S. Prussin, et al., Role of Ion Mass, Implant Dose, and Wafer Temperature on End-of-Range Defects, J. Electrochem. Soc., vol. 137, No. 6, pp 1912-1914, The Electrochemical Society, Inc., Jun. 1990. |
E. D'Anna, et al., Multilayer Titanium Nitride and Silicide Structures Synthesized by Multipulse Excimer Laser Irradiation, elsevier Science Publishers B. V., pp 353-357, Appliced Surface Science 54, 1992. |
V. Bohac, et al., Tungsten Silicide Formation by XeCl Excimer-Laser Irradiation of S/Si Samples, Applied Physics A. Solids and Surfaces, pp. 391-396, Applied Physics A 56, 1993. |
E. d'Anna, et al., Laser Synthesis of Metal Silicides, Applied PhysicsA, Solids and Surfaces, pp. 325-335, Applied Physics A 45, 1988. |
Richard B. Fair, Damage Removal/Dopant Diffusion Tradeoffs in Ultra-Shallow Implanted p+-n Junctions, IEEE Transactions on Electron Devices, vol. 37, No. 10, pp. 2237-2242, Oct. 1990. |
Toshimitsu Akane, et al., Two-Step Doping Using Excimer Laser in Boron Doping of Silicon, Jpn. J. Appl. Phys., vol. 31, part 1, No. 12B, pp. 4437-4440, Dec. 1992. |
P. G. Carey, et al., A Shallow Junction Submicrometer PMOS Process Without High-Temperature Anneals, IEEE Electron Device Letter, vol. 9 No. 10,pp. 542-544. Oct. 1988. |
S. Acco, et al., Avoiding End-of range Dislocations in Ion-implanted Silicon, Elsevier Science S. A., Materials Science and Engineering B34, pp. 168-174, 1995. |
Somit Talwar, et al., Ultra-Shallow, Abrupt, and Highly-Activated Junctions by Low-Energy Ion Implantation and Laser Annealing, Proceedings of the 13th International Conference on Ion Implantation Technology, IEEE, pp 1171-1174, 1999. |