Claims
- 1. A method of preparing an oxide film, said method comprising: providing a nickel substrate material having a surface; placing a nitride composition layer on said substrate surface, said nitride composition selected from the group consisting of transition and rare earth metal compounds and combinations thereof; and oxidizing said nitride composition.
- 2. The method of claim 1 wherein said nitride composition is annealed under oxidizing conditions.
- 3. The method of claim 2 wherein said conversion is at a time and temperature sufficient to provide complete oxidation of said nitride layer.
- 4. The method of claim 2 where said conversion is under oxygen partial pressures of less than about 10−6 atmosphere.
- 5. The method of claim 1 wherein at least one of water, ozone, peroxide, or metal-organic oxygen sources are used to oxidize said nitride composition.
- 6. The method of claim 1 wherein said nitride composition is oxidized in situ after deposition on said substrate.
- 7. The method of claim 1 wherein said nitride composition is zirconium nitride further including a molar percentage of yttrium nitride.
- 8. The method of claim 1 wherein said substrate has a plurality of nitride layers thereon and at least one said layer is oxidized.
- 9. The method of claim 8 wherein at least one said nitride layer is oxidized in situ after deposition on said substrate, and another nitride layer is oxidized ex situ.
- 10. The method of claim 1 wherein said nitride is a zirconium nitride composition.
- 11. The method of claim 10 wherein said nitride composition further includes a solute.
- 12. The method of claim 11 wherein said nitride composition is oxidized ex situ to provide a first oxide film.
- 13. The method of claim 12, further including direct deposition of a second oxide film on said first oxide film.
- 14. The method of claim 1 wherein said nitride composition layer is placed on said substrate over a temperature range.
- 15. The method of claim 1 wherein said substrate material comprises a nickel alloy.
- 16. The method of claim 15 wherein said substrate material is a nickel-chromium alloy.
- 17. A composite comprising a metal oxide layer on a metal substrate, said oxide layer having a substantially cubic crystalline structure and a substantially single epitaxial orientation, said oxide layer substantially without a nitride component, said oxide layer obtainable from the oxidation of a metal nitride composition deposited on said substrate.
- 18. The composite of claim 17 wherein said metal oxide is stabilized with a solute.
- 19. The composite of claim 17 wherein said metal oxide is a yttria stabilized zirconia.
- 20. The composite of claim 17 wherein said metal substrate is a nickel alloy.
- 21. The composite of claim 20 wherein said metal substrate is a nickel-chromium alloy.
- 22. An integrated device comprising a composite structure, said structure having a substrate, at least one epitaxial nitride composition deposited on said substrate, said nitride composition partially oxidized, and an electromagnetic film on said composition.
- 23. The device of claim 22 wherein said partially oxidized nitride composition is the reaction product of a yttrium zirconium nitride and an oxidizing agent.
- 24. The device of claim 22 further including an oxide layer on said partially oxidized nitride composition.
- 25. The device of claim 22 wherein said substrate comprises a nickel alloy.
- 26. The device of claim 25 wherein said substrate is a nickel-chromium alloy.
- 27. A configured composite comprising a substrate and at least one nitride layer thereon, each said nitride layer having a substantially cubic crystalline structure and substantially a crystalline lattice match with at least one of said substrate and another nitride layer, said composite absent a separate metal oxide layer, said composite arranged about an axis perpendicular to said configuration.
- 28. The configured composite of claim 27 further including a spool with said composite coiled about said spool.
- 29. The configured composite of claim 27 wherein one said nitride layer is a zirconium nitride composition.
- 30. The composite of claim 27 wherein said substrate is a nickel alloy.
- 31. The composite of claim 30 wherein said substrate is a nickel-chromium alloy.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation-in-part of application Ser. No. 09/687,940 filed on Oct. 13, 2000 and claims priority benefit therefrom.
[0002] The following relate to the present invention and are hereby incorporated by reference in their entirety: U.S. Pat. No. 5,739,086 Structures Having Enhanced Biaxial Texture and Method of Fabricating Same by Goyal et al., issued Apr. 14, 1998; U.S. Pat. No. 5,741,377 Structures Having Enhanced Biaxial Texture and Method of Fabricating Same by Goyal et al., issued Apr. 21, 1998; U.S. Pat. No. 5,898,020 Structures Having Biaxial Texture and Method of Fabricating Same by Goyal et al., issued Apr. 27, 1999; U.S. Pat. No. 5,958,599 Structures Having Enhanced Biaxial Texture by Goyal et al., issued Sep. 28, 1999; U.S. Pat. No. 5,964,966 Method of Forming Biaxially Textured Substrates and Devices Thereon by Goyal et al., issued Oct. 21, 1999; and U.S. Pat. No. 5,968,877; High Tc YBCO Superconductor Deposited on Biaxially Textured Ni Substrate by Budai et al., issued Oct. 19, 1999,; U.S. Pat. No. 4,428,811 Rapid rate reactive sputtering of a group IVb metal by Sproul et al., issued Jan. 31, 1984;
Government Interests
[0003] The United States Government has certain rights to this invention pursuant to Contract No. F33615.99.C.2967 awarded by the Department of Defense.
Divisions (1)
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Number |
Date |
Country |
Parent |
09931588 |
Aug 2001 |
US |
Child |
10704840 |
Nov 2003 |
US |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09687940 |
Oct 2000 |
US |
Child |
09931588 |
Aug 2001 |
US |