not carrying the current to be rectified, amplified or switched

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CPC
H01L29/423

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/423not carrying the current to be rectified, amplified or switched

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Size-controllable multi-stack semiconductor device and method of ma...
- Patent number 12,224,314
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Gunho Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench transistor
- Patent number 12,224,329
- Issue date Feb 11, 2025
- Robert Bosch GmbH
- Christian Tobias Banzhaf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT with stair-like compound layer at drain
- Patent number 12,224,333
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,224,341
- Issue date Feb 11, 2025
- Hyundai Motor Company
- NackYong Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor including an active region and methods for forming the same
- Patent number 12,224,352
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Wu-Wei Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device including multiple channel layers w...
- Patent number 12,224,357
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Jinyeong Joe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,225,716
- Issue date Feb 11, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Qu Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SONOS memory cell structure and fabricating method of the same
- Patent number 12,225,729
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Yung-Ting Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device using gate-through imp...
- Patent number 12,224,211
- Issue date Feb 11, 2025
- SK keyfoundry Inc.
- Hee Hwan Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 12,224,348
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with gate-source ESD diode structure
- Patent number 12,224,311
- Issue date Feb 11, 2025
- Diodes Incorporated
- Wan-Yu Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of buried wordline structure
- Patent number 12,224,323
- Issue date Feb 11, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Yong Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming backside power rails
- Patent number 12,224,324
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,331
- Issue date Feb 11, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with cross shape active layer surrounded by word line
- Patent number 12,225,710
- Issue date Feb 11, 2025
- SK Hynix Inc.
- Il Do Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and manufacturing methods of the same
- Patent number 12,225,725
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- So Hyeon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,224,209
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Cheng Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for control of sidewall orientation in vertical g...
- Patent number 12,224,344
- Issue date Feb 11, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device
- Patent number 12,225,719
- Issue date Feb 11, 2025
- SOCIONEXT INC.
- Yasumitsu Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing 3D semiconductor devices and structures with t...
- Patent number 12,225,737
- Issue date Feb 11, 2025
- Monolithic 3D Inc.
- Deepak C. Sekar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting display device and manufacturing method thereof
- Patent number 12,225,770
- Issue date Feb 11, 2025
- Samsung Display Co., Ltd.
- Keun Woo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,319
- Issue date Feb 11, 2025
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,345
- Issue date Feb 11, 2025
- Kabushiki Kaisha Toshiba
- Kentaro Ichinoseki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with bottom dielectric isolation
- Patent number 12,224,312
- Issue date Feb 11, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having word line structure
- Patent number 12,224,328
- Issue date Feb 11, 2025
- NANYA TECHNOLOGY CORPORATION
- Cheng-Yan Ji
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with gate dielectric formed using selective de...
- Patent number 12,224,334
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung-Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with gate-all-around...
- Patent number 12,224,350
- Issue date Feb 11, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active zones with offset in semiconductor cell
- Patent number 12,224,278
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guo-Huei Wu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three-dimensional semiconductor device and method of fabricating th...
- Patent number 12,218,133
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wiring in diffusion breaks in an integrated circuit
- Patent number 12,218,135
- Issue date Feb 4, 2025
- Tokyo Electron Limited
- Lars Liebmann
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20250056782
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tao CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20250056821
- Publication date Feb 13, 2025
- Ming-Chuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250056838
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Seo Woo Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION METAL PATTERNING AND GATE CUT FOR NANOSHEET DEVICE
- Publication number 20250056849
- Publication date Feb 13, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250056868
- Publication date Feb 13, 2025
- United Microelectronics Corp.
- Ming-Hua Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERNARY CONTENT-ADDRESSABLE MEMORY CELLS AND METHODS FOR FORMING TH...
- Publication number 20250054546
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Gerben Doornbos
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH IMPROVED CHARGE LATERAL MIGRAT...
- Publication number 20250056804
- Publication date Feb 13, 2025
- Yangtze Memory Technologies Co., Ltd.
- Xiaoxin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY-ARRANGED GATE ALL AROUND TRANSISTORS HAVING UNIFORM CELL...
- Publication number 20250056828
- Publication date Feb 13, 2025
- Micron Technology, Inc.
- Si-Woo LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CAPACITANCE GATE-ALL-AROUND TRANSISTOR WITH TUNABLE CAPACI...
- Publication number 20250056839
- Publication date Feb 13, 2025
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20250056840
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250056841
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jih-Chao CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH CONDUCT...
- Publication number 20250056848
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chu-Yuan HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN REGIONS IN COMPLEMENTARY FIELD EFFECT TRANSISTORS AND...
- Publication number 20250056852
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056861
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- SOOJIN JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE BACKSIDE ISOLATION FEATURE INTEGRATION
- Publication number 20250056865
- Publication date Feb 13, 2025
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056866
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon-Jhy LIAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20250056877
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-SHU HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE, INTEGRATED CIRCUIT LAYOUT AND SYSTEM FOR...
- Publication number 20250056895
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Jui CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH CONDUCTIVE VIA FORMATION ON SELF-ALIGNED GA...
- Publication number 20250054765
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE/NANOSHEET DEVICE WITH CRYSTAL SPACER AND METHOD OF MANUFAC...
- Publication number 20250056850
- Publication date Feb 13, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH NON-VOLATILE MEMORY CELL AND MANUFACTURIN...
- Publication number 20250056863
- Publication date Feb 13, 2025
- SK keyfoundry Inc.
- Min Kuck CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-COUPLED GATE DESIGN FOR STACKED DEVICE WITH SEPARATED TOP-DOW...
- Publication number 20250056873
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Seunghyun SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250056827
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Jaejoon OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...
- Publication number 20250056824
- Publication date Feb 13, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20250054859
- Publication date Feb 13, 2025
- NANYA TECHNOLOGY CORPORATION
- YING-CHENG CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ENHANCED PLACEHOLDER POSITION MARGIN
- Publication number 20250056864
- Publication date Feb 13, 2025
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING SPACER STRUCTURE FOR TRANSISTORS
- Publication number 20250056867
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP SEMICONDUCTOR DEVICE
- Publication number 20250056869
- Publication date Feb 13, 2025
- INFINEON TECHNOLOGIES AG
- Fabian RASINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Display device
- Publication number 20250056889
- Publication date Feb 13, 2025
- InnoLux Corporation
- Yun-Sheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20250054766
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS

