Claims
- 1. A semiconductor device comprising:
- a first single crystalline semiconductor layer;
- a second single crystalline semiconductor layer doped with N-type impurities, having an electron affinity less than that of said first single crystalline semiconductor layer, a heterojunction being formed between said first and second single crystalline semiconductor layers;
- a gate electrode formed on said second single crystalline semiconductor layer;
- an electron-storing layer for storing electrons and acting as a conduction channel, formed adjacent to said heterojunction and within said first single crystalline semiconductor layer, due to the difference in electron affinity between said first and second single crystalline semiconductor layers;
- a pair of conduction layers comprising substantially the same semiconductor material as said first single crystalline semiconductor layer, being highly doped with N-type impurities, and extending through said second single crystalline semiconductor layer into said first single crystalline semiconductor layer to a depth level with the depth of said heterojunction and forming an epitaxial connection with said first single crystalline semiconductor layer;
- an insulating layer, interposed between said conduction layers and said second single crystalline semiconductor layer, composed of oxide or nitride of said second single crystalline semiconductor layer; and
- a pair of electrodes, respectively, formed on said pair of conduction layers and electrically connected to said conduction channel via said conduction layer, said pair of electrodes electrically connected to each other through said conduction channel.
- 2. A semiconductor device according to claim 1, wherein said first single crystalline semiconductor layer comprises GaAs and said second single crystalline semiconductor layer comprises AlGaAs.
- 3. A semiconductor device according to claim 1, wherein said conduction layers comprise one member selected from the group consisting of GaAs and Ge.
- 4. A semiconductor device according to claim 1, wherein said insulating layer comprises aluminum oxide or aluminum nitride.
Priority Claims (1)
Number |
Date |
Country |
Kind |
56-61702 |
Apr 1981 |
JPX |
|
Parent Case Info
This is a continuation of co-pending application Ser. No. 371,505, filed on Apr. 23, 1982, now abandoned.
US Referenced Citations (5)
Non-Patent Literature Citations (1)
Entry |
Mimura et al., "A New Field-Effect Transistor with Selectively Doped GaAs/n-AlGaAs Heterojunctions", Japanese Journal of Applied Physics, vol. 19, No. 5, May 1980, pp. L225-L227. |
Continuations (1)
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Number |
Date |
Country |
Parent |
371505 |
Apr 1982 |
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