Claims
- 1. A light emitting device having at least a substrate and an active region, said light emitting device comprising:
said substrate having a substrate lattice constant between 5.63 Å and 5.67 Å; a first strained layer having a lattice constant smaller than said substrate lattice constant and being disposed between said substrate and said active region; said active region comprising at least one pseudomorphic light emitting active layer disposed above said substrate, said active layer comprising at least In, Ga and As, said active layer comprises at least two strained layers, and a third layer disposed between said two strained layers, said active layer having a thickness equal to or less than 80 Å; and wherein said light emitting device has an emission wavelength of at least 1.3 μm.
- 2. The device recited in claim 1, wherein said active layer has a concentration of In and Sb of 25% or greater of a semiconductor material in said active layer.
- 3. The device recited in claim 1, wherein said active layer has a thickness less than 2.5 times CT, where: where: CT=(0.4374/f)[In(CT/4)+1], where f is an average lattice mismatch of said active layer normalized to a lattice constant of 5.65 Å.
- 4. The device recited in claim 1, wherein said first strained layer has at least one graded interface.
- 5. The device recited in claim 1, wherein said first strained layer has at least one stepped interface.
- 6. The device recited in claim 1, wherein said first strained layer has at least one superlattice interface.
- 7. The device recited in claim 1, wherein said first strained layer has at least one smoothly graded interface.
- 8. The device recited in claim 1, wherein said first strained layer comprises GaAs1-zPz with 0.01≦z≦1.0.
- 9. The device recited in claim 1, further comprising a second strained layer disposed above said active region.
- 10. The device recited in claim 9, wherein said second strained layer comprises GaAs1-zPz with 0.01≦z≦1.0.
- 11. The device recited in claim 1, wherein said substrate comprises GaAs.
- 12. The device recited in claim 1, wherein said substrate consists essentially of GaAs.
- 13. The device recited in claim 1, wherein said substrate has an orientation between 0° and 5° off the (001) orientation.
- 14. The device recited in claim 1, further comprising:
a first conductive layer having a first conductivity type, said first conductive layer being disposed below said active layer and in electrical communication therewith; a second conductive layer having a second conductivity type, said second conductive layer being disposed above said active layer and in electrical communication therewith; and electrical communication means for providing electrical current to said active layer.
- 15. The device recited in claim 14, further comprising a bottom mirror disposed below said radiation-emitting layer and a top mirror disposed above said radiation-emitting layer, said top and bottom mirrors defining an optical cavity having a cavity resonance at a resonance wavelength corresponding to a resonance energy; said resonance wavelength in μm, as measured in vacuum, being equal to 1.24 divided by said resonance energy, in electron volts.
- 16. The device recited in claim 15, wherein said bottom mirror comprises alternating high-index layers and low-index layers.
- 17. The device recited in claim 16, wherein said low index layers comprise oxidized material.
- 18. The device recited in claim 15, wherein said top mirror, comprises alternating low index layers and high index layers.
- 19. The device recited in claim 18, wherein said low index layers are selected from the group consisting of: oxidized material, low-index dielectric material, relatively-low-index semiconductor material, and any combination thereof.
- 20. The device recited in claim 19, wherein said high index layers are selected from the group consisting of: high-index dielectric material, high-index semiconductor material and any combination thereof.
- 21. The device recited in claim 15, further comprising an aperture disposed between said active region and said top mirror, said aperture having a first and second region, said first region exhibits high electrical resistance; and second region and has an electrical resistance lower that said first region.
- 22 The device recited in claim 1, wherein said active region has a peak transition wavelength of at least 1.24 μm.
- 23. The device recited in claim 21, wherein said first region is oxidized and said second region is oxidized less than said first region.
- 24. The device recited in claim 15, wherein said resonance wavelength exceeds a peak transition wavelength of said active region by at least 0.010 μm.
- 25. The device recited in claim 14, further comprising a grating layer disposed above said second conductive layer, said grating layer having grating lines extending at least partially or completely across said active region to form a grating, said grating defining an optical cavity having a cavity resonance at a resonance wavelength corresponding to a resonance energy; said resonance wavelength in μm, as measured in vacuum, being equal to 1.24 divided by said resonance energy, in electron volts.
- 26. The device recited in claim 25, wherein said grating lines are shifted by approximately least one quarter wave or a multiple thereof to form a phase shift grating.
