Embodiments of the present disclosure relate generally to processes and systems for exfoliation of deposited layers of material off work pieces such as masks, carriers, and other deposition system components, and more specifically, although not exclusively, to processes and systems for exfoliation of deposited layers off the surfaces of work pieces comprising application of ultrasonic energy to the pieces in a temperature controlled liquid, the temperature being controlled to increase stress at the interface between the deposited layers and the work piece due to a CTE (coefficient of thermal expansion) mismatch between the materials of the deposited layer(s) and the work piece.
Deposition systems for depositing thin films of materials on a substrate are widely used in many industries, such as the semiconductor industry, thin film battery industry, electrochromics industry, flat panel display industry, etc. These deposition systems may utilize a variety of work pieces such as masks, substrate carriers and sub-carriers, other deposition system components, etc. These work pieces need to be cleaned on a frequent basis to remove deposited material that has built up on the surfaces of the work pieces. The deposited materials may include a wide range of materials such as metals, semiconductors, insulators, electrolytes, etc. Generally, aggressive chemical processes (often using hazardous or toxic chemicals) or mechanical processes (that may negatively affect the dimensions and integrity of the work pieces) are used to clean these work pieces.
Clearly, there is a need for less aggressive processes for cleaning work pieces that do not use hazardous or toxic chemicals and do not significantly affect the dimensions or integrity of the work pieces.
Methods and equipment for removing deposited layers from deposition system work pieces, such as shadow masks, carriers, sub-carriers, other deposition system components, etc. are described herein. Work pieces from a wide variety of deposition systems, including PVD (physical vapor deposition), CVD (chemical vapor deposition), PECVD (plasma enhanced physical vapor deposition), sputtering, HWCVD (hot wire chemical vapor deposition), ALD (atomic layer deposition) systems, etc., may benefit from the processes described herein. It is envisaged that a very wide range of deposited materials, including metals, semiconductors, insulators, electrolytes, etc. may be removed using embodiments of the disclosed methods. Embodiments of the processes described herein may include applying ultrasonic energy to the coated work pieces in a temperature controlled liquid for removal of the built up deposited material. These processes are based on inducing interfacial stress due to CTE mismatch between the deposited layer(s) and the work piece to promote exfoliation of the deposited material during exposure to ultrasonic energy. As such, a temperature, or range of temperatures, within the operating range of the exfoliation equipment may be determined for assisting in developing bond breaking levels of interfacial stress and thus better exfoliation/delamination of the deposited layer(s)—leaving very clean, dimension-unaffected work pieces for reuse.
According to some embodiments, a process for exfoliation of deposited material off one or more work pieces such as masks, carriers, and other material deposition system components, may comprise: providing a work piece with a layer of deposited material coating the surface of the work piece; immersing the work piece in an ultrasonic bath and applying ultrasonic energy to the work piece, wherein the ultrasonic bath contains a fluid and the fluid is held at a constant temperature within the range from greater than room temperature to less than the fluid boiling point, wherein the constant temperature is chosen to provide a significant CTE (coefficient of thermal expansion) mismatch between the layer of deposited material and the work piece in order to promote exfoliation of the layer of deposited material off the work piece, and wherein process time in the ultrasonic bath is within a range from several seconds up to 120 minutes for loosening the layer of deposited material; cleaning the work piece by rinsing with liquids; and drying the work piece.
Furthermore, according to some embodiments, a process for exfoliation of deposited material off one or more work pieces such as masks, carriers, and other material deposition system components, may comprise: providing a work piece with a layer of deposited material coating the surface of the work piece; immersing the work piece in an ultrasonic bath and applying ultrasonic energy to the work piece, wherein the ultrasonic bath contains a fluid and the water is cycled over a ΔT chosen within the range between room temperature and less than the fluid boiling point, wherein the work piece is subject to a multiplicity of cycles over ΔT during immersion in the ultrasonic bath, wherein the ΔT is chosen to provide excursions through temperatures at which there is a significant CTE (coefficient of thermal expansion) mismatch between the layer of deposited material and the work piece in order to promote exfoliation of the layer of deposited material off the work piece, and wherein process time in the ultrasonic bath is within a range from several seconds up to 120 minutes for loosening the layer of deposited material; cleaning the work piece by rinsing with liquids; and drying the work piece.
