An electrostatic chuck holds and supports a substrate during a manufacturing process and also removes heat from the substrate without mechanically clamping the substrate. During use of an electrostatic chuck, the back side of a substrate, such as a semiconductor wafer, is held to the face of the electrostatic chuck by an electrostatic force. The substrate is separated from one or more electrodes in the face of the electrostatic chuck by a surface layer of material that covers the electrode. In a Coulombic chuck, the surface layer is electrically insulating, while in a Johnsen-Rahbek electrostatic chuck, the surface layer is weakly conducting. The surface layer of the electrostatic chuck may be flat or may have one or more protrusions, projections or other surface features that further separate the back side of the substrate from the covered electrode. Heat delivered to the substrate during processing can be transferred away from the substrate and to the electrostatic chuck by contact heat conduction with the protrusions and/or by gas heat conduction with a cooling gas. Contact heat conduction is generally more efficient than gas heat conduction in removing heat from the substrate. However, controlling the amount of contact between the substrate and the protrusions can be difficult.
In microelectronics production, as semiconductor and memory device geometries become progressively smaller and the sizes of wafers, flat screen displays, reticles and other processed substrates become progressively larger, the allowable particulate contamination process specifications become more restrictive. The effect of particles on electrostatic chucks is of particular concern because the wafers physically contact or mount to the chuck clamping surface. If the mounting surface of the electrostatic chuck allows any particulate to become entrapped between the mounting surface and the substrate, the substrate may be deformed by the entrapped particle. For example, if the back side of a wafer is clamped electrostatically against a flat reference surface, the entrapped particle could cause a deformation of the front side of the wafer, which will therefore not lie in a flat plane. According to U.S. Pat. No. 6,835,415, studies have shown that a 10-micron particle on a flat electrostatic chuck can displace the surface of a reticle (i.e., a test wafer) for a radial distance of one inch or more. The actual height and diameter of the particle-induced displacement is dependent on numerous parameters such as the particle size, the particle hardness, the clamping force and the reticle thickness.
During substrate processing it is important to be able to control the temperature of the substrate, limit the maximum temperature rise of the substrate, maintain temperature uniformity over the substrate surface, or any combination of these. If there are excessive temperature variations across the substrate surface due to poor and/or non-uniform heat transfer, the substrate can become distorted and process chemistry can be affected. The greater the area of direct contact with the electrostatic chuck, the greater the heat transferred by contact heat conduction. The size of the area of direct contact is a function of the roughness, flatness and hardness of the contact surfaces of the substrate and electrostatic chuck, as well as of the applied pressure between the contact surfaces. Since the characteristics of the contact surface vary from substrate to substrate, and since the characteristics of the contact surface can change over time, accurately controlling contact heat conductance between the electrostatic chuck and substrate is difficult.
Controlling the temperature of a substrate and the number of particles on its back side is important for reducing or eliminating damage to microelectronic devices, reticle masks and other such structures, and for reducing or minimizing manufacturing yield loss. The abrasive properties of the electrostatic chuck protrusions, the high contact area of roughened protrusions, and the effect of lapping and polishing operations during manufacture of electrostatic chucks may all contribute adder particles to the back side of substrates during use with an electrostatic chuck.
In accordance with an embodiment of the invention, there is provided a soft protrusion structure for an electrostatic chuck, which offers a non-abrasive contact surface for wafers, workpieces or other substrates, while also having improved manufacturability and compatibility with grounded surface platen designs. The soft protrusion structure comprises a photo-patternable polymer.
In one embodiment according to the invention, there is provided an electrostatic chuck comprising a surface layer activated by a voltage in an electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck. The surface layer includes a plurality of protrusions comprising a photo-patternable polymer and a charge control layer to which the plurality of polymer protrusions adhere. The plurality of polymer protrusions extend to a height above portions of the charge control layer surrounding the plurality of polymer protrusions to support the substrate upon the plurality of polymer protrusions during electrostatic clamping of the substrate.
In further, related embodiments, the photo-patternable polymer may comprise a photo-patternable polymer that is liquid at room temperature prior to baking, or may comprise a photo-patternable polymer that is solid at room temperature prior to baking. The photo-patternable polymer may comprise an epoxy based, polyimide based or benzocyclobutene based photo-patternable polymer. The charge control layer may comprise silicon carbide or diamond like carbon. The charge control layer may comprise a surface resistivity of between about 108 ohms per square to about 1011 ohms per square. The polymer protrusions may comprise a height of between about 3 microns and about 12 microns; and may comprise a diameter of about 900 microns. The electrostatic chuck may further comprise a gas seal ring comprising a photo-patternable polymer, such as an epoxy based, benzocyclobutene based or polyimide based photo-patternable polymer. The plurality of polymer protrusions may comprise a surface roughness of between about 0.02 μm and about 0.05 μm. The photo-patternable polymer may comprise a material having a tensile strength of greater than about 70 megapascals (MPa), and may comprise a material having a Young's modulus of less than about 3.5 gigapascals (GPa). The electrostatic chuck may comprise a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground. The conductive path may comprise diamond-like carbon.
In another embodiment according to the invention, there is provided an electrostatic chuck comprising a surface layer activated by a voltage in an electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck. The surface layer includes a plurality of protrusions comprising a conductive polymer and a charge control layer to which the plurality of polymer protrusions adhere. The plurality of polymer protrusions extend to a height above portions of the charge control layer surrounding the plurality of polymer protrusions to support the substrate upon the plurality of polymer protrusions during electrostatic clamping of the substrate.