- 27. A light emitting device having at least a substrate and an active region, said light emitting device comprising:
said substrate having a substrate lattice constant between 5.63 Å and 5.67 Å; a first strained layer having a lattice constant smaller than a substrate lattice constant and being disposed between said substrate and said active region; said active region comprising at least one pseudomorphic light emitting active layer disposed above said substrate, said active layer comprising at least In, Ga and As; said active layer having a concentration of In and Sb of 25% or greater of a semiconductor material in said active layer, said active layer having a thickness greater than CT and less than 2.5 times CT for a given material, where: CT=(0.4374/f)[In(CT/4)+1], where f is an average lattice mismatch of said active layer normalized to a lattice constant of 5.65 Å; wherein said light emitting device has an emission wavelength of at least 1.3 μm.
- 28. A light emitting device having at least a substrate and an active region, said light emitting device comprising:
said substrate having a substrate lattice constant between 5.63 Å and 5.67 Å; a first strained layer disposed between said substrate and said active region, said first strained layer having a first accumulated strain and a first critical accumulated strain associated therewith, said first accumulated strain being less than said first critical accumulated strain; said active region comprising at least one pseudomorphic light emitting active layer disposed above said substrate, said active layer comprising at least In, Ga and As; said active layer having a concentration of In and Sb greater than 25% of a semiconductor material in said active layer, said active layer having a second accumulated strain and a second critical accumulated strain associated therewith, the algebraic sum of said first and second accumulated strains being less than said second critical accumulated strain; wherein an algebraic sum said first and second critical accumulated strains for a given material equals a strain of said material multiplied by CT for a given material, where: CT=(0.4374/f)[In(CT/4)+1], where f is an average lattice mismatch of said active layer normalized to a lattice constant of 5.65 Å; wherein said light emitting device has an emission wavelength of at least 1.3 μm.
- 29. The device recited in claim 28, further comprising:
a first conductive layer having a first conductivity type, said first conductive layer disposed below said active layer and in electrical communication with said active layer; a second conductive layer having a second conductivity type, said second conductive layer being disposed above said active layer and in electrical communication therewith; and electrical communication means for providing electrical current to said active layer.
- 30. The device recited in claim 29, further comprising a bottom mirror disposed below said radiation-emitting layer and a top mirror disposed above said radiation-emitting layer, said top and bottom mirrors defining an optical cavity having a cavity resonance at a resonance wavelength corresponding to a resonance energy; said resonance wavelength in Elm, as measured in vacuum, being equal to 1.24 divided by said resonance energy, in electron volts.
- 31. The device recited in claim 29, wherein said bottom mirror comprises alternating high-index layers and low-index layers.
- 32. The device recited in claim 31, wherein said low index layers comprise oxidized material.
- 33. The device recited in claim 30, wherein said top mirror, comprises alternating low index layers and high index layers.
- 34. The device recited in claim 33, wherein said low index layers are selected from the group consisting of: oxidized material, low-index dielectric material, relatively-low-index semiconductor material, and any combination thereof.
- 35. The device recited in claim 34, wherein said high index layers are selected from the group consisting of: high-index dielectric material, high-index semiconductor material and any combination thereof.
- 36. The device recited in claim 30, further comprising an aperture disposed between said active region and said top mirror, said aperture having a first and second region.
- 37. The device recited in claim 36, wherein said first region exhibits high electrical resistance; and second region and has an electrical resistance lower that said first region.
- 38. The device recited in claim 36, wherein said first region is oxidized and said second region is oxidized less than said first region.
- 39. The device recited in claim 30, wherein said active region has a peak transition wavelength of at least 1.24 μm and said resonance wavelength exceeds a peak transition wavelength of said active region by at least 0.010 μm.
- 40. The device recited in claim 29, further comprising a grating layer disposed above said second conductive layer, said grating layer having grating lines extending at least partially or completely across said active region to form a grating, said grating defining an optical cavity having a cavity resonance at a resonance wavelength corresponding to a resonance energy; said resonance wavelength in μm, as measured in vacuum, being equal to 1.24 divided by said resonance energy, in electron volts.
- 41. The device recited in claim 29, wherein said grating lines are shifted by approximately least one quarter wave or a multiple thereof to form a phase shift grating.
- 42. A light emitting device having at least a substrate and an active region, said light emitting device comprising:
said substrate comprising having a substrate lattice constant between 5.63 Å and 5.67 Å; said active region comprising at least one pseudomorphic light emitting active layer disposed above said substrate, said active layer comprising at least In, Ga, As and N, said active layer having a thickness equal to or less than a respective CT, where: CT=(0.4374/f)[In(CT/4)+1], where f is an average lattice mismatch of said active layer normalized to a lattice constant of 5.65 Å; wherein said active layer comprises at least two strained layers, and a third layer disposed between said two strained layers, forming a superlattice having a nitrogen content of at least 0.01% of a group V semiconductor material in said active region; and wherein said light emitting device has an emission wavelength of at least 1.3 μm.
