Embodiments of the present invention relate to the microelectronics manufacturing industry and more particularly to temperature controlled chucks for supporting a workpiece during plasma processing.
Power density in plasma processing equipment, such as those designed to perform plasma etching of microelectronic devices and the like, is increasing with the advancement in fabrication techniques. For example, powers of 5 to 10 kilowatts are now in use for 300 mm substrates. With the increased power densities, enhanced cooling of a chuck is beneficial during processing to control the temperature of a workpiece uniformly. Control over workpiece temperature and temperature uniformity is made more difficult where rapid temperature setpoint changes are desired, necessitating a chuck be designed with smaller thermal time constants.
The industry is now progressing toward 450 mm diameter substrates. Surface area of a chuck to support these larger substrates is approximately 2.25 times that of the current state of the art of 300 mm substrates. These larger chucks would have significantly greater mass if conventional construction techniques are applied to merely scale up the chuck. For example, one 300 mm design weighing in at around 14-15 lbs. increases to over 30 lbs. when simply scaled up to accommodate 450 mm diameter workpieces. This greater mass detrimentally increases thermal time constants of the system heating/cooling the workpiece.
Uniform application of heating/cooling power to a chuck is further hindered by the need to deliver both higher RF power and DC voltages to electrostatically clamp a workpiece to the chuck. Both RF power and DC voltage are also to be delivered in a uniform manner, making their individual routing within a chuck competitive with that of heat/cooling power delivery.
A chuck assembly and chuck assembly fabrication techniques that achieve sufficient rigidity and temperature stability for support of 450 mm workpieces, minimize thermal mass, and provide good thermal uniformity across the surface area of the workpiece are advantageous.
Embodiments include a base for an electrostatic chuck (ESC) assembly for supporting a workpiece during a manufacturing operation in a processing chamber, such as a plasma etch, clean, deposition system, or the like, which utilizes the chuck assembly. In embodiments, a chuck assembly includes a dielectric layer with a top surface to support the workpiece. In embodiments, the dielectric layer includes an aluminum nitride (AlN) puck bonded to an aluminum base. Inner fluid conduits are disposed in the base, below the dielectric layer, beneath an inner areal portion of the top surface. Outer fluid conduits are disposed in the base beneath an outer areal portion of the top surface. Each of the inner and outer fluid conduits may include two, three, or more fluid conduits arranged with azimuthal symmetry about a central axis of the chuck assembly. The fluid conduits are to conduct a heat transfer fluid, such as ethylene glycol/water, or the like, to heat/cool the top surface of the chuck and workpiece disposed thereon. In embodiments, an outlet of an inner fluid conduit is positioned at a radial distance of the chuck that is between an inlet of the inner fluid conduit and an inlet of an outer fluid conduit. The proximity of the two inlets to the outlet improves temperature uniformity of the top surface.
In embodiments, a counter flow conduit configuration provides improved temperature uniformity. The cooling conduit segments in each zone are interlaced so that fluid flows are in the opposite direction in radially adjacent segments.
In an embodiment, each separate fluid conduit formed in the base comprises a channel formed in the base with a cap e-beam welded to a recessed lip of the channel to make a sealed conduit. The mass of the individual channel caps is minimal and obviates the need to have a sub-base plate of the same surface area as the chuck for a conduit sealing surface. The elimination of the sub-base plate reduces the mass of the chuck assembly by nearly 30% over prior designs. This reduced mass translates into faster transient thermal response compared to prior designs.
In an embodiment, outer fluid conduits include an overlap region where a section of a first outer fluid conduit overlaps a section of a second, adjacent, outer fluid conduit along an azimuthal angle or distance. In one such embodiment, an outlet of the first outer fluid conduit overlaps an inlet of the second fluid conduit. The overlap region reduces local hot spots relative to a design without such overlap. In an embodiment, an outer fluid conduit is routed to fold back on itself to make at least two passes over a given azimuthal angle. To further improve the thermal uniformity, a compact, tri-fold channel segment is employed in each of the outer fluid loops, with the inlet and outlet of adjacent loops overlapping.
In embodiments, a chuck assembly includes a thermal break disposed within the cooling channel base between the inner and outer fluid conduits to improve the independence of temperature control between the inner and outer portions of the top surface. Depending on the embodiment, the thermal break includes a void or a second material with a higher thermal resistance value than that of the base material. In certain embodiments, the thermal break forms an interrupted annulus encircling an inner portion of the top surface with interruptions at points where a full thickness of the cooling channel base is provided for greater mechanical rigidity of the base.
