Patent Grant
10201072
This application claims priority from Korean Patent Application No. 10-2016-0168341, filed on Dec. 12, 2016, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.
Field
Apparatuses and methods consistent with exemplary embodiments relate to electromagnetic interference (EMI) shielding, and more particularly, to an EMI shielding structure capable of protecting a semiconductor chip, a passive element, and the like included in a package from external environments and simultaneously shielding EMI and a manufacturing method of the EMI shielding structure.
Description of the Related Art
In recent years, demands on portable apparatuses have been rapidly increased in electronic product markets and thus miniaturization and weight lightening of the portable apparatuses are increasingly needed to facilitate portability. Technology for reducing individual sizes of electronic components provided in the portable apparatuses and semiconductor package technology for integrating a plurality of circuit elements mounted on a printed circuit board (PCB) into one package are needed to realize miniaturization and weight reduction of the portable apparatuses. For example, the semiconductor packages which handle a radio frequency (RF) signal need to be miniaturized as well as to include various EMI shielding structures to realize good EMI shielding or EMI immunity characteristics.
A related art EMI shielding structure may include a shield that is formed of a press-processed metallic material and covers circuits elements mounted on a PCB.
In the case of neighboring shielding regions being shielded by covering the shielding regions with a shield can, one shield can may be used for each shielding region. The shield cans may be mounted on a PCB at a fixed interval and side portions of neighboring shield cans may be spaced apart from each other by the fixed interval. The interval is a distance required to fix the shield cans to the PCB. Accordingly, a region on which circuit elements are to be mounted may be reduced by the distance required to install the neighboring shield cans in the PCB. Accordingly, the EMI shielding structure employing the shield can in the related art may cause a high integration ratio of the circuit elements to be degraded.
Separate press processing has to be performed to manufacture the shield can in the related art EMI shielding structure and a material for a shield can may be expensive and thus product cost may be increased.
Exemplary embodiments may overcome the above disadvantages and other disadvantages not described above. Also, an exemplary embodiment is not required to overcome the disadvantages described above, and an exemplary embodiment may not overcome any of the problems described above.
Exemplary embodiments provide an EMI shielding structure suitable for a high integrated circuit and a manufacturing method thereof.
According to an aspect of an exemplary embodiment, there is provided an EMI shielding structure including a printed circuit board (PCB), a plurality of elements mounted on a region of the PCB, an insulating dam provided on a peripheral portion of the region of the PCB and covering a portion of the plurality of elements; an insulating member provided on a remaining portion of the region the PCB that is surrounded by the insulating dam and covering a remaining portion of the plurality of elements; and a shielding layer covering outer surfaces of the insulating dam and the insulating member.
An outer side surface of the insulating dam may be inclined. An outer side surface of the insulating dam may be stepped. An upper corner portion of the insulating dam may be rounded.
The insulating dam may have a width that gradually increases from an upper end toward a lower end. A top surface of the insulating dam may be smooth. A top surface of the insulating member may be coplanar with the top surface of the insulating dam.
The shielding layer may be formed of an electroconductive material sprayed in an atomizing form and have a predetermined thickness. A portion of the shielding layer may be formed of a shielding film. The shielding layer may include a first portion covering an outer side surface of the insulating dam and a portion of a top surface of the insulating dam and a second portion covering a remaining portion of the top surface of the insulating dam and a top surface of the insulating member.
The first portion of the shielding layer may be in contact with or may overlap the second portion of the shielding layer.
An interval between the elements mounted on the PCB may be 0.8 mm.
According to an aspect of another exemplary embodiment, there is provided a method of manufacturing an electromagnetic interference (EMI) shielding structure, the method including forming an insulating dam along peripheral portion of a region of a printed circuit board (PCB) on which a plurality of elements are mounted, the insulating dam covering a portion of the plurality of elements; forming an insulating member on a remaining portion of the region the PCB that is surrounded by the insulating dam, the insulating member covering a remaining portion of the plurality of elements; and forming a shielding layer by covering sides surface and a top surface of the insulating dam and a top surface of the insulating member with an electroconductive material.
The forming of the shielding layer may include forming the shielding layer to a preset thickness by discharging the electroconductive material in an atomizing form or a fine droplet form.
The forming of the shielding layer may include forming a first portion covering the side surface and a portion of the top surface of the insulating dam and forming a second portion covering a remaining portion of the top surface of the insulating dam and the top surface of the insulating member.
A viscosity of a material forming the insulating dam may be different from that of a material forming the insulating member.