- 43. The device recited in claim 42, wherein said active region has a peak transition wavelength of at least 1.24 μm.
- 44. The device recited in claim 42, wherein said substrate comprises GaAs.
- 45. The device recited in claim 42, wherein said substrate consists essentially of GaAs.
- 46. The device recited in claim 42, wherein said substrate has a orientation between 0° and 5° off the (001) orientation.
- 47. The device recited in claim 42, wherein said superlattice has an average sum of In and Sb concentrations of greater than 30% of the type three semiconductor material.
- 48. The device recited in claim 42, wherein said active layers are integral multiples of atomic monolayers.
- 49. The device recited in claim 42, wherein at least two adjacent superlattice layers differ in at least one constituent element by at least 15%.
- 50. The device recited in claim 42, wherein said superlattice comprises (InAs)2(GaAs)1 (InAs)2(GaAs)1(InAs)2, wherein InAs and GaAs comprise at least 90% of the (InAs) and (GaAs) layers, respectively.
- 51. The device recited in claim 42, wherein said superlattice comprises (InAs)3(GaAs)1 (InAs)3, wherein InAs and GaAs comprise at least 90% of the (InAs) and (GaAs) layers, respectively.
- 52. The device recited in claim 42, wherein said superlattice comprises (InAs)1(GaAs)1(InAs)2(GaAs)1(InAs)2(GaAs)1(InAs)1, wherein InAs and GaAs comprise at least 90% of the (InAs) and (GaAs) layers, respectively.
- 53. The device recited in claim 42, wherein said superlattice comprises (InAs)1(GaAs)1(InAs)4(GaAs)1(InAs)1, wherein InAs and GaAs comprise at least 90% of the (InAs) and (GaAs) layers, respectively.
- 54. The device recited in claim 42, wherein said superlattice comprises (InAs)2(GaAs)2(InAs)4(GaAs)2(InAs)2, wherein InAs and GaAs comprise at least 90% of the (InAs) and (GaAs) layers, respectively.
- 55. The device recited in claim 42, wherein said active region consists essentially of InyGa(1-y)As1-(w+v)SbwNv, where v≦0.0095, and w+y≧0.30.
- 56. The device recited in claim 42, wherein said active region consists essentially of InyGa(1-y)As1-(w+v)SbwNv, where v≦0.0069, and w+y≧0.33.
- 57. The device recited in claim 42, wherein said active region consists essentially of InyGa(1-y)As1-(w+v)SbwNv, where v≦0.0047, and w+y≧0.4.
- 58. The device recited in claim 42, wherein said active region consists essentially of InyGa(1-y)As1-(w+v)SbwNv, where v≦0.0014, and w+y≧0.5.
- 59. The device recited in claim 42, wherein said emission wavelength of at least 1.3 μm occurs with said active layer at a temperature of 300K or less.
- 60. The device recited in claim 42, wherein said emission wavelength is 1.3 μm with said active layer at a temperature greater than 300K.
- 61. The device recited in claim 42, further comprising:
a first conductive layer having a first conductivity type, said first conductive layer disposed in electrical communication with said active layer; a second conductive layer having a second conductivity type, said second conductive layer being disposed above said active layer and in electrical communication therewith; and electrical communication means for providing electrical current to said active layer.
- 62. The device recited in claim 61, further comprising a bottom mirror disposed below said active layer and a top mirror disposed above said active layer, said top and bottom mirrors defining an optical cavity having a cavity resonance at a resonance wavelength corresponding to a resonance energy; said resonance wavelength in μm, as measured in vacuum, being equal to 1.24 divided by said resonance energy, in electron volts.
- 63. The device recited in claim 62, wherein said bottom mirror comprises alternating high-index layers and low-index layers.
- 64. The device recited in claim 62, wherein said top mirror, comprises alternating low index layers and high index layers.
- 65. The device recited in claim 62, further comprising an aperture disposed between said active region and said top mirror, said aperture having a first and second region, said first region exhibits high electrical resistance; and second region and has an electrical resistance lower that said first region.
- 66. The device recited in claim 68, wherein said first region is oxidized and said second region is oxidized less than said first region.
- 67. The device recited in claim 62, wherein said active region has a peak transition wavelength of at least 1.24 μm and said resonance wavelength exceeds a peak transition wavelength of said active region by at least 0.010 μm.
