Claims
- 1. A gas supply system comprising a gas cabinet defining an enclosure including therein a gas dispensing manifold and one or more adsorbent-based gas storage and dispensing vessels mounted in the enclosure and joined in gas flow communication with the gas dispensing manifold.
- 2. A gas supply system according to claim 1, further comprising means for maintaining the enclosure under subatmospheric pressure conditions.
- 3. A gas supply system according to claim 1, further comprising means for connecting the gas dispensing manifold to a gas-consuming unit.
- 4. A gas supply system according to claim 1, wherein the gas contained in the gas storage and dispensing vessel(s) is at a pressure of from about 25 to about 800 torr.
- 5. A gas supply system according to claim 1, wherein the enclosure contains one gas storage and dispensing vessel.
- 6. A gas supply system according to claim 1, wherein the enclosure contains more than one gas storage and dispensing vessel.
- 7. A gas supply system according to claim 1, wherein each adsorbent-based gas storage and dispensing vessel in the enclosure comprises:
a storage and dispensing vessel constructed and arranged for holding a solid-phase physical sorbent medium, and for selectively flowing gas into and out of said vessel; a solid-phase physical sorbent medium disposed in said storage and dispensing vessel at an interior gas pressure; a sorbate gas physically adsorbed on said solid-phase physical sorbent medium; the gas dispensing manifold being coupled in gas flow communication with the storage and dispensing vessel, and constructed and arranged to provide, exteriorly of said storage and dispensing vessel, a pressure below said interior pressure, to effect desorption of sorbate gas from the solid-phase physical sorbent medium, and gas flow of desorbed gas through the dispensing assembly; wherein the solid-phase physical sorbent medium is devoid of trace components selected from the group consisting of water, metals, and oxidic transition metal species in a concentration which is sufficient to decompose the sorbate gas in said storage and dispensing vessel.
- 8. A gas supply system according to claim 7, wherein the solid-phase physical sorbent medium contains less than 350 parts-per-million by weight of trace components selected from the group consisting of water and oxidic transition metal species, based on the weight of the physical sorbent medium.
- 9. A gas supply system according to claim 7, wherein the solid-phase physical sorbent medium contains less than 100 parts-per-million by weight of trace components selected from the group consisting of water and oxidic transition metal species, based on the weight of the physical sorbent medium.
- 10. A gas supply system according to claim 7, wherein the solid-phase physical sorbent medium contains no more than 1 part-per-million by weight of trace components selected from the group consisting of water and oxidic transition metal species, based on the weight of the physical sorbent medium.
- 11. A gas supply system according to claim 7, wherein the solid-phase physical sorbent medium concentration of trace components selected from the group consisting of water and oxidic transition metal species, based on the weight of the physical sorbent medium, is insufficient to decompose more than 5% by weight of the sorbate gas after 1 year at 25° C. and said interior pressure.
- 12. A gas supply system according to claim 7, wherein the oxidic transition metal species are selected from the group consisting of oxides, sulfites and nitrates.
- 13. A gas supply system according to claim 7, wherein the sorbate gas is a hydride gas.
- 14. A gas supply system according to claim 7, wherein the sorbate gas is selected from the group consisting of silane, diborane, arsine, phosphine, chlorine, BCl3, BF3, B2D6, tungsten hexafluoride, (CH3)3Sb, hydrogen fluoride, hydrogen chloride, hydrogen iodide, hydrogen bromide, germane, ammonia, stibine, hydrogen sulfide, hydrogen selenide, hydrogen telluride, and NF3.
- 15. A gas supply system according to claim 7, wherein the sorbate gas is boron trifluoride.