The viscosity of the material forming the insulating dam may be larger than that of the material forming the insulating member. The viscosity of the material forming the insulating dam may be in a range of 20,000 cps to 5,000,000 cps and the viscosity of the material forming the insulating member may be in a range of 100 cps to 30,000 cps.
The insulating dam and the insulating member may be formed a thixotropic material or a phase-change (for example, thermoplastic or thermosetting) material having fluidity. The thixotropic material may include at least one selected from the group consisting of synthetic fine silica powder, bentonite, surface-treated calcium carbonate particles, hydrogenated castor oil, metal soaps, aluminum stearate, polyamide wax, oxidized polyethylenes, and polymerized linseed oil. The phase-change material may include at least one selected from the group consisting of polyurethane, polyurea, polyvinyl chloride, polystyrene, acrylonitrile butadiene styrene (ABS), polyamide, acrylic, epoxy, silicone, and polybutylene terephthalate (PBTP).
A viscosity of a material for the shielding layer may be in a range of 1,000 cps to 100,000 cps.
The above and/or other aspects will be more apparent by describing certain exemplary embodiments with reference to the accompanying drawings, in which:
Various exemplary embodiments will now be described more fully with reference to the accompanying drawings. The inventive concept may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure is thorough and complete and fully conveys the scope of the inventive concept to one skilled in the art. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. Like numbers refer to like elements throughout.
It will be understood that when an element is referred to as being “on” or “in contact with” another element, it can be directly on or in direct contact with the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly on” or “in direct contact with” another element, there are no intervening elements present. Other words used to describe the relationship between elements should be interpreted in a like fashion (e.g., “between” versus “directly between,” “adjacent” versus “directly adjacent,” etc.).
It will be understood that, although the terms first, second, etc. may be used herein in reference to elements of the embodiments regardless of an order and/or importance, such elements should not be construed as limited by these terms. The terms are used only to distinguish one element from other elements. For example, without departing from the spirit of the inventive concept, a first element may refer to a second element, and similarly, the second element may refer to the first element.
As used herein, the singular forms “a,” “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises,” “comprising,” “includes” and “including” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, components, and/or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the inventive concept. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this inventive concept belongs.
An EMI shielding structure according to exemplary embodiments may be applied to a smart phone, a display apparatus, a wearable device, and the like.
It will be described in the exemplary embodiments that the EMI shielding structures shield a plurality of circuit elements, but embodiments are not limited thereto and the EMI shielding structure may be formed to shield only single circuit element.
A method of manufacturing an EMI shielding structure according to exemplary embodiments may include forming an insulating structure through a two-stage process. For example, the forming of the insulating structure may include a first-stage process for forming an insulating dam along an outer circumference of a shielding region and a second-stage process for forming an insulating member by injecting an insulating material having a viscosity in the inner side of the insulating dam. When the insulating structure being formed through the two-stage process, the insulating material for the insulating dam may have the viscosity that the insulating material may not roll down after the insulating material discharges from a nozzle and the shape of the insulating dam is substantially maintained as it as. The insulating member may have the viscosity lower than that of the insulating material for the insulating dam and thus may have fluidity so that the insulating member may be filled within a space surrounded by the insulating dam.
The nozzle for forming the insulating dam may include a side guide part and a top guide part configured to guide a discharge direction of the insulating material discharged from a discharge hole from one side and an upper side of the discharge hole. The side guide part may guide the insulating material to be discharged toward the inner side of the shielding region. The top guide part may guide the insulating material to be discharged toward a printed circuit board (PCB) and simultaneously allow the top surface of the insulating dam to be flattened. As the top surface of the insulating dam is formed smoothly, the top surface of the insulating member which is injected into the space surrounded with the insulating dam may be formed to be substantially coplanar with the top surface of the insulating dam. When the top surface of the insulating dam and the top surface of the insulating member are formed to be substantially coplanar without a step, a shielding layer covering the outer surface of the insulating structure may also be formed smoothly in a subsequent process.
In the EMI shielding structure according to exemplary embodiments, the shielding layer having a thin thickness may be formed by coating a shielding material having electric conductivity to the outer surface of the insulating structure configured of the insulating dam and the insulating member. The shielding layer may be formed through a single process which covers the entire outer surface of the insulating structure by spraying the shielding material in an atomizing form.
