Claims
- 1. A method of producing a halftone phase shift photomask blank having on a transparent substrate a halftone phase shift layer which includes at least one layer composed mainly of a chromium compound,
- wherein chromium is evaporated or sputtered from metal chromium or a chromium compound in a plasma generated from a gas containing fluorine atoms, thereby forming on said transparent substrate a layer composed mainly of a chromium fluoride compound.
- 2. A halftone phase shift photomask blank producing method according to claim 1, wherein the evaporation of chromium is effected by bombardment with electrons accelerated by an electron gun, or bombardment with an ionized gas.
- 3. A halftone phase shift photomask blank producing method according to claim 1 or 2, wherein the plasma that is produced from a gas containing fluorine atoms is generated by ionizing a fluorine atom-containing gas while introducing it into a space between the chromium source and the transparent substrate.
- 4. A halftone phase shift photomask blank producing method according to claim 1 or 2, wherein the plasma that is produced from a gas containing fluorine atoms is generated by introducing a previously ionized, fluorine atom-containing gas into a space between the chromium source and the transparent substrate.
- 5. A halftone phase shift photomask blank producing method according to claim 1 or 2, wherein the plasma that is produced from a gas containing fluorine atoms is generated by introducing a previously ionized gas into a space between the chromium source and the transparent substrate while introducing a fluorine atom-containing gas into the same space.
- 6. A halftone phase shift photomask blank producing method according to claim 1, wherein a previously ionized, fluorine atom-containing gas is directed at the chromium source through a space between the chromium source and the transparent substrate, thereby evaporating chromium and also generating a plasma containing fluorine atoms, and thus forming on said transparent substrate a layer composed mainly of a chromium fluoride compound.
Priority Claims (3)
Number |
Date |
Country |
Kind |
5-203234 |
Aug 1993 |
JPX |
|
6-089488 |
Apr 1994 |
JPX |
|
6-105209 |
May 1994 |
JPX |
|
Parent Case Info
This is a divisional of application Ser. No. 08/722,439 filed Oct. 17, 1996 now U.S. Pat. No. 5,738,959, which is a continuation of application Ser. No. 08/292,263 filed Aug. 17, 1994, now abandoned.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
5419988 |
Mohri et al. |
May 1995 |
|
Foreign Referenced Citations (1)
Number |
Date |
Country |
A63-081426 |
Apr 1988 |
JPX |
Non-Patent Literature Citations (2)
Entry |
Patent Abstracts of Japan, vol. 014, No. 565 (P-1143), Dec. 1990 for JP-A-02 242252 (Toppan Printing Co., Ltd.), Sep. 26, 1990. |
Patent Abstracts of Japan, vol. 016, No. 407 (P-1411), Aug. 1992 for JP-A-04 136854 (Hitachi Ltd.), May 11, 1992. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
722439 |
Oct 1996 |
|
Continuations (1)
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Number |
Date |
Country |
Parent |
292263 |
Aug 1994 |
|