- 16. A gas supply system comprising a gas cabinet defining an enclosure including therein a gas dispensing manifold and one or more adsorbent-based gas storage and dispensing vessels mounted in the enclosure and joined in gas flow communication with the gas dispensing manifold, each said adsorbent-based storage and dispensing vessel comprising:
a storage and dispensing vessel constructed and arranged for holding a solid-phase physical sorbent medium, and for selectively flowing gas into and out of said vessel; a solid-phase physical sorbent medium disposed in said storage and dispensing vessel at an interior gas pressure; a sorbate gas physically adsorbed on said solid-phase physical sorbent medium; the gas dispensing manifold being coupled in gas flow communication with the storage and dispensing vessel, and constructed and arranged to provide, exteriorly of said storage and dispensing vessel, a pressure below said interior pressure, to effect desorption of sorbate gas from the solid-phase physical sorbent medium, and gas flow of desorbed gas through the dispensing assembly; wherein the solid-phase physical sorbent medium concentration of trace components selected from the group consisting of water, metals, and oxidic transition metal species, based on the weight of the physical sorbent medium, is insufficient to cause decomposition of the sorbate gas resulting in more than a 5% rise in interior pressure after 1 week at 25° C. in said storage and dispensing vessel.
- 17. A gas supply system according to claim 16, wherein the solid-phase physical sorbent medium contains less than 350 parts-per-million by weight of trace components selected from the group consisting of water and oxidic transition metal species, based on the weight of the physical sorbent medium.
- 18. A gas supply system according to claim 16, wherein the solid-phase physical sorbent medium contains less than 100 parts-per-million by weight of trace components selected from the group consisting of water and oxidic transition metal species, based on the weight of the physical sorbent medium.
- 19. A gas supply system according to claim 16, wherein the solid-phase physical sorbent medium contains no more than 1 part-per-million by weight of trace components selected from the group consisting of water and oxidic transition metal species, based on the weight of the physical sorbent medium.
- 20. A gas supply system according to claim 16, wherein the solid-phase physical sorbent medium concentration of trace components selected from the group consisting of water and oxidic transition metal species, based on the weight of the physical sorbent medium, is insufficient to decompose more than 5% by weight of the sorbate gas after 1 year at 25° C. and said interior pressure, in said storage and dispensing vessel.
- 21. A gas supply system according to claim 16, wherein the oxidic transition metal species are selected from the group consisting of oxides, sulfites and nitrates.
- 22. A gas supply system according to claim 16, wherein the sorbate gas is a hydride gas.
- 23. A gas supply system according to claim 16, wherein the sorbate gas is selected from the group consisting of silane, diborane, arsine, phosphine, chlorine, BCl3, BF3, B2D6, tungsten hexafluoride, (CH3)3Sb, hydrogen fluoride, hydrogen chloride, hydrogen iodide, hydrogen bromide, germane, ammonia, stibine, hydrogen sulfide, hydrogen selenide, hydrogen telluride, and NF3.
- 24. A gas supply system according to claim 16, wherein the sorbate gas is boron trifluoride.
- 25. A boron trifluoride gas supply system comprising a gas cabinet defining an enclosure including therein a gas dispensing manifold and one or more adsorbent-based gas storage and dispensing vessels mounted in the enclosure and joined in gas flow communication with the gas dispensing manifold, each said adsorbent-based storage and dispensing vessel comprising:
a storage and dispensing vessel constructed and arranged for holding a solid-phase physical sorbent medium having a sorptive affinity for boron trifluoride, and for selectively flowing boron trifluoride into and out of said vessel; a solid-phase physical sorbent medium having a sorptive affinity for boron trifluoride, disposed in said storage and dispensing vessel at an interior gas pressure; boron trifluoride gas, physically adsorbed on said solid-phase physical sorbent medium; and the gas dispensing manifold coupled in gas flow communication with the storage and dispensing vessel, being constructed and arranged to provide, exteriorly of said storage and dispensing vessel, a pressure below said interior pressure, to effect desorption of boron trifluoride gas from the solid-phase physical sorbent medium, and gas flow of desorbed boron trifluoride gas through the gas dispensing manifold.
- 26. A gas supply system according to claim 7, further comprising a heater operatively arranged in relation to the storage and dispensing vessel for selective heating of the solid-phase physical sorbent medium, to effect thermally-enhanced desorption of the sorbate gas from the solid-phase physical sorbent medium.