- 68. The device recited in claim 61, further comprising a grating layer disposed above said second conductive layer, said grating layer having grating lines extending at least partially or completely across said active region to form a grating, said grating defining an optical cavity having a cavity resonance at a resonance wavelength corresponding to a resonance energy; said resonance wavelength in μm, as measured in vacuum, being equal to 1.24 divided by said resonance energy, in electron volts.
- 69. The device recited in claim 68, wherein said grating lines are shifted by approximately least one quarter wave or a multiple thereof to form a phase shift grating.
- 70. The device recited in claim 62, wherein said active region consists essentially of InyGa(1-y)As1-(w+y)SbwNv, where v≦0.0095, and w+y≧0.30.
- 71. The device recited in claim 62, wherein said active region consists essentially of InyGa(1-y)As1-(w+v)SbwNv, where v≦0.0044, and w+y≧0.33.
- 72. The device recited in claim 62, wherein said active region consists essentially of InyGa(1-y)As1-(w+v)SbwNv, where v≦0.0022, and w+y≧0.4.
- 73. The device recited in claim 62, wherein said active region consists essentially of InyGa(1-y)As1-(w+v)SbwNv, where v≦0.0006, and w+y≧0.5.
- 74. A light emitting device having at least a substrate and an active region, said light emitting device comprising:
said substrate comprising having a substrate lattice constant between 5.63 Å and 5.67 Å; a first strained layer disposed between said substrate and said active region, said first strained layer having a first accumulated strain and a first critical accumulated strain associated therewith, said first accumulated strain being less than said first critical accumulated strain; said active region comprising at least one pseudomorphic light emitting active layer disposed above said substrate, said active layer comprising at least In, Ga, As and N, said active layer comprising at least two strained layers, and a third layer disposed between said two strained layers, forming a superlattice having a nitrogen content of at least 0.01% of a group V semiconductor material in said active region, said active layer having a second accumulated strain and a second critical accumulated strain associated therewith, the algebraic sum of said first and second accumulated strains being less than said second critical accumulated strain; wherein said first and second critical accumulated strain for a given material equal a strain of said material multiplied by CT for a given material, where: CT=(0.4374/f)[In(CT/4)+1], where f is an average lattice mismatch of said material normalized to a lattice constant of 5.65 Å; and wherein said light emitting device has an emission wavelength of at least 1.3 μm.
- 75. The device recited in claim 74, wherein said active region has a peak transition wavelength of at least 1.24 μm.
- 76. The device recited in claim 74, wherein said substrate comprises GaAs.
- 77. The device recited in claim 74, wherein said substrate consists essentially of GaAs.
- 78. The device recited in claim 74, wherein said substrate has an orientation between 0° and 5° off the (001) orientation.
- 79. The device recited in claim 74, wherein said superlattice has an average sum of In and Sb concentrations of greater than 12.5% of a semiconductor material in said superlattice.
- 80. The device recited in claim 74, wherein said active layers are integral multiples of atomic monolayers.
- 81. The device recited in claim 74, wherein at least two adjacent superlattice layers differ in at least one constituent element by at least 15%.
- 82. The device recited in claim 74, wherein said active region consists essentially of InyGa(1-y)As1-(w+v)SbwNv, where v≦0.0095, and w+y≧0.30.
- 83. The device recited in claim 74, wherein said first strained layer comprises GaAs1-zPz with 0.1≦z≦1.0.
- 84. The device recited in claim 74, further comprising a second strain compensating layer disposed above said active region, said second strain compensating layer having a third accumulated strain and a third critical accumulated strain associated therewith.
- 85. The device recited in claim 84, wherein said second strained layer comprises GaAs1-zPz with 0.1≦z≦1.0.
- 86. The device recited in claim 74, wherein said emission wavelength of at least 1.3 μm occurs with said active layer at a temperature of 300K or less.
- 87. The device recited in claim 74, wherein said emission wavelength is 1.3 μm with said active layer at a temperature greater than 300K.
- 88. The device recited in claim 74, further comprising:
a first conductive layer having a first conductivity type, said first conductive layer disposed in electrical communication with said active layer; a second conductive layer having a second conductivity type, said second conductive layer being disposed above said active layer and in electrical communication therewith; and electrical communication means for providing electrical current to said active layer.
- 89. The device recited in claim 88, further comprising a bottom mirror disposed below said active layer and a top mirror disposed above said active layer, said top and bottom mirrors defining an optical cavity having a cavity resonance at a resonance wavelength corresponding to a resonance energy; said resonance wavelength in μm, as measured in vacuum, being equal to 1.24 divided by said resonance energy, in electron volts.
