Claims
- 1. A hot carrier transistor, comprising:(a) an emitter; (b) a base; (c) a collector, said collector forming a heterojunction with said base; and (d) an injector connected between said emitter and said base, said injector including tunneling barriers with bandgap larger than the bandgaps of said emitter and of said base and also including a quantum well between said tunneling barriers with a portion having a bandgap smaller than the bandgaps of said emitter and of said base.
- 2. The hot carrier transistor of claim 1, wherein:(a) the common emitter current gain of said transistor is at least 10 at room temperature.
- 3. The hot carrier transistor of claim 1, wherein:(a) said emitter is made of indium gallium arsenide; (b) said base is made of indium gallum arsenide; (c) said collector is made of indium aluminum gallium arsenide; (d) said tunneling barriers are made of aluminum arsenide; and (e) said portion is made of indium arsenide.
- 4. The hot carrier transistor of claim 3, wherein:(a) the dimensions of said injector yield a resonant energy level for electrons which is greater than the conduction band edge energy level of said collector and which is less than the X and L valley minima of the conduction band of said base.
Parent Case Info
This application is a continuation of application Ser. No. 07/954,611 filed Sep. 30, 1992 and now abandoned, which is a continuation of application Ser. No. 07/726,070 filed Jul. 5, 1991 and now abandoned, which is a continuation of application Ser. No. 07/567,847, filed Aug. 15, 1990 and now abandoned.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
4712121 |
Yokoyama |
Dec 1987 |
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Continuations (3)
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Number |
Date |
Country |
Parent |
07/954611 |
Sep 1992 |
US |
Child |
08/263180 |
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US |
Parent |
07/726070 |
Jul 1991 |
US |
Child |
07/954611 |
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US |
Parent |
07/567847 |
Aug 1990 |
US |
Child |
07/726070 |
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US |