Claims
- 1. A method of fabricating a high frequency amplifying device comprising the steps of:
- forming a semi-insulating InP substrate having an n-type InP active region formed thereon from any suitable group III-V compound semi-conductor;
- combining a p-channel MISFET and a n-p-n HBT on said semi-insulating substrate;
- electrically isolating said p-channel MISFET and said n-p-n HBT by implanting isolation regions in said active region;
- forming a p+ type InGaAs layer above said active region;
- forming an n-type InP layer and an SiO.sub.2 layer above said p+ type InGaAs layer;
- forming a TiAu layer above said SiO.sub.2 layer and providing a terminal for V.sub.in ;
- forming an AuGeNi layer above said active region, and providing a terminal for ground; and
- forming an AuGeNi layer above said n-type InP layer and providing a terminal for V.sub.cc.
- 2. A method as claimed in claim 1 comprising the step of forming said active region by ion implantation followed by annealing.
- 3. A method as claimed in claim 1 comprising the step of forming said active region by Epitaxial growth.
Parent Case Info
This application is a division of application Ser. No. 593,459, filed Oct. 5, 1990, now U.S. Pat. No. 5,086,282.
US Referenced Citations (22)
Divisions (1)
|
Number |
Date |
Country |
Parent |
593459 |
Oct 1990 |
|