This invention relates to semiconductor devices and processing and more specifically relates to a low cost process for the manufacture of a fast recovery diode and to a novel fast recovery diode structure.
Fast recovery diodes are well known. The processes used for the manufacture of such devices frequently employ cellular and/or stripe and/or trench technologies in a silicon die with electron irradiation for lifetime killing. Such devices use a high mask count and are relatively expensive.
It would be desirable to make a fast recovery diode (FRED) with a reduced mask count and lifetime killing but with equal or better characteristics to those of existing FRED devices.
In accordance with the invention a novel FRED is formed using a simple single large area junction with platinum lifetime killing. A simplified termination structure is employed using a simple field plate termination at low voltages (200 volts); amorphous silicon on the field plate at intermediate voltage (400 volts); and plural floating guard rings and an equipotential ring in the cutting street in a higher voltage (600 volts) device. Three, four and five masks are used for the 200 volt, 400 volt and 600 volt devices respectively. Excellent characteristics, equivalent to or better than those of existing FREDs with higher mask counts, are obtained.
The novel structure of
In order to withstand 400 volts, the device of
The device of
The process for the devices of
In each of
Although the present invention has been described in relation to particular embodiments thereof, many other variations and modifications and other uses will become apparent to those skilled in the art.
This application is a continuation of U.S. patent application Ser. No. 10/115,757, filed Apr. 2, 2002, now abandoned which is based upon and claims priority to U.S. Provisional Application Ser. No. 60/280,972, filed Apr. 2, 2001.
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Number | Date | Country |
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1 033 756 | Sep 2000 | EP |
2000082825 | Mar 2000 | JP |
2000114550 | Apr 2000 | JP |
2002033326 | Jan 2002 | JP |
Number | Date | Country | |
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20060017130 A1 | Jan 2006 | US |
Number | Date | Country | |
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60280972 | Apr 2001 | US |
Number | Date | Country | |
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Parent | 10115757 | Apr 2002 | US |
Child | 11233760 | US |