The shielding layer may be formed through an electrohydrodynamic (EHD) inkjet printing method. The shielding material may be discharged from a nozzle in a fine droplet form and may be dropped onto the insulating structure. Accordingly, the shielding material may cover the insulating structure. For example, the shielding layer may be formed by discharging the shielding material in different modes with respect to the side surface and the top surface of the insulating structure using one nozzle. In this example, the shielding layer formed in the side surface of the insulating structure may be formed through a low-speed precise prototyping mode (for example, cone-jet mode, tilting-jet mode, and the like) and the shielding layer formed in the top surface of the insulating structure may be formed through a rapid prototyping mode (for example, jetting mode, spraying mode, and the like) which is carried out at high speed as compared with the precise prototyping mode. The precise prototyping and the rapid prototyping may be accomplished through control of a discharge method and a discharge amount of the shielding material discharged through the same nozzle.
Hereinafter, EMI shielding structures and manufacturing methods thereof according to an exemplary embodiment will be described in detail with reference to the accompanying drawings.
Referring to
A ground pad 114 may be patterned on the PCB 110. For example, the ground pad 114 may be formed in the PCB 110 so that it does not protrude from an upper surface of the PCB 110 and the top surface of the ground pad 114 is exposed. In this example, the ground pad 114 may be integrally formed with a ground layer formed in the inside of the PCB 110.
A lower end of a shielding layer 150 covering the entire outer surface of the insulating structure 120 may be grounded to the ground pad 114. Ground terminals of the plurality of circuit elements 115, 117, and 119 may be grounded to the ground pad 114.
The circuit element 115 may include a plurality of connection terminals 116 electrically coupled to first connection pads 111 of the PCB 110. The plurality of connection terminals 116 may be formed in a ball grid array (BGA) manner such as a solder ball. However, formation of the connection terminal 116 is not limited to the BGA manner and the connection terminal 116 may be formed in various manners according to a lead type of the circuit element 115, for example, quad flat no lead (QFN), plastic leaded chip carrier (PLCC), quad flat package (QFP), small outline package (SOP), and thin/shrink/thin shrink SOP (TSOP/SSOP/TSSOP).
The remaining circuit elements 117 and 119 may include at least one connection terminal electrically coupled to second connection pads 112 of the PCB 110. The circuit elements 117 and 119 may have a height smaller than or larger than that of the circuit element 115 when the circuit elements 115, 117, and 119 are mounted on the PCB 110. The circuit elements 115, 117, and 119 may be designed to be spaced at a narrow interval, for example, 0.8 mm or less.
Referring to
The insulating structure 120 may include an insulating dam 121 formed along an outer circumference of a shielding region preset on the PCB 110 and an insulating member 125 formed in a space surrounded with the insulating dam 121. The outer periphery of the shielding region may coincide with a periphery of the insulating dam 121 illustrated in
The insulating dam 121 may be formed through a first nozzle (see 216 of
The insulating member 125 may be formed through a second nozzle (see 217 of
The materials for the insulating dam 121 and the insulating member 125 may include a thixotropic material having fluidity or a phase-change (for example, thermoplastic or thermosetting) material having fluidity.
The thixotropic material may include at least one selected from the group consisting of synthetic fine silica powder, bentonite, surface-treated calcium carbonate particles, hydrogenated castor oil, metal soaps, aluminum stearate, polyamide wax, oxidized polyethylenes, and polymerized linseed oil. For example. the metal soaps may include aluminum stearate.
The phase-change material may include at least one selected from the group consisting of polyurethane, polyurea, polyvinyl chloride, polystyrene, acrylonitrile butadiene styrene (ABS), polyamide, acrylic, epoxy, silicone, and polybutylene terephthalate (PBTP).
The shielding layer 150 may be formed to cover an entire outer surface of the insulating structure 120 by spraying a shielding material in an atomizing form through a third nozzle (see 218 of
The shielding layer 150 may be formed of an electroconductive material. The electroconductive material may contain an electroconductive filter and a binder resin.
The electroconductive filler may include a metal such as Ag, Cu, Ni, Al, or Sn or may include a conductive carbon such as carbon black, carbon nanotube (CNT), or graphite. The electroconductive filler may include a metal-coated material such as Ag/Cu, Ag/glass fiber, or Ni/graphite or may include a conductive polymer material such as polypyrrole or polyaniline. The electroconductive filler may be configured in any one of a flake type, a spherical type, a rod type, and a dendrite type or a combination thereof.
The binder resin may include a silicon resin, an epoxy resin, a urethane resin, an alkyd resin, and the like. The material for the shielding layer 150 may further contain additives for improving other performance (for example, a viscosity agent, an antioxidant, a high-molecular surfactant, and the like) and a solvent (for example, water, alcohol, and the like).