- 90. The device recited in claim 89, wherein said bottom mirror comprises alternating high-index layers and low-index layers.
- 91. The device recited in claim 90, wherein said low index layers comprise oxidized material.
- 92. The device recited in claim 89, wherein said top mirror, comprises alternating low index layers and high index layers.
- 93. The device recited in claim 92, wherein said low index layers are selected from the group consisting of: oxidized material, low-index dielectric material, relatively-low-index semiconductor material, and any combination thereof.
- 94. The device recited in claim 92, wherein said high index layers are selected from the group consisting of: high-index dielectric material, high-index semiconductor material and any combination thereof.
- 95. The device recited in claim 89, further comprising an aperture disposed between said active region and said top mirror, said aperture having a first and second region.
- 96. The device recited in claim 95, wherein said first region exhibits high electrical resistance; and second region and has an electrical resistance lower that said first region.
- 97. The device recited in claim 95, wherein said first region is oxidized and said second region is oxidized less than said first region.
- 98. The device recited in claim 89, wherein said active region has a peak transition wavelength of at least 1.24 μm and said resonance wavelength exceeds a peak transition wavelength of said active region by at least 0.010 μm.
- 99. The device recited in claim 98, further comprising a grating layer disposed above said second conductive layer, said grating layer having grating lines extending at least partially or completely across said active region to form a grating, said grating defining an optical cavity having a cavity resonance at a resonance wavelength corresponding to a resonance energy; said resonance wavelength in μm, as measured in vacuum, being equal to 1.24 divided by said resonance energy, in electron volts.
- 100. The device recited in claim 99, wherein said grating lines are shifted by approximately least one quarter wave or a multiple thereof to form a phase shift grating.
- 101. The device recited in claim 89, wherein said active region consists essentially of InyGa(1-y)As1-(w+v)SbwNv, where v≦0.0033, and w+y≧0.33.
- 102. The device recited in claim 89, wherein said active region consists essentially of InyGa(1-y)As1-(w+v)SbwNv, where v≦0.0068, and w+y≧0.4.
- 103. A light emitting device having at least a substrate and an active region, said light emitting device comprising:
said substrate comprising having a substrate lattice constant between 5.63 Å and 5.67 Å; a first strained layer having a lattice constant smaller than aid substrate lattice constant and being disposed between said substrate and said active region; said active region comprising at least one pseudomorphic light emitting active layer disposed above said substrate, said active layer comprising at least In, Ga, As and N, said active layer comprises at least two strained layers, and a third layer disposed between said two strained layers, said active layer having a nitrogen concentration of at least 0.01% of a group V semiconductor material in said active layer, said active layer having a thickness equal to or less than 175 Å; and wherein said light emitting device has an emission wavelength of at least 1.3 μm.
- 104. The device recited in claim 103, wherein said active layer has a thickness equal to or less than 144 Å.
- 105. The device recited in claim 103, wherein said substrate comprises GaAs.
- 106. The device recited in claim 103, wherein said substrate consists essentially of GaAs.
- 107. The device recited in claim 103, wherein said substrate has an orientation between 0° and 5° off the (001) orientation.
- 108. The device recited in claim 103, wherein said superlattice has an average sum of In and Sb concentrations of greater than 16.5% of a semiconductor material in said superlattice.
- 109. The device recited in claim 103, wherein said active region consists essentially of InyGa(1-y)As1-(w+v)SbwNv, where v≦0.0095, and w+y≧0.33.
- 110. The device recited in claim 103, wherein said active region consists essentially of InyGa(1-y)As1-(w+v)SbwNv, where v≦0.009, and w+y≧0.33.
- 111. The device recited in claim 103, wherein said active region consists essentially of InyGa(1-y)As1-(w+v)SbwNv, where v≦0.0068, and w+y≧0.4.
- 112. The device recited in claim 103, wherein said active region consists essentially of InyGa(1-y)As1-(w+v)SbwNv, where v≦0.0035, and w+y≧0.5.
- 113. The device recited in claim 103, wherein said first strained layer comprises GaAs1-zPz with 0.01≦z≦1.0.
- 114. The device recited in claim 103, wherein said second strained layer comprises GaAs1-zPz with 0.01≦z≦1.0.
- 115. The device recited in claim 103, wherein said emission wavelength of at least 1.3 μm occurs with said active layer at a temperature of 300K or less.
