Information
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Patent Application
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20230294994
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Publication Number
20230294994
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Date Filed
March 18, 2023a year ago
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Date Published
September 21, 2023a year ago
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Inventors
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Original Assignees
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CPC
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International Classifications
- C01B32/26
- C01B32/28
- C23C16/04
- C23C16/27
- C23C16/56
- C30B29/04
- C30B33/08
Abstract
A method of a growing an embedded single crystal diamond structure, comprising: disposing a single crystal diamond on a non-diamond substrate, wherein the non-diamond substrate is larger than the single crystal diamond; masking a top portion of the single crystal diamond using a masking material; and using a chemical vapor deposition (CVD) growth chamber, growing polycrystalline diamond material surrounding the single crystal diamond in order to join the single crystal diamond to the polycrystalline diamond material.
Claims
- 1-9. (canceled)
- 10. An embedded single crystal diamond structure comprising:
a single crystal diamond; anda polycrystalline diamond surrounding at least a portion of one edge of the single crystal diamond, wherein thickness of polycrystalline diamond is more than a thickness of single crystal diamond, and wherein boundary between the single crystal diamond and the polycrystalline diamond has a Raman full-width half maxima (FWHM) ranging from 2 cm-1 to 2.5 cm-1.
- 11. The embedded single crystal diamond structure as defined in claim 10 wherein the single crystal diamond has a thickness of 2 µm or less.
- 12. The embedded single crystal diamond structure as defined in claim 10, wherein the single crystal diamond is having a thickness of less than 10 microns (µm).
- 13. The embedded single crystal diamond structure as defined in claim 12, wherein the single crystal diamond is having an area of 1.0 mm x 1.0 mm or larger.
- 14. The embedded single crystal diamond structure as defined in claim 13, wherein the thickness of polycrystalline diamond is having a thickness of more than 3 mm.
- 15. The embedded single crystal diamond structure as defined in claim 14, wherein the single crystal diamond and the polycrystalline diamond are having identical purity that enables post-processing step.
- 16. The embedded single crystal diamond structure as defined in claim 10, wherein the single crystal diamond has a thickness of 20 µm or less.
Priority Claims (1)
Number |
Date |
Country |
Kind |
10201709086Q |
Nov 2017 |
SG |
national |
Divisions (1)
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Number |
Date |
Country |
Parent |
16761234 |
May 2020 |
US |
Child |
18186150 |
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US |