In further, related embodiments, the conductive polymer may comprise a polymer from the group consisting of: a blend of a carbon nanotube and a polymer; and a conductive nanoparticle doped polymer.
In another embodiment according to the invention, there is provided a method of manufacturing an electrostatic chuck. The method comprises exposing a photo-patternable polymer, on a surface of the electrostatic chuck, to light through a mask, the electrostatic chuck comprising a charge control layer underlying at least a portion of the photo-patternable polymer; and removing areas of the surface of the electrostatic chuck based on a pattern of exposure of the surface to the light through the mask, thereby forming a plurality of polymer protrusions on the surface of the electrostatic chuck. The plurality of polymer protrusions adhere to the charge control layer and extend to a height above portions of the charge control layer surrounding the plurality of polymer protrusions.
In further related embodiments, the method may comprise laminating a polymer sheet including the photo-patternable polymer over at least a portion of the charge control layer, or spraying a liquid polymer including the photo-patternable polymer over at least a portion of the charge control layer. The photo-patternable polymer may comprise a material having a tensile strength of greater than about 70 megapascals (MPa) and having a Young's modulus of less than about 3.5 gigapascals (GPa). The method may further comprise covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck with a conductive path, the conductive path comprising at least a portion of an electrical path to ground.
The foregoing will be apparent from the following more particular description of example embodiments of the invention, as illustrated in the accompanying drawings in which like reference characters refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating embodiments of the present invention.
A description of example embodiments of the invention follows.
In accordance with an embodiment of the invention, there is provided an electrostatic chuck that includes protrusions on its surface for mounting a substrate. The protrusions are formed of a polymer substance, such as polyetherimide (PEI), polyimide or polyether ether ketone (PEEK). Further, the electrostatic chuck features a charge control surface layer, to which the polymer protrusions adhere. The charge control surface layer may be formed of the same polymer substance as the protrusions, such as polyetherimide (PEI), polyimide or polyether ether ketone (PEEK). Such protrusions and charge control surface layer may assist with encouraging contact of the electrostatic chuck with the substrate to promote contact cooling, while also reducing production of undesirable particles.
In another embodiment according to the invention, a photo-patternable polymer may be used to form protrusions and gas seals on an electrostatic chuck, as discussed further below.
In accordance with an embodiment of the invention, the polyetherimide (PEI) used for the protrusions 201, charge control layer 202 or other components of the electrostatic chuck may be formed of unfilled amorphous polyether imide (PEI), in a thickness of between about 12 microns and about 25 microns. For example, PEI sold under the tradename ULTEM 1000 may be used, sold by Sabic Innovative Plastics Holdings BV. Where the protrusions 201 and/or charge control layer 202 or other components are formed of polyether ether ketone (PEEK), they may be made from unfilled PEEK, in a thickness of between about 12 microns and about 25 microns. For example, PEEK sold under the trade name Victrex® APTIV PEEK™ FILM, 2000-006 (unfilled amorphous grade) may be used, sold by Victrex U.S.A., Inc. of West Conshohocken, Pa., U.S.A.
An electrostatic chuck featuring polymer protrusions and a polymer charge control layer in accordance with an embodiment of the invention may include features of the electrostatic chuck of U.S. patent application Ser. No. 12/454,336, filed on May 15, 2009, published as U.S. Patent Application Publication No. 2009/0284894, the teachings of which are hereby incorporated by reference in their entirety. In particular, features relating to equally spaced protrusions, trigonal pattern protrusions and low particle production may be included, and other features may also be included.
In one example, the electrostatic chuck may be a 300 mm configuration, including an aluminum base, an alumina insulator 209 of about 0.120 inches in thickness, an alumina dielectric 205 of about 0.004 inches thickness, and having a rotary platen design to allow rotating and tilting of the substrate that is mounted to the electrostatic chuck. The diameter of the electrostatic chuck may, for example, be 300 mm, 200 mm or 450 mm. The protrusions 314 may be in a trigonal pattern, with a center to center spacing dimension 316 of from about 6 mm to about 8 mm, for example. The diameter 315 of the protrusions may, for example, be about 900 microns. The height of the protrusions 314 may, for example, be from about 3 microns to about 12 microns, such as about 6 microns. The protrusions 314 may be formed entirely of polymer, as may be the charge control layer 202 (see
In accordance with an embodiment of the invention, an electrostatic chuck may be made by the process of, first, preparing the ceramic assembly using a ceramic to ceramic bond. For example, the dielectric layer 205 may be bonded to the insulator layer 209 using the bonding substances described above in connection with the embodiment of
In accordance with an embodiment of the invention, the gas seal rings of the electrostatic chuck may comprise a surface roughness of less than about 8 microinches, or less than about 4 microinches, or less than about 2 microinches, or less than about 1 microinches.
In another embodiment according to the invention, a photo-patternable polymer may be used to form protrusions and gas seals on an electrostatic chuck. As used herein, a “photo-patternable polymer” is a polymer whose surface may be patterned based on the results of a photochemical reaction.
In accordance with an embodiment of the invention, where a photo-patternable polymer is used, the thickness of the protrusions determines the clamping force of the electrostatic chuck. Thus, in order to control the clamping force, the thickness of the protrusion can be controlled. For example, the thickness of the protrusion can be controlled by the thickness of the polymer sheet in a lamination process, and by the volume of polymer sprayed in a spray coating process. In addition, when a lamination process is used, the thickness can be changed by treating the protrusion with a reactive ion etch (RIE) process, for example to reduce the thickness of the protrusion. This may also result in the edges of the protrusion being smoother and cleaner.