Hereinafter, a manufacturing process of the EMI shielding structure 100 according to an exemplary embodiment will be sequentially described with reference to
First, as illustrated in
For example, the insulating structure 120 may be first formed in the shielding region preset in the PCB 110 in a state that the PCB 110 is disposed in the working position and then the shielding layer 150 may be formed. The insulating structure 120 may include the insulating dam 121 and the insulating member 125. In this example, the insulating dam 121 may be first formed and then the insulating member 15 may be formed.
As illustrated in
After the insulating dam 121 is formed, an insulating material may be injected into a space (see S of
The insulating dam 121 and the insulating member 125 formed of the insulating materials having the same material property may be formed sequentially and thus a boundary surface between the insulating dam 121 and the insulating member 125 may be formed.
After the insulating structure 120 is formed, the third nozzle 218 may move while simultaneously discharging a shielding material substantially in an atomizing form toward the insulating structure 120 (see
When the shielding material is sprayed toward the side portion of the insulating dam 121 through the third nozzle 218, an angle of the third nozzle 218 may be appropriately controlled so that the shielding layer 150 may cover the ground pad 114 and a lower end portion 150a of the shielding 150 may be electrically coupled to the ground pad 114.
According to the above-described process for manufacturing the EMI shielding structure 100 according to an exemplary embodiment, the circuit elements may not interfere with a side guide part 216b of the first nozzle 216 while the first nozzle 216 moves along a nozzle moving route and the third nozzle 218 for forming the shielding layer 150 may not move between the circuit elements. Accordingly, the EMI shielding structure 100 may be easily manufactured in the PCB 110 on which the circuit elements are mounted to be spaced at a narrow interval, for example, 0.8 mm or less.
Hereinafter, devices for manufacturing the EMI shielding structure 100 according to an exemplary embodiment will be described with reference to
The device discharge device 200 may include a dispenser 212 configured to discharge a fixed amount of insulating material. The dispenser 212 may include first and second storage chambers 211a and 211b configured to store insulating materials and the first and second nozzles 216 and 217 configured to discharge the insulating materials provided from the storage chambers 211a and 211b, respectively.
The dispenser 212 may include an X-Y-Z-axis moving unit 231 configured to move the first nozzle 216 in X-axis, Y-axis, and Y-axis directions and a rotation driver 219 configured to rotate the first nozzle 216 in a clockwise direction or a counterclockwise direction or to stop rotation of the first nozzle 216. The X-Y-Z-axis moving unit 231 may include a plurality of step motors configured to move the first nozzle 216 in the X-axis, Y-axis, and Z-axis directions. The plurality of step motors may be coupled to a nozzle mounting unit on which the first nozzle 216 is mounted to transfer driving forces to the first nozzle 216. The rotation driver 219 may include a motor configured to provide rotation power and an encoder configured to control a rotation angle of the first nozzle 216 by detecting the number of rotations of the motor. The X-Y-Z-axis moving unit 231 and the rotation driver 219 may be electrically coupled to a controller 250 and may be controlled through the controller 250.
After the insulating dam 121 is formed by discharge of the insulating material by the first nozzle 216 while the first nozzle 216 is moved the X-Y-Z-axis moving unit 231, the second nozzle 217 may discharge the insulating material to the space S surrounded with the insulating dam 121 while moving over the space S.
A discharge hole of the first nozzle 216 may often be cleaned or newly replaced in the material discharge device 200 or an end portion of the first nozzle 216 which discharges the insulating material may not often be accurately aligned with a preset setup position in the material discharge device 200. Accordingly, the material discharge device 200 may include a nozzle position measurement sensor 232 which allows the first nozzle 216 to be set to the setup position.
The nozzle position measurement sensor 232 may include a imaging camera and may be disposed below the first nozzle 216 at a fixed interval. The calibration of the first nozzle 216 may be performed. For example, an end portion of the first nozzle 216 is aligned with a nozzle origin by reading the end position of the first nozzle 216 through an image obtained through the nozzle position measurement sensor 232, comparing the read end position with the nozzle origin value pre-stored in a memory 251, and moving the first nozzle 216 by X and Y values according to a comparison difference. In this example, the movement of the first nozzle 216 may be performed through the movement of a nozzle mounting unit according to the driving of the X-Y-Z-axis moving unit 231.
