The present disclosure relates generally to a high-frequency module and a communication device, and more specifically, to a high-frequency module including an electronic component disposed on a mounting board, and a communication device including the high-frequency module.
A module (high-frequency module) described in Patent Document 1 includes a module board (mounting board), a filter (first electronic component), a resin layer (first resin layer), and a metal film. The filter is disposed on the module board. The resin layer is provided so as to cover the lateral surfaces of the filter. The metal film is provided on the upper surfaces of the filter and the resin layer. The heat generated by the filter is dissipated via the metal layer.
In the module described in Patent Document 1, the heat dissipation performance for the filter (first electronic component) is insufficient.
The present disclosure has been made in view of the above problem, and has a possible benefit to provide a high-frequency module and a communication device in which the heat dissipation performance for a first electronic component can be improved.
A high-frequency module according to one aspect of the present disclosure includes a mounting board, a first electronic component, a first resin layer, and a first ground electrode. The mounting board has a first principal surface and a second principal surface facing each other. The first electronic component is disposed on the first principal surface of the mounting board. The first resin layer is disposed on the first principal surface of the mounting board, and covers at least a part of an outer peripheral surface of the first electronic component. The first ground electrode covers at least a part of the first resin layer. A principal surface of the first electronic component opposite to the mounting board is connected to the first ground electrode. The mounting board includes a second ground electrode inside the mounting board. The first ground electrode is connected to the second ground electrode.
A communication device according to one aspect of the present disclosure includes the high-frequency module and a signal processing circuit. The signal processing circuit processes a high-frequency signal that passes through the high-frequency module.
The present disclosure attains an advantage in that the heat dissipation performance for the first electronic component can be improved.
As illustrated in
In this structure, the principal surfaces 121A and 171 of the first electronic components 12A and 17 opposite to the mounting board 3 are connected to the first ground electrode 6, and the first ground electrode 6 is connected to the second ground electrode 34. Thus, the heat generated by the first electronic components 12A and 17 can be dissipated to the second ground electrode 34 through the first ground electrode 6. As a result, the heat dissipation performance for the first electronic components 12A and 17 can be improved.
The high-frequency module 1 and a communication device 300 according to this embodiment are described below in detail with reference to
As illustrated in
The communication device 300 includes a signal processing circuit 301 and at least one (one in the example illustrated in
The high-frequency module 1 amplifies a reception signal (high-frequency signal) received by the antenna 310, and outputs the reception signal to the signal processing circuit 301. The high-frequency module 1 amplifies a transmission signal from the signal processing circuit 301, and outputs the transmission signal to the antenna 310. For example, the high-frequency module 1 is controlled by the signal processing circuit 301.
The signal processing circuit 301 processes high-frequency signals (transmission signal and reception signal) that pass through the high-frequency module 1. More specifically, the signal processing circuit 301 performs signal processing on a reception signal received from the high-frequency module 1. The signal processing circuit 301 performs signal processing on a transmission signal to be outputted to the high-frequency module 1. The signal processing circuit 301 includes an RF signal processing circuit 302 and a baseband signal processing circuit 303.
For example, the RF signal processing circuit 302 is an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on a high-frequency signal (reception signal). For example, the RF signal processing circuit 302 performs signal processing such as down-conversion on a reception signal received from the high-frequency module 1, and outputs the reception signal to the baseband signal processing circuit 303. The RF signal processing circuit 302 performs signal processing such as up-conversion on a transmission signal outputted from the baseband signal processing circuit 303, and outputs the transmission signal to the high-frequency module 1.
For example, the baseband signal processing circuit 303 is a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 303 outputs a reception signal received from the RF signal processing circuit 302 to the outside. For example, the output signal (reception signal) is used as an image signal to display an image, or as an audio signal to make a telephone conversation. The baseband signal processing circuit 303 generates a transmission signal from a baseband signal (for example, an audio signal or an image signal) inputted from the outside, and outputs the generated transmission signal to the RF signal processing circuit 302.
As illustrated in
The high-frequency module 1 further includes two power amplifiers 11A and 11B and two low-noise amplifiers 14A and 14B. The high-frequency module 1 further includes two transmission filters 12A and 12B, two reception filters 15A and 15B, and one transmission/reception filter 17. The high-frequency module 1 further includes a first switch 21, a second switch 22, a third switch 23, and a fourth switch 24. The high-frequency module 1 further includes two output matching circuits 13A and 13B, three matching circuits 18A, 18B, and 18C, two input matching circuits 16A and 16B, and one matching circuit 19. The high-frequency module 1 further includes a controller 20.
The high-frequency module 1 includes a plurality of external connection electrodes 8. The plurality of external connection electrodes 8 includes an antenna terminal 81, two signal input terminals 82A and 82B, two signal output terminals 83A and 83B, and a control terminal 84. The antenna 310 is connected to the antenna terminal 81. The two signal input terminals 82A and 82B each input a high-frequency signal (transmission signal) from the signal processing circuit 301 to the high-frequency module 1. The two signal output terminals 83A and 83B each output a high-frequency signal (reception signal) from the high-frequency module 1 to the signal processing circuit 301. The control terminal 84 inputs a control signal from the signal processing circuit 301 to the controller 20.
The power amplifier 11A is provided on a transmission path T1 connected to the signal input terminal 82A. The power amplifier 11A amplifies and outputs a transmission signal from the signal processing circuit 301. More specifically, the power amplifier 11A amplifies and outputs a transmission signal in a first predetermined frequency band that is inputted from the signal processing circuit 301 via the signal input terminal 82A. For example, the first predetermined frequency band includes a first communication band and a second communication band. The first communication band is associated with a transmission signal that passes through the transmission filter 12A. The second communication band is associated with a transmission signal that passes through the transmission filter 12B.
The power amplifier 11A includes an input terminal and an output terminal. The input terminal of the power amplifier 11A is connected to the signal input terminal 82A. Thus, the input terminal of the power amplifier 11A is connected to the signal processing circuit 301 via the signal input terminal 82A. The output terminal of the power amplifier 11A is connected to a common terminal 220 of the second switch 22 via the output matching circuit 13A.
The power amplifier 11B is provided on a transmission path T2 connected to the signal input terminal 82B. The power amplifier 11B amplifies and outputs a transmission signal from the signal processing circuit 301. More specifically, the power amplifier 11B amplifies and outputs a transmission signal in a second predetermined frequency band that is inputted from the signal processing circuit 301 via the signal input terminal 82B. For example, the second predetermined frequency band includes a third communication band. The third communication band is associated with a transmission signal that passes through the transmission/reception filter 17.
The power amplifier 11B includes an input terminal and an output terminal. The input terminal of the power amplifier 11B is connected to the signal input terminal 82B. Thus, the input terminal of the power amplifier 11B is connected to the signal processing circuit 301 via the signal input terminal 82B. The output terminal of the power amplifier 11B is connected to a selective terminal 241 of the fourth switch 24 via the output matching circuit 13B.