- 27. A gas supply system according to claim 7, wherein the solid-phase physical sorbent medium comprises a material selected from the group consisting of silica, carbon, molecular sieves, alumina, macroreticulate polymers, kieselguhr, and aluminosilicates.
- 28. A gas supply system according to claim 7, wherein the solid-phase physical sorbent medium comprises a crystalline aluminosilicate composition.
- 29. A gas supply system according to claim 28, wherein the crystalline aluminosilicate composition has a pore size in the range of from about 4 to about 13 Angstroms.
- 30. A gas supply system according to claim 28, wherein the crystalline aluminosilicate composition comprises 5A molecular sieve.
- 31. A gas supply system according to claim 28, wherein the crystalline aluminosilicate composition comprises a binderless molecular sieve.
- 32. A gas supply system according to claim 7, wherein the solid-phase physical sorbent medium is present in said storage and dispensing vessel with a chemisorbent material having a sorptive affinity for contaminants of said sorbate gas therein.
- 33. A gas supply system according to claim 32, wherein the chemisorbent material has a sorptive affinity for non-inert atmospheric gases.
- 34. A gas supply system according to claim 32, wherein the chemisorbent material comprises a scavenger selected from the group consisting of:
(A) a scavenger including a support having associated therewith, but not covalently bonded thereto, a compound which in the presence of said contaminant provides an anion which is reactive to effect the removal of said contaminant, said compound being selected from one or more members of the group consisting of:
(i) carbanion source compounds whose corresponding protonated carbanion compounds have a pKa value of from about 22 to about 36; and (ii) anion source compounds formed by reaction of said carbanion source compounds with the sorbate gas; and (B) a scavenger comprising:
(i) an inert support having a surface area in the range of from about 50 to about 1000 square meters per gram, and thermally stable up to at least about 250° C.; and (ii) an active scavenging species, present on the support at a concentration of from about 0.01 to about 1.0 moles per liter of support, and formed by the deposition on the support of a Group IA metal selected from sodium, potassium, rubidium, and cesium and their mixtures and alloys and pyrolysis thereof on said support.
- 35. A gas supply system according to claim 32, wherein the chemisorbent material is selected from the group consisting of potassium arsenide and trityllithium.
- 36. An ion implantation system, comprising a reagent source for reagent source material and an ion implantation apparatus coupled in gas flow communication with said reagent source, and wherein the reagent source comprises:
a gas cabinet defining an enclosure including therein a gas dispensing manifold and one or more adsorbent-based gas storage and dispensing vessels mounted in the enclosure and joined in gas flow communication with the gas dispensing manifold, each said adsorbent-based storage and dispensing vessel comprising: a storage and dispensing vessel constructed and arranged for holding a solid-phase physical sorbent medium, and for selectively flowing gas into and out of said vessel; a solid-phase physical sorbent medium disposed in said storage and dispensing vessel at an interior gas pressure; a sorbate gas physically adsorbed on said solid-phase physical sorbent medium; and the gas dispensing manifold being at least a part of flow circuitry interconnecting the storage and dispensing vessel and said ion implantation apparatus in gas flow communication with one another, said flow circuitry being constructed and arranged to provide, exteriorly of said storage and dispensing vessel, a pressure below said interior pressure, to effect desorption of sorbate gas from the solid-phase physical sorbent medium, and gas flow of desorbed gas through the flow circuitry to the ion implantation apparatus; wherein the solid-phase physical sorbent medium is devoid of trace components selected from the group consisting of water, metals and oxidic transition metal species in a sufficient concentration to decompose the sorbate gas in said storage and dispensing vessel.
- 37. A process for supplying a gas reagent, comprising:
providing a storage and dispensing vessel containing a solid-phase physical sorbent medium having a physically sorptive affinity for said gas reagent; physically sorptively loading on said solid-phase physical sorbent medium a sorbate gas, to yield a sorbate gas-loaded physical sorbent medium; mounting the storage and dispensing vessel in a gas cabinet defining an enclosure including therein a gas dispensing manifold; coupling the gas storage and dispensing vessel in gas flow communication with the gas dispensing manifold; selectively desorbing sorbate gas from the sorbate gas-loaded physical sorbent medium, by reduced pressure desorption, for flow of desorbed sorbate gas into the gas dispensing manifold and dispensing thereof; wherein the solid-phase physical sorbent medium is devoid of trace components selected from the group consisting of water, metals and oxidic transition metal species in a sufficient concentration to decompose the sorbate gas in said storage and dispensing vessel.
