1. Field of the Invention
The present invention generally relates to an optical film structure, and more particularly relates to a high-temperature-durable optical film structure.
2. Description of the Prior Art
Thin-film optics has been an important branch of the modern optics, and the fabrication of the optical thin film has become a new emerging industry. At present, various optical thin films are applied to a lot of optical systems and photoelectric systems, and widely used in the people's daily life.
A traditional optical thin film 10 is made of two or more materials using evaporation or sputtering. As shown in
As illustrated in
Accordingly, the present invention is directed to a high-temperature-durable optical film structure and a fabrication method thereof. In one embodiment, passage structures are formed on the multi-layer thin film to provide a space for releasing the thermal stress to reduce the possibility of the optical film structure from deforming and peeling at high temperature. An optical film structure using the passage structures may resist high temperature and serve as a high-temperature-durable optical thin film device.
In one embodiment, a high-temperature-durable optical film structure comprises a substrate and an optical layer structure. The optical layer structure is formed on a surface of the substrate and has a plurality of passage structures. The passage structures divide the optical layer structure into a plurality of optical blocks.
In one embodiment, a method for fabricating a high-temperature-durable optical film structure comprises the steps of providing a substrate, forming an optical layer structure on a surface of the substrate and forming a plurality of passage structures on the optical layer structure.
The foregoing aspects and many of the accompanying advantages of this invention will become more readily appreciated as the same becomes better understood by reference to the following detailed description, when taken in conjunction with the accompanying drawings, wherein:
a is a SEM vertical view using low magnifying power to illustrate the traditional optical thin film;
b is a SEM vertical view using high magnifying power to illustrate the traditional optical thin film;
c is a SEM lateral view using high magnifying power to illustrate the traditional optical thin film;
a is a SEM vertical view using low magnifying power to illustrate the traditional optical thin film after baking to 1200° C.;
b is a SEM vertical view using high magnifying power to illustrate the traditional optical thin film after baking to 1200° C.;
c is a SEM lateral view using high magnifying power to illustrate the traditional optical thin film after baking to 1200° C.;
a to
a to
a and
a and
In the present example embodiment, the passage structures 36 comprise crossed passages. In the present example embodiment, the shape of the optical blocks 38 is square and may be arranged in square configuration. In other example embodiments, the shape of the optical blocks 38 may be triangular, circular or polygonal shape, or any other shape, and may be arranged in triangle, hexagon or polygon configuration.
Furthermore, the material of the multi-layer thin film structure 34 may include Ta2O5, TiO2, Nb2O5, Al2O3, SiO2 or MgF, or their combinations. The use waveband of the multi-layer thin film structure 34 comprises X-ray, far-ultraviolet (EUV), ultraviolet, visible light, infrared, near-infrared or far-infrared. Further, the widths of the passage structures 36 may be proportional to the area of every optical block 38. In the present example embodiment, when the materials of the multi-layer thin film structure 34 and the transparent substrate 32 are the same, the widths of the passage structures 36 are directly proportion to the tolerance temperature of the optical film structure 30. In the present example embodiment, the width of the passage structures 36 is larger than or equal to 0.01 μm.
In the present invention, when the multi-layer thin film structure 34 is expanded due to the high process temperature, the passage structures 36 can be used as a space for releasing the thermal stress and thereby reduce the possibility of the film 38 from deforming and peeling. Furthermore, a following high-temperature-durable optical thin film device may be fabricated without any deformation and peeling.
a to
Wherein, the protruded stop layers 42 are formed by photolithography, nano imprint lithography or microcontact printing process. The multi-layer thin film structure 34 is etched by performing a plasma etching process, and the plasma source comprises direct current, alternate current, radio frequency, microwave or ion bombardment.
a and
a and
To sum up, the optical film structure of the present invention may sustain the high temperature fabrication processes, and an optical thin film device formed from the optical film structure may be effectively operated in a high temperature operating condition. For example, when the optical film structure is applied to a filter of a solar cell, the filter may sustain the temperature as high as 1000 degree celsius, which may be attained by focusing the solar intensity one thousand times on one square centimeter area. Therefore, the solar collector and the solar filter of the solar cell may be operated for a long duration of time without using any additional heat sink. Additionally, the optical film structure can also be applied to an optical filter of a mini-projector to replace the traditional optical filter so as to gain the advantages of the filter and enduring high temperature. Furthermore, the optical film structure may also be fabricated on an epitaxy growth substrate to serve as a high-temperature-durable high reflection mirror, and then a LED luminescent material is epitaxially grown on the high reflection mirror. Therefore, the high reflection mirror may be used to achieve multiple internal reflection of light from the back of the LED to increase the efficiency of luminance.
While the invention is susceptible to various modifications and alternative forms, a specific example thereof has been shown in the drawings and is herein described in detail. It should be understood, however, that the invention is not to be limited to the particular form disclosed, but to the contrary, the invention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the appended claims.
Number | Date | Country | Kind |
---|---|---|---|
97147498 | Dec 2008 | TW | national |