Nitrides

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CPC
C30B29/38

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Current Industry

C30B29/38Nitrides

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Quantitative textured polycrystalline coatings
- Patent number 12,163,248
- Issue date Dec 10, 2024
- Kennametal Inc.
- Zhenyu Liu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Boron nitride layer, apparatus including the same, and method of fa...
- Patent number 12,139,814
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Changseok Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing nitride catalyst
- Patent number 12,077,873
- Issue date Sep 3, 2024
- Industrial Technology Research Institute
- Kuo-Hsin Lin
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Vapor phase epitaxial growth device
- Patent number 12,009,206
- Issue date Jun 11, 2024
- National University Corporation Nagoya University
- Shugo Nitta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor substrate, method for manufacturing nitride s...
- Patent number 11,970,784
- Issue date Apr 30, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor substrate, laminate, substrate selection prog...
- Patent number 11,967,617
- Issue date Apr 23, 2024
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for producing AlN whiskers, AlN whisker bodies...
- Patent number 11,939,267
- Issue date Mar 26, 2024
- National University Corporation Nagoya University
- Toru Ujihara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a group III compound crystal by hydride vapor...
- Patent number 11,932,936
- Issue date Mar 19, 2024
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro Kubota
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for crystal growth by replacing a sublimated target source...
- Patent number 11,926,922
- Issue date Mar 12, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Conductive C-plane GaN substrate
- Patent number 11,810,782
- Issue date Nov 7, 2023
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride-based sintered compact and method for manufacturing...
- Patent number 11,802,049
- Issue date Oct 31, 2023
- Tosoh Corporation
- Masami Mesuda
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Pressure container for crystal production
- Patent number 11,746,439
- Issue date Sep 5, 2023
- JAPAN STEEL WORKS M&E, INC.
- Kouhei Kurimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride crystal substrate and method for manufacturing the same
- Patent number 11,732,380
- Issue date Aug 22, 2023
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal, group III nitride substrate, and method...
- Patent number 11,713,516
- Issue date Aug 1, 2023
- Panasonic Holdings Corporation
- Yusuke Mori
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Crystal laminate, semiconductor device and method for manufacturing...
- Patent number 11,640,906
- Issue date May 2, 2023
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- C30 - CRYSTAL GROWTH
Information Patent Grant
Boron nitride layer, apparatus including the same, and method of fa...
- Patent number 11,624,127
- Issue date Apr 11, 2023
- Samsung Electronics Co., Ltd.
- Changseok Lee
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal, group III nitride substrate, and method...
- Patent number 11,624,128
- Issue date Apr 11, 2023
- Panasonic Holdings Corporation
- Yusuke Mori
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Vapor phase epitaxial growth device
- Patent number 11,591,717
- Issue date Feb 28, 2023
- National University Corporation Nagoya University
- Shugo Nitta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
- Patent number 11,591,715
- Issue date Feb 28, 2023
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor template and nitride semiconductor device
- Patent number 11,574,809
- Issue date Feb 7, 2023
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compound semiconductor substrate comprising a SiC layer
- Patent number 11,476,115
- Issue date Oct 18, 2022
- Air Water Inc.
- Mitsuhisa Narukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group 13 (III) nitride thick layer formed on an underlying layer ha...
- Patent number 11,473,212
- Issue date Oct 18, 2022
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN fil...
- Patent number 11,443,942
- Issue date Sep 13, 2022
- The Government of the United States of America, as represented by the Secreta...
- Neeraj Nepal
- C30 - CRYSTAL GROWTH
Information Patent Grant
Two-dimensional, ordered, double transition metals carbides having...
- Patent number 11,411,218
- Issue date Aug 9, 2022
- Drexel University
- Michel W. Barsoum
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for growing GaN crystal and c-plane GaN substrate
- Patent number 11,404,268
- Issue date Aug 2, 2022
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Aluminum nitride plate
- Patent number 11,383,981
- Issue date Jul 12, 2022
- NGK Insulators, Ltd.
- Yoshimasa Kobayashi
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for producing GaN crystal
- Patent number 11,371,140
- Issue date Jun 28, 2022
- Mitsubishi Chemical Corporation
- Kenji Iso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for producing AlN whiskers, AlN whisker bodies...
- Patent number 11,345,640
- Issue date May 31, 2022
- National University Corporation Nagoya University
- Toru Ujihara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride crystal substrate, semiconductor laminate, method of manufa...
- Patent number 11,339,500
- Issue date May 24, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa Horikiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite nitride-based film structure and method for manufacturing...
- Patent number 11,280,027
- Issue date Mar 22, 2022
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Takahide Hirasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
