Information
-
Patent Grant
-
6822241
-
Patent Number
6,822,241
-
Date Filed
Thursday, October 3, 200222 years ago
-
Date Issued
Tuesday, November 23, 200420 years ago
-
Inventors
-
Original Assignees
-
Examiners
- Wells; Nikita
- Hughes; James P.
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CPC
-
US Classifications
Field of Search
US
- 250 4921
- 250 396
- 250 396 R
- 250 398
- 250 4581
- 313 495
- 313 309
- 313 336
- 313 351
- 313 497
- 313 307
- 313 422
- 313 308
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International Classifications
-
Abstract
An emitter device including a focusing array with plural focusing columns to focus emissions from one or more emitters onto a target medium. Relative movement between the target medium and the focused emissions allows each focusing column to focus emissions over an area of the target medium encompassing the movement range. In a preferred embodiment, separate emitter, focusing array and target medium substrates are used. The focusing array may be moveable, or in a particularly preferred embodiment, is affixed to the emitter substrate, in which case the target medium substrate is movable or the focusing array includes beam direction control.
Description
FIELD OF THE INVENTION
The invention is in the microelectronics field and is particularly concerned with devices making use of focused emissions from electron emitters.
BACKGROUND OF THE INVENTION
An emitter emits electrons in response to an electrical signal. Controlling these emissions forms a basis to create useful electrical and optical effects. For example, emissions can affect various media to produce memory and display effects, or be used for electron-beam lithography to produce submicron features in wafers to form microelectronic circuits. Production of focused beams involves the fabrication of an emitter and focusing structure, typically an electrostatic lens.
Emitter surfaces are sensitive to surface conditions and to processing of the emitter surface or processing on the emitter surface. This sensitivity extends across the spectrum of different types of electron emitters, including thermionic emitters, flat emitters such as polysilicon emitters, MOS (metal-oxide-semiconductor) emitters, MIS (metal-insulator-semiconductor) emitters, and MIM (metal-insulator-metal) emitters. This list also includes emitters based on different types of carbon films (nanodispersed carbon, diamond-like films, carbon nanotubes) as well as silicon tips and Spindt tip emitters. Fabrication of lenses and other structures on the emitter substrate can damage the surface or leave a surface that is not clean. Damage or excess material can harm emitter performance attributes, such as uniformity of emission over a given area or the amount of emission from a given emitter. Delivered current and emission uniformity are important parameters for all kinds of vacuum electron sources, and are critical parameters in high frequency and/or precision e-beam devices. Emission uniformity is especially important for applications such as memory storage and lithography, and the amount of emission obtained is very important for memory storage devices.
Various emitter driven devices, such as memories and displays, make use of a target anode medium. The target anode medium is the focus point for the controlled emissions of electrons. A target anode medium is held at hundreds of volts differential from the emitter/cathode structure. A strong “pull-down” attraction therefore exists between the target anode and emitter cathode. This phenomenon manifests strongly in devices having small medium-to-emitter distances, especially where large areas and high applied differential voltages are concerned.
Alignment and focusing length are also important issues in emitter driven devices. Fabrication of lenses on emitter substrates requires the precise alignment of the emitters and the focusing elements. Many high precision alignments are required to properly align a focusing lens with the emitter. With the addition of each focusing element on an emitter substrate, there is also processing complexity, e.g., deep etches that must be stopped at the emitter without damaging or changing the surface of the emitter. The focusing length is also limited to the short distance afforded by the separation of various metal layers in an emitter/focusing lens substrate.
SUMMARY OF THE INVENTION
An emitter device of the invention includes a focusing array with plural focusing columns to focus electron emissions from one or more emitters onto a target medium. Relative movement between the target medium and the focused emissions allows each focusing column to focus emissions over an area of the target medium encompassing the movement range.