The output matching circuit 13A is provided between the output terminal of the power amplifier 11A and the common terminal 220 of the second switch 22. The output matching circuit 13A performs the impedance matching between the power amplifier 11A and the transmission filters 12A and 12B. The output matching circuit 13B is provided between the output terminal of the power amplifier 11B and the selective terminal 241 of the fourth switch 24. The output matching circuit 13B performs the impedance matching between the power amplifier 11B and the transmission/reception filter 17.
The low-noise amplifier 14A includes an input terminal and an output terminal. The low-noise amplifier 14A is provided on a reception path R1 connected to the signal output terminal 83A. The low-noise amplifier 14A amplifies a reception signal in the first predetermined frequency band that is inputted to the input terminal of the low-noise amplifier 14A, and outputs the reception signal from the output terminal of the low-noise amplifier 14A. The input terminal of the low-noise amplifier 14A is connected to a common terminal 230 of the third switch 23 via the input matching circuit 16A. The output terminal of the low-noise amplifier 14A is connected to the signal output terminal 83A. Thus, the output terminal of the low-noise amplifier 14A is connected to the signal processing circuit 301 via the signal output terminal 83A.
The low-noise amplifier 14B includes an input terminal and an output terminal. The low-noise amplifier 14B is provided on a reception path R2 connected to the signal output terminal 83B. The low-noise amplifier 14B amplifies a reception signal in the second predetermined frequency band that is inputted to the input terminal of the low-noise amplifier 14B, and outputs the reception signal from the output terminal of the low-noise amplifier 14B. The input terminal of the low-noise amplifier 14B is connected to a selective terminal 242 of the fourth switch 24 via the input matching circuit 16B. The output terminal of the low-noise amplifier 14B is connected to the signal output terminal 83B. Thus, the output terminal of the low-noise amplifier 14B is connected to the signal processing circuit 301 via the signal output terminal 83B.
The input matching circuit 16A is provided between the input terminal of the low-noise amplifier 14A and the common terminal 230 of the third switch 23. The input matching circuit 16A performs the impedance matching between the low-noise amplifier 14A and the reception filters 15A and 15B. The input matching circuit 16B is provided between the input terminal of the low-noise amplifier 14B and the selective terminal 242 of the fourth switch 24. The input matching circuit 16B performs the impedance matching between the low-noise amplifier 14B and the transmission/reception filter 17.
The transmission filter 12A is connected between a selective terminal 221 of the second switch 22 and the matching circuit 18A. The pass band of the transmission filter 12A is a transmission band of the first communication band. The transmission filter 12B is connected between a selective terminal 222 of the second switch 22 and the matching circuit 18B. The pass band of the transmission filter 12B is a transmission band of the second communication band. The reception filter 15A is connected between a selective terminal 231 of the third switch 23 and the matching circuit 18A. The pass band of the reception filter 15A is a reception band of the first communication band. The reception filter 15B is connected between a selective terminal 232 of the third switch 23 and the matching circuit 18B. The pass band of the reception filter 15B is a reception band of the second communication band. The transmission/reception filter 17 is connected between a common terminal 240 of the fourth switch 24 and the matching circuit 18C. The pass band of the transmission/reception filter 17 is a transmission band and a reception band of the third communication band.
For example, the transmission filters 12A and 12B, the reception filters 15A and 15B, and the transmission/reception filter 17 are acoustic wave filters. The acoustic wave filter is a surface acoustic wave (SAW) filter that uses a surface acoustic wave. The transmission filters 12A and 12B, the reception filters 15A and 15B, and the transmission/reception filter 17 are not limited to the SAW filters, and may be, for example, BAW (Bulk Acoustic Wave) filters instead of the SAW filters.
The first switch 21 is an antenna switch connected to the antenna terminal 81. The first switch 21 includes a common terminal 210 and a plurality of (three in this case) selective terminals 211 to 213. The common terminal 210 is connected to the antenna terminal 81. The antenna 310 is connected to the antenna terminal 81. The selective terminal 211 is connected to a connection point between an output terminal of the transmission filter 12A and an input terminal of the reception filter 15A via the matching circuit 18A. The selective terminal 212 is connected to a connection point between an output terminal of the transmission filter 12B and an input terminal of the reception filter 15B via the matching circuit 18B. The selective terminal 213 is connected to the transmission/reception filter 17 via the matching circuit 18C. In the first switch 21, at least one of the plurality of (three in this case) selective terminals 211 to 213 is connectable to the common terminal 210. For example, the first switch 21 is a switch capable of one-to-one and one-to-many connection.
The first switch 21 is controlled by the controller 20. The first switch 21 switches the connection state between the common terminal 210 and the plurality of selective terminals 211 to 213 based on a control signal from the controller 20. For example, the first switch 21 is a switch IC (Integrated Circuit).
The second switch 22 is a band selection switch for switching signal paths for a plurality of transmission signals in different communication bands. The second switch 22 includes the common terminal 220 and the plurality of (two in this case) selective terminals 221 and 222. The common terminal 220 is connected to the output terminal of the power amplifier 11A via the output matching circuit 13A. The selective terminal 221 is connected to an input terminal of the transmission filter 12A. The selective terminal 222 is connected to an input terminal of the transmission filter 12B. In the second switch 22, at least one of the plurality of selective terminals 221 and 222 is connectable to the common terminal 220. For example, the second switch 22 is a switch capable of one-to-one and one-to-many connection.
The second switch 22 is controlled by the controller 20. The second switch 22 switches the connection state between the common terminal 220 and the plurality of selective terminals 221 and 222 based on a control signal from the controller 20. For example, the second switch 22 is a switch IC.
The third switch 23 includes the common terminal 230 and the plurality of selective terminals 231 and 232. The common terminal 230 is connected to the input terminal of the low-noise amplifier 14A via the input matching circuit 16A. The selective terminal 231 is connected to an output terminal of the reception filter 15A. The selective terminal 232 is connected to an output terminal of the reception filter 15B. In the third switch 23, at least one of the plurality of selective terminals 231 and 232 is connectable to the common terminal 230. For example, the third switch 23 is a switch capable of one-to-one and one-to-many connection.
The third switch 23 is controlled by the controller 20. The third switch 23 switches the connection state between the common terminal 230 and the plurality of selective terminals 231 and 232 based on a control signal from the controller 20. For example, the third switch 23 is a switch IC.
