Claims
- 1. An epoxy resin composition for semiconductor encapsulation comprising an epoxy resin, a curing agent, an inorganic filler, a catalyst, a flame retardant and an additive, wherein the resin composition is obtained by employing the epoxy resin mainly containing an epoxy resin having biphenyl structure, the curing agent mainly containing a phenolic aralkyl resin, a polysiloxane compound modified with polyether containing an amino group as the flame retardant, a polyimide resin as the additive, wherein both end groups of the polyimide resin are modified with an epoxy resin or a phenolic resin, and not less than 87% by weight of the inorganic filler based on the total composition.
- 2. The epoxy resin composition of claim 1, wherein 0.5 to 30 parts by weight of the polyimide resin as an additive is mixed based on total 100 parts by weight of the epoxy resin and the curing agent.
- 3. The epoxy resin composition of claim 1, wherein fused silica having not more than 75 μm of maximum diameter is employed as the inorganic filler.
- 4. The epoxy resin composition of claim 1, wherein a phosphorus catalyst or a latent phosphorus catalyst is employed as the catalyst.
- 5. A semiconductor device encapsulated by an epoxy resin composition for semiconductor encapsulation comprising an epoxy resin, a curing agent, an inorganic filler, a catalyst, a flame retardant and an additive, wherein the resin composition is obtained by employing the epoxy resin mainly containing an epoxy resin having biphenyl structure, the curing agent mainly containing a phenolic aralkyl resin, a polysiloxane compound modified with polyether containing an amino group as the flame retardant, a polyimide resin as the additive, and not less than 87% by weight of the inorganic filler based on the total composition, wherein a semiconductor element is mounted on an iron frame, and loop length of a wire bond is not more than 3 mm.
- 6. A semiconductor device encapsulated by an epoxy resin composition for semiconductor encapsulation comprising an epoxy resin, a curing agent, an inorganic filler, a catalyst, a flame retardant and an additive, wherein the resin composition is obtained by employing the epoxy resin mainly containing an epoxy resin having biphenyl structure, the curing agent mainly containing a phenolic aralkyl resin, a polysiloxane compound modified with polyether containing an amino group as the flame retardant, a polyimide resin as the additive, and not less than 87% by weight of the inorganic filler based on the total composition, wherein a semiconductor element is mounted on a copper frame, and loop length of a wire bond is not less than 3 mm.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-91706 |
Mar 1999 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATION
This is a continuation-in-part of co-pending application Ser. No. 09/394,094 filed on Sep. 13, 1999 the disclosure of which is incorporated by reference.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4450457 |
Miyachi et al. |
May 1984 |
A |
6143423 |
Shiobara |
Nov 2000 |
A |
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09/394094 |
Sep 1999 |
US |
Child |
09/713010 |
|
US |