The material discharge device 200 may set a start point (see Ap of
The PCB reference position measurement sensor 233 may be a sensor configured to determine a PCB loading regular position and may include a imaging camera. The PCB reference position measurement sensor 233 may detect whether or not the PCB, which is loaded into the working space to form the shielding structure, is located in a preset position or may detect a distorted difference from the preset position. For example, in response to the PCB is loaded into a working position, the controller 250 may move the PCB reference position measurement sensor 233 to a preset coordinate of a first reference mark, image the current first reference mark of the PCB, and determine whether or not the PCB reference position measurement sensor 233 is located in the regular position by comparing the currently imaged first reference mark and a preset shape of the first reference mark.
In response to determining that the PCB reference position measurement sensor 233 is located in the regular position, the controller 250 may calculate a position difference between the current coordinate of the first reference mark and the preset coordinate of the first reference mark. Subsequently, the controller 250 may calculate a position difference between a current coordinate of a second reference mark and a preset coordinate of the second reference mark through the same method as the method of calculating the position difference in the coordinate of the first reference mark.
The material discharge device 200 may include a PCB loading and unloading unit 235 configured to load the PCB into the working position to form the insulating dam in the PCB and unload the PCB after the formation of the insulating dam is completed.
The material discharge device 200 may include PCB heater 236 configured to raise a temperature of the PCB to a fixed value to shorten a dry time of the formed insulating dam 121.
The material discharge device 200 may include an input unit 253 configured to directly input moving routes of the first and second nozzles 216 and 217 by the user.
The input unit 253 may include a touch screen for touch input or a conventional key pad. The user may input the moving routes of the first and second nozzles 216 and 217 through the input unit 253. The moving routes of the first and second nozzles input once through the input unit 253 may be stored in the memory 251. The user may correct the nozzle route data stored in the memory 251 through the input unit 253.
Hereinafter, a process of inputting the nozzle moving route of the first nozzle 216 through the input unit 253 will be described.
First, at least two reference marks provided on the PCB loaded into a working position may be imaged through the PCB reference position measurement sensor 233, for example, including a imaging camera (hereinafter, referred to as imaging camera), a distance between the two reference marks may be measured, and the images of the reference marks and the distance value between the two reference marks may be stored in the memory 251. When the PCB has a rectangular shape, the two reference marks may be provided at an upper left portion and a lower right portion of the PCB. The distance between the two reference marks may be substantially represented with a straight-line length of the PCB in a diagonal direction.
For example, when the PCB is loaded into the working position, the user may move the imaging camera to a position in which the first reference mark at the upper left portion of the PCB is located (for example, on the basis of the center of the first reference mark or a portion of the first reference mark) through front, back, left, and right moving buttons provided in the input unit 253 and then press a storage button provided in the input unit 253. The controller 250 may calculate coordinates X1, Y1, and Z1 of the first reference mark by calculating a distance of the first reference mark spaced from the preset origin (0,0,0) and store the calculated coordinates X1, Y1, and Z1 in the memory 251. The imaging position of the imaging camera which moves together with the first nozzle 216 may be offset at a fixed interval from the center of the first nozzle 216. Accordingly, the X1, Y1, and Z1 coordinates of the first reference mark may be calculated through the controller 250 in consideration of the offset value. In response to a shoot button being pressed by the user, the image of the first reference mark may be stored in the memory 251.
Subsequently, the user may move the imaging camera to a position in which the second reference mark at the lower right portion of the PCB is located (for example, on the basis of the center of the second reference mark or a portion of the second reference mark) through the front, back, left, and right moving buttons provided in the input unit 253 and then press the storage button provided in the input unit 253. The controller 250 may calculate coordinates X2, Y2, and Z2 of the second reference mark by calculating a distance of the second reference mark spaced from the preset origin (0,0,0) and store the calculated coordinates X2, Y2, and Z2 in the memory. In response to the shoot button being pressed by the user, the image of the second reference mark may be stored in the memory 251. Similar to the process of calculating the coordinates X1, Y1, and Z1 of the first reference mark described above, the coordinates X2, Y2, and Z2 of the second reference mark may also be calculated by the controller 250 in consideration of the offset value.
The controller 250 may calculate a distance between two positions of the first and second reference marks using the detected positions of the first and second reference marks described above and store the calculated distance in the memory 251.
Then, while the user moves the imaging camera along a route of the insulating dam 121 to be formed on the PCB 110 using the front, rear, left, and right moving buttons of the input unit 253, the user may view a real-time image obtained through the imaging camera and simultaneously input a plurality of coordinates located on the moving route of the first nozzle 216. The corresponding coordinates may be input in response to a coordinate input button provided in the input unit 253 being pressed in a state that the imaging camera is located in any one point of the moving route of the first nozzle 216. The input coordinates may be stored in the memory 251.