In a preferred embodiment, separate emitter, focusing array and target medium substrates are used for the manufacture of the preferred device.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1
is a preferred embodiment emitter device;
FIG. 2
is a preferred embodiment emitter device;
FIG. 3
is a preferred embodiment emitter device;
FIG. 4
is a preferred embodiment emitter device;
FIG. 5
is a single lens structure for a focusing array in a preferred embodiment emitter device of the invention;
FIG. 6
is a single lens and aperture structure for a focusing array in a preferred embodiment emitter device of the invention;
FIG. 7A
illustrates the general structural framework for constructing alternate preferred embodiment focusing array structures;
FIGS. 7B-7E
schematically illustrate exemplary focusing schemes for alternate embodiment focusing array structures;
FIG. 8
is a preferred embodiment lens and dual aperture focusing array structure;
FIG. 9
illustrates a preferred embodiment electrode lens structure for beam direction control;
FIGS. 10A and 10B
illustrate a preferred embodiment memory device of the invention;
FIG. 11
is a schematic top view of a preferred embodiment focusing array and micromover;
FIG. 12
is a schematic cross-section view of a preferred embodiment dual focusing array emitter device of the invention;
FIG. 13
is a schematic view of a preferred embodiment lithography device of the invention;
FIG. 14A
is a schematic view of a preferred embodiment display device of the invention;
FIG. 14B
is a schematic cross-section view of a preferred embodiment dual focusing array device structure, usable for the
FIG. 14A
display device;
FIG. 14C
is a schematic top view of a preferred focusing array for preferred embodiment beam movement control, usable for the
FIG. 14A
display device;
FIG. 15
is a preferred embodiment method of forming an emitter device.
DETAILED DESCRIPTION OF THE INVENTION
The present invention concerns an emitter device having a focusing array containing a plurality of focusing columns to focus electron emissions from one or more emitters onto a target medium. Relative movement between the target medium and the focused emissions allows each focusing column to focus emissions over an area of the target medium encompassing the movement range. The use of a separate focusing array according to the invention permits simplification of the structure of the emitter, provides the ability to increase the complexity of the focusing column (permitting better focus of the electron beam), reduces electrostatic interaction between the target medium (anode) and the emitter stack (cathode), and enables astigmatism correction of the electron beam and the ability to redirect the beam for either the illumination of different areas of the medium or for blanking of the electron beam. Additionally, the present invention offers flexibility to various devices by working with either single emitters or with arrays of emitters addressed as a group, permits the placement of integrated electronics and control onto a substrate carrying the focusing array, and allows for the operation of a continuous-on emitter or group of emitters.
In a preferred method of the invention, separate substrates are used for the formation of the emitter array and for the focusing array. In this manner, the separate focusing array permits the reducing of processing on sensitive emitter and media surfaces. When portions of a device are integrated, the emitter and media surfaces are exposed to minimal processing, for example, to bond a formed focusing array substrate to a separately formed emitter substrate. Most processing is conducted on non-sensitive surfaces, avoiding contamination of the media and the emitter substrates. Uniformity of the electron emission across a wide emitter or an array of emitters is then more easily obtainable than when the focusing structures are formed on the emitter substrate.
With a separate focusing array, the focusing array can provide the surfaces and area to facilitate integration for device electronics. The focusing array can itself become more complex due to less stringent requirements for surface processing and the increase in surface area on the focusing array substrate.
One of the features that may be introduced onto the focusing array substrate is the capability to reduce or eliminate pull-down forces resulting from the high voltage potential difference between the target medium and the emitters. The act of placing a focusing array between the emitters and the target medium itself reduces much of this pull-down interaction force between the two substrates, especially when the focusing array is built on a thick, i.e., at least 5-10 μm, dielectric material. By placing shielding on either surface of the focusing column, elimination of the pull-down force can be accomplished by ‘matching’ the potential of the surface that the shield faces (in the case of the emitter, a more negatively biased shield, in the case of the target medium, a more positive shield).
The focusing array may also be used to control the driving electronics for beam blanking, astigmatism correction and beam re-direction. The invention may be used with various types of emitters, including, for example, Spindt tip emitters or field emission arrays to achieve current density goals for a particular device application. It is preferable to avoid integration of features other than those necessary to stimulate emissions from the emitter substrate to enhance performance of the emitters; however, embodiments of the invention include use of the focusing array as a second lens with an emitter substrate lensing structure. Additional embodiments include multiple focusing arrays between the emitter and the target.
In a preferred embodiment, separate emitter, focusing array and target medium substrates are used. The focusing array substrate preferably includes integrated circuitry for device control. The focusing array may be moveable, or in a particularly preferred embodiment, is affixed to the emitter substrate, in which case either the target medium substrate is movable, or the beam is directed through circuitry and focusing located on the focusing array substrate.