- 38. A process according to claim 37, wherein the solid-phase physical sorbent medium contains less than 350 parts-per-million by weight of trace components selected from the group consisting of water and oxidic transition metal species, based on the weight of the physical sorbent medium.
- 39. A process according to claim 37, wherein the solid-phase physical sorbent medium contains less than 100 parts-per-million by weight of trace components selected from the group consisting of water and oxidic transition metal species, based on the weight of the physical sorbent medium.
- 40. A process according to claim 37, wherein the solid-phase physical sorbent medium contains no more than 1 part-per-million by weight of trace components selected from the group consisting of water and oxidic transition metal species, based on the weight of the physical sorbent medium.
- 41. A process according to claim 37, wherein the solid-phase physical sorbent medium concentration of trace components selected from the group consisting of water and oxidic transition metal species, based on the weight of the physical sorbent medium, is insufficient to decompose more than 5% by weight of the sorbate gas after 1 year at 25° C. and said interior pressure, in said.
- 42. A process according to claim 37, wherein the oxidic transition metal species are selected from the group consisting of oxides, sulfites and nitrates.
- 43. A process according to claim 37, wherein the sorbate gas is a hydride gas.
- 44. A process according to claim 37, wherein the sorbate gas is selected from the group consisting of silane, diborane, arsine, phosphine, chlorine, BCl3, BF3, B2D6, tungsten hexafluoride, (CH3)3Sb, hydrogen fluoride, hydrogen chloride, hydrogen iodide, hydrogen bromide, germane, ammonia, stibine, hydrogen sulfide, hydrogen selenide, hydrogen telluride, and NF3.
- 45. A process according to claim 37, wherein the sorbate gas is boron trifluoride.
- 46. A process for supplying a gas reagent, comprising:
providing a storage and dispensing vessel containing a solid-phase physical sorbent medium having a physically sorptive affinity for said gas reagent; physically sorptively loading on said solid-phase physical sorbent medium a sorbate gas, to yield a sorbate gas-loaded physical sorbent medium; mounting the storage and dispensing vessel in a gas cabinet defining an enclosure including therein a gas dispensing manifold; coupling the gas storage and dispensing vessel in gas flow communication with the gas dispensing manifold; and selectively desorbing sorbate gas from the sorbate gas-loaded physical sorbent medium, by reduced pressure desorption, for flow of desorbed sorbate gas into the gas dispensing manifold and dispensing thereof; wherein the solid-phase physical sorbent medium concentration of trace components selected from the group consisting of water, metals, and oxidic transition metal species, based on the weight of the physical sorbent medium, is insufficient to cause decomposition of the sorbate gas resulting in more than a 25% rise in interior pressure after 1 week at 25° C. in said storage and dispensing vessel.
- 47. A process according to claim 46, wherein the solid-phase physical sorbent medium contains less than 350 parts-per-million by weight of trace components selected from the group consisting of water and oxidic transition metal species, based on the weight of the physical sorbent medium.
- 48. A process according to claim 46, wherein the solid-phase physical sorbent medium contains less than 100 parts-per-million by weight of trace components selected from the group consisting of water and oxidic transition metal species, based on the weight of the physical sorbent medium.
- 49. A process according to claim 46, wherein the solid-phase physical sorbent medium contains no more than 1 part-per-million by weight of trace components selected from the group consisting of water and oxidic transition metal species, based on the weight of the physical sorbent medium.
- 50. A process according to claim 46, wherein the solid-phase physical sorbent medium concentration of trace components selected from the group consisting of water and oxidic transition metal species, based on the weight of the physical sorbent medium, is insufficient to decompose more than 5% by weight of the sorbate gas after 1 year at 25° C. and said interior pressure, in said storage and dispensing vessel.
