Claims
- 1. A method for depositing diamond by chemical vapor deposition on a substrate which comprises:
- positioning said substrate with an edge facing at least one filament at a distance therefrom up to about 1 mm.,
- heating said filament to a temperature in the range of about 1800.degree.-2500.degree. C.,
- maintaining said substrate at a pressure lower than atmospheric and passing a mixture of hydrogen and a hydrocarbon gas into contact with said filament and substrate, whereby diamond forms on the edge of said substrate, and
- translationally moving said substrate relative to said filament to maintain a space of up to about 1 mm. between said filament and the edge of the diamond formed on said edge of said substrate.
- 2. A method according to claim 1 wherein the distance between said substrate and filament is in the range of about 0.25-1 mm.
- 3. A method according to claim 2 wherein the gas mixture comprises about 1-5 volume percent hydrocarbon based on total gases.
- 4. A method according to claim 3 wherein the hydrocarbon is methane.
- 5. A method according to claim 2 wherein the movement of said substrate relative to said filament is programmed by computer means.
- 6. A method according to claim 2 wherein the distance between said substrate and filament is in the range of about 0.3-0.7 mm.
- 7. A method according to claim 2 wherein at least two filaments are present in a plane perpendicular to that of said substrate, and said gas mixture is supplied from the opposite side of said filaments from said substrate.
- 8. A method according to claim 2 wherein a single filament and a plurality of substrates are present.
- 9. A method according to claim 2 wherein said edge of said substrate has a length approximately equal to the thickness of said substrate.
- 10. A method according to claim 2 wherein said edge of said substrate is parallel to said filament.
- 11. A method according to claim 2 wherein diamond growth is initiated with said substrate perpendicular to said filament and said substrate is rotated to a position parallel to said filament upon commencement of single crystal diamond growth.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation-in-part of application Ser. No. 08/194,958, filed Feb. 14, 1994, now abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4816286 |
Hirose |
Mar 1989 |
|
4953499 |
Anthony et al. |
Sep 1990 |
|
Non-Patent Literature Citations (1)
Entry |
Aikyo et al, "Diamond Synthesis Suppressing the Thermal Decomposition of Methane in a Hot-Filament CVD", Jpn. J. Appl. Phys. 28(9) Sep. 1989, pp. L1631-L1633. |
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
194958 |
Feb 1994 |
|