Claims
- 1. A method for etching a silicon containing layer in an object to be processed having a SiO.sub.2 film and a silicon containing layer adjacent thereto and formed of silicon-containing material other than SiO.sub.2, said method comprising the steps of:
- generating plasma of a processing gas comprising Cl.sub.2 gas and HBr gas wherein the ratio of HBr to HBr+Cl.sub.2 is about 25% by volume;
- exposing the silicon containing layer in plasma, thereby etching said layer, wherein said processing gas includes a gas containing oxygen.
- 2. The method according to claim 1, wherein said gas containing oxygen is at least one selected from a group consisting of O.sub.2 gas, N.sub.2 O gas, CO.sub.2 gas, CO gas, and NO.sub.2 gas.
- 3. The method according to claim 1, wherein the flow rate of said gas containing oxygen in said processing gas is 10% by volume or less.
- 4. The method according to claim 3, wherein the flow ratio of said gas containing oxygen in said processing gas is in the range of 1-4.5% by volume.
- 5. The method according to claim 1, wherein plasma of said processing gas is generated by supplying said processing gas to a chamber where said object to be processed is inserted, and by supplying high frequency electric power between a pair of electrodes opposing to each other.
- 6. The method according to claim 5, wherein pressure in the chamber is set to 1 Torr or less when plasma is generated.
- 7. The method according to claim 1, wherein said silicon containing layer is a polysilicon layer.
- 8. A method for etching a silicon containing layer in an object to be processed having a SiO.sub.2 film and a silicon containing layer adjacent thereto and formed of silicon-containing material other than SiO.sub.2, said method comprising the steps of:
- generating plasma of a processing gas comprising Cl.sub.2 gas and HBr gas;
- exposing the silicon containing layer in plasma, thereby etching said layer,
- wherein said processing gas includes oxygen or nitrogen containing gas, which is at least one selected from the group consisting of N.sub.2 O gas, CO.sub.2 gas, CO gas, N.sub.2 gas and NO.sub.2 gas, and wherein the flow rate of said oxygen or nitrogen containing gas in said processing gas is 10% or less by volume.
- 9. The method according to claim 8, wherein the ratio of HBr to HBr+Cl.sub.2 is in the range of 5-62% by volume.
- 10. The method according to claim 9, wherein the ratio of HBr to HBr+Cl.sub.2 is in the range of 15-52% by volume.
- 11. The method according to claim 8, wherein plasma of said processing gas is generated by supplying said processing gas to a chamber where said object to be processed is inserted, and by supplying high frequency electric power between a pair of electrodes opposing to each other.
- 12. The method according to claim 11, wherein pressure in the chamber is set to 1 Torr or less when plasma is generated.
- 13. The method according to claim 8, wherein said silicon containing layer is a polysilicon layer.
- 14. A method for etching a silicon containing layer in an object to be processed having a SiO.sub.2 film and a silicon containing layer adjacent thereto and formed of silicon-containing material other than SiO.sub.2, said method comprising the steps of:
- generating plasma of a processing gas comprising Cl.sub.2 gas and HBr gas;
- exposing the silicon containing layer in plasma, thereby etching said layer;
- wherein said processing gas includes oxygen or nitrogen containing gas, which is at least one selected from the group consisting of N.sub.2 O gas, CO.sub.2 gas, CO gas, N.sub.2 gas and NO.sub.2 gas, and wherein the flow rate of said oxygen or nitrogen containing gas in said processing gas is in the range of 1-4.5% by volume.
- 15. The method according to claim 14, wherein the ratio of HBr to HBr+Cl.sub.2 is in the range of 5-62% by volume.
- 16. The method according to claim 15, wherein the ratio of HBr to HBr+Cl.sub.2 is in the range of 15-52% by volume.
- 17. The method according to claim 14, wherein plasma of said processing gas is generated by supplying said processing gas to a chamber where said object to be processed is inserted, and by supplying high frequency electric power between a pair of electrodes opposing to each other.
- 18. The method according to claim 17, wherein pressure in the chamber is set to 1 Torr or less when plasma is generated.
- 19. The method according to claim 14, wherein said silicon containing layer is a polysilicon layer.
Priority Claims (1)
Number |
Date |
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Kind |
3-078317 |
Mar 1991 |
JPX |
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Parent Case Info
This application is a Continuation of application Ser. No. 08/015,057, filed on Feb. 8, 1993, now abandoned which is a Continuation-in-Part of Ser. No. 07/849,589, filed Mar. 11, 1992, now abandoned.
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Continuations (1)
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Number |
Date |
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Parent |
15057 |
Feb 1993 |
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Continuation in Parts (1)
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Number |
Date |
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Parent |
849589 |
Mar 1992 |
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