The matching circuit 18A is provided between each of the transmission filter 12A and the reception filter 15A and the selective terminal 211 of the first switch 21. The matching circuit 18A performs the impedance matching between the first switch 21 and each of the transmission filter 12A and the reception filter 15A. The matching circuit 18B is provided between each of the transmission filter 12B and the reception filter 15B and the selective terminal 212 of the first switch 21. The matching circuit 18B performs the impedance matching between the first switch 21 and each of the transmission filter 12B and the reception filter 15B. The matching circuit 18C is provided between the transmission/reception filter 17 and the selective terminal 213 of the first switch 21. The matching circuit 18C performs the impedance matching between the first switch 21 and the transmission/reception filter 17.
The controller 20 is a control device that controls electronic components such as the power amplifiers 11A and 11B, the low-noise amplifiers 14A and 14B, and the first to fourth switches 21 to 24 based on control signals from the signal processing circuit 301. The controller 20 is electrically connected to the electronic components described above. The controller 20 is connected to an output portion of the signal processing circuit 301 via the control terminal 84. The controller 20 controls the electronic components described above based on control signals inputted from the signal processing circuit 301 to the control terminal 84.
The high-frequency module 1 has first to third transmission paths T11, T12, and T2 and first to third reception paths R11, R12, and R2. The first transmission path T11 is a signal path that reaches the antenna terminal 81 via the power amplifier 11A, the output matching circuit 13A, the second switch 22, the transmission filter 12A, the matching circuit 18A, the first switch 21, and the matching circuit 19 in this order from the signal input terminal 82A. The second transmission path T12 is a signal path that reaches the antenna terminal 81 via the power amplifier 11A, the output matching circuit 13A, the second switch 22, the transmission filter 12B, the matching circuit 18B, the first switch 21, and the matching circuit 19 in this order from the signal input terminal 82A. The third transmission path T2 is a signal path that reaches the antenna terminal 81 via the power amplifier 11B, the output matching circuit 13B, the fourth switch 24, the transmission/reception filter 17, the matching circuit 18C, the first switch 21, and the matching circuit 19 in this order from the signal input terminal 82B. The first reception path R11 is a signal path that reaches the signal output terminal 83A via the matching circuit 19, the first switch 21, the matching circuit 18A, the reception filter 15A, the third switch 23, the input matching circuit 16A, and the low-noise amplifier 14A in this order from the antenna terminal 81. The second reception path R12 is a signal path that reaches the signal output terminal 83A via the matching circuit 19, the first switch 21, the matching circuit 18B, the reception filter 15B, the third switch 23, the input matching circuit 16A, and the low-noise amplifier 14A in this order from the antenna terminal 81. The third reception path R2 is a signal path that reaches the signal output terminal 83B via the matching circuit 19, the first switch 21, the matching circuit 18C, the transmission/reception filter 17, the fourth switch 24, the input matching circuit 16B, and the low-noise amplifier 14B in this order from the antenna terminal 81.
In the communication device 300, any one set out of a set of the transmission path T11 and the reception path R11, a set of the transmission path T12 and the reception path R12, and a set of the transmission path T2 and the reception path R2 is selectable by the first switch 21. One of the transmission paths T11 and T12 is selectable by the second switch 22. One of the reception paths R11 and R12 is selectable by the third switch 23. One of the transmission path T2 and the reception path R2 is selectable by the fourth switch 24.
To transmit the transmission signal by using, for example, the transmission path T11, the set of the transmission path T11 and the reception path R11 is selected by the first switch 21 from among the three sets, and the transmission path T11 is selected by the second switch 22 out of the transmission paths T11 and T12. Thus, the transmission signal from the signal processing circuit 301 is transmitted from the antenna 310 through the transmission path T11.
To receive the reception signal by using, for example, the reception path R12, the set of the transmission path T12 and the reception path R12 is selected by the first switch 21 from among the three sets, and the reception path R12 is selected by the third switch 23 out of the reception paths R11 and R12. Thus, the reception signal received by the antenna 310 is outputted from the signal output terminal 83A to the signal processing circuit 301 through the reception path R12, and is subjected to signal processing by the signal processing circuit 301.
An example of the structure of the high-frequency module 1 is described with reference to
In the following description, a thickness direction D1 of the mounting board 3 may be referred to as “first direction D1” as illustrated in
On the drawing sheet of
As illustrated in
The mounting board 3 is a board where the plurality of electronic components 4 is disposed, and has, for example, a rectangular plate shape. The mounting board 3 has the first principal surface 31 and the second principal surface 32 facing each other in the thickness direction D1 of the mounting board 3. For example, the first principal surface 31 and the second principal surface 32 each have a rectangular shape.
The mounting board 3 is a board having a plurality of layers (multilayer board) including a plurality of dielectric layers 37 and a plurality of conductive layers (not illustrated). The plurality of dielectric layers and the plurality of conductive layers are laminated in the thickness direction D1 of the mounting board 3. The plurality of conductive layers is formed in patterns predetermined for the individual layers. For example, the mounting board 3 is an LTCC (Low Temperature Co-fired Ceramics) board. The mounting board 3 is not limited to the LTCC board, and may be, for example, a printed wiring board, an HTCC (High Temperature Co-fired Ceramics) board, or a resin multilayer board.
The mounting board 3 includes the second ground electrode 34, a plurality of vias 35 (thermal vias), and a plurality of pad electrodes (not illustrated) in addition to the plurality of layers described above.
The second ground electrode 34 is a part that functions as a ground layer of the mounting board 3, and is provided inside the mounting board 3. The second ground electrode 34 may be provided on the second principal surface 32 of the mounting board 3. When the high-frequency module 1 is disposed on an external board 304 (for example, a motherboard), the second ground electrode 34 is connected to a ground of the external board 304 and kept at a ground potential (reference potential). The second ground electrode 34 has a layer shape (film shape) to extend parallel to the first principal surface 31 of the mounting board 3. Both end portions of the second ground electrode 34 in the second direction D2 are exposed from the mounting board 3 on an outer peripheral surface 33 of the mounting board 3.
The plurality of vias 35 is, for example, columnar conductive members and provided inside the mounting board 3. The plurality of vias 35 connects the external connection electrodes 8 disposed on the second principal surface 32 of the mounting board 3 to the second ground electrode 34. The upper end surface of the via 35 (end surface on the first principal surface 31 side) is connected to (for example, in contact with) the second ground electrode 34, and the lower end surface of the via 35 (end surface on the second principal surface 32 side) is exposed from the second principal surface 32 and connected to (for example, in contact with) the external connection electrode 8.
The plurality of pad electrodes is, for example, conductive members having a flat-plate shape to which external terminals (not illustrated) of the electronic components 4 are connected. The plurality of pad electrodes is disposed on the first principal surface 31 of the mounting board 3. The plurality of pad electrodes is connected to the plurality of conductive layers of the mounting board 3 described above.
