Patent Application
20090128886
1. Field
The present invention relates to an illumination optical apparatus for illuminating an illumination target object, an exposure apparatus having the illumination optical apparatus, and a device manufacturing method using the exposure apparatus.
2. Description of the Related Art
The conventional exposure apparatus, for example, described in Japanese Patent Application Laid-open No. 2002-353105 was proposed as an exposure apparatus to be used in manufacture of micro devices such as semiconductor integrated circuits. This exposure apparatus has an illumination optical apparatus for illuminating a mask such as a reticle on which a predetermined pattern is formed; and a projection optical apparatus for projecting a pattern image formed by illumination of the mask with the illumination optical apparatus, onto a substrate such as a wafer or a glass plate coated with a photosensitive material.
The illumination optical apparatus has a spatial light modulation member for adjusting a pupil luminance distribution on an illumination target surface of the mask. This spatial light modulation member has a plurality of reflecting optical elements arranged in an array form, and a reflecting surface of each reflecting optical element is coated with a reflecting film. Each reflecting optical element is so configured that exposure light from a light source is reflected toward the mask by the reflecting surface thereof.
Embodiments of the present invention provide an illumination optical apparatus, an exposure apparatus, and a device manufacturing method capable of contributing to increase in manufacture efficiency of devices with increase in output of the light source even in the case where the spatial light modulation member is arranged in the optical path of the light emitted from the light source.
For purposes of summarizing the invention, certain aspects, advantages, and novel features of the invention have been described herein. It is to be understood that not necessarily all such advantages may be achieved in accordance with any particular embodiment of the invention. Thus, the invention may be embodied or carried out in a manner that achieves or optimizes one advantage or group of advantages as taught herein without necessary achieving other advantages as may be taught or suggested herein.
An illumination optical apparatus according to an embodiment of the present invention is an illumination optical apparatus which guides light emitted from a light source and traveling along a predetermined optical path, to an illumination target object, the illumination optical apparatus comprising: a plurality of spatial light modulation members in which a plurality of reflecting optical elements each including a movable reflecting surface are arranged in an array form; wherein at least one of the spatial light modulation members is arranged in the optical path.
A general architecture that implements the various features of the invention will now be described with reference to the drawings. The drawings and the associated descriptions are provided to illustrate embodiments of the invention and not to limit the scope of the invention.
The first embodiment as a specific example of the present invention will be described below on the basis of
As shown in
The reticle stage 14 is arranged on the object plane side of the projection optical device 15 described later, so that a mounting surface of the reticle R is approximately perpendicular to the direction of the optical axis of the projection optical device 15. This projection optical device 15 has a barrel 17 internally filled with an inert gas such as nitrogen, and a plurality of lenses not shown are disposed along the optical path of the exposure light EL in this barrel 17. An image of the pattern on the reticle R illuminated with the exposure light EL is projected and transferred in a reduced state at a predetermined reducing rate through the projection optical device 15, onto the wafer W on the wafer stage 16. The optical path herein refers to a path in which light is intended to pass in a use state.
The illumination optical apparatus 13 of the present embodiment will be described below on the basis of
The illumination optical apparatus 13 is provided with a relay optical system 18 into which the exposure light EL emitted from the exposure light source 12 is incident. This relay optical system 18 is typically composed of a first positive lens 19, a negative lens 20, and a second positive lens 21 arranged along the optical axis AX1 in the order named from the exposure light source 12 side. The exposure light EL incident from the exposure light source 12 into the relay optical system 18 is emitted in an enlarged state of its sectional shape to the opposite side to the exposure light source 12.
