with field effect produced by a PN or other rectifying junction gate

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H01L29/80

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/80with field effect produced by a PN or other rectifying junction gate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Three dimensional vertically structured electronic devices
- Patent number 12,170,330
- Issue date Dec 17, 2024
- Lawrence Livermore National Security, LLC
- Adam Conway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN vertical-channel junction field-effect transistors with regrown...
- Patent number 12,159,943
- Issue date Dec 3, 2024
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-based sensor with junction-gate field effect transistor a...
- Patent number 12,148,853
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Coupled polysilicon guard rings for enhancing breakdown voltage in...
- Patent number 12,136,646
- Issue date Nov 5, 2024
- Power Integrations, Inc.
- Kuo-Chang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having PMOS transistor with a channel layer...
- Patent number 12,131,953
- Issue date Oct 29, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Juanjuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC devices with shielding structure
- Patent number 12,119,377
- Issue date Oct 15, 2024
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device with field effect gate
- Patent number 12,113,110
- Issue date Oct 8, 2024
- Samsung Electronics Co., Ltd.
- Woochul Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide semiconductor film and semiconductor device
- Patent number 12,107,125
- Issue date Oct 1, 2024
- FLOSFIA INC.
- Ryohei Kanno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Power devices having tunable saturation current clamps therein that...
- Patent number 12,094,932
- Issue date Sep 17, 2024
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 12,087,856
- Issue date Sep 10, 2024
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 12,080,757
- Issue date Sep 3, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 12,080,630
- Issue date Sep 3, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,068,384
- Issue date Aug 20, 2024
- Mitsubishi Electric Corporation
- Yutaro Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,068,375
- Issue date Aug 20, 2024
- Panasonic Holdings Corporation
- Daisuke Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including poly-silicon junction field-effect t...
- Patent number 12,034,084
- Issue date Jul 9, 2024
- SK keyfoundry Inc.
- Young Bae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor devices and structures with metal layers
- Patent number 12,027,518
- Issue date Jul 2, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with controllable resistance
- Patent number 12,015,056
- Issue date Jun 18, 2024
- International Business Machines Corporation
- Yulong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered substrate structures for power and RF applications
- Patent number 12,009,205
- Issue date Jun 11, 2024
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High-density neuromorphic computing element
- Patent number 11,983,622
- Issue date May 14, 2024
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
3D semiconductor devices and structures with metal layers
- Patent number 11,984,445
- Issue date May 14, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Complementary switch element
- Patent number 11,972,985
- Issue date Apr 30, 2024
- National University Corporation Hokkaido University
- Katsuhiro Tomioka
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Crystalline oxide semiconductor film and semiconductor device
- Patent number 11,967,618
- Issue date Apr 23, 2024
- FLOSFIA INC.
- Isao Takahashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,967,634
- Issue date Apr 23, 2024
- Denso Corporation
- Kensuke Nagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,955,513
- Issue date Apr 9, 2024
- NISSHINBO MICRO DEVICES INC.
- Makoto Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having asymmetric threshold voltage and buck converter
- Patent number 11,936,299
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chu Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing semiconductor device with contact structure
- Patent number 11,935,834
- Issue date Mar 19, 2024
- NANYA TECHNOLOGY CORPORATION
- Tse-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for JFET with implant isolation
- Patent number 11,929,440
- Issue date Mar 12, 2024
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,923,461
- Issue date Mar 5, 2024
- Denso Corporation
- Kenji Kono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type oxide semiconductor and method for manufacturing same
- Patent number 11,916,103
- Issue date Feb 27, 2024
- FLOSFIA INC.
- Shizuo Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Regrowth uniformity in GaN vertical devices
- Patent number 11,916,134
- Issue date Feb 27, 2024
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICES WITH SUPERJUNCTIONS
- Publication number 20240429272
- Publication date Dec 26, 2024
- Wolfspeed, Inc.
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL JUNCTION FIELD-EFFECT TRANSISTORS WITH SOURCE-DRAIN DIODE...
- Publication number 20240421151
- Publication date Dec 19, 2024
- Qorvo US, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED BODY TRANSISTORS
- Publication number 20240421233
- Publication date Dec 19, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ming Tsang TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240405074
- Publication date Dec 5, 2024
- Rohm Co., Ltd.
- Yuji KOGA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240395945
- Publication date Nov 28, 2024
- Rohm Co., Ltd.
- Chikara TERADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...
- Publication number 20240387766
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH THREE LEVELS AND ISOLATI...
- Publication number 20240379502
- Publication date Nov 14, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240371929
- Publication date Nov 7, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure and Manufacturing Method Thereof
- Publication number 20240355812
- Publication date Oct 24, 2024
- DIODES INCORPORATED
- Chiao-Shun Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AUTO-DOPING REDUCTION IN SEMICONDUCTOR STRUCTURE
- Publication number 20240347605
- Publication date Oct 17, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Takashi Shiga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240332430
- Publication date Oct 3, 2024
- Rohm Co., Ltd.
- Yuji KOGA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS
- Publication number 20240304617
- Publication date Sep 12, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD FOR JFET WITH IMPLANT ISOLATION
- Publication number 20240274725
- Publication date Aug 15, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REGROWTH UNIFORMITY IN GAN VERTICAL DEVICES
- Publication number 20240258408
- Publication date Aug 1, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT
- Publication number 20240256848
- Publication date Aug 1, 2024
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240234585
- Publication date Jul 11, 2024
- DB HITEK CO., LTD.
- Hong Sik SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diamond-Capped Gallium Oxide Transistor
- Publication number 20240234139
- Publication date Jul 11, 2024
- The Government of the United States of America, as represented by the Secreta...
- Marko J. Tadjer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED SHIELD STRUCTURES FOR POWER SEMICONDUCTOR DEVICES AND RELATE...
- Publication number 20240234507
- Publication date Jul 11, 2024
- Wolfspeed, Inc.
- Madankumar Sampath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A FIELD PLATE HAVING A RECESSED REGION AN...
- Publication number 20240222443
- Publication date Jul 4, 2024
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A TRANSISTOR HAVING ASYMMETRIC THRESHOLD VOLTAGE A...
- Publication number 20240223087
- Publication date Jul 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chu Fu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS
- Publication number 20240222368
- Publication date Jul 4, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED JFET DEVICE
- Publication number 20240204111
- Publication date Jun 20, 2024
- Semiconductor Components Industries, LLC
- Alexander Viktorovich BOLOTNIKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS SUPERJUNCTION DEVICES
- Publication number 20240186370
- Publication date Jun 6, 2024
- Virginia Tech Intellectual Properties, Inc.
- Yuhao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER DEVICES FABRICATED USING IMPLANTED METHODS
- Publication number 20240178314
- Publication date May 30, 2024
- Wolfspeed, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH P-FET TYPE BEHAVIOUR
- Publication number 20240162299
- Publication date May 16, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Julien BUCKLEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240162297
- Publication date May 16, 2024
- Hitachi, Ltd
- Takeru SUTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diamond-Capped Gallium Oxide Transistor
- Publication number 20240136180
- Publication date Apr 25, 2024
- The Government of the United States of America, as represented by the Secreta...
- Marko J. Tadjer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
- Publication number 20240128165
- Publication date Apr 18, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF
- Publication number 20240120410
- Publication date Apr 11, 2024
- Hon Young Semiconductor Corporation
- Yu-Tsu LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES OF SEMICONDUCTOR DEVICES
- Publication number 20240120373
- Publication date Apr 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- HONG YU
- H01 - BASIC ELECTRIC ELEMENTS