The plurality of electronic components 4 includes the power amplifiers 11A and 11B, the low-noise amplifiers 14A and 14B, the transmission filters 12A and 12B, the reception filters 15A and 15B, and the transmission/reception filter 17. The plurality of electronic components 4 further includes the first switch 21, the third switch 23, the fourth switch 24, the output matching circuits 13A and 13B, the matching circuits 18A, 18B, and 18C, the input matching circuits 16A and 16B, the matching circuit 19, and an IC chip 26. The IC chip 26 is a semiconductor device including the controller 20 and the second switch 22 in a single chip.
The plurality of electronic components 4 is disposed on the first principal surface 31 of the mounting board 3. The description “A (for example, the electronic component 4) is disposed on the first principal surface 31 of the mounting board 3” herein means not only that A is mounted directly on the first principal surface 31, but also that A is disposed in the space on the first principal surface 31 side that is separated by the mounting board 3 out of the space on the first principal surface 31 side and the space on the second principal surface 32 side that are separated by the mounting board 3. That is, the description inclusively means that A is mounted on the first principal surface 31 with other circuit elements and electrodes interposed therebetween.
More specifically, the plurality of electronic components 4 includes external terminals (not illustrated). The plurality of electronic components 4 is disposed on the first principal surface 31 of the mounting board 3 such that the external terminals are connected to the pad electrodes provided on the first principal surface 31 of the mounting board 3. The description “A (for example, the external terminal) is connected to B (for example, the pad electrode)” herein means not only that A is in contact with B, but inclusively that A and B are electrically connected to each other via a conductive electrode, a conductive terminal, a wire, or any other circuit component. In this embodiment, the external terminal of the electronic component 4 and the pad electrode on the first principal surface 31 of the mounting board 3 are connected to each other via a connection member 44 made of a conductor (for example, a solder bump).
The example of
Referring back to
More specifically, the plurality of external connection electrodes 8 is disposed at the peripheral edge and the center of the second principal surface 32 of the mounting board 3 as illustrated in
In this embodiment, specific external connection electrodes 8P out of the plurality of external connection electrodes 8 are connected to the second ground electrode 34 of the mounting board 3 (see
As illustrated in
Referring back to
The transmission/reception filter 17 includes a substrate 170, a circuit portion (not illustrated), and external terminals (not illustrated). For example, the substrate 170 has a flat-plate shape. The substrate 170 has the first principal surface 171 and a second principal surface 172 facing each other. The first principal surface 171 is a principal surface opposite to the mounting board 3 (referred to also as “top surface”). The second principal surface 172 is a principal surface on the mounting board 3 side (referred to also as “back surface”). For example, the substrate 170 is a silicon substrate or a piezoelectric substrate. The circuit portion includes a circuit that performs a filtering process on the transmission signal and the reception signal. The circuit portion is disposed on the second principal surface 172 of the substrate 170. The external terminal is a part connected to the pad electrode of the mounting board 3 described above via the connection member 44, and is disposed on the second principal surface 172 of the substrate 170.
In this embodiment, the first principal surface 121A of the transmission filter 12A (first electronic component) and the first principal surface 171 of the transmission/reception filter 17 (first electronic component) are connected to the first ground electrode 6 as described later. Therefore, the first principal surface 121A of the transmission filter 12A and the first principal surface 171 of the transmission/reception filter 17 are higher in terms of the height from the first principal surface 31 of the mounting board 3 than the first principal surfaces (principal surfaces opposite to the mounting board 3) of the other electronic components 4 disposed on the first principal surface 31 of the mounting board 3. The first principal surface 121A of the transmission filter 12A and the first principal surface 171 of the transmission/reception filter 17 are disposed on the same plane.
The first resin layer 51 is provided on the first principal surface 31 of the mounting board 3. The first resin layer 51 covers at least a part of the outer surfaces (outer peripheral surface and top surface (principal surface opposite to the mounting board 3) of each of the plurality of electronic components 4 disposed on the first principal surface 31 of the mounting board 3. More specifically, the first resin layer 51 exposes the first principal surfaces 121A and 171 of the transmission filter 12A and the transmission/reception filter 17 and covers parts other than the first principal surfaces 121A and 171. That is, the first resin layer 51 covers at least a part of the outer peripheral surfaces of the transmission filter 12A and the transmission/reception filter 17 (for example, the entire outer peripheral surfaces). The first resin layer 51 covers the entire electronic components 4 other than the transmission filter 12A and the transmission/reception filter 17 out of the plurality of electronic components 4. The first resin layer 51 contains a resin. The first resin layer 51 may contain a filler in addition to the resin.
For example, the first ground electrode 6 is made of a metal. The first ground electrode 6 covers at least a part of an outer peripheral surface 512 of the first resin layer 51 (entire outer peripheral surface 512 in the example of
More specifically, the first ground electrode 6 includes a principal surface electrode 61 and a plurality of (for example, four) lateral surface electrodes 62 as illustrated in
As described above in this embodiment, the first principal surfaces (first principal surfaces 171 and 121A in the example of
More specifically, the first principal surface 171 of the transmission/reception filter 17 is connected to the first ground electrode 6 as illustrated in
Similarly, the first principal surface 121A of the transmission filter 12A is connected to the first ground electrode 6. The first ground electrode 6 is connected to both the end portions of the second ground electrode 34 of the mounting board 3 in the second direction D2. Thus, as illustrated in
The heat generation amounts of the specific electronic components 4 disposed on the transmission paths T11, T12, and T2 are larger than those of the electronic components 4 disposed on the reception paths R11, R12, and R2. Therefore, the heat dissipation performance for the specific electronic components 4 is improved by connecting the first principal surfaces (for example, the first principal surfaces 171 and 121A) of the specific electronic components 4 (for example, the transmission/reception filter 17 and the transmission filter 12A) disposed on the transmission paths T11, T12, and T2 to the second ground electrode 34 via the first ground electrode 6 as described above. In this embodiment, the first principal surface 171 of the transmission/reception filter 17 and the first principal surface 121A of the transmission filter 12A are connected to the first ground electrode 6 as an example, but the first principal surfaces (principal surfaces opposite to the mounting board 3) of the electronic components 4 other than the transmission/reception filter 17 and the transmission filter 12A may be connected to the first ground electrode 6.
The high-frequency module 1 according to this embodiment includes the mounting board 3, the first electronic components (for example, the transmission/reception filter 17 and the transmission filter 12A), the first resin layer 51, and the first ground electrode 6. The mounting board 3 has the first principal surface 31 and the second principal surface 32 facing each other. The first electronic components 17 and 12A are disposed on the first principal surface 31 of the mounting board 3. The first resin layer 51 is provided on the first principal surface 31 of the mounting board 3 so as to cover at least a part of the outer surfaces of the first electronic components 17 and 12A. The first ground electrode 6 covers at least a part of the outer surface of the first resin layer 51. The principal surfaces 171 and 121A of the first electronic components 17 and 12A opposite to the mounting board 3 are connected to the first ground electrode 6. The mounting board 3 includes the second ground electrode 34. The first ground electrode 6 is connected to the second ground electrode 34.