Furthermore, this disclosure describes apparatus and systems configured for carrying out the aforementioned processes. According to some embodiments, a system for exfoliation of deposited material off one or more work pieces such as masks, carriers, and other material deposition system components, may comprise: a first apparatus for automated mechanical abrading of a work piece coated with a layer of deposited material; a second apparatus for applying ultrasonic energy to the work piece in a temperature controlled fluid; a third apparatus for scrubbing the layer of deposited material on the work piece with abrasive materials; a fourth apparatus for acid treatment of any residual coating on the work piece; a fifth apparatus for cleaning the work piece using liquid rinses; and a sixth apparatus for drying the work piece.
These and other aspects and features of the present disclosure will become apparent to those ordinarily skilled in the art upon review of the following description of specific embodiments in conjunction with the accompanying figures, wherein:
Embodiments of the present disclosure will now be described in detail with reference to the drawings, which are provided as illustrative examples of the disclosure so as to enable those skilled in the art to practice the disclosure. Notably, the figures and examples below are not meant to limit the scope of the present disclosure to a single embodiment, but other embodiments are possible by way of interchange of some or all of the described or illustrated elements. Moreover, where certain elements of the present disclosure can be partially or fully implemented using known components, only those portions of such known components that are necessary for an understanding of the present disclosure will be described, and detailed descriptions of other portions of such known components will be omitted so as not to obscure the disclosure. In the present specification, an embodiment showing a singular component should not be considered limiting; rather, the disclosure is intended to encompass other embodiments including a plurality of the same component, and vice-versa, unless explicitly stated otherwise herein. Moreover, applicants do not intend for any term in the specification or claims to be ascribed an uncommon or special meaning unless explicitly set forth as such. Further, the present disclosure encompasses present and future known equivalents to the known components referred to herein by way of illustration.
Methods and equipment for removing deposited layers from deposition system work pieces, such as shadow masks, carriers, sub-carriers, other deposition system components, etc. are described herein. Work pieces from a wide variety of deposition systems, including PVD such as sputtering and evaporation, CVD such as PECVD and HWCVD, electroplating, sol-gel, ALD systems, etc., may benefit from the processes described herein. It is envisaged that a very wide range of deposited materials, including metals, semiconductors, insulators, electrolytes, organic capping layers, etc, may be removed using embodiments of the disclosed methods. The processes disclosed herein may be of benefit to a wide range of industries, including the semiconductor industry, thin film battery industry, electrochromics industry, flat panel display industry, etc. The inventors have found that the methods and equipment described herein are particularly effective for removing materials used in the TFB (thin film battery) industry—for example, LiPON and Li are readily removed from mask/subcarrier workpieces by an ultrasonic process, with the fluid in the ultrasonic bath at room temperature for Li and approximately 70° C. for UPON, as described herein, in some cases even without the need for temperature cycling of the fluid in the ultrasonic bath or mechanical processing, and LiCoO2 is readily removed by the hot ultrasonic process in combination with mechanical processing and temperature cycling of the fluid in the ultrasonic bath over a temperature range from room temperature to just below the boiling point of the fluid.
Embodiments of the processes described herein may include applying ultrasonic energy to work pieces coated with a deposited material in a temperature controlled liquid for removal of the built up deposited material from the work pieces. These processes are based on inducing interfacial stress due to CTE mismatch between the deposited layer(s) and the work piece to promote exfoliation of the deposited material during exposure to ultrasonic energy. As such, a temperature, or range of temperatures, within the operating range of the exfoliation equipment may be determined for assisting in developing bond breaking levels of interfacial stress and thus better exfoliation/delamination of the deposited layer(s)—leaving very clean, dimension-unaffected work pieces for reuse.
