Claims
- 1. A matching network for performing frequency tuned matching between a source and a load, comprising:
a first capacitor and first inductor, having fixed values, coupled in series from an input port to an output port; a second capacitor and second inductor, having fixed values, coupled in series from one of said input port and output port to ground; and where the input port is adapted to receive a variable frequency RF signal and the output port is adapted to be coupled to a time-variant load impedance.
- 2. The matching network of claim 1, wherein said first capacitor and first inductor values are related by a first mathematic relationship, and said second capacitor and second inductor values are related by a second mathematic relationship.
- 3. The matching network of claim 2, wherein said first mathematical relationship is the first inductor having a value NL, where N is a number greater than 1 and L is an inductance value in Henries, and the first capacitor having a value 1/(N−1)jωo2L, where too is a nominal frequency of operation for the matching network.
- 4. The matching network of claim 3, wherein said second mathematical relationship is the second capacitor having a value C/N, where C is a capacitance value in Farads, and the second inductor having a value (N−1)/jωo2C.
- 5. The matching network of claim 3, wherein said second mathematical relationship is the second capacitor having a value 1/(N−1)jωo2L, and the second inductor having a value NL.
- 6. The matching network of claim 2, wherein:
said first mathematical relationship is the first inductor having a value (N−1)/jωo2C, where N is a number greater than 1, ωo is a nominal frequency of operation for the matching network, and C is a capacitance value in Farads; and said first capacitor having a value (1/N)C, where C is a capacitance value in Farads.
- 7. The matching network of claim 6, wherein said second mathematical relationship is the second capacitor having a value C/N, and the second inductor having a value (N−1)/jωo2C.
- 8. The matching network of claim 6, wherein said second mathematical relationship is the second capacitor having a value 1/(N−1)jωo2L, and the second inductor having a value NL, where L is an inductance value in Henries.
- 9. Apparatus for processing semiconductor wafers comprising:
a reactor having a pedestal for supporting a wafer and a plasma generating element for coupling RF energy to a gas to form a plasma proximate the wafer; a variable frequency source, where the variable frequency source is dynamically tuned to maintain an impedance match between the variable frequency source and the plasma generating element; and a matching network, coupled in series with said reactor and the plasma generating element, said matching network comprising:
a first capacitor and a first inductor, having fixed values, and connected in series between said reactor and the plasma generating element; and a second capacitor serially connected to a second inductor, having fixed values, where said serially connected second capacitor and second inductor are shunted to ground with respect to one of said reactor and variable frequency source.
- 10. The apparatus of claim 9, wherein the plasma generating element is an electrode that forms a cathode in the reactor.
- 11. The apparatus of claim 9, wherein the electrode is a component of the pedestal.
- 12. The apparatus of claim 9, wherein the electrode is a component of a lid for the reactor.
- 13. The apparatus of claim 9, wherein the plasma generating element is an antenna positioned proximate the reactor.
- 14. The apparatus of claim 6 wherein said series connected capacitor and inductor are connected between the variable frequency source and the plasma generating element.
- 15. The apparatus of claim 11, wherein a value of the first capacitor and a value of the first inductor are related by a first mathematic relationship, and a value of the second capacitor and a value of the second inductor are related by a second mathematic relationship.
- 16. The apparatus of claim 15, wherein said first mathematical relationship is the first inductor having a value NL, where N is a number greater than 1 and L is an inductance value in Henries, and the first capacitor having a value 1/(N−1)jωo2L, where ωo is a nominal frequency of operation for the matching network.
- 17. The apparatus of claim 16, wherein said second mathematical relationship is the second capacitor having a value C/N, where C is a capacitance value in Farads, and the second inductor having a value (N−1)/jωo2C.
- 18. The apparatus of claim 16, wherein said second mathematical relationship is the second capacitor having a value 1/(N−1)jωo2L, and the second inductor having a value NL.
- 19. The apparatus of claim 15, wherein:
said first mathematical relationship is the first inductor having a value (N−1)/jωo2C, where N is a number greater than 1, ωo is a nominal frequency of operation for the matching network, and C is a capacitance value in Farads; and said first capacitor having a value (1/N)C, where C is a capacitance value in Farads.
- 20. The apparatus of claim 19, wherein said second mathematical relationship is the second capacitor having a value C/N, and the second inductor having a value (N−1)/jωo2C.
- 21. The apparatus of claim 19, wherein said second mathematical relationship is the second capacitor having a value 1/(N−1)jωo2L, and the second inductor having a value NL, where L is an inductance value in Henries.
- 22. A method of increasing the impedance range of a matching network comprising:
replacing each single series component having a component value in an original matching network with a series connected first capacitor and first inductor, where the values of the series connected first capacitor and first inductor are related to the component value by a first mathematical relationship; and replacing each single shunt component having a component value in an original matching network with a series connected second capacitor and second inductor, where the values of the series connected second capacitor and second inductor are related to the component value by a second mathematical relationship.
- 23. The method of claim 22, wherein the series connected first capacitor and first inductor are connected from an input port to an output port of the matching network;
and the series connected second capacitor and second inductor are shunted to ground with respect to one of said input port and said output port of said matching network.
- 24. The apparatus of claim 22, wherein said first mathematical relationship is the first inductor having a value NL, where N is a number greater than 1 and L is an inductance value in Henries, and the first capacitor having a value 1/(N−1)jωo2L, Where ωo is a nominal frequency of operation for the matching network.
- 25. The apparatus of claim 24, wherein said second mathematical relationship is the second capacitor having a value C/N, where C is a capacitance value in Farads, and the second inductor having a value (N−1)/jωo2C.
- 26. The apparatus of claim 25, wherein said second mathematical relationship is the second capacitor having a value 1/(N−1)jωo2L, and the second inductor having a value NL.
- 27. The apparatus of claim 22, wherein:
said first mathematical relationship is the first inductor having a value (N−1)/jωo2C, where N is a number greater than 1, ωo is a nominal frequency of operation for the matching network, and C is a capacitance value in Farads; and said first capacitor having a value (1/N)C, where C is a capacitance value in Farads.
- 28. The apparatus of claim 27, wherein said second mathematical relationship is the second capacitor having a value C/N, and the second inductor having a value (N−1)/jωo2C.
- 29. The apparatus of claim 27, wherein said second mathematical relationship is the second capacitor having a value 1/(N−1)jωo2L, and the second inductor having a value NL, Where L is an inductance value in Henries.
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This patent application claims the benefit of U.S. Provisional Application, serial No. 60/402,405, filed Aug. 9, 2002, the contents of which are incorporated by reference herein.
Provisional Applications (1)
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Number |
Date |
Country |
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60402405 |
Aug 2002 |
US |