Further, in accordance with an embodiment of the invention, the hard bake parameters for a photo-patternable polymer can be adjusted according to the application in which the electrostatic chuck is used, and the resulting desired polymer properties. For example, if particles are produced by abrasion of a substrate, which may be discovered in a clamping/declamping cycle test, it may be desirable to make the protrusions softer by decreasing the hard bake temperature and time. On the other hand, if particles from the polymer protrusions are discovered, for example in a clamping/declamping cycle test, it may be desirable to make the protrusions harder by increasing the hard bake temperature and time.
In accordance with an embodiment of the invention, use of a photo-patternable polymer can provide several advantages. It can produce a uniform thickness of protrusions; and can produce non-abrasive and soft protrusions, with Young's modulus and hardness significantly lower than ceramic protrusions (such as diamond like carbon and silicon carbide protrusions). Use of a photo-patternable polymer can improve manufacturability and require less capital equipment, can reduce particulate contamination, can provide better compatibility with grounded surface platen designs, can provide lower cost and higher throughput electrostatic chucks, and can be easier to scale up to larger size electrostatic chucks (such as 450 mm). In addition, photo-patternable polymer protrusions may have better adhesion than other protrusions, and can be used without an adhesion promoter. Further, an electrostatic chuck using photo-patternable polymer protrusions may be more easily refurbished than previous designs. For example, if a protrusion wears off, an oxygen plasma washer can be used to clean the surface, after which the protrusion may be reformed as described herein without disassembling the chuck.
Experimental: Manufacturing Using Photo-Patternable Polymer
I. Lamination Process for the Embodiment of
In accordance with an embodiment of the invention, an electrostatic chuck may be made by the process of, first, preparing the ceramic assembly using a ceramic to ceramic bond 810. For example, the dielectric layer 805 may be bonded to the insulator layer 809 using the bonding substances described above in connection with the embodiment of
Next, the front side of the ceramic assembly is coated by the charge control layer 802 using Chemical Vapor Deposition (CVD), such as by depositing silicon carbide, diamond like carbon and/or a substance taught elsewhere herein for use as a charge control layer, with the layer 802 being electrically connected with grounded layer 851 via the edge of the ceramic assembly.
Next, the polymer protrusions 801 and gas seal rings 819 are made by photolithography. The photo-patternable polymer sheet is laminated onto the charge control layer 802 by using CATENA (sold by GBC Films Group, Addison, Ill., U.S.A.) with a 0.5 m/min roll speed and a 410-480 kPa pressure at 80 C, and then is baked at 100 C for 5 min. After that, the polymer is exposed to light of an intensity of 300 mJ/cm2. The photo-patternable polymer is baked at 95 C for 5 min and then developed in Propylene Glycol Monomethyl Ether Acetate (PGMEA) for 5 min, followed by Isopropyl Alcohol (IPA) rinsing for 2 min. At the end, the polymer is baked at 180 C for 30 min. In addition, when a lamination process is used, the thickness can be changed by treating the protrusion with a reactive ion etch (RIE) process, for example to reduce the thickness of the protrusion. This may also result in the edges of the protrusion being smoother and cleaner. The thickness of the protrusion is between about 3 microns and about 12 microns, for example about 6 microns. The amount etched away (resulting in the height of the protrusions) may be optimized for the back side gas pressure that will be used with the electrostatic chuck. The height of the protrusions is preferably approximately the same as, or substantially equal to, the mean free path of the gas used in back side cooling.
2. Lamination Process for the Embodiment of
A process is used similar to that described above for producing the embodiment of
3. Spray Coating Process for the Embodiment of
A similar process is used to that described above for lamination, except that a different technique is used to apply the photo-patternable polymer for the protrusions 801 and gas seal ring 819 onto the charge control layer 802.
The polymer protrusions 801 and gas seal ring 819 are made by a photolithography technique. The photo-patternable polymer is sprayed onto the charge control layer 802 using a Prism 300 (sold by Ultrasonic Systems, Inc., Haverhill, Mass., U.S.A.) with a 100 mm/sec spray speed, 2 ml/min flow rate, 30 psi air pressure and 30 mm height (distance between spray head and the surface of the charge control layer 802), and then is baked at 95 C for 15 min. The ceramic assembly is heated up to 65 C during the spray coating process. After that, the polymer is exposed to light of an intensity of 300 mJ/cm2. The photo-patternable polymer is baked at 95 C for 5 min and then developed in Propylene Glycol Monomethyl Ether Acetate (PGMEA) for 5 min, followed by Isopropyl Alcohol (IPA) rinsing for 2 min. At the end, the polymer is baked at 180 C for 30 min. The thickness of the protrusion is between about 3 microns and about 12 microns, for example about 6 microns. The thickness of the protrusions is controlled by the amount of polymer sprayed onto the surface of the charge control layer 802. The thickness of protrusions may be optimized for the back side gas pressure that will be used with the electrostatic chuck. The height of the protrusions is preferably approximately the same as, or substantially equal to, the mean free path of the gas used in back side cooling.
4. Spray Coating Process for the Embodiment of
A process is used similar to that described above for producing the embodiment of
Experimental: Test Results
In accordance with an embodiment of the invention a variety of tests were performed on an electrostatic chuck having photo-patternable polymer protrusions described herein. Results were as follows.
1) Scratch test: a needle was used to scratch through a protrusion. The protrusion passed the test; the blade cut through the protrusion without causing delamination.
2) Tape test: a Kapton tape was placed on top of the protrusions, and was then peeled off. The protrusions passed the test; no protrusions peeled off.
3) IPA Wipe test: clean room paper with Isopropyl Alcohol (IPA) was used to wipe the embossments. The protrusions passed the test.