The invention will now be illustrated with respect to preferred embodiment emitter devices and representative devices incorporating the preferred embodiment emitter devices. In describing the invention, particular exemplary devices, formation processes, and device applications will be used for purposes of illustration. Dimensions and illustrated devices may be exaggerated for purposes of illustration and understanding of the invention. A single emitter device illustrated in conventional fashion by a two-dimensional schematic layer structure will be understood by artisans to provide teaching of three-dimensional emitter device structures. Devices and processes of the invention may be carried out with conventional integrated circuit fabrication equipment, as will also be appreciated by artisans.
Referring now to
FIGS. 1-4
, preferred embodiment emitter devices
10
,
12
,
14
and
16
of the invention are shown in a two-dimensional schematic cross section. The embodiments are addressed together as they share common features labeled with like reference numerals. In the preferred embodiments, emissions from an emitter substrate
18
are focused by an electrostatic focusing array substrate
20
onto a target medium
22
. Relative movement between the target medium
22
and the focusing array substrate
20
permits each of a plurality of focusing columns
24
to focus electron emissions over an area of the target medium encompassed by the range of relative movement. In each of
FIGS. 1-4
, the focusing column represented is an exaggeration of each focusing column within an array of columns. In
FIGS. 1 and 2
, the focusing array substrate
20
is movable by a micromover (unshown), while in
FIGS. 3 and 4
, the target medium
22
is movable by a micromover
23
a
,
23
b
. Exemplary micromovers include, for example, springs, piezo, screw and comb micromover assemblies.
The separate focusing array substrate
20
of the invention is advantageous, whether it forms a movable rotor as in
FIGS. 1 and 2
, or is bonded through a bond
26
to the emitter substrate
18
as in
FIGS. 3 and 4
. It is desirable to have an emitter substrate that provides a uniform emission on one side of the emitter or emitter array when compared to the other side of the emitter or emitter array. This is facilitated by the separate focusing array substrate since there is no need to worry about apertures or lensing to be placed over the emitter substrate
18
. On-substrate formation of such structures can contaminate the sensitive emitter surfaces. Control of the emitters is also removed to the focusing array substrate
20
in accordance with preferred embodiments. The focusing array substrate
20
can be used to blank emitter signals, permitting the emitter or emitters to be pulsed or continuously on, and removing the need to provide circuitry to individually address the emitters. The focusing array substrate
20
has benefits separate from protection of emitter surfaces from processing. Specifically, for example, more sophisticated focusing is possible and emitter quality detection systems can be implemented. Accordingly, embodiments of the invention include emitter devices with emitters having traditional on substrate lensing and control combined with further focusing by a focusing array of the invention.
Micromover
23
a
,
23
b
, for example, includes a stator
23
a
that interacts with media
22
as a rotor. A movement range, e.g., ±50 μm, is permitted by control of an electric or magnetic field and limited by the force of springs
23
b
. In
FIGS. 1 and 2
the focusing array substrate
20
is the rotor, and it is preferred that the medium
22
is a stator providing electric and/or magnetic fields for interaction. Springs are preferably mounted to the focusing array substrate
20
on the sides of the substrate. However, the electric and/or magnetic fields to control the micromover when the focusing array substrate
20
is part of a movable rotor may be integrated either on the target medium
22
or on the emitter substrate
18
. Preferably, the micromover
23
a
,
23
b
and/or its rotor assembly is integrated with the target medium
22
.
The emitter substrate
18
may make use of various types of emitters, though flat emitters are generally shown in
FIGS. 1-4
. For example, in
FIG. 1
, a large flat emitter
28
(e.g., >40 μm×40 μm) is illustrated with the focusing column
24
being narrower and translating wide electron emissions from the flat emitter
28
into a focused beam. The flat emitter
28
might be, for example, a MIM (metal-insulator-metal), a MOS (metal-oxide-semiconductor), or a MIS (metal-insulator-semiconductor) emitter. A large spindt tip array, silicon nanotip array, or carbon film emitters are additional examples, and the sensitive tip structures would benefit from avoiding the processing necessary to integrate further structures onto a common substrate. Other emitters that may be used include thermionic emitters and Schottky emitters. An emitter can be chosen based upon performance parameters, e.g., amount of desired current, required stability of emissions, and emitter lifetime. The mode of operation may also affect selection for the type of emitter. In any of the
FIGS. 1-4
embodiments the emitter(s) can be run in many different modes, from continuous electron emission to pulsed emission. This gives control over any RC constant limitations and helps to improve emitter lifetime by selecting a mode that best suits the lifetime needs of the emission device. Also, the emitters do not have to be singly addressed and may be controlled as a group in either pulsed or continuous operation. In a preferred embodiment, the pulsed group control of the emitter substrate
18
is synchronized with the movements of the focusing array substrate
20
(in
FIGS. 1 and 2
) or the target medium
22
(FIGS.
