the base layer 31 does not have to be uniform. For example, the base layer 31 covering the corner 25 of the ceramic body 20 or the vicinity thereof may be relatively thin, and the base layer 31 covering the other portion may be relatively thick.
The base layer 31 is provided to form the plating layer 32 by, for example, electrolytic plating. Thus, it is preferable that the thickness of the base layer 31 is a thickness sufficient for performing electrolytic plating and is as thin as possible. Specifically, a thickness 31t of the base layer 31 is, for example, preferably about 0.1 μm or more and about 10 μm or less. Thinning the base layer 31 makes it possible to reduce the thickness (total thickness of the base layer 31, the plating layer 32, and the second plating layer 33) of the external electrode 30.
In the present specification, the “thickness 31t of the base layer 31” refers to the maximum thickness of the base layer 31. The thickness 31t of the base layer 31 generally coincides with the thickness of the plating layer covering a center 21c of the end surfaces 22 and 21 of the ceramic body 20.
The plating layer 32 of the external electrode 30 covers the base layer 31 and a portion of the corner 25 of the ceramic body 20 exposed from the base layer 31.
The plating layer 32 includes three regions of a plating layer (first plating region) 321 covering the corner 25 of the ceramic body 20, a plating layer (second plating region) 322 provided on the end surfaces 21 and 22 side of the ceramic body 20, and a plating layer (third plating region) 323 provided on the side surface 23 side of the ceramic body 20.
As illustrated in
Forming the plating layer 32 to be locally thick in the first plating region 321 covering the corner 25 makes it possible to reduce or prevent the occurrence of defects (pinholes in the plating layer 32, gaps between the plating layer 32 and the ceramic body 20, etc.) in the first plating region 321. As a result, when the plating layer 32 is formed, it is possible to reduce or prevent infiltration of a plating solution from the defects in the plating layer 32 and a damage to the ceramic body 20 and the internal electrodes 71 and 72.
The thickness T1 of the first plating region 321 and the thickness T2 of the plating region 32 covering the center 21c of the end surface 21 of the ceramic body 20 are measured as follows.
First, the electronic component 10 is cut along a section CS parallel to the LT plane (section taken along the line X-X in
Here, the ridge 25RL will be described with reference to
See
Strictly speaking, the thickness T2 of the plating layer 32 covering the center 21c of the end surface 21 of the ceramic body 20 needs to be measured in a section of the electronic component 10 cut along a plane passing through the center 21c of the end surface 21. However, the second plating region 322 illustrated in
The thickness T1 of the first plating region 321 covering the corner 25 is, for example, preferably about 1.5 times or more the thickness (that is, the thickness of the second plating region 322) T2 of the plating layer 32 covering the center 21c of the end surface 21. This configuration sufficiently increases the thickness T1 of the first plating layer 321 covering the corner 25 and further improves the reducing or preventing effect of reducing or preventing infiltration of the plating solution into the plating layer 32.
More preferably, the thickness T1 of the first plating region 321 is, for example, about twice or more the thickness T2 of the second plating region 322, and still more preferably 3 times or more and 6 times or less.
As illustrated in
The multilayer film is preferably formed by stacking 2 or more and 10 or less plating films, and more preferably formed by stacking 2 or more and 4 or less plating films.
The number of layers of the plating film defining the first plating region 321 (multilayer film) is calculated as (the number of cracks CL)+1. In
The crack CL can be confirmed by observing a section of the first plating region 321 with a microscope (microscope or optical microscope) (
The length 321R of the first plating region 321 is measured as follows.
In
The ceramic body 20 has the ridge 20RL3 where two adjacent side surfaces 23 are in contact with each other (see
The length 321R of the first plating region 321 along the ridge 20RL1 of the ceramic body 20 is equal or substantially equal to the length of the first plating region 321 measured along each of the other ridges 20RL2 and 20RL3. Thus, when the length of the first plating region 321 is measured, the length may be measured along any ridge.
As can be seen from
In the electronic component 10 according to the present example embodiment, the base layers 31 and 41 can be thinned without generating defects (pinholes, gaps, etc.) in the plating layers 32 and 42. Thus, for the following reasons, the electronic component is particularly suitable for the electronic component 10 including the internal electrodes 71 and 72 inside the ceramic body 20, such as the multilayer ceramic capacitor illustrated in
In the multilayer ceramic capacitor, the thicknesses of the external electrodes 30 and 40 can be reduced by thinning the base layers 31 and 41. Thus, the number of the internal electrodes 71 and 72 can be increased without changing the external dimensions of the electronic component 10. This makes it possible to improve the capacitance of the multilayer ceramic capacitor.
In other electronic components (multilayer thermistors and the like) including internal electrodes, since the number of internal electrodes can be increased, the electrical characteristics of the electronic components can be improved.
An example of a method for manufacturing the electronic component 10 according to the present example embodiment will be described by taking a multilayer ceramic capacitor having the structure illustrated in
First, the ceramic body 20 including the internal electrodes 71 and 72 is prepared. Ceramic body 20 can be prepared by any suitable method.