In the illumination optical apparatus 13, a reflecting optical system 23 has a configuration in which a plurality of movable multi-mirrors 22 (only fifteen of which are illustrated in
The exposure light EL reflected on each movable multi-mirror 22 travels through a condenser optical system (distribution forming optical system) 26 arranged along the optical axis AX2 making a predetermined angle with the optical axis AX1 on the entrance side of each movable multi-mirror 22, into an optical integrator (fly's eye lens in the present embodiment) 27. The front focal point of the condenser optical system 26 is located near an arrangement plane P1 where each mirror element in each movable multi-mirror 22 is located, and the rear focal point of the condenser optical system 26 is located on a plane P2 near an entrance surface of the optical integrator 27. This optical integrator 27 has a configuration in which a plurality of lens elements 28 (only five of which are shown in
The exposure light EL emitted from the optical integrator 27, which consists of beams emitted from the large number of light source images, travels through a condenser optical system 29 to illuminate a mask blind 30 in a superposedly condensed state. The exposure light EL having passed through an aperture 31 of the mask blind 30 travels through a condenser optical system 32 to illuminate a reticle R. A pupil luminance distribution in an illumination region illuminated with the exposure light EL on the reticle R is appropriately adjusted.
In the present embodiment, the reticle R arranged on an illumination target surface of the illumination optical system IL is illuminated by Köhler illumination, using the secondary light source formed by the optical integrator 27, as a light source. For this reason, a position P3 where the secondary light source is formed is optically conjugate with a position P4 of an aperture stop AS of the projection optical system PL and the forming plane P3 of the secondary light source can be called an illumination pupil plane of the illumination optical system IL. Typically, the illumination target surface (a plane where the mask M is arranged, or a plane where the wafer W is arranged in the case where the illumination optical system is considered to include the projection optical system PL) is an optical Fourier transform plane of the illumination pupil plane.
In the present embodiment, a splitting mirror for reflecting part of the exposure light EL is provided on the exit side of the optical integrator 27 and an exposure amount sensor SE is provided so as to receive light reflected by the splitting mirror. The exposure amount can be controlled by monitoring the output of the exposure amount sensor SE1.
In the present embodiment, the wafer stage 16 is provided with a pupil luminance distribution detector SE2 for monitoring the pupil luminance distribution of exposure light arriving at the wafer W. The configuration of this pupil intensity distribution detector is disclosed, for example, in Japanese Patent Application Laid-open No. 2006-59834 and U.S. Pat. Published Application No. 2008/0030707 corresponding thereto. U.S. Pat Published Application No. 2008/0030707 is incorporated herein by reference.
The configuration of movable multi-mirror 22 will be described below on the basis of
As shown in
A drive unit for the mirror element 33 forming the first movable multi-mirror 22A will be described below on the basis of
As shown in
First electrode portions 40 extending in two directions perpendicular to the first axis S1 from the hinge member 38 are formed on the first end side and on the second end side, respectively, in the longitudinal direction of the hinge member 38. Second electrode portions 41 are also provided at respective positions corresponding to the four first electrode portions 40, on the base member 36. When a potential difference is made between each pair of first electrode portion 40 and second electrode portion 41 in a mutually corresponding relation, the hinge member 38 rotates around the first axis S1 because of electrostatic forces acting based on these potential differences, whereby the mirror element 33 rotates around the first axis S1. Namely, the inclination angle of mirror element 33 can be controlled by adjusting each of the potential differences between each of the pairs of electrode portions 40, 41 in the mutually corresponding relation.
The exposure light EL incident to each of the movable multi-mirrors 22A, 22B is folded into a direction corresponding to the inclination angle of each mirror element 33 to which the light is incident. Since the condenser optical system 26 which can be regarded as a distribution forming optical system has a function to convert the angle information of incident light into position information, the sectional shape of exposure light EL on the plane P2 near the entrance surface of the optical integrator 27 is changed into any size and shape by individually adjusting the inclination angles of the respective mirror elements 33. This condenser optical system 26 superimposes part of the exposure light EL having passed via the movable multi-mirrors 22A, and part of the exposure light having passed via the movable multi-mirrors 22B, at least in part on the plane P2. Since the exposure light beams from the plurality of movable multi-mirrors 22A, 22B are superimposed, it is feasible to enhance evenness of light intensity in the superimposed region.