3
and
4
).
In most applications, it is preferred that emitter substrate
18
remain simple. However, the invention may also be used with an emitter that has an integrated lens, and the focusing array substrate
20
would then provide additional refinement of the electron beam. Similarly, multiple focusing array substrates
20
may be used sequentially to achieve further refinement of the focused electron beams.
Alignment between the focusing array substrate
20
and the emitter substrate
18
is less stringent than required for the alignment of an integrated emitter/lens substrate. In each of
FIGS. 1 and 3
, focusing columns
24
are narrower than the emitters
28
, and a plurality of the focusing columns
24
divides emissions into a plurality of beams. In
FIGS. 2 and 4
, focusing columns encompass one or a plurality of emitters
28
arranged in an array, and focus received emissions.
The target medium
22
can be chosen to create different types of devices. The target medium
22
may be a memory medium with the use of phase change material, an exemplary material being In
2
Se
3
. Other phase change materials are known to those skilled in the art. A medium that produces visual emissions in response to electron emissions creates a display. For a lithography application, an electron beam resist material is suitable, e.g., polymethylmethacrylate (PMMA). Movements of the target medium
22
or the focusing array
20
are controlled according to the lithographic pattern desired. By pulsing of the emitters or the use of a blanking function on the focusing array substrate
20
, a lithographic pattern can be written through the PMMA or any other appropriate electron-beam resist and developed for the desired pattern. A plurality of focusing columns
24
can carry out a parallel lithography application to pattern multiple target mediums or areas of the same medium with a common pattern. Different patterns or variations in the same pattern are also possible, since focusing columns
24
, for example, may be individually controlled with certain columns providing the necessary focusing to achieve lithography and others blanking the electron emissions at the same time.
Blanking is but one possible operation of the focusing array substrate
20
. Focusing, as used herein, encompasses the range of possibilities including, for example, mere use of an aperture. With the focusing array substrate
20
being separate from the emitter substrate
18
, a range of lensing systems from simple apertures to a complex lensing system for better focusing of the electron beam can be implemented. Divergence control is relatively unimportant since in preferred embodiments, only focused electron beams pass through the lensing system of the focusing array substrate
20
, or a highly collimated beam passes through the lensing system. Divergence may be eliminated (controlled) either through the lensing system or with an aperture that can be built before, or through the length, of the lensing system.
The potential for integration of electronics on the focusing array substrate
20
provides additional functions. For example, current detection devices may be placed on the focusing array substrate
20
to follow the health and lifetime of the emitters
28
. A sensing device could be implemented to monitor thermal conditions and initiate pulsing (to cool down thermal buildup problems) or as a signal indicating that a given emitter array is failing and initiating precautions to ensure integrity of the data. Since the focusing array is formed as a thick substrate, reduction of attraction between the differential potentials of the emitter substrate
18
and the media substrate
22
occurs. A thick substrate refers to a substrate with minimum dielectric thickness from 5-10 μm. Dielectric thickness may range from the minimum up to hundreds of micrometers. A preferred example is a typical silicon wafer with a thickness 200, 475 or 625 μm. Furthermore, through strategic placement of shielding
25
on the focusing array substrate surfaces, elimination of pull-down forces can be obtained by matching the potential of shielding layers on the emitter substrate
20
to the potentials of the surface that it is facing. The shielding
25
(see
FIG. 1
) and the dielectric both act as a voltage barrier to reduce pull down. The shielding will be most effective. Some preferred embodiments of the focusing array will now be addressed.
FIG. 5
illustrates a simple embodiment for the focusing column
24
of the focusing array substrate
20
. The
FIG. 5
structure is a single lens structure, where the lens itself acts as an aperture. A wafer, e.g., a silicon or glass wafer
34
is feed-through etched to create a hole
36
. An electrode
38
forms an electrostatic lens that creates a field to focus electron emissions into a tight beam
39
that will create a spot on the target medium
22
. Suitable materials for the electrode
38
include refractive metals and conducting ceramics. In the
FIGS. 1-4
embodiments, for each focusing column
24
, an area of focus exists on the target medium due to the relative movement and positioning between the target medium
22
and the focusing column
24
. In
FIG. 5
, only the focusing column
24
is illustrated, while artisans will appreciate that the silicon wafer
34
or other suitable substrate provides the basis for integration of other devices and circuitry. In
FIG. 5
, the opening defined in the electrode
38
also acts as an aperture having the same width as the focusing column
24
. An operational variation is shown in
FIG. 6
, where the electrode
38
merely forms a reduced width aperture when no bias is applied to the electrode.