In this structure, the principal surfaces 171 and 121A of the first electronic components 17 and 12A opposite to the mounting board 3 are connected to the first ground electrode 6, and the first ground electrode 6 is connected to the second ground electrode 34. Thus, the heat Q1 and the heat Q2 generated by the first electronic components 17 and 12A can be dissipated to the second ground electrode 34 through the first ground electrode 6. As a result, the heat dissipation performance for the first electronic components 17 and 12A can be improved.
Modifications of the embodiment described above are described. In the following description, the same constituent elements as those in the embodiment described above are represented by the same reference signs as those of the constituent elements in the embodiment described above and description thereof is omitted. Constituent elements different from those in the embodiment described above are mainly described. The modifications described below may be combined.
As illustrated in
The phrase “four sides 341 to 344 associated with the four lateral surface electrodes 62 (621 to 624)” inclusively means at least the four sides 341 to 344 facing the four lateral surface electrodes 621 to 624. The external shape of the second ground electrode 34 described above is an external shape viewed in the thickness direction D1 of the mounting board 3.
In the example of
In the first modification, for example, the two sides 341 and 342 facing each other in the third direction D3 out of the four sides 341 to 344 of the second ground electrode 34 are in contact with the first ground electrode 6. Therefore, the thermal conduction between the first ground electrode 6 and the second ground electrode 34 can be improved compared with a case where two adjacent sides (for example, the sides 341 and 342) out of the four sides 341 to 344 of the second ground electrode 34 are in contact with the first ground electrode 6.
In the first modification, the sides 341 and 343 of the second ground electrode 34 are in contact with the associated lateral surface electrodes 621 and 623 in the parts 345 and 347 of the sides 341 and 343. As illustrated in
In the first modification, the two sides 341 and 344 out of the four sides 341 to 344 of the second ground electrode 34 are in contact with the associated lateral surface electrodes 621 and 624 in half or more parts of the sides. As illustrated in
As illustrated in
More specifically, the plurality of (two in the example of
In the second modification, each of the heat Q1 and the heat Q2 generated by the transmission/reception filter 17 (first electronic component) and the transmission filter 12A (first electronic component) is dissipated by being transferred from each of the first principal surfaces 171 and 121A to the first ground electrode 6 and from the first ground electrode 6 to the plurality of second ground electrodes 34 in parallel. Thus, the heat Q1 and the heat Q2 can quickly be dissipated to the second ground electrodes 34. As a result, the heat dissipation performance for the transmission/reception filter 17 and the transmission filter 12A can further be improved.
The plurality of second ground electrodes 34 is connected to each other with the vias 35 interposed therebetween. Therefore, the overall thermal capacity of the second ground electrodes 34 in the second modification increases compared with the embodiment described above. Thus, the heat Q1 and the heat Q2 can be dissipated to the second ground electrodes 34 more quickly. As a result, the heat dissipation performance for the transmission/reception filter 17 and the transmission filter 12A can further be improved. Although all the plurality of second ground electrodes 34 in the second modification are provided inside the mounting board 3, it is only necessary that at least one of the plurality of second ground electrodes 34 be provided inside the mounting board 3. For example, in a case of two second ground electrodes 34, one second ground electrode 34 may be provided inside the mounting board 3 and the other one second ground electrode 34 may be provided on the surface of the mounting board 3 (one principal surface out of the principal surfaces on both sides).
As illustrated in
More specifically, the first ground electrode 6 covers the entire outer peripheral surface 33 of the mounting board 3, and further covers the lateral surfaces of the external connection electrodes 8P disposed at both edge portions of the second principal surface 32 of the mounting board 3 in the second direction D2. The first ground electrode 6 is connected to the external connection electrodes 8P by covering the lateral surfaces of the external connection electrodes 8P.
In the third modification, the heat Q1 and the heat Q2 generated by the transmission/reception filter 17 (first electronic component) and the transmission filter 12A (first electronic component) are dissipated by being transferred from the first ground electrode 6 to at least one of the plurality of second ground electrodes 34 as with the second modification. In the third modification, the heat Q1 and the heat Q2 are dissipated by being transferred further from the first ground electrode 6 to the external connection electrodes 8P. Thus, the number of the heat dissipation paths for the heat Q1 and the heat Q2 in the third modification increases compared with the second modification. As a result, the heat dissipation performance for the transmission/reception filter 17 and the transmission filter 12A can further be improved.
As illustrated in
In the fourth modification, the heat Q1 and the heat Q2 generated by the transmission/reception filter 17 (first electronic component) and the transmission filter 12A (first electronic component) are transferred to the first ground electrode 6 via the metal members 10A and 10B, respectively. That is, with the metal members 10A and 10B, the heat Q1 and the heat Q2 can quickly be transferred from the transmission/reception filter 17 and the transmission filter 12A to the metal members 10A and 10B, respectively. Thus, the heat dissipation performance for the transmission/reception filter 17 and the transmission filter 12A can further be improved.
As illustrated in
More specifically, the power amplifier 11A includes a substrate 110A, a circuit portion (not illustrated), and external terminals (not illustrated). For example, the substrate 110A has a flat-plate shape. The substrate 110A has the first principal surface 111A and a second principal surface 112A facing each other. The first principal surface 111A is a principal surface opposite to the mounting board 3 (referred to also as “top surface”). The second principal surface 112A is a principal surface on the mounting board 3 side (referred to also as “back surface”). For example, the substrate 110A is a gallium arsenide (GaAs) substrate. The circuit portion includes a circuit for amplifying the transmission signal. The circuit portion is disposed on the second principal surface 112A of the substrate 110A. The external terminal is a part connected to the pad electrode of the mounting board 3 described above via the connection member 44, and is disposed on the second principal surface 112A of the substrate 110A. The first principal surface 111A of the power amplifier 11A is exposed from the first resin layer 51 at the one principal surface 511 of the first resin layer 51, and is connected to the first ground electrode 6. That is, in the fifth modification, the first resin layer 51 covers at least a part of the first principal surface 111A of the power amplifier 11A (entire first principal surface 111A in the example of
The mounting board 3 according to the fifth modification includes a through via 35A (thermal via). The through via 35A transfers the heat Q4 generated by the power amplifier 11A to the external connection electrode 8P. The through via 35A is disposed at a part directly below the power amplifier 11A inside the mounting board 3 (that is, a part overlapping the power amplifier 11A in the thickness direction D1 of the mounting board 3). The through via 35A passes through the mounting board 3 in the thickness direction D1. The upper end portion of the through via 35A is connected to the external terminal (not illustrated) of the power amplifier 11A via the connection member 44. The lower end portion of the through via 35A is connected to the external connection electrode 8P disposed on the second principal surface 32 of the mounting board 3. In the fifth modification, the through via 35A is connected to the second ground electrode 34, but need not be connected to the second ground electrode 34.