- 51. A process according to claim 46, wherein the oxidic transition metal species are selected from the group consisting of oxides, sulfites and nitrates.
- 52. A process according to claim 46, wherein the sorbate gas is a hydride gas.
- 53. A process according to claim 46, wherein the sorbate gas is selected from the group consisting of silane, diborane, arsine, phosphine, chlorine, BCl3, BF3, B2D6, tungsten hexafluoride, (CH3)3Sb, hydrogen fluoride, hydrogen chloride, hydrogen iodide, hydrogen bromide, germane, ammonia, stibine, hydrogen sulfide, hydrogen selenide, hydrogen telluride, and NF3.
- 54. A process according to claim 46, wherein the sorbate gas is boron trifluoride.
- 55. An adsorption-desorption process for storage and dispensing of boron trifluoride, said process comprising:
providing a storage and dispensing vessel containing a solid-phase physical sorbent medium having a physically sorptive affinity for boron trifluoride; physically sorptively loading boron trifluoride on said solid-phase physical sorbent medium, to yield a boron trifluoride-loaded physical sorbent medium; mounting the storage and dispensing vessel in a gas cabinet defining an enclosure including therein a gas dispensing manifold; coupling the gas storage and dispensing vessel in gas flow communication with the gas dispensing manifold; and selectively desorbing boron trifluoride from the boron trifluoride-loaded physical sorbent medium, by reduced pressure desorption, for flow of desorbed boron trifluoride gas into the gas dispensing manifold and dispensing thereof.
- 56. A process according to claim 37, further comprising selectively heating the solid-phase physical sorbent medium, to effect thermally-enhanced desorption of the sorbate gas from the solid-phase physical sorbent medium.
- 57. A process according to claim 37, wherein the solid-phase physical sorbent medium comprises a material selected from the group consisting of silica, carbon molecular sieves, alumina, macroreticulate polymers, kieselguhr, carbon, and alumino silicates.
- 58. A process according to claim 37, wherein the solid-phase physical sorbent medium comprises a crystalline aluminosilicate composition.
- 59. A process according to claim 37, wherein the crystalline aluminosilicate composition has pore size in the range of from about 4 to about 13 Angstroms.
- 60. A process according to claim 37, wherein the crystalline aluminosilicate composition comprises 5A molecular sieve.
- 61. A process according to claim 57, wherein the crystalline aluminosilicate composition comprises a binderless molecular sieve.
- 62. A process according to claim 37, wherein the solid-phase physical sorbent medium is present in said storage and dispensing vessel with a chemisorbent material having a sorptive affinity for contaminants of said sorbate gas therein.
- 63. A process according to claim 37, wherein the sorbate gas comprises an impurity component, and the solid-phase physical sorbent medium is provided in the storage and dispensing vessel together with an impurity scavenger for removal of the impurity component from the sorbate gas.
- 64. A process according to claim 62, wherein the chemisorbent material has a sorptive affinity for non-inert atmospheric gases.
- 65. A process according to claim 62, wherein the chemisorbent material comprises a scavenger selected from the group consisting of:
(A) a scavenger including a support having associated therewith, but not covalently bonded thereto, a compound which in the presence of said contaminant provides an anion which is reactive to effect the removal of said contaminant, said compound being selected from one or more members of the group consisting of:
(i) carbanion source compounds whose corresponding protonated carbanion compounds have a pKa value of from about 22 to about 36; and (ii) anion source compounds formed by reaction of said carbanion source compounds with the sorbate gas; and (B) a scavenger comprising:
(i) an inert support having a surface area in the range of from about 50 to about 1000 square meters per gram, and thermally stable up to at least about 250° C.; and (ii) an active scavenging species, present on the support at a concentration of from about 0.01 to about 1.0 moles per liter of support, and formed by the deposition on the support of a Group IA metal selected from sodium, potassium, rubidium, and cesium and their mixtures and alloys and pyrolysis thereof on said support.