4) Loading/unloading cycle test: a weight was loaded and unloaded onto the top of the protrusions several times. The protrusions passed the test.
5) Glass rubbing test: 15 μm PerMx™ protrusions on a silicon carbide surface were used. Normal stress was manually applied onto the protrusions using glass, while the glass was rubbed against the protrusions. The results were that the thickness of the protrusions did not change. Scratches were found on the top surface of the embossments.
6) Torture tests: Torture tests were performed using a ceramic assembly with 14 μm thick protrusions. In a solvent test, the protrusions were immersed in IPA and acetone for a day respectively. In a UV exposure test, the protrusions were continually exposed to UV light for 10.25 hours. In a cold test, the sample was covered with dry ice at approximately −70 C. After the torture tests, a knife was used to scratch the protrusions. The knife cut through the protrusions without causing delamination and cracks. All protrusions passed the tests.
7) Clamp test: the charging current was measured during clamping of the electrostatic chuck, for both charging and discharging of the electrodes. The waveform was found to stay uniform and properly formed under all operating conditions (including varying back side gas pressures, in vacuum and in air).
8) Gas Leak Rate tests: similar gas leak rate tests were performed to those shown in Table 1, above. No arcing, a high clamp force and a low gas flow rate were found. Similar results were found both before and after a 500K cycle clamp/declamp test.
9) Materials Purity tests: three samples were made (photo-patternable polymer film; laminated photo-patternable polymer film on silicon wafer without additional processing; and fully formed photo-patternable polymer protrusions on a silicon wafer). The three samples were surface-extracted using 5% HNO3 for one hour at room temperature and the resulting solutions were measured for 19 metals using inductively coupled plasma mass spectrometry (ICP-MS). The results found acceptably low levels of atoms per square centimeter of the 19 metals.
10) Clamp/Declamp Cycle Test: After a 500K cycle clamp/declamp test, the height and roughness of protrusions and gas seals did not change. Table 2 shows the results. Profilometry showed that the shapes of the protrusions and gas seals likewise did not change.
In accordance with an embodiment of the invention, photo-patternable polymer protrusions may be used that include materials of low Young's modulus and high tensile strength. Table 3 shows a comparison of mechanical properties of various materials, with the PerMX and SU8 materials being examples of epoxy based photo-patternable polymers. It can be seen in Table 3 that the thermal stability of polyether imide (PEI), epoxy and polyimide are similar; but the tensile strength of epoxy and polyimide based polymers are higher than PEI. The elastic modulus (stiffness) of PEI, epoxy and polyimide are similar, and all of them are softer than diamond like carbon (DLC). In accordance with an embodiment of the invention, a polymer substance may be used for protrusions that has a tensile strength of greater than about 70 megapascals (MPa), such as between about 70 MPa and 80 MPa; and that has a Young's modulus of less than about 3.5 gigapascals (GPa), such as between about 2 GPa and 3 GPa. Other substances may be used.
In accordance with an embodiment of the invention, the hardness of polymer protrusions, such as epoxy photo-patternable polymer protrusions, may be between about 350 MPa and about 450 MPa. The bonding strength of the polymer protrusions may be greater than about 15 MPa between the polymer protrusions and an underlying charge control layer. In some embodiments, the adhesion of the polymer protrusions may be sufficient to permit the charge control layer (802 of
In accordance with an embodiment of the invention, photo-patternable polymer protrusions set forth herein may, for example, be produced as set forth herein, to adhere to an underlying charge control layer. The charge control layer may, for example, include silicon carbide, diamond like carbon, or another material. Such a charge control layer may have a surface resistivity between about 108 ohms per square to about 1011 ohms per square.
In another embodiment according to the invention, photo-patternable protrusions set forth herein may be used on a grounded electrostatic chuck, for example as shown in the embodiments of
Although photo-patternable polymers are discussed herein, similar spray-coating methods may be used with other soft materials, in accordance with an embodiment of the invention. For example, conductive polymers, high chemical-resistance polymers, high temperature resistant polymers, and other materials may be spray coated with a shadow mask to make soft protrusions for electrostatic chucks. In one example, conductive polymers may be spray coated to form conductive soft embossments for a grounded electrostatic chuck. For example, the conductive polymers may comprise a blend of a carbon nanotube and a polymer (such as Entegris TEGO™ polymer, sold by Entegris, Inc. of Billerica, Mass., U.S.A.); a carbon nanotube filled polycarbonate; and/or a conductive nanoparticle doped polymer. Such conductive polymer protrusions may be used with a wrap-around DLC coating for grounding of the electrostatic chuck, such as one of the conductive paths that are taught in International Application No. PCT/US2011/050841, published as WO2012/033922, entitled “High Conductivity Electrostatic Chuck,” the entire teachings of which are hereby incorporated herein by reference. Various features of embodiments described herein may be combined; for example, heights and surface roughnesses of protrusions discussed herein may be obtained with a variety of different protrusions, including photo-patternable protrusions taught herein.
In addition, in accordance with an embodiment of the invention, polymers taught herein, including photo-patternable polymers, conductive polymers, high chemical-resistance polymers and high temperature resistant polymers, may be used for protrusions on vacuum chucks and mechanical chucks.
In accordance with an embodiment of the invention, an electrostatic chuck is a Coulombic chuck. The dielectric can include aluminum, for example alumina or aluminum nitride. In a further embodiment according to the invention, an electrostatic chuck is a Johnsen-Rahbek electrostatic chuck. Alternatively, the electrostatic chuck may not be a Johnsen-Rahbek electrostatic chuck, and the dielectric may be chosen so that a Johnsen-Rahbek (JR) force or partial hybrid Johnsen-Rahbek force does not act on the wafer or substrate.