In the fifth modification, the partial heat Q3 generated by the power amplifier 11A (first electronic component) is dissipated by being transferred from the first principal surface 111A of the power amplifier 11A to the first ground electrode 6 and from the first ground electrode 6 to the second ground electrode 34. Thus, the heat dissipation performance for the power amplifier 11A is improved. The partial heat Q4 generated by the power amplifier 11A is dissipated by being transferred from the power amplifier 11A to the external connection electrode 8P through the connection member 44 and the through via 35A. Thus, the heat dissipation performance for the power amplifier 11A is further improved.
As illustrated in
The electromagnetic shielding wall 7 is a conductive member that is disposed between the plurality of electronic components 4 on the first principal surface 31 of the mounting board 3 and achieves the electromagnetic shielding between the plurality of electronic components 4. The electromagnetic shielding wall 7 is a conductive member set at the ground potential. In the sixth modification, the electromagnetic shielding wall 7 is disposed between, for example, the transmission/reception filter 17 and the transmission filter 12A in plan view in the thickness direction D1 of the mounting board 3. The description “C (for example, the electromagnetic shielding wall 7) is disposed between A (for example, the transmission/reception filter 17) and B (for example, the transmission filter 12A) in plan view in the thickness direction D1 of the mounting board 3” herein means that at least one of a plurality of line segments each connecting an arbitrary point in A and an arbitrary point in B in plan view in the thickness direction D1 of the mounting board 3 passes through an area of C. The plan view in the thickness direction D1 of the mounting board 3 means that the electronic component disposed on the mounting board 3 is viewed by being orthographically projected to a plane parallel to the principal surface of the mounting board 3.
The electromagnetic shielding wall 7 is provided upright in the thickness direction D1 of the mounting board 3 from the first principal surface 31 of the mounting board 3. The end surface of the electromagnetic shielding wall 7 opposite to the mounting board 3 is connected to the first ground electrode 6.
The through via 35B connects the electromagnetic shielding wall 7 and the external connection electrode 8P. The through via 35B is disposed at a part directly below the electromagnetic shielding wall 7 inside the mounting board 3 (that is, a part overlapping the electromagnetic shielding wall 7 in the thickness direction D1 of the mounting board 3). The through via 35B passes through the mounting board in the thickness direction D1. The upper end portion of the through via 35B is connected to the based end surface of the electromagnetic shielding wall 7. The lower end portion of the through via 35B is connected to the external connection electrode 8P disposed on the second principal surface 32 of the mounting board 3. In the sixth modification, the through via 35B is connected to the second ground electrode 34, but need not be connected to the second ground electrode 34.
In the sixth modification, a thickness d1 of the first ground electrode 6 is, for example, 10 μm. A thickness d2 of the electromagnetic shielding wall 7 is, for example, 50 μm. A diameter d3 of the through via 35B is, for example, 10 μm or more and 50 μm or less. A width d4 of the external connection electrode is, for example, 200 μm or more and 1000 μm or less. As understood from those examples of numerical values, the thickness d2 of the electromagnetic shielding wall 7 is more than the thickness d1 of the first ground electrode 6. Therefore, the heat is efficiently transferred from the first ground electrode 6 to the electromagnetic shielding wall 7. The width d4 of the external connection electrode 8P is more than the diameter d3 of the through via 35B. Therefore, the heat is efficiently transferred from the through via 35B to the external connection electrode 8P.
In the sixth modification, a part of the heat generated by the transmission/reception filter 17 (first electronic component) and the transmission filter 12A (first electronic component) is dissipated to the second ground electrode 34 as with the heat Q1 and the heat Q2 in the embodiment described above. Further, the heat Q11 and the heat Q21 that are parts of the heat generated by the transmission/reception filter 17 and the transmission filter 12A are transferred from the respective first principal surfaces 171 and 121A to the first ground electrode 6 and dissipated from the first ground electrode 6 to the external connection electrode 8P through the electromagnetic shielding wall 7 and the through via 35B. Thus, the number of the heat dissipation paths for the heat generated by the transmission/reception filter 17 and the transmission filter 12A can be increased compared with the embodiment described above. Accordingly, the heat dissipation performance for the transmission/reception filter 17 and the transmission filter 12A can further be improved.
In the sixth modification, the electromagnetic shielding wall 7 is disposed closer to the transmission/reception filter 17 and the transmission filter 12A than the lateral surface electrodes 62 of the first ground electrode 6. Therefore, the heat dissipation paths for the heat Q11 and the heat Q21 described above are shorter than the heat dissipation paths for the heat Q1 and the heat Q2 described in the embodiment described above. Thus, the majority of the heat generated by the transmission/reception filter 17 and the transmission filter 12A is dissipated through the heat dissipation paths for the heat Q11 and the heat Q21 described above rather than through the heat dissipation paths for the heat Q1 and the heat Q2 described in the embodiment described above. That is, the heat generated by the transmission/reception filter 17 and the transmission filter 12A is dissipated through the shorter heat dissipation paths. Accordingly, the heat dissipation performance for the transmission/reception filter 17 and the transmission filter 12A can still further be improved.
In the embodiment described above, the case where the high-frequency module 1 has the single-sided mounting structure (structure in which the electronic components are mounted only on one side of the mounting board 3) (see
In the seventh modification, the electronic components 4 are disposed on both the first principal surface 31 and the second principal surface 32 of the mounting board 3 as illustrated in
In the seventh modification, the high-frequency module 1 further includes a plurality of connection terminals 9 and a second resin layer 52.
The plurality of connection terminals 9 is, for example, columnar conductive members each connecting a pad electrode (not illustrated) provided on the second principal surface 32 of the mounting board 3 and the external connection electrode 8.
The second resin layer 52 is provided on the second principal surface 32 of the mounting board 3. The second resin layer 52 covers at least a part of each of the plurality of electronic components 4 and the plurality of connection terminals 9 disposed on the second principal surface 32 of the mounting board 3. In the example of FIG. 15, the second resin layer 52 exposes one principal surface 41 of each of the plurality of electronic components 4 from one principal surface 521 of the second resin layer 52, and covers parts other than the one principal surface 41 of each electronic component 4. The one principal surface 41 of the electronic component 4 is a principal surface of the electronic component 4 opposite to the mounting board 3. The second resin layer 52 may cover the plurality of entire electronic components 4 disposed on the second principal surface 32 of the mounting board 3. The second resin layer 52 exposes the lower end surfaces of the plurality of connection terminals 9 from the one principal surface 521 of the second resin layer 52, and covers parts other than the lower end surfaces of the connection terminals 9. The lower end surface of the connection terminal 9 described above is an end surface opposite to the mounting board 3. The second resin layer 52 contains a resin. The second resin layer 52 may contain a filler in addition to the resin. The second resin layer 52 may be made of the same material as or a different material from that of the first resin layer 51.