In further embodiments, where an RF and DC electrode is to be inserted into the base, the base include a multi-contact fitting forming an outer circumference of the base coupler to couple to an RF connector, and a copper fitting forming an inter circumference of the base coupler to couple to a DC connector, with a insulator, such as Teflon disposed between separate electrical contacts of the base coupler.
Embodiments of the present invention are illustrated by way of example, and not limitation, in the figures of the accompanying drawings in which:
In the following description, numerous details are set forth. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without these specific details. In some instances, well-known methods and devices are shown in block diagram form, rather than in detail, to avoid obscuring the present invention. Reference throughout this specification to “an embodiment” means that a particular feature, structure, function, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. Thus, the appearances of the phrase “in an embodiment” in various places throughout this specification are not necessarily referring to the same embodiment of the invention. Furthermore, the particular features, structures, functions, or characteristics may be combined in any suitable manner in one or more embodiments. For example, a first embodiment may be combined with a second embodiment anywhere the two embodiments are not mutually exclusive.
As used in the description of the invention and the appended claims, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will also be understood that the term “and/or” as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
The terms “coupled” and “connected,” along with their derivatives, may be used herein to describe functional or structural relationships between components. It should be understood that these terms are not intended as synonyms for each other. Rather, in particular embodiments, “connected” may be used to indicate that two or more elements are in direct physical, optical, or electrical contact with each other. “Coupled” my be used to indicated that two or more elements are in either direct or indirect (with other intervening elements between them) physical, optical, or electrical contact with each other, and/or that the two or more elements co-operate or interact with each other (e.g., as in a cause an effect relationship).
The terms “over,” “under,” “between,” and “on” as used herein refer to a relative position of one component or material layer with respect to other components or layers where such physical relationships are noteworthy. For example in the context of material layers, one layer disposed over or under another layer may be directly in contact with the other layer or may have one or more intervening layers. Moreover, one layer disposed between two layers may be directly in contact with the two layers or may have one or more intervening layers. In contrast, a first layer “on” a second layer is in direct contact with that second layer. Similar distinctions are to be made in the context of component assemblies.
Referring to
When plasma power is applied to the chamber 105, a plasma is formed in a processing region over workpiece 110. A plasma bias power 125 is coupled into the chuck assembly 142 to energize the plasma. The plasma bias power 125 typically has a low frequency between about 2 MHz to 60 MHz, and may be for example in the 13.56 MHz band. In the exemplary embodiment, the plasma etch system 100 includes a second plasma bias power 126 operating at about the 2 MHz band which is connected to the same RF match 127 as plasma bias power 125 and coupled to a lower electrode 120 via a power conduit 127. A plasma source power 130 is coupled through a match (not depicted) to a plasma generating element 135 to provide high frequency source power to inductively or capacitively energize the plasma. The plasma source power 130 may have a higher frequency than the plasma bias power 125, such as between 100 and 180 MHz, and may for example be in the 162 MHz band.
The temperature controller 175 is to execute temperature control algorithms and may be either software or hardware or a combination of both software and hardware. The temperature controller 175 may further comprise a component or module of the system controller 170 responsible for management of the system 100 through a central processing unit 172, memory 173 and input/output interfaces 174. The temperature controller 175 is to output control signals affecting the rate of heat transfer between the chuck assembly 142 and a heat source and/or heat sink external to the plasma chamber 105. In the exemplary embodiment, the temperature controller 175 is coupled to a first heat exchanger (HTX)/chiller 177 and a second heat exchanger/chiller 178 such that the temperature controller 175 may acquire the temperature setpoint of the heat exchangers 177, 178 and temperature 176 of the chuck assembly, and control heat transfer fluid flow rate through fluid conduits in the chuck assembly 142. The heat exchanger 177 is to cool an outer portion of the chuck assembly 142 via a plurality of outer fluid conduits 141 and the heat exchanger 178 is to cool an inner portion of the chuck assembly 142 via a plurality of inner fluid conduits 140. One or more valves 185, 186 (or other flow control devices) between the heat exchanger/chiller and fluid conduits in the chuck assembly may be controlled by temperature controller 175 to independently control a rate of flow of the heat transfer fluid to each of the plurality of inner and outer fluid conduits 140, 141. In the exemplary embodiment therefore, two heat transfer fluid loops are employed. Any heat transfer fluid known in the art may be used. The heat transfer fluid may comprise any fluid suitable to provide adequate transfer of heat to or from the substrate. For example, the heat transfer fluid may be a gas, such as helium (He), oxygen (O2), or the like, or a liquid, such as, but not limited to ethylene glycol/water.