The plurality of coordinates may include a coordinate (see Ap of
To program the moving route of the first nozzle 216, the input unit 253 may include a moving button that is manipulated to move the first nozzle 216 to a designated coordinate, a line button configured to input a command which allows the first nozzle 216 to move and simultaneously to discharge the material, and various command buttons such as a rotation button that is manipulated to switch the moving direction of the first nozzle 216. The user may generate the moving route of the first nozzle 216 by matching the command buttons with the coordinate and a rotation angle.
In response to the moving route of the first nozzle 216 being programmed by the user as described above, the controller 250 may automatically form the insulating dam 121 in the PCB 110 by controlling the first nozzle 216 to move along the nozzle moving route while simultaneously discharging the insulating material.
The nozzle route data of the first nozzle 216 input through the input unit 253 may be stored in the memory 251. The controller 250 may move the first nozzle 216 along the previously input route by driving the X-Y-Z-axis moving unit 231 and the rotation driver 219 according to the nozzle route data of the first nozzle stored in the memory 251. The nozzle route data may include a distance that the first nozzle 216 moves to a straight direction along the top surface of the PCB 110 and the rotation direction and angle of the first nozzle 216.
It has been described in the exemplary embodiment that the user directly inputs the moving route of the first nozzle 216 through the input unit 253, but embodiments are not limited thereto. For example, the nozzle moving route may be pre-stored in the memory 251. In this example, a plurality of nozzle moving routes for the first nozzle 216 may be pre-stored to correspond to patterns of the insulating dams 121 variously formed according to products. In addition to the moving route of the first nozzle input through the input unit 253, calibration information, reference position information of the first nozzle, reference position information of the PCB, reference height information of the PCB, and the like may be pre-stored in the memory 251.
As described above, the insulating dam 121 may be formed along the moving route of the first nozzle stored in the memory 251 using the first nozzle 216 and a detailed example will be described with reference to
The first nozzle 216 may be set to a coordinate corresponding to the start point Ap. The controller 250 may drive the rotation driver 219 to rotate the first nozzle 216 to a fixed angle so that an inner surface 216c of the side guide part 216b of the first nozzle 216 is directed toward the inner side of the shielding region.
The first nozzle 216 which is set to the coordinate corresponding to the start point Ap may linearly move in +Y-axis direction along an A section through the X-Y-Z-axis moving unit 231. Then, the first nozzle 216 may moves along a section that a route is bent (a section including a point Bp which couples the A section and a B section). The first nozzle 216 may move along the nozzle moving route through the X-Y-Z-axis unit 231 and simultaneously rotate through the rotation driver 219 so that the inner surface 216c of the side guide part 216b of the first nozzle 216 is continuously directed toward the inner side the shielding region.
After the first nozzle 216 passes through the section that the route is bent, the first nozzle 216 may linearly move in an −X-axis direction along the B section through the X-Y-Z-axis moving unit 231. The first nozzle 216 may sequentially repeat the linear movement and rotation with respect to the remaining C, D, E, and F sections through the X-Y-Z-axis moving unit 231 and the rotation driver 219. In response to the first nozzle 216 being returned to the start point Ap, the route movement of the first nozzle 216 may be completed.
Hereinafter, the first nozzle 216 will be described with reference to
Referring to
The discharge hole 216a may be disposed in a position corresponding to a virtual outer periphery of the shielding region when the first nozzle 216 is set to a position for discharging the insulating material to form the insulating dam 121. A portion of the discharge hole 216a may be located over the ground pad 114 as illustrated in
The side guide part 216b may be formed to be elongated downward from a lower end of the discharge hole 216a along a length direction of the first nozzle 216. Referring to
Referring to
The inner surface 216c of the side guide part 216b may be formed in a curved surface as illustrated in
A lower end 216d of the side guide part 216b may be maintained to be spaced apart from a top surface of the PCB 110 at fixed interval so that the top surface of the PCB 110 may not interfere with the first nozzle 216 while the first nozzle 216 moves along the moving route. For example, when the first nozzle 216 is set to a discharge position, a height of the first nozzle 216 in the Z-axis direction may be set in consideration of the interval between the lower end 216d of the side guide part 216b and the top surface of the PCB 110.
The top guide part 216e may be formed to protrude from one side of the discharge hole 216a in a direction substantially perpendicular to the length direction of the first nozzle 216.
