Claims
- 1. An electronic device, comprising:
an active region located over a substrate; an undoped layer located over the active region; and a doped upper cladding layer located over the undoped layer, wherein a diffusion barrier region including aluminum is located between the undoped layer and the doped upper cladding layer.
- 2. The electronic device as recited in claim 1 wherein the diffusion barrier region is a diffusion barrier layer or a number of diffusion barrier layers located between a plurality of the undoped layers.
- 3. The electronic device as recited in claim 2 wherein the number of diffusion barrier layers ranges from about 1 to about 8 layers and each of the number of diffusion barrier layers has a thickness of about 1 nm.
- 4. The electronic device as recited in claim 1 wherein the diffusion barrier region includes an diffusion barrier layer consisting of aluminum arsenide, aluminum phosphide, indium aluminum arsenide, indium aluminum arsenide phosphide, or indium aluminum gallium arsenide.
- 5. The electronic device as recited in claim 4 wherein the diffusion barrier layer comprises between about 5 and about 50 percent aluminum.
- 6. The electronic device as recited in claim 1 wherein the diffusion barrier region has a thickness of about 1 nm and the undoped layer has a thickness of about 10 nm.
- 7. The electronic device as recited in claim 1 wherein the diffusion barrier region does not form a p-n junction with the doped upper cladding layer.
- 8. The electronic device as recited in claim 1 wherein the doped upper cladding layer is doped with zinc and the diffusion barrier region inhibits the diffusion of zinc into the active region.
- 9. A method of manufacturing an electronic device, including:
forming an active region over a substrate; forming an undoped layer over the active region; and forming a doped upper cladding layer over the undoped layer, wherein a diffusion barrier region including aluminum is formed between the undoped layer and the doped upper cladding layer.
- 10. The method as recited in claim 9 wherein the diffusion barrier region is a diffusion barrier layer or a number of diffusion barrier layers located between a plurality of the undoped layers.
- 11. The method as recited in claim 10 wherein the number of diffusion barrier layers ranges from about 1 to about 8 layers and each of the number of diffusion barrier layers has a thickness of about 1 nm.
- 12. The method as recited in claim 9 wherein the diffusion barrier region includes an aluminum diffusion barrier layer consisting of aluminum arsenide, aluminum phosphide, indium aluminum arsenide, indium aluminum arsenide phosphide, or indium aluminum gallium arsenide.
- 13. The method as recited in claim 12 wherein the diffusion barrier layer comprises between about 5 and about 50 percent aluminum.
- 14. The method as recited in claim 9 wherein the diffusion barrier region has a thickness of about 1 nm and the undoped layer has a thickness of about 10 nm.
- 15. The method as recited in claim 9 wherein the diffusion barrier region does not form a p-n junction with the doped upper cladding layer.
- 16. The method as recited in claim 9 wherein forming a doped upper cladding layer includes forming a zinc doped upper cladding layer, wherein the diffusion barrier region inhibits the diffusion of zinc from the upper cladding layer into the active region.
- 17. An optical fiber communications system, comprising:
an optical fiber; a transmitter and a receiver connected by the optical fiber; and an electronic device, including:
an active region located over a substrate; an undoped layer located over the active region; and a doped upper cladding layer located over the undoped layer, wherein a diffusion barrier region including aluminum is located between the undoped layer and the doped upper cladding layer.
- 18. The optical fiber communication system recited in claim 17 wherein the diffusion barrier region is a diffusion barrier layer or a number of diffusion barrier layers located between a plurality of the undoped layers.
- 19. The optical fiber communication system recited in claim 17 wherein the transmitter or the receiver includes the electronic device.
- 20. The optical fiber communication system recited in claim 17 further including a source or a repeater.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. patent application Ser. No. 09/757,099, entitled “ELECTRONIC DEVICE HAVING A BARRIER REGION INCLUDING ALUMINUM AND A METHOD OF MANUFACTURE THEREFOR”, filed on Jan. 8, 2001. The above-listed application is commonly assigned with the present invention and is incorporated herein by reference as if reproduced herein in its entirety.
Continuations (1)
|
Number |
Date |
Country |
Parent |
09757099 |
Jan 2001 |
US |
Child |
10611483 |
Jul 2003 |
US |