In an embodiment, the plurality of inner fluid channels 240 are disposed below an inner zone or portion 202 of the top surface extending outward from a central axis 220 to a first radial distance. The plurality of outer fluid channels 241 are disposed below an outer zone or portion 204, the outer portion 204 forming an outer annulus centered about the central axis 220 and extending outward from a second radial distance to an outer edge of the chuck assembly 242. Each of the inner portion 202 and outer portion 204 may comprise any number of fluid channels and may be arranged in any manner suitable to facilitate temperature uniformity across a top surface of the chuck assembly 142 (
In an embodiment, the inlet of an inner fluid channel is adjacent to an outlet of an outer fluid channel. As shown in
In an embodiment, a thermal break 270 is disposed in the cooling channel base 144 between the inner and outer fluid channels 240, 241 to reduce cross talk between the inner and outer portions 202, 204. For the exemplary embodiment having an inner portion 202 extending outward from a central axis 220 to a first radial distance and an outer portion 204 forming an outer annulus centered about the central axis 220 which extends outward from a second radial distance to an outer edge of the base 144, the thermal break 270 forms an annulus disposed a third radial distance between the first and second radial distances to encircle the inner portion 202. The thermal break 270 may be either a void formed in the cooling channel base 144, or a second material with a higher thermal resistance value than that of the surrounding bulk.
In an exemplary embodiment, the thermal break 270 is discontinuous along an azimuthal distance or angle of the cooling channel base 144. As shown in
As shown in example of
In embodiments, both inner and outer fluid channels include channel segments that are interlaced so that the fluid flows are in the opposite direction in radially adjacent segments. As depicted in
In an embodiment, each separate fluid conduit formed in the base comprises a channel formed in the base with a separate cap bonded to the channel. Generally, the cap is to be of a material having a coefficient of thermal expansion (CTE) that is well matched to that of the base. In one exemplary embodiment, the caps 370 are of the same material as that of the base (e.g., aluminum). Because the cap is to be welded along the perimeter of the channels, the cap can be advantageously cut from a sheet good of minimal thickness. With a separate bonded cap, the mass of the individual channel caps is minimal and obviates the need to have a sub-base plate of the same surface area as the chuck for sealing surface all the channels as a group. Elimination of the sub-base plate reduces the mass of the chuck assembly by nearly 30% over prior designs. This reduced mass translates into faster transient thermal response compared to prior designs.
In further embodiments, an RF and DC electrode is to be inserted into the cooling channel base 144. As shown in
At operation 715 a weld, preferably an e-beam weld is performed to seal the cap along the fluid conduit perimeter. In advantageous embodiments, no end mill is required after the e-beam weld because the cap recess ensures artifacts of the weld are not proud of the non-recessed base surface. With the cooling channel base fabrication complete, assembly may proceed with bonding of a ceramic puck or other dielectric layer adapted for electrostatic clamping of a workpiece.
It is to be understood that the above description is intended to be illustrative, and not restrictive. For example, while flow diagrams in the figures show a particular order of operations performed by certain embodiments of the invention, it should be understood that such order is not required (e.g., alternative embodiments may perform the operations in a different order, combine certain operations, overlap certain operations, etc.). Furthermore, many other embodiments will be apparent to those of skill in the art upon reading and understanding the above description. Although the present invention has been described with reference to specific exemplary embodiments, it will be recognized that the invention is not limited to the embodiments described, but can be practiced with modification and alteration within the spirit and scope of the appended claims. The scope of the invention should, therefore, be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.
This application claims the benefit of U.S. Provisional Application No. 61/638,375 filed on Apr. 25, 2012, titled “ESC COOLING BASE FOR LARGE DIAMETER SUBSTRATES,” the entire contents of which are hereby incorporated by reference in its entirety for all purposes.
Number | Date | Country | |
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61638375 | Apr 2012 | US |