The top guide part 216e may guide the insulating material discharged from the discharge hole 216a toward the inner side of the shielding region together with the side guide part 216b so that the insulating dam 121 may be formed to have a fixed width.
A bottom surface 216f of the top guide part 216e may be flat and extend in parallel to the top surface of the PCB 110 and thus the top surface 121a of the insulating dam 121 may be formed to be flat. When the top surface 121a of the insulating dam 121 is formed to be flat, the top surface 125a of the insulating member 125 formed after the insulating dam 121 is formed may be located substantially to be coplanar with the top surface 121a of the insulating dam 121 without no step. When the shielding layer 150 covering the outer surface of the insulating structure 120 is formed in a subsequent process, the top surface of the shielding layer 150 may also be formed to be flat.
Hereinafter, the second nozzle 217 configured to form the insulating member 125 will be described with reference to
Referring to
Referring to
The insulating material discharged from the second nozzle 217 may have a fluidity to be filled within the space S as described above. The controller 250 may control the discharge amount of the insulating material discharged from the second nozzle 217 so that the top surface 125a of the insulating member 125 is coplanar with the top surface 121a of the insulating dam 121.
Hereinafter, the third nozzle 218 configured to form the shielding layer 150 will be described with reference to
The third nozzle 218 may include an inner tube 218a configured to spray a liquefied shielding material having fluidity and an outer tube 218b which surrounds the inner tube 218a. An inner circumference of the outer tube 218b is spaced from an outer circumference of the inner tube 218a. The third nozzle 218 may be a Coanda nozzle employing the Coanda effect.
A high-pressure atomizing gas may flow between the inner tube 218a and the outer tube 218b of the third nozzle 218. The atomizing gas may serve as an air curtain 223 surrounding a shielding material 221 sprayed from the inner tube 218a while the atomizing gas is spayed outward. Accordingly, the shielding material 221 spayed in an atomizing form may be guided by the air curtain 223 and may be applied only to a certain region (for example, the entire outer surface of the insulating structure 120 and the ground pad 114). Accordingly, the shielding material 221 may be prevented from being applied to regions of the PCB other than the shielding region.
The third nozzle 218 may be tilted at a fixed angle while the shielding material 221 is sprayed toward the side surface of the insulating structure 120. The third nozzle 218 may maintain a posture substantially perpendicular to the top surface of the insulating structure 120 while the shielding material 221 is sprayed toward the top surface of the insulating structure 120.
The controller 250 may control the moving speed of the third nozzle 218 and the discharge amount of the shielding material to form the shielding layer 150 covering the outer surface of the insulating structure 120.
For example, the third nozzle 218 may be provided in a separate spray device configured to spray liquid in an atomizing form. In this example, the spray device may include a storage tank in which a shielding material is stored, a storage tank in which an atomizing gas is stored, and a certain compressor. In another example, the spray device and the third nozzle 218 may be provided as a component of the material discharge device 200.
In the EMI shielding structure 100 according to an exemplary embodiment, the shielding layer 150 may be formed to simultaneously cover the entire outer surface of the insulating structure 120 and the ground pad 114 through a single process using the third nozzle 218. In another example, the shielding layer 150 may be formed by forming a first shielding layer in the side surface of the insulating structure 120, a portion of the top surface of the insulating structure 120 close to the side surface, and the ground pad 114 and forming a second shielding layer in the remaining portion of the top surface of the insulating structure 120. A shielding structure 300 in which a shielding layer is formed in two parts will be described with reference to
Referring to
The insulating structure 320 configured of the insulating dam 321 and the insulating member 325 and a manufacturing method thereof are the same as the insulating structure 120 in the EMI shielding structure 100 and the manufacturing thereof as described above and thus detailed description thereof will be omitted and hereinafter, a structure of the shielding layer 350 and a manufacturing method thereof which are different from the structure of the shielding layer 150 in the EMI shielding structure 100 and the manufacturing method thereof will be described.
The shielding layer 350 may include a first shielding part 351 which covers a side surface of the insulating dam 321 and a portion of a top surface of the insulating dam 321 close to the side surface and a second shielding part 355 which covers the remaining portion of the top surface of the insulating dam 321 uncovered with the first shielding part 351 and a top surface of the insulating member 325. Boundary portions of the first and second shielding parts 351 and 355 may be in contact with each other and thus the first and second shielding parts 351 and 355 may be electrically coupled to each other.