- 116. The device recited in claim 103, wherein said emission wavelength is 1.3 μm with said active layer at a temperature greater than 300K.
- 117. The device recited in claim 103, further comprising:
a first conductive layer having a first conductivity type, said first conductive layer disposed in electrical communication with said active layer; a second conductive layer having a second conductivity type, said second conductive layer being disposed above said active layer and in electrical communication therewith; and electrical communication means for providing electrical current to said active layer.
- 118. The device recited in claim 117, further comprising a bottom mirror disposed below said active layer and a top mirror disposed above said active layer, said top and bottom mirrors defining an optical cavity having a cavity resonance at a resonance wavelength corresponding to a resonance energy; said resonance wavelength in μm, as measured in vacuum, being equal to 1.24 divided by said resonance energy, in electron volts.
- 119. The device recited in claim 118, further comprising an aperture disposed between said active region and said top mirror, said aperture having a first and second region.
- 120. The device recited in claim 119, wherein said first region exhibits high electrical resistance; and second region and has an electrical resistance lower that said first region.
- 121. The device recited in claim 119, wherein said first region is oxidized and said second region is oxidized less than said first region.
- 122. The device recited in claim 118, wherein said active region has a peak transition wavelength of at least 1.24 μm and said resonance wavelength exceeds a peak transition wavelength of said active region by at least 0.010 μm.
- 123. The device recited in claim 117, further comprising a grating layer disposed above said second conductive layer, said grating layer, having grating lines extending at least partially or completely across said active region to form a grating, said grating defining an optical cavity having a cavity resonance at a resonance wavelength corresponding to a resonance energy; said resonance wavelength in μm, as measured in vacuum, being equal to 1.24 divided by said resonance energy, in electron volts.
- 124. The device recited in claim 123, wherein said grating lines are shifted by approximately least one quarter wave or a multiple thereof to form a phase shift grating.
- 125. A light emitting device having at least a substrate and an active region, said light emitting device comprising:
said substrate comprising having a substrate lattice constant between 5.63 Å and 5.67 Å; said substrate comprising having a substrate lattice constant between 5.63 Å and 5.67 Å; a first strained layer having a lattice constant smaller than aid substrate lattice constant and being disposed between said substrate and said active region; said active region comprising at least one pseudomorphic light emitting active layer disposed above said substrate, said active layer comprising at least In, Ga, As and N, said active layer comprises at least two strained layers, and a third layer disposed between said two strained layers, said active layer having a nitrogen concentration of at least 0.01% of a group V semiconductor material in said active layer, said active layer having a thickness equal to or greater than CT for a given material, where: CT=(0.4374/f)[In(CT/4)+1], where f is an average lattice mismatch of said active layer normalized to a lattice constant of 5.65 Å; and wherein said light emitting device has an emission wavelength of at least 1.3 μm.
- 126. The device recited in claim 125, wherein said active layer has a thickness equal to or less than 2.5 times said CT.
- 127. The device recited in claim 125, wherein said active layer has a thickness equal to or less than 2.0 times said CT.
- 128. A light emitting device having at least a substrate and an active region, said light emitting device comprising:
said substrate comprising having a substrate lattice constant between 5.63 Å and 5.67 Å; a first strained layer disposed between said substrate and said active region, said first strained layer having a first accumulated strain and a first critical accumulated strain associated therewith, said first accumulated strain being less than said first critical accumulated strain; said active region comprising at least one pseudomorphic light emitting active layer disposed above said substrate, said active layer comprising at least In, Ga, As and N, said active layer comprises at least two strained layers, and a third layer disposed between said two strained layers, said active layer having an average sum of In and Sb concentrations in said superlattice at 33% or greater and said nitrogen content of at least 0.01% of a group V semiconductor material in said active region, said active layer having a second accumulated strain and a second critical accumulated strain associated therewith, the algebraic sum of said first and second accumulated strain being less than said second critical accumulated strain; wherein said first and second critical accumulated strain for a given material equals a strain of said material multiplied by CT for a given material, where, CT=(0.4374/f)[In(CT/4)+1], where f is an average lattice mismatch of said active layer normalized to a lattice constant of 5.65 Å; and wherein said light emitting device has an emission wavelength of at least 1.3 μm.
