Claims
- 1. A method of etching aperture masks for cathode ray tubes comprising the steps of:
- forming a layer of compressible emulsion on a support plate;
- selectively developing the layer of compressible emulsion to produce a fractureable opaque pattern that projects outward from the layer of compressible emulsion;
- placing spacers on top of said fractureable opaque pattern and on top of said compressible emulsion that does not have the fractureable opaque pattern;
- placing the spacers against a layer of etchant resist located over a material to be etched;
- evacuating the air from between the compressible emulsion and the etchant resist;
- then developing the etchant resist so that the material not covered by the etchant resist can be etched; and
- then etching the material with the etchant resist to produce an aperture mask.
- 2. The method of claim 1 wherein said fractureable opaque pattern comprises projections formed to a distance of about one micron above said layer of compressible emulsion.
- 3. The method of claim 1 wherein said spacers are placed in substantially uniform spacing over said compressible emulsion.
- 4. The method of claim 1 wherein no spacers are placed on a strip line on said compressible emulsion.
- 5. A method of etching comprising the steps of:
- forming a layer of compressible emulsion with a top surface on a support plate;
- selectively developing the layer of compressible emulsion to produce a fractureable opaque pattern that projects outward from the top surface of the compressible emulsion;
- placing one end of a plurality of spacers on top of the fractureable opaque pattern;
- placing the other end of the plurality of spacers against a layer of etchant resist located over a material to be etched to thereby increase the distance between the top surface of the compressible emulsion layer and the layer of etchant resist;
- evacuating the air from between the compressible emulsion and the etchant resist;
- then developing the etchant resist so that the material not covered by the etchant resist can be etched; and
- then etching the material with the etchant resist to produce an etched article.
- 6. The method of claim 5 wherein second spacers are placed entirely on top of said compressible emulsion.
- 7. The method of claim 5 including covering said spacers and said compressible emulsion layer with a silicone layer to prevent dirt particles from adhering to said compressible emulsion layer during use and reuse of said compressible emulsion layer.
- 8. The method of claim 5 including placing said spacers substantially uniformly over said top surface of said compressible emulsion.
- 9. The method of claim 5 including placing at least some of said spacers partially on said top surface of said compressible emulsion and partially on top of said fractureable opaque master pattern.
- 10. The method of claim 5 including forming said spacers to extend approximately 3 microns above said top surface of said compressible emulsion to thereby define air evacuation channels between said spacers.
- 11. The method of claim 5 including forming said compressible emulsion about 3 microns thick.
- 12. The method of claim 5 including forming said spacers to extend about a minimum of 2 microns above said top surface of said compressible emulsion.
- 13. The method of claim 5 including positioning said spacers in a regular pattern throughout the layer of compressible emulsion.
Parent Case Info
This application is a division of application Ser. No. 07/363,911, filed Jun. 9, 1989, now U.S. Pat. No. 5,149,608.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4664996 |
Mascony et al. |
May 1987 |
|
4669871 |
Wetzel et al. |
Jun 1987 |
|
Divisions (1)
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Number |
Date |
Country |
Parent |
363911 |
Jun 1989 |
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