GAN SUBSTRATE
- Publication number 20240413209
- Publication date Dec 12, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
GAN EPITAXIAL SUBSTRATE
- Publication number 20240413210
- Publication date Dec 12, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379352
- Publication date Nov 14, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
SEED SUBSTRATE FOR NITRIDE CRYSTAL GROWTH, PRODUCTION METHOD FOR NI...
- Publication number 20240271320
- Publication date Aug 15, 2024
- Sumitomo Chemical Company, Limited
- Masafumi YOKOYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS AND APPARATUSES FOR CRYSTAL GROWTH
- Publication number 20240209543
- Publication date Jun 27, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
Tantalum Nitride Doped With One Or More Metals, A Catalyst, Methods...
- Publication number 20240200228
- Publication date Jun 20, 2024
- Global Advanced Metals USA, Inc.
- Kazunari DOMEN
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING ALN WHISKERS
- Publication number 20240190776
- Publication date Jun 13, 2024
- National University Corporation Nagoya University
- Toru Ujihara
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD AND MANUFACTURING APP...
- Publication number 20240191391
- Publication date Jun 13, 2024
- KYOCERA CORPORATION
- Toshihiro KOBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
ALPHA GALLIUM OXIDE THIN-FILM STRUCTURE HAVING HIGH CONDUCTIVITY OB...
- Publication number 20240158953
- Publication date May 16, 2024
- KOREA INSTITUTE OF CERAMIC ENGINEERING AND TECHNOLOGY
- Dae-Woo JEON
- C30 - CRYSTAL GROWTH
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20240105449
- Publication date Mar 28, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
GA2O3-BASED SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING GA...
- Publication number 20240011192
- Publication date Jan 11, 2024
- ORBRAY CO., LTD.
- Kengo NISHIGUCHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SILICON CHANNEL GROWTH
- Publication number 20230413569
- Publication date Dec 21, 2023
- Applied Materials, Inc.
- Hsiang Yu Lee
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SILICON CHANNEL GROWTH
- Publication number 20230380170
- Publication date Nov 23, 2023
- Applied Materials, Inc.
- Hsiang Yu Lee
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE STRUCTURE OF CERAMIC SUBSTRATE
- Publication number 20230318212
- Publication date Oct 5, 2023
- Princo Corp.
- Pei-Liang CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FA...
- Publication number 20230272554
- Publication date Aug 31, 2023
- Samsung Electronics Co., Ltd.
- Changseok LEE
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER GROWTH METHOD, NITRIDE SEMIC...
- Publication number 20230250555
- Publication date Aug 10, 2023
- NGK Insulators, Ltd.
- Yoshitaka KURAOKA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS OF FORMING SINGLE CRYSTAL PIEZOELECTRIC LAYERS USING LOW TE...
- Publication number 20230246618
- Publication date Aug 3, 2023
- Akoustis, Inc.
- Craig Moe
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, AND SE...
- Publication number 20230215969
- Publication date Jul 6, 2023
- NGK Insulators, Ltd.
- Masahiro SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VAPOR PHASE EPITAXIAL GROWTH DEVICE
- Publication number 20230193512
- Publication date Jun 22, 2023
- National University Corporation Nagoya University
- Shugo NITTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming Nanotwinned Regions in a Ceramic Coating at a Tunable Volum...
- Publication number 20230015174
- Publication date Jan 19, 2023
- UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING
- Xiaolu Pang
- C01 - INORGANIC CHEMISTRY
Information Patent Application
GROUP III NITRIDE CRYSTAL MANUFACTURING APPARATUS AND MANUFACTURING...
- Publication number 20220341056
- Publication date Oct 27, 2022
- Panasonic Holdings Corporation
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
AlN MONOCRYSTAL PLATE
- Publication number 20220328723
- Publication date Oct 13, 2022
- NGK Insulators, Ltd.
- Hirohisa OGAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III COMPOUND SUBSTRATE PRODUCTION METHOD AND SUBSTRATE PRODUC...
- Publication number 20220267897
- Publication date Aug 25, 2022
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS AND COMPOSITIONS FOR RNA-DIRECTED TARGET DNA MODIFICATION A...
- Publication number 20220267928
- Publication date Aug 25, 2022
- The Regents of the University of California
- Jennifer A. Doudna
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING ALN WHISKERS , ALN WHISKER BODIE...
- Publication number 20220259108
- Publication date Aug 18, 2022
- National University Corporation Nagoya University
- Toru UJIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE CRYSTAL, SEMICONDUCTOR LAMINATE, AND METHOD FOR MANUFACTURI...
- Publication number 20220259765
- Publication date Aug 18, 2022
- SCIOCS Company Limited
- Hajime FUJIKURA
- C30 - CRYSTAL GROWTH
Information Patent Application
QUANTITATIVE TEXTURED POLYCRYSTALLINE COATINGS
- Publication number 20220235487
- Publication date Jul 28, 2022
- Kennametal Inc.
- Zhenyu LIU
- C30 - CRYSTAL GROWTH
Information Patent Application
Two-Dimensional, Ordered, Double Transition Metals Carbides Having...
- Publication number 20220231294
- Publication date Jul 21, 2022
- Drexel University
- Michel W. BARSOUM
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, AND SE...
- Publication number 20220199854
- Publication date Jun 23, 2022
- NGK Insulators, Ltd.
- Masahiro SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE-BASED SINTERED COMPACT AND METHOD FOR MANUFACTURING...
- Publication number 20220153582
- Publication date May 19, 2022
- TOSOH CORPORATION
- Masami MESUDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Quantitative textured polycrystalline coatings