In the seventh modification, the plurality of external connection electrodes 8 is disposed on the one principal surface 521 of the second resin layer 52 and connected to the lower end surfaces of the plurality of connection terminals 9 described above. The one principal surface 521 of the second resin layer 52 is a principal surface opposite to the mounting board 3.
In the seventh modification, the first ground electrode 6 covers the outer surfaces of the first resin layer 51 (one entire principal surface 511 and entire outer peripheral surface 512) and the entire outer peripheral surface 33 of the mounting board 3. Further, the first ground electrode 6 covers a part of an outer peripheral surface 523 of the second resin layer 52 (more specifically, a half or more area in the thickness direction D1 of the mounting board 3 from an upper side toward a lower side of the outer peripheral surface 523). The upper side of the outer peripheral surface 523 described above is a side of the outer peripheral surface 523 on the mounting board 3 side. The lower side of the outer peripheral surface 523 described above is a side of the outer peripheral surface 523 opposite to the mounting board 3. In other words, a lower end portion 6t of the first ground electrode 6 is disposed on the external connection electrode 8P side relative to the center of the second resin layer 52 in the thickness direction D1. The first ground electrode 6 is connected to both the end portions of the second ground electrode 34 in the second direction D2 on the outer peripheral surface 33 of the mounting board 3. The first ground electrode 6 is not in contact with the external connection electrodes 8.
In the seventh modification, the heat Q1 and the heat Q2 generated by the transmission/reception filter 17 (first electronic component) and the transmission filter 12A (first electronic component) are dissipated by being transferred from the respective first principal surfaces 171 and 121A to the first ground electrode 6 and from the first ground electrode 6 to the second ground electrode 34 as with the embodiment described above. Thus, the heat dissipation performance for the transmission/reception filter 17 and the transmission filter 12A is improved as with the embodiment described above.
In the seventh modification, the second ground electrode 34 is connected to the first ground electrode 6. Therefore, the electromagnetic shielding performance of the second ground electrode 34 is improved. Thus, a further electromagnetic shielding can be provided between the front and back of the mounting board 3 by the second ground electrode 34.
As illustrated in
More specifically, the first ground electrode 6 covers the entire outer peripheral surface 523 of the second resin layer 52, and further covers the lateral surfaces of the external connection electrodes 8P disposed at both edge portions of the one principal surface 521 of the second resin layer 52 in the second direction D2 in the seventh modification. The first ground electrode 6 is connected to the external connection electrodes 8P by covering the lateral surfaces of the external connection electrodes 8P.
In the eighth modification, the heat Q1 and the heat Q2 generated by the transmission/reception filter 17 (first electronic component) and the transmission filter 12A (first electronic component) are dissipated by being transferred from the first ground electrode 6 to at least one of the plurality of second ground electrodes 34 as with the seventh modification. In the eighth modification, the heat Q1 and the heat Q2 are dissipated by being transferred further from the first ground electrode 6 to the external connection electrodes 8P. Thus, the number of the heat dissipation paths for the heat Q1 and the heat Q2 in the eighth modification increases compared with the seventh modification. As a result, the heat dissipation performance for the transmission/reception filter 17 and the transmission filter 12A can further be improved.
The following aspects are invented herein.
A high-frequency module (1) according to a first aspect includes a mounting board (3), a first electronic component (17, 12A; 11A), a first resin layer (51), and a first ground electrode (6). The mounting board (3) has a first principal surface (31) and a second principal surface (32) facing each other. The first electronic component (17, 12A; 11A) is disposed on the first principal surface (31) of the mounting board (3). The first resin layer (51) is disposed on the first principal surface (31) of the mounting board (3), and covers at least a part of an outer peripheral surface of the first electronic component (17, 12A; 11A). The first ground electrode (6) covers at least a part of the first resin layer (51). A principal surface (171, 121A; 111A) of the first electronic component (17, 12A; 11A) opposite to the mounting board (3) is connected to the first ground electrode (6). The mounting board (3) includes a second ground electrode (34) inside the mounting board (3). The first ground electrode (6) is connected to the second ground electrode (34).
In this structure, the principal surface (171, 121A; 111A) of the first electronic component (17, 12A; 11A) opposite to the mounting board (3) is connected to the first ground electrode (6), and the first ground electrode (6) is connected to the second ground electrode (34). Thus, the heat (Q1, Q2; Q3) generated by the first electronic component (17, 12A; 11A) can be dissipated to the second ground electrode (34) through the first ground electrode (6). As a result, the heat dissipation performance for the first electronic component (17, 12A; 11A) can be improved.
In the high-frequency module (1) according to a second aspect, in the first aspect, the first electronic component (17, 12A; 11A) is provided on a transmission path (T2, R2, T11; T1) along which a transmission signal passes.
In this structure, the first electronic component (17, 12A; 11A) is provided on the transmission path (T2, R2, T11; T1), and is therefore an electronic component of a transmission system. Thus, the heat dissipation performance for the electronic component of the transmission system can be improved.
In the high-frequency module (1) according to a third aspect, in the first or second aspect, the first electronic component (17, 12A; 11A) is a transmission filter (12A), a transmission/reception filter (17), or a power amplifier (11A).
In this structure, the heat dissipation performance for the transmission filter (12A), the transmission/reception filter (17), or the power amplifier (11A) can be improved.
In the high-frequency module (1) according to a fourth aspect, in any one of the first to third aspects, the first ground electrode (6) includes a plurality of lateral surface electrodes (62) disposed on an outer peripheral surface of the mounting board (3). When viewed in a thickness direction (D1) of the mounting board (3), an external shape of the second ground electrode (34) includes a plurality of sides (341 to 344) associated with the plurality of lateral surface electrodes (621 to 624). At least one side (for example, 341, 343) out of the plurality of sides (341 to 344) is in contact with the lateral surface electrode (621, 623) associated with the one side in a half or more part of the one side.
In this structure, when the side (341, 343) of the second ground electrode (34) is in contact with the lateral surface electrode (621, 623) of the first ground electrode (6), a sufficient contact area can be provided therebetween.
In the high-frequency module (1) according to a fifth aspect, in any one of the first to fourth aspects, when viewed in a thickness direction (D1) of the mounting board (3), an external shape of the second ground electrode (34) includes at least two sides (341, 343) facing each other. The second ground electrode (34) is in contact with the first ground electrode (6) on the two sides (341, 343).
In this structure, the heat dissipation performance for the heat dissipated from the first ground electrode (6) to the second ground electrode (34) can be improved.