with field effect produced by a PN or other rectifying junction gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Three dimensional vertically structured electronic devices

GaN vertical-channel junction field-effect transistors with regrown...

Germanium-based sensor with junction-gate field effect transistor a...

Coupled polysilicon guard rings for enhancing breakdown voltage in...

Semiconductor structure having PMOS transistor with a channel layer...

SiC devices with shielding structure

Nitride semiconductor device with field effect gate

Oxide semiconductor film and semiconductor device

Power devices having tunable saturation current clamps therein that...

Field effect transistor

Method of fabricating super-junction based vertical gallium nitride...

3D semiconductor device and structure with metal layers and a conne...

Semiconductor device

Nitride semiconductor device

Semiconductor device including poly-silicon junction field-effect t...

3D semiconductor devices and structures with metal layers

Field effect transistor with controllable resistance

Engineered substrate structures for power and RF applications

High-density neuromorphic computing element

3D semiconductor devices and structures with metal layers

Complementary switch element

Crystalline oxide semiconductor film and semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device

Transistor having asymmetric threshold voltage and buck converter

Method for preparing semiconductor device with contact structure

Fabrication method for JFET with implant isolation

Semiconductor device

P-type oxide semiconductor and method for manufacturing same

Regrowth uniformity in GaN vertical devices

Patents Applicationslast 30 patents

SILICON CARBIDE SEMICONDUCTOR DEVICES WITH SUPERJUNCTIONS

VERTICAL JUNCTION FIELD-EFFECT TRANSISTORS WITH SOURCE-DRAIN DIODE...

GATED BODY TRANSISTORS

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH THREE LEVELS AND ISOLATI...

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

Semiconductor Structure and Manufacturing Method Thereof

AUTO-DOPING REDUCTION IN SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICE

3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS

FABRICATION METHOD FOR JFET WITH IMPLANT ISOLATION

REGROWTH UNIFORMITY IN GAN VERTICAL DEVICES

HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT

SEMICONDUCTOR DEVICE

Diamond-Capped Gallium Oxide Transistor

BURIED SHIELD STRUCTURES FOR POWER SEMICONDUCTOR DEVICES AND RELATE...

SEMICONDUCTOR DEVICE WITH A FIELD PLATE HAVING A RECESSED REGION AN...

METHOD OF MAKING A TRANSISTOR HAVING ASYMMETRIC THRESHOLD VOLTAGE A...

3D SEMICONDUCTOR DEVICES AND STRUCTURES WITH METAL LAYERS

SELF-ALIGNED JFET DEVICE

HETEROGENEOUS SUPERJUNCTION DEVICES

VERTICAL POWER DEVICES FABRICATED USING IMPLANTED METHODS

FIELD EFFECT TRANSISTOR WITH P-FET TYPE BEHAVIOUR

SILICON CARBIDE SEMICONDUCTOR DEVICE

Diamond-Capped Gallium Oxide Transistor

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF

ISOLATION STRUCTURES OF SEMICONDUCTOR DEVICES