Referring now to
FIG. 7A
, an alternate preferred focusing array structure is illustrated as including three sections I, II and III, section I being closest to the emitter substrate
18
,
11
being closest to the medium
22
, and III being in the middle portion of the focusing column array substrate
20
. The overall structure of the
FIG. 7A
embodiment is based on FIG.
3
and uses like reference numerals. This convention of naming three separate sections is adopted not as a limitation of the preferred embodiment, but only as an aid to illustrating some preferred lensing structures for the focusing array substrate
20
. Functions for the different sections can be tailored to suit particular applications.
FIGS. 7B-7E
illustrate some preferred exemplary focusing functions that can be accomplished by using the general
FIG. 7A
structure to suit particular applications.
FIGS. 7B and 7C
illustrate a no-crossover scheme with one or two lenses, respectively.
FIG. 7D
illustrates a crossover scheme with two lenses. Finally,
FIG. 7E
illustrates a multiple crossover scheme with three lenses. The
FIG. 7E
structure can be realized by multiple focusing array structures according to the
FIG. 7A
structure.
FIG. 8
illustrates such a preferred structure for implementing more than one focusing array substrate
20
and utilizing all three sections as illustrated in FIG.
7
A. This schematic is used to illustrate the possible utilization of multiple focusing array substrates
20
and the use of various combinations of focusing elements within each focusing column.
The emitter substrate
18
contains an emitter
28
that may consist of a flat emitter or a tip emitter and may also consist of an array of emitters or just a large area type of emitter. The electrons emitted from the emitter
28
are preliminarily focused by the initial electrode
42
, which is preferably negatively biased (thus reducing the interaction between the target medium
22
and the emitter substrate
18
as well as providing focusing capability) and used as an initial focusing lens. At a crossover region
44
, an aperture
46
eliminates divergent or stray electrons from the beam. A dielectric material
48
is used between electrode
42
and aperture
46
, and between aperture
46
and a second (exit) electrode
50
to prevent shorting of the two materials as well as to prevent electrostatic interaction. The beam is focused into a second focusing column by the second electrode
50
.
The
FIG. 8
array may be implemented in one of at least two manners. The first implementation consists of the first focusing column as being defined by Region I as shown in
FIG. 7A
while the second focusing column is defined as being either Region II or Region III of FIG.
7
A. In this case, only one substrate is needed on which the focusing array substrate is formed. A second implementation consists of the first focusing column as one wafer, with electrode
42
being in Region I, the aperture
46
being in Region II, and the exit electrode
50
being in Region III. This is then bonded to a second wafer that is similar to the first wafer. The two wafer arrangement is shown in FIG.
8
. It should be obvious that many deviations from this structure are apparent, and that this illustration is only one representation of the many possible structures that may be implemented with a separate focusing lens structure.
To illustrate some examples representing deviations of the description already provided for
FIG. 8
, the following may be envisioned: the electrodes
42
may be used as a blanking mechanism to control the flow of electrons through the lensing system, or the electrode
50
may be used for direction control by using a lensing system such as that shown in FIG.
9
. What is important to recognize is that this invention may use multiple focusing techniques to produce highly collimated and focused electron emissions in a controlled manner to a desired region on the target medium
22
.
Direction focus, e.g., beam direction control, is available for creating a potential pattern using any of the electrode layers in the preferred embodiments. A preferred example electrode pattern is shown in FIG.
9
. An electrode layer around a focusing column is shown in
FIG. 9
as including four separate electrodes V
1
through V
4
. The number of electrodes or lens may be
4
,
6
or
8
. It should be obvious that the greater number of electrodes used, the greater the precision of beam control that can be demonstrated. Relative voltages in the electrodes/lens may be changed to adjust the point of focus of the emergent focused beam or to adjust the beam to correct for any astigmatism that may be associated with the beam. Controlled use of this effect can add to, or act as a substitute for, a limited range of relative motion between the focusing array substrate
20
and the target medium
22
. The electrode pattern is usable with any of the preferred embodiment focusing array structures.
