“Energy-Efficient Removal of Gaseous LPCVD ByProducts,” Process Technology Limited PTL News Spring 1986 vol. 1, No. 3 (3 pages). |
Adams, A, C., “Plasma Deposition of Inorganic Films,” Solid State Technology, Dec. 1980 (5 pages). |
Adams, A.C., “Silicon Nitride and Other Insulator Films,” Plasma Deposited Thin Films 1986 pp. 130-133; 156-159. |
Bailin, Lionel J., Sibert, Merle E., Jonas, Leonard A. and Bell, Alex T., “Microwave Decomposition of Toxic Vapor Simulants,” Environmental Science and Technology, vol. 9, No. 3, Mar. 1975 pp. 254-257. |
Bell, Alexis T., “Techniques and Applications of Plasma Chemistry,” Chapter 1: Fundamentals of Plasma Chemistry pp. 1-49, Published by John Wiley & Son, Inc. 1974. |
Boenig, Ph.D., Herman V., “Fundamentals of Plasma Chemistry and Technology,” Properties of Glow Discharge Plasma pp. 49-53, VI Plasma Chemistry, pp. 55-74, VIII Plasma Enhanced Deposition of Films pp. 89-133 published by Technomic Publishing Company 1988. |
Chiu, K. C. Ray, “Plasma Etch Process Modeling: Application to A1 Etch Process Development,” 1983 pp. 294-299. |
Chiu, K.C. Ray, “Modeling of BPSG Film Deposition” (16 pages). |
Chiu, K.C. Ray, Dunton, S.V. and , Snow, W.R., “Plasma Etch Process Modeling,”1983 pp. 74-81. |
Clothiaux, Eugene J. , Koropchak, John A. and Moore, Robert R., “Decomposition of an Organophosphorous Material in a Silent Electrical Discharge,” Plasma Chemistry and Plasma Processing, vol. 4, No. 1. 1984 pp. 15-21. |
d'Agostino, Riccardo, Cramarossa, Francesco and De Benedictis, Santolo, “Chemical Mechanisms in C3F8-H2 Radiofrequency Discharges,” Plasma Chemistry and Plasma Processing, vol. 4, No. 1, 1984. |
Flamm, Daniel L., “The Oxidation of Methane Traces, Formation of Ozone and Formation of Nox in RF Glow and DC Corona Discharges,” TUPAC International Symposium on Plasma Chemistry, Limoges, France, Jul. 1977. |
Fraser, Mark E., Fee, Daniel A., and Sheinson, Ronald S., “Decomposition of Methane in an AC Discharge,” Plasma Chemistry and Plasma Processing, vol. 5, No. 2 1985 pp. 163-173. |
Gorczyca, T. B. and Gorowitz, B., VLSI Electronics Microstructure Science, vol. 8 Chapter 4: “Plasma-Enhanced Chemical Vapor Deposition of Dielectrics,” Plasma Processing for VLSI 1984 CRC Press, Inc. pp. 69-76. |
Hammond, M.L., “Safety in Chemical Vapor Deposition,” Solid State Technology Dec. 1980 (5 pages). |
Hirose, Masataka, Plasma Deposited Thin Films Chapter 2: “Plasma-Deposited Films; Kinetics of Formation, Composition, and Microstructure,” 1986 pp. 28-32; 42-43. |
Jacob, Adir, “Plasma Processing—An Art or a Science?” (5 pages). |
Johnson, Wayne L., “Design of Plasma Deposition Reactors,” Solid State Technology Apr. 1983 pp. 191-195. |
Kern, Werner and Rosler, Richard S., Technical Report: “Advances in Deposition Processes for Passivation Films” 1977 Applied Materials, Inc. pp. 1092-1094. |
Matteson, Michael J., Stringer, Hugh L. and Busbee, Walter L., Abstract: “Corona Discharge Oxidation of Sulfur Dioxide,” Environmental Sci. Tech. 6, 895 (1972) (1 page). |
Raoux, S., Fodor, M. A., Taylor, W. N., Cheung, D. and Fairbaim, K., “A Plasma Reactor for Solid Waste Treatment on PECVD Production Systems”, Mat. Res. Soc. Symp. Proc. vol. 447 (1997 Materials Research Society) pp. 101-105. |
Raoux, S., Cheung, D., Fodor, M., Taylor, W. N. and Fairbaim, K., “Growth, Trapping and Abatement of Dielectric Particles in PECVD Systems,” Plasma Sources Sci. Technol. 6 (1997) pp. 405-414. |
Reif, R., “Plasma-Enhanced Chemical Vapor Deposition of Silicon Epitoxial Layers,” J. Electrochem. Soc.: Solid-State and Technology Oct. 1984 pp. 2430-2435. |
Siebert, M.E., Final Comprehensive Report: “Vapor DEcomposition by Microwave Discharge,”Sep. 1971 pp. 1-61. |
Singer, Peter H., “Pre-pump Scrubbers Simplify Maintenance and Improve Safety,” Semiconductor International Mar. 1992 pp. 72-74. |
Venugopalan, M., “Reaction Under Plasma Conditions—vol. 2,” Chapter Eleven: Plasma Chemistry-An Introduction pp. 1-31 Published by John Wiley *& Sons, Inc. 1971. |