- 66. A process according to claim 62, wherein the chemisorbent material is selected from the group consisting of potassium arsenide and trityllithium.
- 67. A gas supply system comprising a gas cabinet defining an enclosure including therein a gas dispensing manifold and one or more adsorbent-based gas storage and dispensing vessels mounted in the enclosure and joined in gas flow communication with the gas dispensing manifold, with a cryopump coupled to said gas dispensing manifold for pressurizing desorbed gas withdrawn from the adsorbent-based gas storage and dispensing vessels and discharging the resultingly pressurized gas.
- 68. A process for supplying a gas reagent, comprising:
providing a storage and dispensing vessel containing a solid-phase physical sorbent medium having a physically sorptive affinity for said gas reagent; physically sorptively loading on said solid-phase physical sorbent medium a sorbate gas, to yield a sorbate gas-loaded physical sorbent medium; mounting the storage and dispensing vessel in a gas cabinet defining an enclosure including therein a gas dispensing manifold; coupling the gas storage and dispensing vessel in gas flow communication with a cryopump; coupling the cryopump in gas flow communication with the gas dispensing manifold; selectively desorbing sorbate gas from the sorbate gas-loaded physical sorbent medium, by pressure-differential mediated desorption, for flow of desorbed sorbate gas to the cryopump; and cryopumping the desorbed gas from the storage and dispensing vessel to a predetermined pressure, wherein said predetermined pressure is higher than pressure of the desorbed gas flowed out of the storage and dispensing vessel.
- 69. A gas supply system comprising a gas cabinet defining an enclosure including therein a gas dispensing manifold and one or more adsorbent-based gas storage and dispensing vessels mounted in the enclosure and joined in gas flow communication with the gas dispensing manifold, comprising a thermal monitoring and control assembly for maintaining predetermined temperature characteristics of the gas supply system.
- 70. A gas supply system according to claim 69, further comprising: a heater element for selective augmentive heating of the vessels and sorbent therein; a sprinkler system arranged for operation for fire control in the cabinet; an exhaust heat sensor for monitoring temperature of gas exhausted from the cabinet; a toxic gas monitor for shut-down of the system when toxic gas is sensed; a scrubber for bulk sorption of gas leakage in the cabinet; and redundant pressure and temperature control means.
- 71. A semiconductor manufacturing facility, comprising:
a gas supply system comprising a gas cabinet defining an enclosure including therein a gas dispensing manifold and one or more adsorbent-based gas storage and dispensing vessels mounted in the enclosure and joined in gas flow communication with the gas dispensing manifold; and a semiconductor manufacturing process unit arranged for use of gas from said gas supply system, and interconnected with the gas supply system by flow circuitry including said gas dispensing manifold for flow of gas from the gas supply system to the semiconductor manufacturing process unit.
- 72. A semiconductor manufacturing facility according to claim 71, wherein the semiconductor manufacturing process unit comprises a process unit selected from the group consisting of: chemical vapor deposition reactors; ion implanters; photolithography tracks; etch chambers; diffusion chambers; and plasma generators.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This is a continuation-in-part of U.S. patent application Ser. No. 09/082,596, filed on May 21, 1998, which is a continuation-in-part of 08/809,019 filed Apr. 11, 1997 in the United States Patent and Trademark Office as a Designated/Elected Office (DO/EO/US) under the provisions of 35 USC 371, based on PCT international application no. PCT/US95/13040 filed on Oct. 13, 1995 designating the United States as a Designated State, and claiming the priority of U.S. patent application Ser. No. 08/322,224 filed Oct. 13, 1994 and issued May 21, 1996 as U.S. Pat. No. 5,518,528.
Continuations (1)
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Number |
Date |
Country |
Parent |
09564323 |
May 2000 |
US |
Child |
10008132 |
Dec 2001 |
US |
Continuation in Parts (2)
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Number |
Date |
Country |
Parent |
09082596 |
May 1998 |
US |
Child |
09564323 |
May 2000 |
US |
Parent |
08809019 |
Mar 1998 |
US |
Child |
09082596 |
May 1998 |
US |