Boron nitride layer, apparatus including the same, and method of fa...

Method for manufacturing nitride catalyst

Vapor phase epitaxial growth device

Nitride semiconductor substrate, method for manufacturing nitride s...

Nitride semiconductor substrate, laminate, substrate selection prog...

Method and apparatus for producing AlN whiskers, AlN whisker bodies...

Method for producing a group III compound crystal by hydride vapor...

Methods for crystal growth by replacing a sublimated target source...

Conductive C-plane GaN substrate

Gallium nitride-based sintered compact and method for manufacturing...

Pressure container for crystal production

Nitride crystal substrate and method for manufacturing the same

Group III nitride crystal, group III nitride substrate, and method...

Crystal laminate, semiconductor device and method for manufacturing...

Boron nitride layer, apparatus including the same, and method of fa...

Group III nitride crystal, group III nitride substrate, and method...

Vapor phase epitaxial growth device

GaN single crystal and method for manufacturing GaN single crystal

Nitride semiconductor template and nitride semiconductor device

Compound semiconductor substrate comprising a SiC layer

Group 13 (III) nitride thick layer formed on an underlying layer ha...

Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN fil...

Two-dimensional, ordered, double transition metals carbides having...

Method for growing GaN crystal and c-plane GaN substrate

Aluminum nitride plate

Method for producing GaN crystal

Method and apparatus for producing AlN whiskers, AlN whisker bodies...

Nitride crystal substrate, semiconductor laminate, method of manufa...

Composite nitride-based film structure and method for manufacturing...

Patents Applicationslast 30 patents

GAN SUBSTRATE

GAN EPITAXIAL SUBSTRATE

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

SEED SUBSTRATE FOR NITRIDE CRYSTAL GROWTH, PRODUCTION METHOD FOR NI...

METHODS AND APPARATUSES FOR CRYSTAL GROWTH

Tantalum Nitride Doped With One Or More Metals, A Catalyst, Methods...

APPARATUS FOR PRODUCING ALN WHISKERS

SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD AND MANUFACTURING APP...

ALPHA GALLIUM OXIDE THIN-FILM STRUCTURE HAVING HIGH CONDUCTIVITY OB...

CONDUCTIVE C-PLANE GaN SUBSTRATE

GA2O3-BASED SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING GA...

EPITAXIAL SILICON CHANNEL GROWTH

EPITAXIAL SILICON CHANNEL GROWTH

COMPOSITE STRUCTURE OF CERAMIC SUBSTRATE

BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FA...

GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER GROWTH METHOD, NITRIDE SEMIC...

METHODS OF FORMING SINGLE CRYSTAL PIEZOELECTRIC LAYERS USING LOW TE...

METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, AND SE...

VAPOR PHASE EPITAXIAL GROWTH DEVICE

Forming Nanotwinned Regions in a Ceramic Coating at a Tunable Volum...

GROUP III NITRIDE CRYSTAL MANUFACTURING APPARATUS AND MANUFACTURING...

AlN MONOCRYSTAL PLATE

GROUP III COMPOUND SUBSTRATE PRODUCTION METHOD AND SUBSTRATE PRODUC...

METHODS AND COMPOSITIONS FOR RNA-DIRECTED TARGET DNA MODIFICATION A...

METHOD AND APPARATUS FOR PRODUCING ALN WHISKERS , ALN WHISKER BODIE...

NITRIDE CRYSTAL, SEMICONDUCTOR LAMINATE, AND METHOD FOR MANUFACTURI...

QUANTITATIVE TEXTURED POLYCRYSTALLINE COATINGS

Two-Dimensional, Ordered, Double Transition Metals Carbides Having...

METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, AND SE...

GALLIUM NITRIDE-BASED SINTERED COMPACT AND METHOD FOR MANUFACTURING...