The ceramic body 20 (more specifically, the ceramic layers 200) is formed of a ceramic material suitable for the electronic component to be manufactured. For example, in a multilayer ceramic capacitor, the ceramic body 20 is formed of a dielectric ceramic material (for example, BaTiO3, CaTio3, SrTiO3, CaZro3, (BaSr)TiO3, Ba(ZrTi)O3, (BiZn)Nb2O7, and the like).
The internal electrodes 71 and 72 are formed of a conductive material. Examples of suitable conductive materials include Ag, Cu, Pt, Ni, Al, Pd, and Au. Ag, Cu, and Ni are particularly preferable.
In the preparation of the ceramic body 20 and the internal electrodes 71 and 72, first, each raw material of the ceramic body 20 is weighed, put in a ball mill together with a pulverization medium (hereinafter, also referred to as PSZ ball) such as partially stabilized zirconia (PSZ) and pure water, and subjected to wet mixing and pulverizing. The obtained mixture is calcined at a predetermined temperature (e.g., about 1000° C. to about 1200° C.) to provide a calcined powder. An organic binder is added to the obtained calcined powder, and the resulting material is subjected to a wet mixing treatment to form a slurry, and then subjected to molding processing using a doctor blade method or the like to prepare a ceramic green sheet having a desired thickness.
Next, a conductive paste used to form the internal electrodes 71 and 72 is applied to a surface of the ceramic green sheet to form an internal electrode pattern. The conductive paste is prepared, for example, by dispersing metal powder and an organic binder in an organic solvent. The conductive paste is applied by, for example, screen printing or the like.
A predetermined number of the ceramic green sheets on which the internal electrode patterns are formed are laminated, then the laminate was sandwiched by ceramic green sheets on which the internal electrode patterns are not formed from upper and lower sides and subjected to pressure bonding. A laminate (laminate before sintering) in which the ceramic green sheets and the internal electrode patterns are alternately laminated is thus obtained. The laminate before sintering is cut into a predetermined size, then subjected to a degreasing treatment and a debinding treatment, and fired at a predetermined temperature (e.g., about 1200° C. to about 1400° C.) and in a predetermined atmosphere. The laminate 80 having a multilayer structure in which a plurality of ceramic layers 200 and internal electrodes 71 and 72 are alternately stacked is thus obtained. The laminate 80 can also be regarded as the ceramic body 20 incorporating the internal electrodes 71 and 72.
As illustrated in
The base layers 31 and 41 are formed of a metal material including Cu, Ag, Si, Ni, or the like, for example. In particular, it is preferable to form the base layers from a Cu film, for example.
The base layers 31 and 41 can be formed by a known film forming method. For example, a sputtering method, a vapor deposition method, a coating method (conductive paste is applied to a predetermined position and then baked), a dipping method, or the like can be used. For example, the Cu film is preferably formed by applying a Cu paste and then baking the paste.
By forming the Cu film thin, at least a portion of the corner 25 of the ceramic body 20 is exposed from the base layers 31 and 41.
The plating layers 32 and 42 are formed in such a manner as to cover the base layers 31 and 41 and a portion of the corner 25 of the ceramic body 20 exposed from the base layer 31.
The plating layers 32 and 42 can be formed, for example, by performing electrolytic plating of at least one of Ni and Cu. For the plating layers 32 and 42, for example, a plating method capable of applying an impact to an object to be plated is used, such as a barrel plating method in which a conductive medium placed in a barrel and the ceramic body 20 are plated while being rotated and stirred, or a centrifugal plating method in which the ceramic body 20 is stirred and plated by a centrifugal force of a barrel. The plating layer 32 (first plating region 321) covering the corner 25 of the ceramic body 20 can be thus formed into a thick film.
Hereinafter, a mechanism used to thicken the first plating region 321 will be described in detail with reference to the drawings, taking a case where plating is performed by a centrifugal plating method as an example.
As illustrated in
The plating layer 32a is first formed on the surfaces of the base layers 31 and 41, and expands to the surface of the corner 25 of the ceramic body 20 with time (
The plating layer 32a covering the corner 25 of the ceramic body 20 has a weak bonding force with the surface of the corner 25. The plating layer 32a is easily peeled off from the surface of the corner 25 because of the collision occurring between the ceramic bodies 20, between the ceramic body 20 and the conductive medium, and between the ceramic body 20 and the cathode during centrifugal plating, and because of friction generated when the ceramic body 20 is stuck to the cathode with centrifugal force (
In a state where a portion of the plating layer 32a is peeled off, plating is further continued. With the base layers 31 and 41 and/or the previously formed plating layer 32a as a starting point, the plating layer 32b covering the surface of the corner 25 is formed again (
As in
When plating is further continued in a state where the plating layer 32b is peeled off, the plating layer 32c covering the surface of the corner 25 is formed again with the base layers 31 and 41 and/or the previously formed plating layers 32a and 32b as a starting point (
By repeating formation and peeling of the plating layer covering the corner 25 like this, the plating layer 32 (first plating region 321) covering the corner 25 can be made thicker than the other portions of the plating layer 32 (second plating region 322, third plating region 323).