Referring to
In the cone-jet mode, the nozzle 410 and the pin type electrode 370 may be located on the same axis and a droplet discharged from the nozzle 410 may be dropped in a substantially vertical direction with respect to the top surface of the insulating dam 321 and may cover the top surface of the insulating dam 321. When the side surface of the insulating dam 321 is coated with the cone-jet mode, the position of the nozzle 410 may be set so that the droplet discharged from the nozzle 410 is dropped to a corner 321a of the insulating dam 321. The droplet dropped to the corner 321a may roll down by gravity along the side surface of the insulating dam 321 and may cover the side surface of the insulating dam 321. The discharge amount of the shielding material may be controlled so that the shielding material rolled down along the side surface of the insulating dam 321 may not reach the ground pad 314.
The first shielding part 351 may also be formed with the tilting-jet mode as illustrated in
The shielding material may roll down along the insulating dam 321 and move onto the ground pad 314. The shielding material having a large fluidity may pass through the ground pad 314 and move to a position out of the ground pad 314. Accordingly, to overcome the problem, the viscosity of the shielding material may be in a range of 1,000 cps to 100,000 cps.
The discharge direction of a droplet discharged from the nozzle 410 may be controlled by moving the nozzle 410 in a horizontal direction in a state that the pin type electrode 370 is fixed or by moving the pin type electrode 370 to the horizontal direction in a state that the nozzle 410 is fixed. The discharge direction of the droplet discharged from the nozzle 410 may be controlled by simultaneously moving the nozzle 410 and the pin type electrode 370 in horizontal directions different from each other. Changing between the cone-jet mode and the tilting-jet mode may be accomplished by moving at least one of the nozzle 410 and the pin type electrode 370.
The discharge direction of the droplet discharged from the nozzle 410 may be controlled by variously changing the shape and position of the pin type electrode 370. The method of controlling the discharge direction of the droplet will be described with reference to
Referring to
In the cone-jet mode, the nozzle 410 having a lower end 411 formed substantially in parallel to the PCB 110 may be used as illustrated in the left drawing of
In the tilting-jet mode, the nozzle 420 having a lower end 421 formed to be inclined to one side may be used as illustrated in the right drawing of
Referring to
In the cone-jet mode, the center of the hole 372a of the guide ring type electrode 372 may be aligned with the center of the nozzle 410 as illustrated in the left drawing of
In the tilting-jet mode, the center of the hole 372a of the guide ring type electrode 372 may be offset to the left with respect to the center of the nozzle 410 as illustrated in the right drawing of
Referring to
In the cone-jet mode, the center of the hole 372a of the guide ring type electrode 372 may aligned with the center of the nozzle 410 as illustrated in the left drawing of
In the tilting-jet mode, the center of the hole 372a of the guide ring type electrode 372 may be offset to the right with respect to the center of the nozzle 410 as illustrated in the right drawing of
After the first shielding part 351 is formed as described above, the second shielding part 355 may be formed in the insulating structure 320 by changing the discharge mode to a jetting mode or a spraying mode as a rapid prototyping method and discharging a shielding material through the same nozzle. The second shielding part 355 may be formed through the rapid prototyping method and thus the shielding material supplied to form the second shielding part 355 may having a large fluidity and have a viscosity in a range of 50 cps to 10,000 cps.
Referring to
Referring to
Referring to
The shape of the side surface of the insulating dam in the EMI shielding structure according to the exemplary embodiment may be variously formed as illustrated in
Referring to
Referring to
Referring to
Referring to
Referring to
Referring to
In
Referring to
It has described in the above-described exemplary embodiments that the shielding layer is formed by discharging a shielding material having electric conductivity through a nozzle. However, embodiments are not limited thereto and a portion of a shielding layer 1150 in an EMI shielding structure 1100 may be formed of a shielding film 1151 having electric conductivity as illustrated in
A process of forming an insulating structure 1120 including an insulating dam 1121 and an insulating member 1125 in the EMI shielding structure 1100 in a PCB 1110 may be the same as the above-described process of manufacturing the insulating structure 120 in the EMI shielding structure 100, but a process of forming the shielding layer 1150 performed in a subsequent process may be different from the above-described process of manufacturing the shielding layer 150 in the EMI shielding structure 100.
Referring to
The foregoing embodiments and advantages are merely exemplary and are not to be construed as limiting the inventive concept. The present teaching can be readily applied to other types of apparatuses. Also, the description of the exemplary embodiments is intended to be illustrative, and not to limit the scope of the claims, and many alternatives, modifications, and variations will be apparent to those skilled in the art.
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