The teachings of all patents, published applications and references cited herein are incorporated by reference in their entirety.
While this invention has been particularly shown and described with references to example embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the scope of the invention encompassed by the appended claims.
This application is the U.S. National Stage of International Application No. PCT/US2013/067301, filed Oct. 29, 2013, which designates the U.S., published in English, which is a continuation of U.S. application Ser. No. 13/667,516, filed Nov. 2, 2012, which is a continuation-in-part of U.S. application Ser. No. 13/266,657, filed Oct. 27, 2011, which is the U.S. National Stage of International Application No. PCT/US2010/034667, filed on May 13, 2010, published in English, which claims the benefit of U.S. Provisional Application No. 61/216,305, filed on May 15, 2009. The entire teachings of the above applications are incorporated herein by reference.
Filing Document | Filing Date | Country | Kind |
---|---|---|---|
PCT/US2013/067301 | 10/29/2013 | WO | 00 |
Publishing Document | Publishing Date | Country | Kind |
---|---|---|---|
WO2014/070764 | 5/8/2014 | WO | A |
Number | Name | Date | Kind |
---|---|---|---|
4184188 | Briglia | Jan 1980 | A |
5179498 | Hongoh et al. | Jan 1993 | A |
5250137 | Arami et al. | Oct 1993 | A |
5310453 | Fukasawa et al. | May 1994 | A |
5350479 | Collins et al. | Sep 1994 | A |
5382311 | Ishikawa et al. | Jan 1995 | A |
5413360 | Atari et al. | May 1995 | A |
5539609 | Collins et al. | Jul 1996 | A |
5557215 | Saeki et al. | Sep 1996 | A |
5583736 | Anderson et al. | Dec 1996 | A |
5583737 | Collins et al. | Dec 1996 | A |
5591269 | Arami et al. | Jan 1997 | A |
5625526 | Watanabe et al. | Apr 1997 | A |
5656093 | Burkhart et al. | Aug 1997 | A |
5691876 | Chen et al. | Nov 1997 | A |
5701228 | Ishii | Dec 1997 | A |
5740009 | Pu et al. | Apr 1998 | A |
5748434 | Rossman et al. | May 1998 | A |
5761023 | Lue et al. | Jun 1998 | A |
5764471 | Burkhart | Jun 1998 | A |
5777838 | Tamagawa et al. | Jul 1998 | A |
5779803 | Kurono et al. | Jul 1998 | A |
5792562 | Collins et al. | Aug 1998 | A |
5800871 | Collins et al. | Sep 1998 | A |
5825607 | Burkhart | Oct 1998 | A |
5851298 | Ishii | Dec 1998 | A |
5868848 | Tsukamoto | Feb 1999 | A |
5870271 | Herchen | Feb 1999 | A |
5880924 | Kumar et al. | Mar 1999 | A |
5886865 | Parkhe et al. | Mar 1999 | A |
5886866 | Hausmann | Mar 1999 | A |
5903428 | Grimard et al. | May 1999 | A |
5908334 | Chen et al. | Jun 1999 | A |
5914568 | Nonaka | Jun 1999 | A |
5916689 | Collins et al. | Jun 1999 | A |
5923521 | Burkhart | Jul 1999 | A |
5946183 | Yamada et al. | Aug 1999 | A |
5946184 | Kanno et al. | Aug 1999 | A |
5969934 | Larsen | Oct 1999 | A |
5997962 | Ogasawara et al. | Dec 1999 | A |
6028762 | Kamitani | Feb 2000 | A |
6051122 | Flanigan | Apr 2000 | A |
6055150 | Clinton et al. | Apr 2000 | A |
6072685 | Herchen | Jun 2000 | A |
6081414 | Flanigan et al. | Jun 2000 | A |
6088213 | Herchen | Jul 2000 | A |
6104595 | Brown | Aug 2000 | A |
6104596 | Hausmann | Aug 2000 | A |
6108189 | Weldon et al. | Aug 2000 | A |
6117246 | Parkhe et al. | Sep 2000 | A |
6125025 | Howald et al. | Sep 2000 | A |
6134096 | Yamada et al. | Oct 2000 | A |
6175485 | Krishnaraj et al. | Jan 2001 | B1 |
6198616 | Dahimene et al. | Mar 2001 | B1 |
6215640 | Hausmann | Apr 2001 | B1 |
6217655 | Kumar et al. | Apr 2001 | B1 |
6243251 | Kanno et al. | Jun 2001 | B1 |
RE37294 | Knapp et al. | Jul 2001 | E |
6259592 | Ono | Jul 2001 | B1 |
6304424 | Mett et al. | Oct 2001 | B1 |
6338861 | Gozu et al. | Jan 2002 | B1 |
6370004 | Yamaguchi | Apr 2002 | B1 |
6373681 | Kanno et al. | Apr 2002 | B2 |
6414834 | Weldon et al. | Jul 2002 | B1 |
6433346 | Hirayanagi | Aug 2002 | B1 |
6440878 | Yang et al. | Aug 2002 | B1 |
6441939 | Bigo et al. | Aug 2002 | B1 |
6452775 | Nakajima | Sep 2002 | B1 |
6475336 | Hubacek | Nov 2002 | B1 |
6483690 | Nakajima et al. | Nov 2002 | B1 |
6490145 | Kholodenko et al. | Dec 2002 | B1 |
6522519 | Hirayanagi | Feb 2003 | B1 |
6567257 | Brown | May 2003 | B2 |
6608745 | Tsuruta et al. | Aug 2003 | B2 |
6625003 | Loo et al. | Sep 2003 | B2 |
6628503 | Sogard | Sep 2003 | B2 |
6634177 | Lin et al. | Oct 2003 | B2 |
6641939 | Lee et al. | Nov 2003 | B1 |
6646233 | Kanno et al. | Nov 2003 | B2 |
6678143 | Masuda et al. | Jan 2004 | B2 |
6687113 | Saito et al. | Feb 2004 | B2 |
6721162 | Weldon et al. | Apr 2004 | B2 |
6723274 | Divakar | Apr 2004 | B1 |
6754062 | Logan et al. | Jun 2004 | B2 |
6785115 | Tsuruta et al. | Aug 2004 | B2 |
6790375 | Howald et al. | Sep 2004 | B1 |
6813134 | Tatsumi et al. | Nov 2004 | B2 |
6835415 | Blaedel et al. | Dec 2004 | B2 |
6839217 | Larsen | Jan 2005 | B1 |
6853953 | Brcka et al. | Feb 2005 | B2 |
6863281 | Endou et al. | Mar 2005 | B2 |
6950297 | Kosakai | Sep 2005 | B2 |
6982125 | LaCourse et al. | Jan 2006 | B2 |
7042697 | Tsuruta et al. | May 2006 | B2 |
7052553 | Shih et al. | May 2006 | B1 |
7075771 | Brcka | Jul 2006 | B2 |
7078655 | Ito et al. | Jul 2006 | B1 |
7088431 | Ottens et al. | Aug 2006 | B2 |
7142405 | Miyaji et al. | Nov 2006 | B2 |
7175737 | Sago et al. | Feb 2007 | B2 |
7187433 | Ottens et al. | Mar 2007 | B2 |
7196896 | Howald et al. | Mar 2007 | B2 |
7198276 | Caldwell et al. | Apr 2007 | B2 |
7209339 | Kitabayashi et al. | Apr 2007 | B2 |
7220319 | Sago et al. | May 2007 | B2 |
7307697 | GanapathiSubramanian et al. | Dec 2007 | B2 |
7330346 | Ikuhara et al. | Feb 2008 | B2 |
7335315 | Matsuda et al. | Feb 2008 | B2 |
7824498 | Parkhe et al. | Nov 2010 | B2 |
8861170 | Lin | Oct 2014 | B2 |
8879233 | Cooke et al. | Nov 2014 | B2 |
9025305 | Cooke et al. | May 2015 | B2 |
20010003298 | Shamouilian et al. | Jun 2001 | A1 |
20010019472 | Kanno et al. | Sep 2001 | A1 |
20010055190 | Saito et al. | Dec 2001 | A1 |
20020000521 | Brown | Jan 2002 | A1 |
20020008954 | Leeser | Jan 2002 | A1 |
20020012219 | Tsuruta et al. | Jan 2002 | A1 |
20020021545 | Tatsumi et al. | Feb 2002 | A1 |
20020027762 | Yamaguchi | Mar 2002 | A1 |
20020036373 | Kosakai | Mar 2002 | A1 |
20020109955 | Masuda et al. | Aug 2002 | A1 |
20020130276 | Sogard | Sep 2002 | A1 |
20020135969 | Weldon et al. | Sep 2002 | A1 |
20020144657 | Chiang et al. | Oct 2002 | A1 |
20020144786 | Chiang et al. | Oct 2002 | A1 |
20020146511 | Chiang et al. | Oct 2002 | A1 |
20020158270 | Yamamoto et al. | Oct 2002 | A1 |
20020159217 | Tsuruta et al. | Oct 2002 | A1 |
20020167779 | Carroll et al. | Nov 2002 | A1 |
20020170882 | Akiba | Nov 2002 | A1 |
20030010292 | Kholodenko et al. | Jan 2003 | A1 |
20030053282 | Lee | Mar 2003 | A1 |
20030053283 | Loo et al. | Mar 2003 | A1 |
20030095370 | Tsuruta et al. | May 2003 | A1 |
20030123213 | Kosakai | Jul 2003 | A1 |
20030165043 | Logan et al. | Sep 2003 | A1 |
20030168439 | Kanno et al. | Sep 2003 | A1 |
20040040665 | Mizuno et al. | Mar 2004 | A1 |
20040055709 | Boyd, Jr. et al. | Mar 2004 | A1 |
20040070916 | Tsuruta et al. | Apr 2004 | A1 |
20040121192 | LaCourse et al. | Jun 2004 | A1 |
20040124595 | Miyaji et al. | Jul 2004 | A1 |
20040131775 | Blaedel et al. | Jul 2004 | A1 |
20040160021 | Tatsumi et al. | Aug 2004 | A1 |
20040173469 | Udo et al. | Sep 2004 | A1 |
20040190215 | Weldon et al. | Sep 2004 | A1 |
20040233608 | Brcka | Nov 2004 | A1 |
20040233609 | Yoshida et al. | Nov 2004 | A1 |
20050018377 | Cho et al. | Jan 2005 | A1 |
20050029244 | Ito et al. | Feb 2005 | A1 |
20050036268 | Howald et al. | Feb 2005 | A1 |
20050045106 | Boyd, Jr. et al. | Mar 2005 | A1 |
20050069726 | Douglas et al. | Mar 2005 | A1 |
20050079737 | Kellerman et al. | Apr 2005 | A1 |
20050087939 | Caldwell et al. | Apr 2005 | A1 |
20050095410 | Mazurkiewicz | May 2005 | A1 |
20050106320 | Mehregany et al. | May 2005 | A1 |
20050247672 | Tatsumi | Nov 2005 | A1 |
20050263077 | GanapathiSubramanian et al. | Dec 2005 | A1 |
20050264134 | GanapathiSubramanian et al. | Dec 2005 | A1 |
20060021705 | Imai et al. | Feb 2006 | A1 |
20060108231 | Weichart | May 2006 | A1 |
20060112969 | Shih et al. | Jun 2006 | A1 |
20060121195 | Udo et al. | Jun 2006 | A1 |
20060158823 | Mizuno et al. | Jul 2006 | A1 |
20070047170 | Sun et al. | Mar 2007 | A1 |
20070109714 | Chung | May 2007 | A1 |
20070128570 | Goto et al. | Jun 2007 | A1 |
20070195482 | Muka et al. | Aug 2007 | A1 |
20070217114 | Sasaki et al. | Sep 2007 | A1 |
20070217118 | Ikuhara et al. | Sep 2007 | A1 |
20070222131 | Fukumoto et al. | Sep 2007 | A1 |
20070223173 | Fujisawa et al. | Sep 2007 | A1 |
20070253139 | Nakano et al. | Nov 2007 | A1 |
20070258184 | Lee | Nov 2007 | A1 |
20070258186 | Matyushkin et al. | Nov 2007 | A1 |
20070283891 | Okayama | Dec 2007 | A1 |
20080017104 | Matyushkin et al. | Jan 2008 | A1 |
20080037195 | Himori et al. | Feb 2008 | A1 |
20080037196 | Yonekura et al. | Feb 2008 | A1 |
20080041312 | Matsuyama et al. | Feb 2008 | A1 |
20080062609 | Himori et al. | Mar 2008 | A1 |
20080062610 | Himori et al. | Mar 2008 | A1 |
20080062611 | Himori et al. | Mar 2008 | A1 |
20080062612 | Morioka et al. | Mar 2008 | A1 |
20080066676 | Mariner et al. | Mar 2008 | A1 |
20080073032 | Koshiishi et al. | Mar 2008 | A1 |
20080083700 | Bernard et al. | Apr 2008 | A1 |
20080100983 | Purohit et al. | May 2008 | A1 |
20080106842 | Ito et al. | May 2008 | A1 |
20080144251 | Tao et al. | Jun 2008 | A1 |
20080239614 | Blake et al. | Oct 2008 | A1 |
20090242544 | Kano | Oct 2009 | A1 |
20090284894 | Cooke | Nov 2009 | A1 |
20120044609 | Cooke et al. | Feb 2012 | A1 |
20130070384 | Cooke et al. | Mar 2013 | A1 |
20130120897 | Lin et al. | May 2013 | A1 |
20130155569 | Suuronen | Jun 2013 | A1 |
Number | Date | Country |
---|---|---|
1988128 | Jun 2007 | CN |
101043018 | Sep 2007 | CN |
1 119 040 | Jul 2001 | EP |
1 801 961 | Jun 2007 | EP |
02-027748 | Mar 1990 | JP |
02-304946 | Dec 1990 | JP |
5243367 | Sep 1993 | JP |
11-214494 | Jun 1999 | JP |
2000100917 | Apr 2000 | JP |
2002-141404 | May 2002 | JP |
2002-299425 | Oct 2002 | JP |
2003-060020 | Feb 2003 | JP |
2003282688 | Oct 2003 | JP |
200422889 | Jan 2004 | JP |
200533125 | Feb 2005 | JP |
2007158286 | Jun 2007 | JP |
2007-194320 | Aug 2007 | JP |
2008-066707 | Mar 2008 | JP |
2008-160009 | Jul 2008 | JP |
10-2005-0064912 | Jun 2005 | KR |
10-2006-0081562 | Jul 2006 | KR |
100717694 | May 2007 | KR |
10-2007-0066890 | Jun 2007 | KR |
10-0755874 | Sep 2007 | KR |
360937 | Jun 1999 | TW |
WO 9916122 | Apr 1999 | WO |
WO 9925006 | May 1999 | WO |
WO 9929001 | Jun 1999 | WO |
WO 9948148 | Sep 1999 | WO |
WO 9952144 | Oct 1999 | WO |
WO 9954928 | Oct 1999 | WO |
WO 9957753 | Nov 1999 | WO |
WO 9960613 | Nov 1999 | WO |
WO 9962115 | Dec 1999 | WO |
WO 0019519 | Apr 2000 | WO |
WO 0019592 | Apr 2000 | WO |
WO 0035003 | Jun 2000 | WO |
WO 0142163 | Jun 2001 | WO |
WO 0231219 | Apr 2002 | WO |
WO 03003449 | Jan 2003 | WO |
WO 03008666 | Jan 2003 | WO |
WO 2004027839 | Apr 2004 | WO |
WO 2004059701 | Jul 2004 | WO |
WO 2004059714 | Jul 2004 | WO |
WO 2004107387 | Dec 2004 | WO |
WO 2005119802 | Dec 2005 | WO |
WO 2006060234 | Jun 2006 | WO |
WO 2007043519 | Apr 2007 | WO |
WO 2007064435 | Jun 2007 | WO |
WO 2007100571 | Sep 2007 | WO |
WO 2008088471 | Jul 2008 | WO |
WO 2008118683 | Oct 2008 | WO |
WO 2009013803 | Jan 2009 | WO |
WO 2009142710 | Nov 2009 | WO |
WO 2010132640 | Nov 2010 | WO |
WO 2011149918 | Dec 2011 | WO |
WO 2012033922 | Mar 2012 | WO |
Entry |
---|
Final Office Action for U.S. Appl. No. 12/454,336, dated Jan. 7, 2016, entitled “Electrostatic Chuck”. |
Notice of Allowance for U.S. Appl. No. 13/266,657, “Electrostatic Chuck with Polymer Protrusions”, Date Mailed: Apr. 10, 2014. |
Notice of Allowance for U.S. Appl. No. 13/667,516, “Electrostatic Chuck with Photo-Patternable Soft Protrusion Contact Surface”, Date Mailed: Jun. 13, 2014. |
Final Office Action for U.S. Appl. No. 13/699,279, “High Surface Resistivity Electrostatic Chuck”; Date Mailed: Aug. 11, 2014. |
Final Office Action for U.S. Appl. No. 12/454,336, “Electrostatic Chuck”; Date Mailed: Sep. 11, 2014. |
Search Report for Chinese Application No. 201080019939.2 “Electrostatic Chuck With Polymer Protrusions”; Issued: Sep. 4, 2014. |
Search Report for Chinese Application No. 201180026596.7 “High Surface Resistivity Electrostatic Chuck”; Issued: Nov. 10, 2014. |