In the high-frequency module (1) according to a sixth aspect, in any one of the first to fourth aspects, when viewed in a thickness direction (D1) of the mounting board (3), an entire external shape of the second ground electrode (34) is in contact with the first ground electrode (6).
In this structure, a sufficient contact area can be provided between the first ground electrode (6) and the second ground electrode (34).
In the high-frequency module (1) according to a seventh aspect, in any one of the first to sixth aspects, a plurality of the second ground electrodes (34) is provided to the mounting board (3) in a thickness direction (D1) of the mounting board (3). At least one of the plurality of the second ground electrodes (34A, 34B) is provided inside the mounting board (3). The plurality of the second ground electrodes (34) is connected to each other. The first ground electrode (6) is connected to at least one of the plurality of the second ground electrodes (34).
In this structure, the heat dissipation performance for the heat dissipated from the first ground electrode (6) to the second ground electrode (34) can be improved.
The high-frequency module (1) according to an eighth aspect, in any one of the first to seventh aspects, further includes a metal member (10A, 10B) disposed between the principal surface (171, 121A) of the first electronic component (17, 12A) opposite to the mounting board (3) and the first ground electrode (6). The principal surface (171, 121A) of the first electronic component (17, 12A) is connected to the first ground electrode (6) via the metal member (10A, 10B).
In this structure, the heat (Q1, Q2) generated by the first electronic component (17, 12A) can efficiently be transferred to the first ground electrode (6) by the metal member.
The high-frequency module (1) according to a ninth aspect, in any one of the first to eighth aspects, further includes an external connection electrode (8P) disposed on the second principal surface (32) of the mounting board (3). The first ground electrode (6) is connected to the external connection electrode (8P).
In this structure, the heat (Q1, Q2; Q3) generated by the first electronic component (17, 12A; 11A) can be dissipated also to the external connection electrode (8P) through the first ground electrode (6). Thus, the heat dissipation performance for the first electronic component (17, 12A; 11A) can further be improved.
The high-frequency module (1) according to a tenth aspect, in any one of the first to ninth aspects, further includes an external connection electrode (8P) and a thermal via (35A). The external connection electrode (8P) is disposed on the second principal surface (32) of the mounting board (3). The thermal via (35A) passes through the mounting board (3) in a thickness direction (D1) of the mounting board (3). The thermal via (35A) is connected to the first electronic component (11A) via a connection member (44) and to the external connection electrode (8P).
In this structure, the heat generated by the first electronic component (11A) can be dissipated to the second ground electrode (34) through the first ground electrode (6) and also to the external connection electrode (8P) through the thermal via (35A). As a result, the heat dissipation performance for the first electronic component (11A) can further be improved.
In the high-frequency module (1) according to an eleventh aspect, in the tenth aspect, the thermal via (35A) is connected to the second ground electrode (34).
In this structure, the heat generated by the first electronic component (11A) can be dissipated also to the second ground electrode (34) through the thermal via (35A). As a result, the heat dissipation performance for the first electronic component (11A) can further be improved.
The high-frequency module (1) according to a twelfth aspect, in any one of the first to ninth aspects, further includes a second electronic component (12A, 17), a conductive member (7), an external connection electrode (8P), and a thermal via (35B). The second electronic component (12A, 17) is disposed on the first principal surface (31) of the mounting board (3). The conductive member (7) is disposed between the first electronic component (17, 12A) and the second electronic component (12A, 17) on the first principal surface (31) of the mounting board (3), an end surface of the conductive member (7) opposite to the mounting board (3) is connected to the first ground electrode (6), and the conductive member (7) is set at a ground potential. The external connection electrode (8P) is disposed on the second principal surface (32) of the mounting board (3). The thermal via (35B) is provided inside the mounting board (3) and connects the electromagnetic shielding wall (7) and the external connection electrode (8P).
In this structure, the heat (Q11, Q21) generated by the first electronic component (17, 12A) can be dissipated also to the external connection electrode (8P) through the first ground electrode (6), the electromagnetic shielding wall (7), and the thermal via (35B). Thus, the heat dissipation performance for the first electronic component (17, 12A) can further be improved.
In the high-frequency module (1) according to a thirteenth aspect, in any one of the first to twelfth aspects, a third electronic component (20, 14A) is disposed on the second principal surface (32) of the mounting board (3). A second resin layer (52) is provided on the second principal surface (32) so as to cover at least a part of an outer surface of the third electronic component (20, 14A).
In this structure, the present disclosure can be applied to a case where the mounting board (3) has a double-sided mounting structure. Since the second ground electrode (34) is connected to the first ground electrode (6) as described in the first aspect, the electromagnetic shielding performance of the second ground electrode (34) is improved. Therefore, when the present disclosure is applied to the case where the mounting board (3) has the double-sided mounting structure, a sufficient electromagnetic shielding can be provided between the front and back of the mounting board (3) the second ground electrode (34).
In the high-frequency module (1) according to a fourteenth aspect, in the thirteenth aspect, the first ground electrode (6) covers a half or more area of an outer peripheral surface (523) of the second resin layer (52) in a thickness direction (D1) of the mounting board (3).
In this structure, the heat dissipation area of the first ground electrode (6) can be enlarged. Further, it is possible to reduce the occurrence of a case where an electromagnetic wave from the third electronic component (20, 14A) leaks to the outside from the outer peripheral surface (523) of the second resin layer (52).
The high-frequency module (1) according to a fifteenth aspect, in the fourteenth aspect, further includes an external connection electrode (8P) disposed on a principal surface (521) of the second resin layer (52) opposite to the mounting board (3). The first ground electrode (6) is connected to the external connection electrode (8P).
In this structure, in the case where the mounting board (3) has the double-sided mounting structure, the heat (Q1, Q2; Q3) generated by the first electronic component (17, 12A; 11A) can be dissipated to the second ground electrode (34) through the first ground electrode (6) and also to the external connection electrode (8P) through the first ground electrode (6). Thus, the heat dissipation performance for the first electronic component (17, 12A; 11A) can further be improved.
A communication device (300) according to a sixteenth aspect includes the high-frequency module (1) in any one of the first to fifteenth aspects and a signal processing circuit (301). The signal processing circuit (301) processes a high-frequency signal that passes through the high-frequency module (1).
In this structure, it is possible to provide the communication device (300) having the effects of the high-frequency module (1) described above.
Number | Date | Country | Kind |
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2021-074438 | Apr 2021 | JP | national |
This is a continuation of International Application No. PCT/JP2022/017828 filed on Apr. 14, 2022 which claims priority from Japanese Patent Application No. 2021-074438 filed on Apr. 26, 2021. The contents of these applications are incorporated herein by reference in their entireties.
Number | Date | Country | |
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Parent | PCT/JP2022/017828 | Apr 2022 | US |
Child | 18493069 | US |