- 129. A light emitting device having at least a substrate and an active region, said light emitting device comprising:
said substrate comprising having a substrate lattice constant between 5.63 Å and 5.67 Å; a first strained layer having a lattice constant smaller than said substrate lattice constant and being disposed between said substrate and said active region; said active region comprising at least one pseudomorphic light emitting active layer disposed above said substrate, said active layer comprising at least In, and Ga, said active layer comprising at least two strained layers, and a third layer disposed between said two strained layers, said active layer having a second accumulated strain and a second critical accumulated strain associated therewith, the algebraic sum of said first and second accumulated strains being less than said second critical accumulated strain; and wherein said light emitting device has an emission wavelength of at least 1.3 μm.
- 130. The device recited in claim 129, wherein said active layer has a concentration of In and Sb of 25% or greater of a semiconductor material in said active layer.
- 131. The device recited in claim 129, wherein said active layer has a thickness less than 2.5 times CT, where: where: CT=(0.4374/f)[In(CT/4)+1], wherein f is an average lattice mismatch of said active layer normalized to a lattice constant of 5.65 Å.
- 132. The device recited in claim 129, wherein said first strained layer comprises GaAs1-zPz with 0.1≦z≦1.0.
- 133. The device recited in claim 129, further comprising a second strained layer disposed above said active region.
- 134. The device recited in claim 133, wherein said second strained layer comprises GaAs1-zPz with 0.1≦z≦1.0.
- 135. The device recited in claim 129, wherein said substrate comprises GaAs.
- 136. The device recited in claim 129, wherein said substrate consists essentially of GaAs.
- 137. The device recited in claim 129, wherein said substrate has an orientation between 0° and 5° off the (001) orientation.
- 138. The device recited in claim 129, wherein said active layers are integral multiples of atomic monolayers.
- 139. The device recited in claim 129, wherein at least two adjacent superlattice layers differ in at least one constituent element by at least 15%.
- 140. The device recited in claim 129, wherein said superlattice comprises (InAs)2(GaAs)1(InAs)2(GaAs)1(InAs)2, wherein InAs and GaAs comprise at least 90% of the (InAs) and (GaAs) layers, respectively.
- 141. The device recited in claim 129, further comprising:
a first conductive layer having a first conductivity type, said first conductive layer disposed in electrical communication with said active layer; a second conductive layer having a second conductivity type, said second conductive layer being disposed above said active layer and in electrical communication therewith; and electrical communication means for providing electrical current to said active layer.
- 142. The device recited in claim 141, further comprising a bottom mirror disposed below said radiation-emitting layer and a top mirror disposed above said radiation-emitting layer, said top and bottom mirrors defining an optical cavity having a cavity resonance at a resonance wavelength corresponding to a resonance energy; said resonance wavelength in μm, as measured in vacuum, being equal to 1.24 divided by said resonance energy, in electron volts.
- 143. The device recited in claim 142, wherein said active region has a peak transition wavelength of at least 1.24 μm and said resonance wavelength exceeds a peak transition wavelength of said active region by at least 0.010 μm.
- 144. The device recited in claim 141, further comprising a grating layer disposed above said second conductive layer, said grating layer having grating lines extending at least partially or completely across said active region to form a grating, said grating defining an optical cavity having a cavity resonance at a resonance wavelength corresponding to a resonance energy; said resonance wavelength in μm, as measured in vacuum, being equal to 1.24 divided by said resonance energy, in electron volts.
- 145. The device recited in claim 144, wherein said grating lines are shifted by approximately least one quarter wave or a multiple thereof to form a phase shift grating.
- 146. A light emitting device having at least a substrate and an active region, said light emitting device comprising:
said substrate comprising having a substrate lattice constant between 5.63 Å and 5.67 Å; a first strained layer disposed between said substrate and said active region, said first strained layer having a first accumulated strain and a first critical accumulated strain associated therewith, said first accumulated strain being less than said first critical accumulated strain; said active region comprising at least one pseudomorphic light emitting active layer disposed above said substrate, said active layer comprising at least In, Ga and As, said active layer comprises at least two strained layers, and a third layer disposed between said two strained layers, forming a superlattice having an average sum of In and Sb concentrations in said superlattice at 25% or greater of a semiconductor material in said active layer, said active layer having a second accumulated strain and a second critical accumulated strain associated therewith, said second accumulated strain being less than said second critical accumulated strain; wherein said first and second critical accumulated strain for a given material equals a strain of said material multiplied by CT for a given material, where: CT=(0.4374/f)[In(CT/4)+1], where f is an average lattice mismatch of said active layer normalized to a lattice constant of 5.65 Å; and wherein said light emitting device has an emission wavelength of at least 1.3 μm.