The thickness T1 of the first plating region 321 can be adjusted by the length of the plating time. Increasing the plating time makes it possible to increase the thickness T1 of the first plating region 321.
The number of layers of the plating films 321a, 321b, and 321c forming the first plating region 321 is determined by the number of times of peeling. The number of layers of the plating films 321a, 321b, and 321c can be controlled by controlling the number of times of peeling by adjusting the strength of the impact to be applied to the ceramic body 20 (more precisely, a plating film formed on the surface of the ceramic body 20) during centrifugal plating (for example, it can be adjusted by the rotation speed of the container (barrel) containing chips and a medium) and adjusting the plating time.
For example, the plating time is preferably in the range of about 30 minutes to about 600 minutes, and the rotation speed is preferably in the range of about 200 rpm to about 500 rpm.
The second plating layers 33 and 43 are formed in such a manner as to cover the surfaces of the plating layers 32 and 42. The second plating layers 33 and 43 can be formed by, for example, performing electrolytic plating of Sn. The second plating layers 33 and 43 can be formed by a known plating method, and for example, a barrel plating method, a centrifugal plating method, or the like can be used.
A measurement sample was prepared by the following procedure.
The ceramic body 20 was prepared by pulverizing and mixing of raw materials, calcining, molding, firing, and cutting. For the pulverization and mixing of the raw materials, BaTiO3 as a main component was mixed in a predetermined amount then pulverized, and calcined at a maximum temperature of about 1200° C. in an air atmosphere. An organic binder was added to the obtained calcined powder and subjected to wet mixing, whereby a slurry was obtained. A ceramic green sheet having a desired thickness was prepared from the slurry by a doctor blade method. Next, a conductive paste (Ag paste) for the internal electrode was applied to a surface of the ceramic green sheet to form an internal electrode pattern. A predetermined number of the ceramic green sheets on which the internal electrode pattern was thus formed were laminated, then the obtained material was sandwiched by ceramic green sheets on which the internal electrode pattern was not formed from upper and lower sides and subjected to pressure bonding, whereby a laminate was prepared. This laminate was cut into a predetermined size, then subjected to a degreasing treatment and a debinding treatment, and then fired at a predetermined temperature (about 1200° C. to about 1400° C.) in a predetermined atmosphere, such that the laminate 80 having a multilayer structure including the ceramic body 20 and internal electrodes 71 and 72 was obtained.
The base layer 31 was formed by applying a Cu paste to an end of the ceramic body 20 and baking the paste. At this time, the corner 25 of the ceramic body 20 was exposed from the base layer 31 (
Subsequently, the plating layer 32 (Ni plating layer) covering the surface of the base layer 31 and the corner 25 of the ceramic body 20 was formed by centrifugal plating. At the time of centrifugal plating, the rotation speed of the barrel (container containing chips and a medium) was increased and the plating time was increased as compared with typical centrifugal plating conditions. Multilayering of the Ni plating layer was thus performed at the corner 25 of the ceramic body 20 which is susceptible to impact.
Further, the second plating layer 33 (Sn plating layer) covering the Ni plating layer was formed by centrifugal plating. The plating conditions were typical plating conditions.
A multilayer ceramic capacitor was thus obtained (sample of Example 1).
The sample was embedded in a resin, and polished to the X-X line in
The length 321R of the first plating region 321 (
A sample of Comparative Example 1 was prepared by the same steps as in Example 1 except for the conditions for forming the plating layer 32 (Ni plating layer). In the sample of Comparative Example 1, the Ni plating layer 32 was plated under typical centrifugal plating conditions. As a result, the impact applied to the corner 25 of the ceramic body 20 was reduced, and the multilayering of the Ni plating layer 32 was reduced or prevented.
The second plating layer (Sn plating) was peeled off from the sample of Comparative Example 1, then the sample was processed in the same manner as in the sample of Example 1, and the corner portion of the external electrode 30 was observed with a microscope (Keyence: VHX7000).
In addition, 10,000 samples were prepared for each of the sample of Example 1 and the sample of Comparative Example 1, and the following evaluations were performed.
As shown in Table 1, in Comparative Example 1, infiltration of plating solution was confirmed in 521 samples out of 10,000 samples. On the other hand, in Example 1, infiltration of plating solution was not confirmed in the 10,000 samples.
For the reliability evaluation, in Comparative Example 1, 26 samples out of 10,000 samples were defective. In Example 1, there was no defective product in the 10,000 samples.
While example embodiments of the present invention have been described above, it is to be understood that variations and modifications will be apparent to those skilled in the art without departing from the scope and spirit of the present invention. The scope of the present invention, therefore, is to be determined solely by the following claims.
Number | Date | Country | Kind |
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2022-037424 | Mar 2022 | JP | national |
This application is a Continuation application of PCT Application No. PCT/JP2023/006550, filed on Feb. 22, 2023, and claims the benefit of priority to Japanese Patent Application No. 2022-037424, filed on Mar. 10, 2022. The entire contents of each application are hereby incorporated herein by reference.
Number | Date | Country | |
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Parent | PCT/JP2023/006550 | Feb 2023 | WO |
Child | 18828159 | US |