Comprising only semiconductor materials

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H01L29/155

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/155Comprising only semiconductor materials

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure and semiconductor device
- Patent number 12,176,430
- Issue date Dec 24, 2024
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device and method thereof
- Patent number 12,051,756
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jiun-Yun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency (RF) semiconductor devices including a ground plane...
- Patent number 12,020,926
- Issue date Jun 25, 2024
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making radio frequency (RF) semiconductor devices inclu...
- Patent number 12,014,923
- Issue date Jun 18, 2024
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a fin-shaped active region and a gate ele...
- Patent number 12,015,086
- Issue date Jun 18, 2024
- Samsung Electronics Co., Ltd.
- Jae-hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor with multiple nitride regions of different im...
- Patent number 11,955,520
- Issue date Apr 9, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial layers with discontinued aluminium content for III-nitrid...
- Patent number 11,942,521
- Issue date Mar 26, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Peng-Yi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and high electron mobility transistor
- Patent number 11,942,519
- Issue date Mar 26, 2024
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced interfacial area III-nitride material semiconductor structures
- Patent number 11,942,518
- Issue date Mar 26, 2024
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a superlattice and enriched silicon...
- Patent number 11,923,418
- Issue date Mar 5, 2024
- ATOMERA INCORPORATED
- Marek Hytha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical devices making use of counterdoped junctions
- Patent number 11,888,079
- Issue date Jan 30, 2024
- Quantum Semiconductor LLC
- Carlos Jorge R. P. Augusto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice FINFET with tunable drive current capability
- Patent number 11,881,511
- Issue date Jan 23, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor light-emitting element and method of manufact...
- Patent number 11,876,148
- Issue date Jan 16, 2024
- Nichia Corporation
- Takuya Okada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heteroepitaxial wafer and method for producing a heteroepitaxial wafer
- Patent number 11,869,942
- Issue date Jan 9, 2024
- Siltronic AG
- Sarad Bahadur Thapa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained superlattice
- Patent number 11,848,357
- Issue date Dec 19, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterned silicon substrate-silicon germanium, thin film composite...
- Patent number 11,769,799
- Issue date Sep 26, 2023
- Institute of Physics, Chinese Academy of Sciences
- Jianjun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making radio frequency (RF) semiconductor devices inclu...
- Patent number 11,742,202
- Issue date Aug 29, 2023
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate voltage-tunable electron system integrated with superconductin...
- Patent number 11,683,996
- Issue date Jun 20, 2023
- International Business Machines Corporation
- Sean Hart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic circuit with indium nitride quantum well
- Patent number 11,670,637
- Issue date Jun 6, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate voltage-tunable electron system integrated with superconductin...
- Patent number 11,621,386
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Sean Hart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor thin film structures and electronic devices including...
- Patent number 11,581,269
- Issue date Feb 14, 2023
- Samsung Electronics Co., Ltd.
- Younghwan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in 3-D microfabricated structures
- Patent number 11,569,384
- Issue date Jan 31, 2023
- STMicroelectronics, Inc.
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oscillator
- Patent number 11,496,095
- Issue date Nov 8, 2022
- Canon Kabushiki Kaisha
- Toshifumi Yoshioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical devices making use of counterdoped junctions
- Patent number 11,424,382
- Issue date Aug 23, 2022
- Quantum Semiconductor LLC
- Carlos Jorge R. P. Augusto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-spacers for quantum dot device gates
- Patent number 11,424,324
- Issue date Aug 23, 2022
- Intel Corporation
- Hubert C. George
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High electron mobility transistor
- Patent number 11,355,626
- Issue date Jun 7, 2022
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivated transistors
- Patent number 11,342,440
- Issue date May 24, 2022
- Northrop Grumman Systems Corporation
- Ishan Wathuthanthri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure
- Patent number 11,335,780
- Issue date May 17, 2022
- GlobalWafers Co., Ltd.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with polarization layer superlattice for target threshol...
- Patent number 11,329,132