- 147. A light emitting device having at least a substrate and an active region, said light emitting device comprising:
said substrate comprising having a substrate lattice constant between 5.63 Å and 5.67 Å and having a growth plane which has an orientation within 15° of (111); said active region comprising at least one pseudomorphic light emitting active layer disposed above said substrate, said active layer comprising at least In, Ga and As, said active layer having a thickness equal to or less than twice a respective CT, where: CT=(0.4374/f)[In(CT/4)+1], where f is an average lattice mismatch of said active layer normalized to a lattice constant of 5.65 Å; wherein said active layer has an average sum of In and Sb concentrations of equal to or greater than 25% or greater of a semiconductor material in said active layer; and wherein said light emitting device has an emission wavelength of at least 1.3 μm.
- 148. The device recited in claim 147, further comprising:
a first conductive layer having a first conductivity type, said first conductive layer disposed in electrical communication with said active layer; a second conductive layer having a second conductivity type, said second conductive layer being disposed above said active layer and in electrical communication therewith; and electrical communication means for providing electrical current to said active layer.
- 149. The device recited in claim 148, further comprising a bottom mirror disposed below said radiation-emitting layer and a top mirror disposed above said radiation-emitting layer, said top and bottom mirrors defining an optical cavity having a cavity resonance at a resonance wavelength corresponding to a resonance energy; said resonance wavelength in μm, as measured in vacuum, being equal to 1.24 divided by said resonance energy, in electron volts.
- 150. The device recited in claim 149, wherein said bottom mirror comprises alternating high-index layers and low-index layers.
- 151. The device recited in claim 150, wherein said low index layers comprise oxidized material.
- 152. The device recited in claim 149, wherein said top mirror, comprises alternating low index layers and high index layers.
- 153. The device recited in claim 152, wherein said low index layers are selected from the group consisting of: oxidized material, low-index dielectric material, relatively-low-index semiconductor material, and any combination thereof.
- 154. The device recited in claim 153, wherein said high index layers are selected from the group consisting of: high-index dielectric material, high-index semiconductor material and any combination thereof.
- 155. The device recited in claim 149, further comprising an aperture disposed between said active region and said top mirror, said aperture having a first and second region.
- 156. The device recited in claim 155, wherein said first region exhibits electrical resistance; and second region and has an electrical resistance lower that said first region.
- 157. The device recited in claim 155, wherein said first region is oxidized and said second region is oxidized less than said first region.
- 158. The device recited in claim 149, wherein said active region has a peak transition wavelength of at least 1.24 μm and said resonance wavelength exceeds a peak transition wavelength of said active region by at least 0.010 μm.
- 159. The device recited in claim 148, further comprising a grating layer disposed above said second conductive layer, said grating layer having grating lines extending at least partially or completely across said active region to form a grating, said grating defining an optical cavity having a cavity resonance at a resonance wavelength corresponding to a resonance energy; said resonance wavelength in μm, as measured in vacuum, being equal to 1.24 divided by said resonance energy, in electron volts.
- 160. The device recited in claim 159, wherein said grating lines are shifted by approximately least one quarter wave or a multiple thereof to form a phase shift grating.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application makes reference to the following co-pending U.S. patent applications. The first application is U.S. App. Ser. No. 08/547,165, entitled “Conductive Element with Lateral Oxidation Barrier,” filed Dec. 18, 1995. The second application is U.S. App. Ser. No. 08/659,942, entitled “Light Emitting Device Having an Electrical Contact Through a Layer containing Oxidized Material,” filed Jun. 7, 1996. The third application is U.S. App. Ser. No. 08/686,489 entitled “Lens Comprising at Least One Oxidized Layer and Method for Forming Same,” filed Jul. 25, 1996. The fourth application is U.S. App. Ser. No. 08/699,697 entitled “Aperture comprising an Oxidized Region and a Semiconductor Material,” filed Aug. 19, 1996. These applications are hereby incorporated by reference.
Divisions (6)
|
Number |
Date |
Country |
Parent |
09602776 |
Jun 2000 |
US |
Child |
10373566 |
Feb 2003 |
US |
Parent |
09320945 |
May 1999 |
US |
Child |
09602776 |
Jun 2000 |
US |
Parent |
09115689 |
Jul 1998 |
US |
Child |
09320945 |
May 1999 |
US |
Parent |
08721769 |
Sep 1996 |
US |
Child |
09115689 |
Jul 1998 |
US |
Parent |
08721589 |
Sep 1996 |
US |
Child |
08721769 |
Sep 1996 |
US |
Parent |
08721590 |
Sep 1996 |
US |
Child |
08721589 |
Sep 1996 |
US |