Claims
- 1. A field effect transistor structure, comprising:
- a thin film transistor comprising a diffusion region and a channel;
- a gate dielectric layer disposed over the channel and over a first portion of the diffusion region; and a transistor gate electrode disposed over a portion of the gate dielectric layer, above and substantially self-aligned with the channel; and
- a contact layer of transistor gate electrode-material disposed above and adjacent at least some of a second portion of the diffusion region; wherein the contact layer is formed simultaneously with the transistor gate electrode and connects said second portion with a gate of another transistor.
- 2. The structure of claim 1, wherein said contact layer is in direct contact with at least some of the second portion of the diffusion region, and said another transistor comprises a thin film transistor.
- 3. The structure of claim 2, wherein said second portion is adjacent said first portion and comprises a buried contact.
- 4. A field effect transistor structure comprising:
- a thin film transistor comprising a diffusion region and a channel;
- a gate dielectric layer disposed over the channel and over a first portion of the diffusion region;
- a transistor gate electrode disposed over a portion of the gate dielectric layer, above and substantially self-aligned with the channel; and
- a contact layer of transistor gate electrode-material in direct contact with at least some of a second portion of the diffusion region and connecting said second portion of the diffusion region with a gate of another transistor.
- 5. The structure of claim 4 wherein said second portion is adjacent said first portion, and the contact layer is formed simultaneously with the transistor gate electrode.
- 6. The structure of claim 4 wherein said another transistor comprises a thin film transistor.
Parent Case Info
This application is a continuation of application Ser. No. 08/536,725 filed Sep. 29, 1995 which application is now U.S. Pat. No. 5,670,812.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
5156987 |
Sandhu et al. |
Oct 1992 |
|
5670812 |
Adler et al. |
Sep 1997 |
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Continuations (1)
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Number |
Date |
Country |
Parent |
536725 |
Sep 1995 |
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