Claims
- 1. A read only memory device with a high dielectric constant tunneling dielectric layer, comprising:
a substrate; a tunneling dielectric layer, disposed over the substrate, wherein the tunneling dielectric layer is formed with a material selected from the group consisting of HfSiON and HfOxNy; an electron trapping layer, disposed over the tunneling dielectric layer; a top oxide layer, disposed over the electron trapping layer, wherein the tunneling dielectric layer, the electron trapping layer and the top oxide layer form a stacked structure; a conductive layer, disposed at least over the top oxide layer; and a buried drain region, configured in the substrate beside both sides of the stacked structure.
- 2. The read only memory device with a high dielectric constant tunneling dielectric layer of claim 1, wherein a dielectric constant of the tunneling dielectric layer is greater than a dielectric constant of silicon dioxide.
- 3. The read only memory device with a high dielectric constant tunneling dielectric layer of claim 1, wherein a buried drain oxide layer is further disposed over the buried drain region beside both sides of the stacked structures.
- 4. The read only memory device with a high dielectric constant tunneling dielectric layer of claim 1, wherein the electron trapping layer comprises silicon nitride.
- 5. The read only memory device with a high dielectric constant tunneling dielectric layer of claim 1, wherein the tunneling dielectric layer is formed with a material selected from the group consisting of ZrO2, HfO2 and ZrOxNy.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional of a prior application Ser. No. 10/248,179, filed Dec. 24, 2002.
Divisions (1)
|
Number |
Date |
Country |
Parent |
10248179 |
Dec 2002 |
US |
Child |
10711004 |
Aug 2004 |
US |