not carrying the current to be rectified, amplified or switched

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Size-controllable multi-stack semiconductor device and method of ma...

Trench transistor

HEMT with stair-like compound layer at drain

Semiconductor device and method of manufacturing the same

Transistor including an active region and methods for forming the same

Semiconductor transistor device including multiple channel layers w...

Semiconductor device and manufacturing method thereof

SONOS memory cell structure and fabricating method of the same

Manufacturing method of semiconductor device using gate-through imp...

Semiconductor device structure and method for forming the same

Power MOSFET with gate-source ESD diode structure

Fabrication method of buried wordline structure

Method of forming backside power rails

Semiconductor device

Memory device with cross shape active layer surrounded by word line

Semiconductor devices and manufacturing methods of the same

Semiconductor device and manufacturing method thereof

Method and system for control of sidewall orientation in vertical g...

Semiconductor storage device

Method for producing 3D semiconductor devices and structures with t...

Light emitting display device and manufacturing method thereof

Semiconductor device

Semiconductor device

Field effect transistors with bottom dielectric isolation

Semiconductor device having word line structure

Semiconductor device with gate dielectric formed using selective de...

Self-aligned gate endcap (SAGE) architectures with gate-all-around...

Active zones with offset in semiconductor cell

Three-dimensional semiconductor device and method of fabricating th...

Wiring in diffusion breaks in an integrated circuit

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

INSULATED GATE BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

WORK FUNCTION METAL PATTERNING AND GATE CUT FOR NANOSHEET DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

TERNARY CONTENT-ADDRESSABLE MEMORY CELLS AND METHODS FOR FORMING TH...

THREE-DIMENSIONAL MEMORY DEVICE WITH IMPROVED CHARGE LATERAL MIGRAT...

VERTICALLY-ARRANGED GATE ALL AROUND TRANSISTORS HAVING UNIFORM CELL...

NEGATIVE CAPACITANCE GATE-ALL-AROUND TRANSISTOR WITH TUNABLE CAPACI...

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF

STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH CONDUCT...

SOURCE/DRAIN REGIONS IN COMPLEMENTARY FIELD EFFECT TRANSISTORS AND...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE BACKSIDE ISOLATION FEATURE INTEGRATION

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE

INTEGRATED CIRCUIT DEVICE, INTEGRATED CIRCUIT LAYOUT AND SYSTEM FOR...

INTEGRATED CIRCUIT WITH CONDUCTIVE VIA FORMATION ON SELF-ALIGNED GA...

NANOWIRE/NANOSHEET DEVICE WITH CRYSTAL SPACER AND METHOD OF MANUFAC...

SEMICONDUCTOR DEVICE WITH NON-VOLATILE MEMORY CELL AND MANUFACTURIN...

CROSS-COUPLED GATE DESIGN FOR STACKED DEVICE WITH SEPARATED TOP-DOW...

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR STRUCTURE WITH ENHANCED PLACEHOLDER POSITION MARGIN

INTEGRATED CIRCUIT INCLUDING SPACER STRUCTURE FOR TRANSISTORS

WIDE BAND GAP SEMICONDUCTOR DEVICE

Display device

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE