ELECTROSTATIC DISCHARGE PROTECTION DEVICE

Abstract

An electrostatic discharge (ESD) protection device includes a semiconductor substrate, a gate structure, a source doped region, a drain doped region, source silicide patterns, and drain silicide patterns. The gate structure is disposed on the semiconductor substrate. The source doped region and the drain doped region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction, respectively. The source silicide patterns are disposed on the source doped region. The source silicide patterns are arranged in a second direction and separated from one another. The drain silicide patterns are disposed on the drain doped region. The drain silicide patterns are arranged in the second direction and separated from one another. The source silicide patterns and the drain silicide patterns are arranged misaligned with one another in the first direction.

Description

Claims

1. An electrostatic discharge (ESD) protection device, comprising: a semiconductor substrate;a gate structure disposed on the semiconductor substrate;a source doped region and a drain doped region disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction, respectively;source silicide patterns disposed on the source doped region, wherein the source silicide patterns are arranged in a second direction and separated from one another; anddrain silicide patterns disposed on the drain doped region, wherein the drain silicide patterns are arranged in the second direction and separated from one another, and the source silicide patterns and the drain silicide patterns are arranged misaligned with one another in the first direction.

2. The ESD protection device according to claim 1, wherein two of the source silicide patterns located adjacent to each other are separated by a first gap, and one of the drain silicide patterns overlaps the first gap when viewed in the first direction.

3. The ESD protection device according to claim 2, wherein two of the drain silicide patterns located adjacent to each other are separated by a second gap, and one of the source silicide patterns overlaps the second gap when viewed in the first direction.

4. The ESD protection device according to claim 2, wherein the one of the drain silicide patterns further overlaps the two of the source silicide patterns located adjacent to each other when viewed in the first direction.

5. The ESD protection device according to claim 1, further comprising: a spacer structure disposed on a sidewall of the gate structure, wherein the source silicide patterns are separated from the gate structure and the spacer structure.

6. The ESD protection device according to claim 1, further comprising: a silicide block pattern disposed on the semiconductor substrate, wherein the source silicide patterns are separated from one another by the silicide block pattern, and the drain silicide patterns are separated from one another by the silicide block pattern.

7. The ESD protection device according to claim 6, wherein in a top view diagram of the ESD protection device, each of the source silicide patterns and each of the drain silicide patterns are surrounded by the silicide block pattern.

8. The ESD protection device according to claim 6, wherein the silicide block pattern is formed with an insulation hard mask.

9. The ESD protection device according to claim 1, wherein in a top view diagram of the ESD protection device, a center point of one of the source silicide patterns and a center point of one of the drain silicide patterns are located on a straight line extending in a first oblique direction, the first oblique direction is not parallel with the first direction, and the first oblique direction is not parallel with the second direction.

10. The ESD protection device according to claim 1, further comprising: source contacts disposed on the source silicide patterns; anddrain contacts disposed on the drain silicide patterns, wherein in a top view diagram of the ESD protection device, a length of a straight line connected with one of the source contacts and one of the drain contact is equal to the shortest distance between the source contacts and the drain contacts, and the straight line extends in a second oblique direction, wherein the second oblique direction is not parallel with the first direction, and the second oblique direction is not parallel with the second direction.

11. The ESD protection device according to claim 1, wherein the first direction is orthogonal to the second direction.

12. The ESD protection device according to claim 1, wherein a distance between the gate structure and one of the source silicide patterns in the first direction is different from a distance between the gate structure and one of the drain silicide patterns in the first direction.

13. The ESD protection device according to claim 1, wherein a distance between the gate structure and one of the source silicide patterns in the first direction is substantially equal to a distance between the gate structure and one of the drain silicide patterns in the first direction.

14. An electrostatic discharge (ESD) protection device, comprising: a semiconductor substrate;a gate structure disposed on the semiconductor substrate;a source doped region and a drain doped region disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction, respectively;at least one source silicide pattern disposed on the source doped region;at least one drain silicide pattern disposed on the drain doped region;first contact structures disposed on the at least one source silicide pattern, wherein the first contact structures are arranged in a second direction and separated from one another; andsecond contact structures disposed on the at least one drain silicide pattern, wherein the second contact structures are arranged in the second direction and separated from one another, and the first contact structures and the second contact structures are arranged misaligned with one another in the first direction.

15. The ESD protection device according to claim 14, wherein two of the first contact structures located adjacent to each other are separated by a first gap, and one of the second contact structures overlaps the first gap when viewed in the first direction.

16. The ESD protection device according to claim 15, wherein each of the first contact structures comprises source contacts separated from one another, and a distance between the source contacts in the second direction is less than a length of the first gap in the second direction.

17. The ESD protection device according to claim 14, wherein two of the second contact structures located adjacent to each other are separated by a second gap, and one of the first contact structures overlaps the second gap when viewed in the first direction.

18. The ESD protection device according to claim 17, wherein each of the second contact structures comprises drain contacts separated from one another, and a distance between the drain contacts in the second direction is less than a length of the second gap in the second direction.

19. The ESD protection device according to claim 14, wherein the ESD protection device comprises a plurality of the source silicide patterns separated from one another, and each of the first contact structures is disposed on one of the plurality of the source silicide patterns.

20. The ESD protection device according to claim 14, wherein the ESD protection device comprises a plurality of the drain silicide patterns separated from one another, and each of the second contact structures is disposed on one of the plurality of the drain silicide patterns.