being a silicide layer

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H01L29/4975

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/4975being a silicide layer

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structures including middle-of-line (MOL) capacitance...
- Patent number 12,237,368
- Issue date Feb 25, 2025
- Adeia Semiconductor Solutions LLC
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for fabricating the same
- Patent number 12,211,845
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Ku Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,211,836
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicide gate fill structure
- Patent number 12,183,787
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies having vertically-spaced channel material seg...
- Patent number 12,185,544
- Issue date Dec 31, 2024
- John D. Hopkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicide gate fill structure
- Patent number 12,176,392
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin transistors and manufacturing method...
- Patent number 12,170,282
- Issue date Dec 17, 2024
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,154,902
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold adjustment for quantum dot array devices with metal sourc...
- Patent number 12,107,144
- Issue date Oct 1, 2024
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage FET
- Patent number 12,100,734
- Issue date Sep 24, 2024
- Murata Manufacturing Co., Ltd.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices including gate barrier layers
- Patent number 12,051,721
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 12,021,082
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,009,429
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact structures and cross-coupled contact structures for tr...
- Patent number 12,002,869
- Issue date Jun 4, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial metal grain size control to improve CMP loading effect
- Patent number 11,978,781
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Anhao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with backside power rail and methods of fabric...
- Patent number 11,955,552
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching platinum-containing thin film using protective cap layer
- Patent number 11,929,423
- Issue date Mar 12, 2024
- Texas Instruments Incorporated
- Sebastian Meier
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Metal oxide semiconductor having epitaxial source drain regions and...
- Patent number 11,901,454
- Issue date Feb 13, 2024
- Sony Group Corporation
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,888,064
- Issue date Jan 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitors
- Patent number 11,856,790
- Issue date Dec 26, 2023
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective capping processes and structures formed thereby
- Patent number 11,830,742
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chien Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin-type field effect transistor
- Patent number 11,824,057
- Issue date Nov 21, 2023
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an upper epitaxial layer contacting two...
- Patent number 11,798,941
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,728,332
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Connector via structures for nanostructures and methods of forming...
- Patent number 11,682,730
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate structure and methods thereof
- Patent number 11,682,669
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Chi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having blocks of source and drain silicides near the cha...
- Patent number 11,631,739
- Issue date Apr 18, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Fabrice Nemouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced channel strain to reduce contact resistance in NMOS FET de...
- Patent number 11,574,907
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,552,179
- Issue date Jan 10, 2023
- Samsung Electronics Co., Ltd.
- Hyunsu Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric capacitor, ferroelectric field effect transistor, and...
- Patent number 11,552,086
- Issue date Jan 10, 2023
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Low Leakage FET
- Publication number 20250072062
- Publication date Feb 27, 2025
- MURATA MANUFACTURING CO., LTD.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040207
- Publication date Jan 30, 2025
- Rohm Co., Ltd.
- Yusuke SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-SILICIDE STACKED FIELD-EFFECT TRANSISTORS
- Publication number 20250031440
- Publication date Jan 23, 2025
- International Business Machines Corporation
- Domingo Ferrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTOR HAVING TRENCH INTERNAL SPAC...
- Publication number 20250031418
- Publication date Jan 23, 2025
- Samsung Electronics Co., LTD
- Rock-Hyun BAEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked Multi-Gate Device With Reduced Contact Resistance And Metho...
- Publication number 20250031419
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Kan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods Of Forming Contact Structure In Semiconductor Devices
- Publication number 20250022925
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fan Hsuan CHIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE CONTACT FOR 3D MEMORY WITH CMOS BONDED ARRAY
- Publication number 20250022935
- Publication date Jan 16, 2025
- Applied Materials, Inc.
- Chang Seok Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015202
- Publication date Jan 9, 2025
- Rohm Co., Ltd.
- Mitsuhide KORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395811
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yuan LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20240387679
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ching Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Semiconductor Devices Including Gate Barrier Layers
- Publication number 20240355880
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240339498
- Publication date Oct 10, 2024
- Samsung Electronics Co., Ltd.
- Jong Ryeol YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SILICIDE FOR STACKED MULTI-GATE DEVICE
- Publication number 20240297228
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yip Loh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240290887
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-AROUND SILICIDE LAYER
- Publication number 20240290849
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Huan Jao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-VT INTEGRATION SCHEME FOR SEMICONDUCTOR DEVICES
- Publication number 20240266414
- Publication date Aug 8, 2024
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH BACKSIDE POWER RAIL AND METHODS OF FABRIC...
- Publication number 20240222507
- Publication date Jul 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Zhen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING PLATINUM-CONTAINING THIN FILM USING PROTECTIVE CAP LAYER
- Publication number 20240222470
- Publication date Jul 4, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Sebastian Meier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...
- Publication number 20240204102
- Publication date Jun 20, 2024
- SONY GROUP CORPORATION
- Yasushi Tateshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING ALIGNMENT KEY
- Publication number 20240204068
- Publication date Jun 20, 2024
- Samsung Electronics Co., Ltd.
- HYUNGJOO NA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...
- Publication number 20240047461
- Publication date Feb 8, 2024
- SONY CORPORATION
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230395698
- Publication date Dec 7, 2023
- Powerchip Semiconductor Manufacturing Corporation
- Tien-Lu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL METAL GRAIN SIZE CONTROL TO IMPROVE CMP LOADING EFFECT
- Publication number 20230387244
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Anhao CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230343781
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Wen CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES INCLUDING MIDDLE-OF-LINE (MOL) CAPACITANCE...
- Publication number 20230299134
- Publication date Sep 21, 2023
- TESSERA LLC
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONNECTOR VIA STRUCTURES FOR NANOSTRUCTURES AND METHODS OF FORMING...
- Publication number 20230275154
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Li-Zhen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONNECTOR VIA STRUCTURES FOR NANOSTRUCTURES AND METHODS OF FORMING...
- Publication number 20230275155
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Li-Zhen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...
- Publication number 20230187447
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chang LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Capacitor, Ferroelectric Field Effect Transistor, and...
- Publication number 20230121892
- Publication date Apr 20, 2023
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Leakage FET
- Publication number 20230094494
- Publication date Mar 30, 2023
- pSemi Corporation
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS

being a silicide layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structures including middle-of-line (MOL) capacitance...

Semiconductor device and a method for fabricating the same

Semiconductor device and manufacturing method thereof

Semiconductor device with silicide gate fill structure

Integrated assemblies having vertically-spaced channel material seg...

Semiconductor device with silicide gate fill structure

Semiconductor device with fin transistors and manufacturing method...

Semiconductor device and manufacturing method thereof

Threshold adjustment for quantum dot array devices with metal sourc...

Low leakage FET

Methods of forming semiconductor devices including gate barrier layers

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Semiconductor device and method

Gate contact structures and cross-coupled contact structures for tr...

Partial metal grain size control to improve CMP loading effect

Semiconductor device with backside power rail and methods of fabric...

Etching platinum-containing thin film using protective cap layer

Metal oxide semiconductor having epitaxial source drain regions and...

Semiconductor device and method

Ferroelectric capacitors

Selective capping processes and structures formed thereby

Semiconductor device with fin-type field effect transistor

Semiconductor device having an upper epitaxial layer contacting two...

Semiconductor device and manufacturing method thereof

Connector via structures for nanostructures and methods of forming...

Metal gate structure and methods thereof

Transistor having blocks of source and drain silicides near the cha...

Enhanced channel strain to reduce contact resistance in NMOS FET de...

Semiconductor device

Ferroelectric capacitor, ferroelectric field effect transistor, and...

Patents Applicationslast 30 patents

Low Leakage FET

SEMICONDUCTOR DEVICE

MULTI-SILICIDE STACKED FIELD-EFFECT TRANSISTORS

GATE-ALL-AROUND FIELD EFFECT TRANSISTOR HAVING TRENCH INTERNAL SPAC...

Stacked Multi-Gate Device With Reduced Contact Resistance And Metho...

Methods Of Forming Contact Structure In Semiconductor Devices

SOURCE CONTACT FOR 3D MEMORY WITH CMOS BONDED ARRAY

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

Methods of Forming Semiconductor Devices Including Gate Barrier Layers

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SELECTIVE SILICIDE FOR STACKED MULTI-GATE DEVICE

SEMICONDUCTOR DEVICES

WRAP-AROUND SILICIDE LAYER

MULTI-VT INTEGRATION SCHEME FOR SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE WITH BACKSIDE POWER RAIL AND METHODS OF FABRIC...

ETCHING PLATINUM-CONTAINING THIN FILM USING PROTECTIVE CAP LAYER

METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND...

SEMICONDUCTOR DEVICE COMPRISING ALIGNMENT KEY

SEMICONDUCTOR DEVICE WITH FIN TRANSISTORS AND MANUFACTURING METHOD...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

PARTIAL METAL GRAIN SIZE CONTROL TO IMPROVE CMP LOADING EFFECT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURES INCLUDING MIDDLE-OF-LINE (MOL) CAPACITANCE...

CONNECTOR VIA STRUCTURES FOR NANOSTRUCTURES AND METHODS OF FORMING...

CONNECTOR VIA STRUCTURES FOR NANOSTRUCTURES AND METHODS OF FORMING...

ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DE...

Ferroelectric Capacitor, Ferroelectric Field Effect Transistor, and...

Low Leakage FET