- Issue date May 10, 2022
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with lattice structure
- Patent number 11,158,722
- Issue date Oct 26, 2021
- GLOBALFOUNDRIES U.S. INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SUPERLATTICE EPITAXIAL STRUCTURE WITH VARYING LATTICE PARAMETER DIF...
- Publication number 20240379765
- Publication date Nov 14, 2024
- GAN SYSTEMS INC.
- Claudio Andres Canizares
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED HEMT DEVICE, DEVICE EPITAXIAL STRUCTURE, AND PREPARATION...
- Publication number 20240355916
- Publication date Oct 24, 2024
- Genettice (Qingdao) Semiconductor Materials Co., Ltd.
- Wang MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY DEVICE AND METHOD THEREOF
- Publication number 20240339547
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiun-Yun LI
- G11 - INFORMATION STORAGE
Information Patent Application
RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE...
- Publication number 20240321575
- Publication date Sep 26, 2024
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...
- Publication number 20240304443
- Publication date Sep 12, 2024
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240290888
- Publication date Aug 29, 2024
- Samsung Electronics Co., Ltd.
- Jae-hoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240266402
- Publication date Aug 8, 2024
- Samsung Electronics Co., Ltd.
- Taegon KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE MATERIAL SEMICONDUCTOR STRUCTURES ON CONDUCTIVE SILICON...
- Publication number 20240266405
- Publication date Aug 8, 2024
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERLATTICE BUFFER STRUCTURE AND SEMICONDUCTOR DEVICE HAVING THE SAME
- Publication number 20240213327
- Publication date Jun 27, 2024
- Samsung Electronics Co., Ltd.
- Boram KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND ENRICHED SILICON...
- Publication number 20240170539
- Publication date May 23, 2024
- ATOMERA INCORPORATED
- MAREK HYTHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR DEVICE
- Publication number 20240128325
- Publication date Apr 18, 2024
- Kabushiki Kaisha Toshiba
- Hajime NAGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240105825
- Publication date Mar 28, 2024
- PANJIT INTERNATIONAL INC.
- Hung Shen Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IM...
- Publication number 20240096969
- Publication date Mar 21, 2024
- Kabushiki Kaisha Toshiba
- Toshiki HIKOSAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240072123
- Publication date Feb 29, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Liyang ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADED SUPERLATTICE STRUCTURE FOR GATE ALL AROUND DEVICES
- Publication number 20230420521
- Publication date Dec 28, 2023
- Applied Materials, Inc.
- Yi-Chiau HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO INDUCE STRAIN IN 3-D MICROFABRICATED STRUCTURES
- Publication number 20230352586
- Publication date Nov 2, 2023
- STMicroelectronics, Inc.
- Nicolas LOUBET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...
- Publication number 20230352299
- Publication date Nov 2, 2023
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTORS FOR LOW VOLTAGE AND LOW TEMPERATU...
- Publication number 20230317718
- Publication date Oct 5, 2023
- Intel Corporation
- Abhishek Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRINGE-GATED CASTELLATED FET
- Publication number 20230307533
- Publication date Sep 28, 2023
- Northrop Grumman Systems Corporation
- Kevin M. Frey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES
- Publication number 20230299146
- Publication date Sep 21, 2023
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE EPITAXIAL STRUCTURE AND SEMICONDUCTOR DEVICE
- Publication number 20230290742
- Publication date Sep 14, 2023
- HUAWEI TECHNOLOGIES CO., LTD.
- Zhibin Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
STRAINED SUPERLATTICE
- Publication number 20230238431
- Publication date Jul 27, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR DEVICE
- Publication number 20230178643
- Publication date Jun 8, 2023
- Industrial Technology Research Institute
- Shih-Chin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME
- Publication number 20230141135
- Publication date May 11, 2023
- Samsung Electronics Co., Ltd.
- Junga LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
- Publication number 20230089919
- Publication date Mar 23, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20230065755
- Publication date Mar 2, 2023
- Samsung Electronics Co., Ltd.
- Sangmoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20230066042
- Publication date Mar 2, 2023
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMATION OF A SIGE/SI SUPERLATTICE
- Publication number 20230029344
- Publication date Jan 26, 2023
- Applied Materials, Inc.
- John TOLLE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY DEVICE AND METHOD THEREOF
- Publication number 20230020015
- Publication date Jan 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiun-Yun LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods of Making Same
- Publication number 20220406894
- Publication date Dec 22, 2022
- Georgia Tech Research Corporation
- Russell Dean Dupuis
- H01 - BASIC ELECTRIC ELEMENTS

