Claims
- 1. In a method for chemical etching with an etching fluid an insulating layer over a surface of a semiconductor substrate, the steps comprising:
- submerging the semiconductor substrate in the etchng fluid; and
- applying a positive voltage with respect to the surface of the semiconductor substrate and the etching fluid to create an electric field across the insulating layer, so that reduced species of the insulating layer created during chemical etching are oxidized as the reduced species are created.
- 2. In a method as in claim 1 wherein the electric field created is between 10.sup.5 and 10.sup.7 volts/cm.
- 3. In a method as in claim 1 wherein the insulating layer prior to etching is composed substantially of silicon dioxide and wherein the semiconductor substrate is composed substantially of silicon.
CROSS REFERENCE TO RELATED APPLICATION
This is a division of application Ser. No. 590,257, filed 3/16/84, abandoned, which is a division of Ser. No. 470,673, filed 2/28/83, now U.S. Pat. No. 4,454,004.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
3438873 |
Schmidt |
Apr 1969 |
|
Divisions (2)
|
Number |
Date |
Country |
Parent |
590257 |
Mar 1984 |
|
Parent |
470673 |
Feb 1983 |
|