Work pieces may be made of materials such as: ferromagnetic materials like Invar (an Fe—Ni alloy with a very low CTE, which is commonly used as a mask material), other metals like stainless steel, ceramics such as Al2O3 and AlN, etc.
For the specific example of work pieces used in the manufacture of electrochemical devices that may benefit from the processes and equipment of the present disclosure, some typical materials that may be deposited on the work pieces and examples of the specific types of deposition systems that may be used for these depositions are provided as follows. An example of a cathode layer is a LiCoO2 layer, of an anode layer is a Li metal layer, and of an electrolyte layer is a LiPON layer. However, it is expected that a wide range of cathode materials such as LiMn2O4 and LiNiCoAlO2, V2O5, LiMnO2, Li5FeO4, NMC (NiMnCo oxide), NCA (NiCoAl oxide), LMO (LixMnO2), LFP (LixFePO4), LiMn spinel, etc. may be used, a wide range of anode materials such as Si, C, silicon-lithium alloys, lithium silicon sulfide, Al, Sn, etc. may be used, and a wide range of lithium-conducting electrolyte materials such as solid polymer electrolytes, LiI/Al2O3 mixtures, LLZO (LiLaZr oxide), LiSiCON, etc. may be used. Various electrically conducting materials may also be deposited, for example as anode or cathode current collector layers, including one or more of Ag, Al, Au, Ca, Cu, Co, Sn, Pd, Zn and Pt which may be alloyed and/or present in multiple layers of different materials and/or include Ti adhesion layers, etc. These materials may be deposited using deposition systems such as: PVD systems such as sputtering and evaporation systems, CVD systems, electroplating systems, sol-gel systems, etc. Other examples of vacuum deposition systems include PECVD, reactive sputtering, non-reactive sputtering, RF (radio frequency) sputtering, multi-frequency sputtering, electron beam evaporation, ion beam evaporation, thermal evaporation, ALD, etc. Other examples of non-vacuum based deposition include plasma spray, spray pyrolysis, slot die coating, screen printing, etc.
Note that typically the stress between a deposited layer of a first material on a substrate of a second material will depend on the thickness of the first layer, consequently the CTE mismatch that may be sufficient to promote exfoliation in the ultrasonic bath will also depend on the thickness of the first layer—the thicker the first layer, the smaller the CTE mismatch can be in order to be able to exfoliate the first layer using methods according to embodiments as disclosed herein.
Note that one or more of the mechanically abrading (102), scrubbing (104) and acid treatment (105) may not necessarily need to be used as part of the exfoliation process, but are available to assist in the exfoliation of deposited layers off the work piece that otherwise may not easily be removed. For example, Li or LiPON layers coating masks/sub-carriers will typically exfoliate easily and completely without any additional mechanical treatment. For masks/sub-carriers coated with metals or LiCoO2, sand paper may be used for further cleaning after ultrasonic treatment. In addition, for thick cathode TFBs, each cathode deposition typically generates more than a 10 μM thick layer of LiCoO2 on masks/subcarriers, so cleaning of LiCoO2 masks/sub-carriers may be necessary after each deposition to ensure good particle performance (lack of particle generation during subsequent use of the work piece). Due to the high stress in thick cathode layers, LiCoO2 films may start to delaminate from masks/sub-carriers after the hot ultrasonic process at about 70° C., after which a light sand paper treatment is enough to remove any LiCoO2 residuals from the masks/sub-carriers.
Furthermore, with reference to
Although embodiments of the present disclosure have been particularly described with reference to certain embodiments thereof, it should be readily apparent to those of ordinary skill in the art that changes and modifications in the form and details may be made without departing from the spirit and scope of the disclosure.
This application claims the benefit of U.S. Provisional Application No. 62/042,922, filed Aug. 28, 2014.
Filing Document | Filing Date | Country | Kind |
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PCT/US15/47403 | 8/28/2015 | WO | 00 |
Number | Date | Country | |
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62042922 | Aug 2014 | US |