Comprising only semiconductor materials

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure and semiconductor device

Flash memory device and method thereof

Radio frequency (RF) semiconductor devices including a ground plane...

Methods for making radio frequency (RF) semiconductor devices inclu...

Semiconductor device with a fin-shaped active region and a gate ele...

Nitride semiconductor with multiple nitride regions of different im...

Epitaxial layers with discontinued aluminium content for III-nitrid...

Semiconductor structure and high electron mobility transistor

Reduced interfacial area III-nitride material semiconductor structures

Semiconductor device including a superlattice and enriched silicon...

Electrical devices making use of counterdoped junctions

Superlattice FINFET with tunable drive current capability

Nitride semiconductor light-emitting element and method of manufact...

Heteroepitaxial wafer and method for producing a heteroepitaxial wafer

Strained superlattice

Patterned silicon substrate-silicon germanium, thin film composite...

Methods for making radio frequency (RF) semiconductor devices inclu...

Gate voltage-tunable electron system integrated with superconductin...

Logic circuit with indium nitride quantum well

Gate voltage-tunable electron system integrated with superconductin...

Semiconductor thin film structures and electronic devices including...

Method to induce strain in 3-D microfabricated structures

Oscillator

Electrical devices making use of counterdoped junctions

Multi-spacers for quantum dot device gates

High electron mobility transistor

Passivated transistors

Epitaxial structure

Transistor with polarization layer superlattice for target threshol...

Transistors with lattice structure

Patents Applicationslast 30 patents

SUPERLATTICE EPITAXIAL STRUCTURE WITH VARYING LATTICE PARAMETER DIF...

GAN-BASED HEMT DEVICE, DEVICE EPITAXIAL STRUCTURE, AND PREPARATION...

FLASH MEMORY DEVICE AND METHOD THEREOF

RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE...

METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

III-NITRIDE MATERIAL SEMICONDUCTOR STRUCTURES ON CONDUCTIVE SILICON...

SUPERLATTICE BUFFER STRUCTURE AND SEMICONDUCTOR DEVICE HAVING THE SAME

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND ENRICHED SILICON...

SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IM...

SEMICONDUCTOR STRUCTURE

GRADED SUPERLATTICE STRUCTURE FOR GATE ALL AROUND DEVICES

METHOD TO INDUCE STRAIN IN 3-D MICROFABRICATED STRUCTURES

METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...

JUNCTION FIELD EFFECT TRANSISTORS FOR LOW VOLTAGE AND LOW TEMPERATU...

FRINGE-GATED CASTELLATED FET

SEMICONDUCTOR STRUCTURES

NITRIDE EPITAXIAL STRUCTURE AND SEMICONDUCTOR DEVICE

STRAINED SUPERLATTICE

HIGH ELECTRON MOBILITY TRANSISTOR DEVICE

EPITAXIAL WAFER AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE AND HIGH ELECTRON MOBILITY TRANSISTOR

METHODS OF FORMATION OF A SIGE/SI SUPERLATTICE

FLASH MEMORY DEVICE AND METHOD THEREOF

Semiconductor Devices and Methods of Making Same