A preferred memory device is shown in
FIGS. 10A and 10B
. The embodiment generally has the
FIG. 4
focusing array structure. The memory device includes a plurality of integrated emitters
60
on an emitter substrate
62
. In this exemplary embodiment, an integrated circuit (IC)
62
including one large field or a plurality of smaller integrated emitters
60
is bonded by a bond
64
to a focusing array substrate
66
having focusing columns
68
. Each focusing column
68
can controllably emit a focused beam
70
that is used to affect a recording surface, namely medium
72
. Medium
72
is applied to a mover
74
that positions the medium
72
with respect to the focusing columns
68
of the focusing array substrate
66
. Preferably, the mover
74
has a reader circuit
76
integrated within. The reader
76
is shown as an amplifier
78
making a first ohmic contact
80
to medium
72
and a second ohmic contact
82
to mover
74
, preferably a semiconductor or conductor substrate. The mover
74
is a rotor substrate that interacts with a stator substrate
83
, which contains opposing electrodes (in regard to corresponding electrodes on the mover substrate
74
) for positioning the mover substrate
74
relative to the stator
83
. When a focused beam
70
strikes the medium
72
, if the current density of the focused beam is high enough, the medium
72
is phase-changed to create an affected medium area
84
. When a low current density focused beam
70
is applied to the medium
72
surface, different rates of current flow are detected by amplifier
78
to create reader output. Thus, by affecting the medium
72
with the energy from the emitter
60
, information is stored in the medium using structural phase changed properties of the medium. An exemplary phase change material is In
2
Se
3
. A preferred lithography device has the same general structure as in
FIG. 10A
, but omits the reader circuit and replaces the phase change material with a wafer or wafers prepared for lithographic patterning.
FIG. 11
shows an alternate preferred focusing array
66
, which may be used in
FIG. 10A
to create an embodiment where the focusing array
66
is movable instead of the medium
72
. Columns
68
are aligned over an emitter array
60
. Alignment with respect to emitter array
60
and a target medium is achieved by the movers
74
. This same basic arrangement is useful, for example, for e-beam lithography and displays. The size of the emitter array
60
focusing array
66
and medium
72
is limited by applications only. A single focusing array
66
might align over a single wafer or a portion thereof. An exemplary
2
″ focusing array
66
might be positioned over a targeted medium wafer
72
.
FIG. 12
is a cross-section schematic view of a preferred dual focusing array emitter device of the invention. Two focusing arrays
20
are bonded to each other and the emitter chip
18
through the bonds
26
. The micromover
74
can create relative movement of the emitter chip/focusing array structure relative to the target medium
22
. Focusing array chips
20
may have the
FIG. 8
dual lens arrangement. Alternatively, any arrangement of magnetic and electrostatic functions, examples including without limitation, collimation, focus, blanking, selection, modulation, beam direction control, beam limitation (as through an aperture), and/or signal detection, is possible. The
FIG. 12
structure is generally applicable to any type of device, including the aforementioned displays, memories and lithography devices. The
FIG. 12
structure represents a variant of the
FIGS. 3 and 4
embodiments. The focusing arrays
20
are bonded together with bonds
26
and bonded to an emitter chip
18
. In this case, the emitter chip
18
and focusing arrays together form a rotor and the target medium
22
a stator. Micromover
74
is applied to the emitter chip, with springs
23
b
being integrated, for example, through the back of the emitter chip
18
.
FIG. 13
illustrates an exemplary lithography arrangement, in which a plurality of bonded emitter chips and focusing arrays form e-beam generator arrays
80
, and a wafer
82
is acted on as the target medium. Each e-beam generator array
80
has on it micromovers or nanomanipulators to position the array of beams over the correct area of the wafer
82
. The wafer
82
can then be positioned underneath the arrays
80
to permit several patterns to be written. An alternative is to make emitter arrays large enough to each act on something as large as a full wafer to conduct full
6
″ (or larger) processing of the wafer underneath it. Another example is the use of multiple arrays having common movements to process a number of wafers in parallel, writing the same pattern to each wafer.
