The present invention relates generally to a front opening unified pod, and particularly to a front opening unified pod having inlet and outlet.
The conventional wafer carrier named Standard mechanical interface (SMIF) is used for storing and transferring 8-inch wafers. Nonetheless, with the advancement in semiconductor manufacturing technologies, the size of wafer has increased to 12 or even 18 inches. For fitting larger wafers, the wafer carrier for such large sized wafers is different from the one for 8-inch wafers and is called front opening unified pod (FOUP). In the FOUP, wafers are maintained in an airtight space for avoiding contact of dust, moisture, oxygen, and molecular pollutants with the wafer surfaces.
The FOUP according to the prior art has two inlets and two outlets. When gas enters the FOUP from the two inlets, most gas is mixed with the surrounding moisture and oxygen of the two inlets and then diffuses and flows toward the outlets. In order to purge the moisture and oxygen surrounding the region away from the inlets, more gas has to be filled continuously. The more the gas is filled, the more moisture and oxygen can be mixed and replaced, which means better purging efficiency. On the contrary, the fewer the gas is filled, the fewer moisture and oxygen can be mixed, leading to lower purging efficiency.
The filled gas surrounding the region of the two inlets is more. Thereby, more moisture and oxygen surrounding this region can be mixed and replaced. On the contrary, the filled gas surrounding the region away from the two inlets is more. Thereby, fewer moisture and oxygen surrounding this region can be mixed and replaced and thus leading to lower purging efficiency around this region. For solving this problem, more gas has to be filled continuously to the FOUP until the humidity therein reduces to the environment suitable for semiconductor fabrication. This will consume much time and energy. In addition, the removing efficiency for the moisture and oxygen in an FOUP is inferior; the humidity in the FOUP cannot be lowered rapidly.
Accordingly, the present invention provides an FOUP having three inlets and one inlet. Thereby, the removing efficiency for the moisture and oxygen in an FOUP is enhanced. Hence, the humidity in the FOUP can be lowered rapidly.
An objective of the present invention is to provide an FOUP having inlet and outlet. The FOUP has three inlets and one outlet. Two inlets are located at the rear end of the FOUP; one inlet and the outlet are located at the front end thereof. Thereby, the mixing region for the filled gas with the moisture and oxygen in the FOUP is increased and thus enhancing the removing efficiency of the moisture and oxygen in the FOUP. Accordingly, the purging efficiency of the FOUP is improved.
Another objective of the present invention is to provide an FOUP having inlet and outlet. The FOUP has three inlets and one outlet. Thereby, the removing efficiency of the moisture and oxygen in the FOUP is enhanced. The humidity in the FOUP can be reduced effectively so that the internal environment of the FOUP can reach rapidly the condition suitable for semiconductor fabrication. Hence, the subsequent semiconductor processes can be performed and the preparation time for the processes can be shortened.
Still another objective of the present invention is to provide an FOUP having inlet and outlet. The FOUP has three inlets and one outlet. Thereby, the removing efficiency of the moisture and oxygen in the FOUP is enhanced. In addition, the time for filling gas in the FOUP is shortened.
The present invention provides an FOUP having inlet and outlet, which comprises a door and a case having an opening. The door is disposed at the case and seals the opening. The bottom of the case comprises a first side, a second side, two first inlets, a second inlet, and an outlet. The first side is not adjacent to the opening. The second side is adjacent to the opening. The two first inlets are disposed on the first side; the second inlet is disposed on the second side and corresponds to the two first inlets, respectively; and the outlet is disposed on the second side and corresponds to the two first inlets and the second inlet, respectively.
In order to make the structure and characteristics as well as the effectiveness of the present invention to be further understood and recognized, the detailed description of the present invention is provided as follows along with embodiments and accompanying figures.
The FOUP according to the prior art has two inlets and two outlets. When gas enters the FOUP from the two inlets, most gas is mixed with the surrounding moisture and oxygen of the two inlets and then diffuses and flows toward the outlets. In order to purge the moisture and oxygen surrounding the region away from the inlets, more gas has to be filled continuously. The more the gas is filled, the more moisture and oxygen can be mixed and replaced, which means better purging efficiency. On the contrary, the fewer the gas is filled, the fewer moisture and oxygen can be mixed, leading to lower purging efficiency.
The filled gas surrounding the region of the two inlets is more. Thereby, more moisture and oxygen surrounding this region can be mixed and replaced. On the contrary, the filled gas surrounding the region away from the two inlets is more. Thereby, fewer moisture and oxygen surrounding this region can be mixed and replaced and thus leading to lower purging efficiency around this region. For solving this problem, more gas has to be filled continuously to the FOUP until the environmental condition, such as humidity, therein reduces to the environment suitable for semiconductor fabrication. This method cannot remove the moisture and oxygen in the FOUP. Besides, the time required for filling gas in the FOUP is increased.