Notice of Allowance for U.S. Appl. No. 13/699,279 “High Surface Resistivity Electrostatis Chuck”, Date of Mailing: Dec. 31, 2014. |
Non-Final Office Action for U.S. Appl. No. 12/454,336, “Electrostatic Chuck”; Date Mailed: Mar. 4, 2015. |
Second Office Action for Chinese Application No. 201180026596.7 “High Surface Resistivity Electrostatic Chuck”; Dated: Apr. 14, 2015. |
Office Action for Japanese Application No. 2013512146 “High Surface Resistivity Electrostatic Chuck”; Dated Mar. 31, 2015. |
Final Office Action for U.S. Appl. No. 12/454,336, entitled “Electrostatic Chuck”, Date Mailed: Oct. 15, 2013. |
International Preliminary Report on Patentability from counterpart International Application No. PCT/US2009/003015, entitled “Electrostatic Chuck”. |
International Preliminary Report on Patentability from International Application No. PCT/US2011/037712, “High Surface Resistivity Electrostatic Chuck”, Dated: Sep. 18, 2012. |
International Search Report and the Written Opinion of the International Searching Authority mailed Jan. 16, 2014 for International Application No. PCT/US2013/067301 entitled “Electrostatic Chuck With Photo-Patternable Soft Protrusion Contact Surface”. |
International Search Report from International Application No. PCT/US2009/003015, entitled “Electrostatic Chuck”. |
Non-Final Office Action for U.S. Appl. No. 12/454,336 entitled “Electrostatic Chuck”, dated Dec. 20, 2012. |
Non-Final Office Action for U.S. Appl. No. 12/454,336, entitled “Electrostatic Chuck”; Date Mailed: Feb. 26, 2014. |
Non-Final Office Action for U.S. Appl. No. 12/454,336, entitled “Electrostatic Chuck”, Date Mailed: Jul. 10, 2012. |
Non-Final Office Action for U.S. Appl. No. 12/454,336, entitled “Electrostatic Chuck”, Date Mailed: Mar. 26, 2013. |
Non-Final Office Action for U.S. Appl. No. 13/266,657, entitled “Electrostatic Chuck with Polymer Protrusions”, Date Mailed: Nov. 8, 2013. |
Non-Final Office Action for U.S. Appl. No. 13/699,279, entitled “High Surface Resistivity Electrostatic Chuck”; Date Mailed: Mar. 12, 2014. |
Notice of Allowance for U.S. Appl. No. 13/266,657 entitled “Electrostatic Chuck with Polymer Protrusions”, Date Mailed: Jul. 18, 2014. |
Notification of Transmittal of the International Search Report and Written Opinion of the International Searching Authority from International Application No. PCT/US2011/037712, “High Surface Resistivity Electrostatic Chuck”, Dated: Jan. 10, 2012. |
Notification of Transmittal of the International Search Report and Written Opinion of the International Searching Authority from International Application No. PCT/US2010/034667 entitled “Electrostatic Chuck With Polymer Protrusions”, Dated Feb. 1, 2011. |
Search Report for Taiwan Application No. 098115989 entitled “Electrostatic Chuck”, Date of Completion: Feb. 17, 2014. |
Supplementary European Search Report, for European Application No. EP10775520, entitled “Electrostatic Chuck With Polymer Protrusions”, Dated: Oct. 18, 2013. |
Written Opinion of the International Preliminary Examining Authority for International Application No. PCT/US2013/067301 entitled “Electrostatic Chuck With Photo-Patternable Soft Protrusion Contact Surface”, Dated: Oct. 16, 2014. |
Written Opinion of the International Searching Authority from counterpart International Application No. PCT/US2009/003015, entitled “Electrostatic Chuck”, Dated Jul. 16, 2009. |
Notification of Transmittal of the International Preliminary Report on Patentability for International Application No. PCT/US2013/067301, Electrostatic Chuck With Photo-Patternable Soft Protrusion Contact Surface, Dated: Apr. 2, 2015. |
Notice of Allowance and Fee(s) Due for U.S. Appl. No. 12/454,336, entitled “Electrostatic Chuck”, Date Mailed: Jul. 6, 2016. |
TW Office Action & Search Report from TW Application No. 102139927, mailed Jan. 11, 2017, 6 pages. |
Number | Date | Country | |
---|---|---|---|
20150294891 A1 | Oct 2015 | US |
Number | Date | Country | |
---|---|---|---|
61216305 | May 2009 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 13667516 | Nov 2012 | US |
Child | 14439464 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 13266657 | US | |
Child | 13667516 | US |