FIGS. 14A-C
illustrate an exemplary display device. Referring to
FIG. 14A
, display generating electron beams
84
are produced by an emitter device
86
of the invention. The emitter device
86
, for example, includes a plurality of bonded emitter chips and focusing array chips. Individual electron beams selectively emanate from each focusing column embodied in the emitter device
86
. The electron beams
84
may be individually modulated by each focusing array column within the emitter device
86
to strike a display medium
88
. The display medium
88
may include pixels
90
of different color display media, e.g., colored phosphor materials. A plurality of pixels is included within a movement range of each electron beam to permit each electron beam
84
to strike one of the different colors within its range of operation on the display medium
88
. This produces a visible image in the desired colors. Each focusing array column may then be individually addressed to display the necessary images. Because this process uses individually addressed emitters, display updates are very rapid.
The movement range for an individual electron beam in the display embodiment may be small, and speed can be enhanced by limiting beam movement to a beam direction control method. In addition, it is beneficial to avoid moving parts in displays.
FIGS. 14B and 14C
illustrate a preferred structure to achieve a range of positions for each electron beam
84
without resort to a micromover or nanomanipulators.
In
FIG. 14B
, two focusing arrays
20
are bonded to each other, to the emitter chip
18
and to the display medium
88
by bonds
26
. The focusing array
20
closest to the display medium
88
is preferably constructed so that each focusing column
24
in the array has a multiple electrode lens, a.k.a. beam direction control, in accordance with
FIG. 9
to achieve directional control of the beam. This has been discussed with respect to FIG.
9
. In the preferred embodiment, shown in
FIG. 14C
, each focusing column
24
includes eight electrodes
90
. Application of different voltages to the electrodes
90
around a focusing column
24
change the direction of an electron beam. Preferably, a balanced voltage condition has a beam emitting from the center of a focusing column
24
. The change in position of a beam, and the resultant display effect is as rapid as the change in voltage of electrodes around a focusing column. Pulsation of the emitters
28
may set a display rate. A blanking effect, used by the focusing array furthest from the display medium, may be used for rapid turn-on or turn-off of a particular pixel. Modulation or directional control of the beam may also be used for variation in the brightness of a particular display pixel. Artisans will appreciate that a full range of other effects are made possible as well.
FIG. 15
illustrates a preferred embodiment formation method of the invention. Concepts and advantages discussed with respect to the various devices and structures discussed above are applicable to the method. Broadly, a formation method of the invention involves the separate formation of a focusing array and emitter with subsequent arrangement of the two elements. This reduces processing on the sensitive emitter surfaces. Referring to
FIG. 15
, a particular embodiment of the method of the present invention begins with forming one or more emitters on the first substrate (step
100
). A focusing array including one or more focusing columns is then formed (step
102
) on a second substrate. Preferably, a target medium is formed on a third substrate (step
104
). After the separate formations, the emitter, focusing array and medium substrates are then arranged (step
106
), for example, by bonding, such that the focusing array focuses emissions from the one or more emitters through the focusing columns onto the target medium.
While a specific embodiment of the present invention has been shown and described, it should be understood that other modifications, substitutions and alternatives are apparent to one of ordinary skill in the art. Such modifications, substitutions and alternatives can be made without departing from the spirit and scope of the invention, which should be determined from the appended claims.
Various features of the invention are set forth in the appended claims.
Claims
- 1. An emitter device comprising:one or more emitters an electrostatic focusing array including a plurality of focusing columns for focusing emissions from said one or more emitters into a plurality of focused beams; a target medium for receiving said focused beams, wherein one of said target medium and said electrostatic focusing array can create controlled relative movement between said target medium arid one or more of said plurality of focused beams; and wherein said electrostatic focusing array is movable with respect to said target medium and said one or more emitters.
- 2. The emitter device of claim 1, wherein said one or more emitters comprises one or more emitters having an emission area encompassing multiple ones of said plurality of focusing columns.
- 3. The emitter device of claim 1, wherein said one or more emitters comprises an array of emitters and each of said plurality of focusing columns encompasses multiple ones of said array of emitters.4.The emitter device of claim 1, wherein said electrostatic focusing array comprises a voltage barrier to create a low voltage potential between said target medium and said electrostatic focusing array.
- 5. The emitter device of claim 1, wherein said array comprises electrodes disposed around one or more of said focusing columns so that application of voltage to said electrodes can directionally control a focused beam.
- 6. The emitter device of claim 5, wherein said electrostatic focusing array comprises:beam entry and exit sections each having at least one of an aperture, a single lens, a double lens, an aperture and lens structure, and a beam direction control; and a crossover section between said beam entry and exit sections, said crossover section having at least one of a collimation aperture and a beam direction control.
