Claims
- 1. A high resistivity semiconductor resistor device comprising, in combination, a semiconductor region of one conductivity type, an insulating layer located on a surface of said semiconductor region, a shallow high resistivity region having a depth of no greater than about 0.5 microns located in said semiconductor region of one conductivity type and in contact with said insulating layer, said shallow high resistivity region having a higher resistivity than said semiconductor region of one conductivity type and containing impurities of opposite conductivity type, a pair of spaced semiconductor resistor contact regions having a depth greater than said shallow high resistivity region and having the same conductivity as said shallow high resistivity region located in contact with said semiconductor region of one conductivity type, said shallow high resistivity region being in electrical contact with each one of said pair of semiconductor resistor contact regions, and an electrical ohmic contact to each one of said pair of semiconductor resistor contact regions, said shallow high resistivity region being in direct semiconductor contact with only one of said pair of semiconductor resistor contact regions, an elongated connecting semiconductor region of the same conductivity type as said shallow high resistivity region in contact with said shallow high resistivity region and the other of said pair of semiconductor resistor contact regions, said connecting semiconductor region being of lower resistivity than said shallow high resistivity region, and long sides of said elongated connecting semiconductor region forming a PN junction with said semiconductor region of one conductivity type.
- 2. A high resistivity semiconductor resistor device comprising, in combination, a semiconductor region of one conductivity type, an insulating layer located on a surface of said semiconductor region, a shallow high resistivity region having a depth of no greater than about 0.5 microns located located in said semiconductor region of one conductivity type and in contact with said insulating layer, said shallow high resistivity region having a higher resistivity than said semiconductor region of one conductivity type and containing impurities of opposite conductivity type, a pair of spaced semiconductor resistor contact regions having a depth greater than said shallow high resistivity region and having the same conductivity as said shallow high resistivity region located in contact with said semiconductor region of one conductivity type, said shallow high resistivity region being in electrical contact with each one of said pair of semiconductor resistor contact regions, and an electrical ohmic contact to each one of said pair of semiconductor resistor contact regions, said shallow high resistivity region being located between said pair of semiconductor resistor contact regions, a first elongated semiconductor region of lower resistivity and of the same conductivity type as said shallow high resistivity region connected to one end portion of said shallow high resistivity region and to one of said pair of spaced semiconductor resistor contact regions, a second elongated semiconductor region of lower resistivity and of the same conductivity type as said shallow high resistivity region connected to the other end portion of said shallow high resistivity region and to the other of said pair of spaced semiconductor resistor contact regions, long sides of said first and second elongated semiconductor regions forming PN junctions with said semiconductor region of one conductivity type.
Parent Case Info
This is a division of application Ser. No. 805,534, filed June 10, 1977 now U.S. Pat. 4,152,627.
US Referenced Citations (6)
Divisions (1)
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Number |
Date |
Country |
Parent |
805534 |
Jun 1977 |
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