The bottom 112 of the FOUP 1 according to the present embodiment has a first side 1121 and a second side 1122. The first side 1121 is not adjacent to the entry 117 of the case 11. Namely, the first side 1121 is located near the rear end of the FOUP 1. The second side 1122 is adjacent to the entry 117 of the case 11 and corresponds to the first side 1121. Namely, the second side 1122 is near the front end of the FOUP 1. The bottom 112 of the FOUP 1 further includes two first inlets 1123, a second inlet 1124, and an outlet 1125. The two first inlets 1123 are disposed on the first side 1121 of the bottom 112 of the case 11. The second inlet 1124 is disposed on the second side 1122 of the bottom 112 of the case 11 and corresponds to the two first inlets 1123, respectively. The outlet 1125 is disposed on the second side 1122 of the bottom 112 of the case 11 and corresponds to the two first inlets 1123 and the second inlet 1124, respectively. The two first inlets 1123 and the second inlet 1124 have inlet devices 2, such as inlet valves; the outlet 1125 has an outlet device 3, such an outlet valve. The first inlets 1123, the second inlet 1124, or the outlet 1125 can include a plurality of sub-inlets 1126 or sub-outlets, as shown in
In order to reduce the moisture and oxygen in the FOUP 1 with the plurality of wafers 12 loaded, the FOUP 1 is first disposed on gas-filling equipment (not shown in the figure). The gas-filling equipment is connected to the two first inlets 1123 and the second inlet 1124 of the FOUP 1 and fills gas into the FOUP 1 via the two first inlets 1123 and the second inlet 1124.
Presently, the maximum size of the FOUP 1 is 12 inches. In the future, the size of the FOUP 1 will be extended to 18 inches. It takes about 3 to 15 minutes to fill a 12-inch FOUP 1 completely via the inlet and outlet disposal according to the prior art. It will take triple the time required for filling a 12-inch FOUP 1 to fill a 18-inch FOUP 1 via the inlet and outlet disposal according to the prior art, leading to increases in costs and time. If the FOUP 1 adopts the inlet and outlet disposal according to the present embodiment, regardless of the size of the FOUP 1, the time required for filling gas to the FOUP 1 could all be shortened.
Refer again to
As the line width of semiconductor devices shrinks, the filtering requirement for particles becomes more demanding. For filtering smaller particles, gas-pressure loss occurs in the gas entering pipes. Thereby, the minimum diameter of the inlets is 15 mm. Accordingly, the minimum diameter of the first inlets 1123 and the second inlet 1124 according to the present embodiment is 15 mm. When the size of the FOUP 1 is 18 inches, the diameters of the two first inlets 1123 and the second inlet 1124 can be expanded for filling gas with smaller flow rate without affecting the time required for filling the FOUP 1. Hence, the problem described above can be solved.
Furthermore, according to the present embodiment, as the gas just enters the FOUP 1, the mixing region of the gas with the moisture and oxygen in the FOUP 1 is increased, and thus improving the removing rate for the moisture and oxygen in the FOUP 1. If the FOUP 1 adopts the inlet and outlet disposal according to the prior art, as the gas just enters the FOUP 1, the gas first concentrates in the region surrounding the two inlets. The gas is first mixed with the moisture and oxygen in the region surrounding the two inlets. Then the gas moves toward the two outlets of the FOUP 1, namely, away from the two inlets. However, most gas has already mixed with the moisture and oxygen in the region surrounding the two inlets, leaving no excess gas for mixing with the moisture and oxygen in the region surrounding the two outlets. Thereby, the gas should be filled continuously to the FOUP 1. There will be no excess gas for mixing with the moisture and oxygen in the region surrounding the two outlets and purging until the gas is first mixed completely with the moisture and oxygen in the region surrounding the two inlets and purging in this region is finished.
To sum up, the present invention provides an FOUP having three inlets and one outlet. Thereby, when filling gas to the FOUP, the humidity in the FOUP can be reduced effectively, the purging efficiency of the FOUP is improved, and the time required for filling gas is shortened. Hence, the internal environment of the FOUP can reach rapidly the condition suitable for semiconductor fabrication and the preparation time for the processes can be shortened. According to the present invention, proper diameter for the inlets can be deployed according to the size of the FOUP in order to maintain filling gas to the FOUP at a small flow rate. If not so, the turbulence can cause the plurality of wafers stored in the FOUP to vibrate, move, rotate, and collide and thus producing polluting particles. At last, the yield of semiconductor devices is lowered. Even worse, the plurality of wafers 12 may crack.
Accordingly, the present invention conforms to the legal requirements owing to its novelty, nonobviousness, and utility. However, the foregoing description is only embodiments of the present invention, not used to limit the scope and range of the present invention. Those equivalent changes or modifications made according to the shape, structure, feature, or spirit described in the claims of the present invention are included in the appended claims of the present invention.
Number | Date | Country | Kind |
---|---|---|---|
101134067 | Sep 2012 | TW | national |