- 7. The emitter device of claim 6, wherein said electrostatic focusing array comprises a voltage barrier to create a low voltage potential between said target medium and said electrostatic focusing array.
- 8. The emitter device of claim 6, wherein said beam direction control comprises electrodes arranged symmetrically around circumferences of said plurality of focusing columns.
- 9. The emitter device of claim 1, wherein said one or more emitters comprises one or more emitters having an emission area encompassing multiple ones of said plurality of focusing columns.
- 10. The emitter device of claim 1, wherein said one or more emitters comprises an array of emitters and each of said plurality of focusing columns encompasses multiple ones of said array of emitters.
- 11. The emitter device of claim 1, wherein said electrostatic focusing array comprises a dielectric barrier to create a low voltage potential between said electrostatic lens and other portions of said electrostatic focusing array.
- 12. The emitter device of claim 1, wherein said electrostatic focusing array comprises one or more of a lens and an aperture.
- 13. The emitter device of claim 12, wherein said electrostatic focusing array comprises a beam direction control.
- 14. The emitter device of claim 13, wherein said electrostatic focusing array comprises:beam entry and exit sections each having at least one of an aperture, a single lens, a double lens, an aperture and lens structure, and a beam direction control; and a crossover section between said beam entry and exit sections, said crossover section having at least one of a collimation aperture and a beam direction control.
- 15. The emitter device of claim 14, wherein said electrostatic focusing array comprises a dielectric barrier to prevent interaction between different sections of said focusing array.
- 16. The emitter device of claim 15, wherein said beam direction control comprises electrodes arranged symmetrically around circumferences of said plurality of focusing columns.
- 17. The emitter device of claim 1, wherein said target medium comprises a memory medium.
- 18. The emitter device of claim 1, wherein said target medium comprises one or more wafers and the emitter device is an e-beam lithography device.
- 19. An emitter device comprising:an emitter substrate including one or more emitters controlled as a group; an electrostatic focusing substrate including a plurality of focusing columns for focusing emissions from said one or more emitters into a plurality of focused beams; a target medium substrate for receiving said focused; and a mover for positioning said focused beams upon said target medium substrate, said emitter substrate and said target medium substrate being stator substrates and said electrostatic focusing substrate is a movable substrate responsive to said mover.
- 20. The emitter device of claim 19, wherein said target medium comprises a memory medium.
- 21. The emitter device of claim 19, wherein said target medium comprises a plurality of wafers and the emitter device is an e-beam lithography device.
- 22. The emitter device of claim 19, wherein said target medium comprises a display medium and the emitter device is a display device.
- 23. The emitter device of claim 19, further comprising electrodes in said focusing array for beam direction control.
- 24. The emitter device of claim 23, wherein said target medium comprises a plurality of wafers and the emitter device is an e-beam lithography device.
- 25. The emitter device of claim 23, wherein said target medium comprises a memory medium.
- 26. The emitter device of claim 23, wherein said target medium comprises a display medium and the emitter device is a display device.
- 27. The emitter device of claim 26, whereinsaid display medium comprises a plurality of pixels and an effect is generated in a pixel when one of said plurality of focused beams Impinges upon the pixel; each of said plurality of focused beams has its direction controlled over multiple ones of said plurality of pixels.
- 28. The emitter device of claim 27, wherein said multiple ones of said plurality of pixels comprise different color pixels.
- 29. A memory device, comprising:a first substrate; one or more emitters on the first substrate; a second substrate discrete from and positioned adjacent to the first substrate; an array of focusing columns on the second substrate adjacent to the one or more emitters on the first substrate; a third substrate discrete from the first and second substrates and positioned adjacent to the second substrate opposite the first substrate; a memory medium on the third substrate; and a micromover coupled to the second substrate, the micromover operable to move the second substrate relative to first substrate or the third substrate or both.
- 30. A memory device, comprising:a first substrate; one or more emitters on the first substrate; a second substrate discrete from and positioned adjacent to the first substrate; an array of focusing columns on the second substrate adjacent to the one or more emitters on the first substrate; a third substrate discrete from the first and second substrates end positioned adjacent to the second substrate opposite the first substrate; a memory medium on the third substrate; and wherein one or both of the first substrate and the third substrate are configured as a stator and the second substrate is configured as a rotor movable relative to one or both of the first substrate and the second substrate.
US Referenced Citations (11)
Foreign Referenced Citations (1)
Number |
Date |
Country |
WO 9848443 |
Oct 1998 |
WO |