In other words, the light spatially angle-modulated by the movable multi-mirrors 22A, 22B is converted into the spatially modulated light by the condenser optical system 26, to form the pupil intensity distribution as a desired light intensity distribution on the plane P2.
The pupil intensity distribution is a light intensity distribution (luminance distribution) on the illumination pupil plane of the illumination optical system or on a plane optically conjugate with the illumination pupil plane. When the number of wavefront divisions by the optical integrator 27 is relatively large, a high correlation is demonstrated between the overall light intensity distribution formed on the plane P2 near the entrance surface of the optical integrator 27 and the overall light intensity distribution (pupil intensity distribution) of the entire secondary light source. For this reason, light intensity distributions on the entrance surface of the optical integrator 27 and on the planes P3, P4 optically conjugate with the entrance surface can also be called pupil intensity distributions.
In this manner, the secondary light source with the light intensity distribution approximately equal to the exposure light EL with the sectional shape modified in the desired size and shape is formed on the plane P3 which is also the rear focal plane of the optical integrator 27. Furthermore, a light intensity distribution corresponding to the pupil intensity distribution formed on the plane P3 is also formed at other illumination pupil positions optically conjugate with the rear focal plane of the optical integrator 27, i.e., at the pupil position of the condenser optical system 32 and at the pupil position of the projection optical system PL.
The pupil intensity distribution can be, for example, a light intensity distribution of an annular shape or a multi-polar shape (dipolar, quadrupolar, or other shape). It is feasible to implement annular illumination with formation of the annular pupil intensity distribution, or to implement multi-polar illumination with formation of the multi-polar pupil intensity distribution.
In recent years, there are strong desires for increase in power of exposure light for achieving increase in efficiency of projection of the pattern image onto the substrate and enhancement of accuracy. It is, however, very difficult to coat the reflecting surface of each reflecting optical element forming the spatial light modulation member, with a reflecting film having relatively high durability. Therefore, the reflecting surface is coated with a reflecting film having relatively low durability. For this reason, the life of the spatial light modulation member becomes shorter because the reflecting film deteriorates earlier with increase in the intensity of the exposure light emitted from the light source and because a larger quantity of light reaches a drive portion of each reflecting optical element so as to cause breakage of the drive portion. The spatial light modulation member may be replaced earlier when the intensity of the exposure light is relatively high, than when the intensity of the exposure light is relatively low.
In the exposure apparatus of the configuration as described in Japanese Patent Application Laid-open No. 2002-353105, however, the spatial light modulation member may be replaced in a state in which the drive of the exposure apparatus is temporarily suspended. Therefore, the higher the intensity of the exposure light emitted from the light source, the earlier the timing of replacement of the spatial light modulation member; there was thus the concern of decrease in efficiency of manufacture of micro devices due to the increase in output of the light source in the exposure apparatus in which the spatial light modulation member was arranged in the optical path of the exposure light.
Therefore, the present embodiment achieves the effects described below.
(1) The exposure light EL emitted from the exposure light source 12 is reflected toward the condenser optical system 26 by all the movable multi-mirrors 22A, 22B forming the reflecting optical system 23 and guided to the reticle R. For this reason, even when the exposure light EL from the exposure light source 12 has a higher power, the intensity of exposure light EL incident to each movable multi-mirror 22A, 22B is lower than in the conventional case where the entire exposure light EL emitted from the exposure light source 12 is incident to one movable multi-mirror 22. As a consequence, deterioration of the reflecting film over the reflecting surface of each mirror element 33 to which the exposure light EL is incident becomes slower than in the conventional case, so as to lengthen the lives of the movable multi-mirrors 22A, 22B. Namely, the timing of replacement of the movable multi-mirrors 22A, 22B can be delayed. Therefore, a contribution can be made to increase in manufacture efficiency of semiconductor devices with increase in output of the exposure light source 12 even in the case where the movable multi-mirrors 22A, 22B are arranged in the optical path of exposure light EL emitted from the exposure light source 12.
(2) The rotating direction of the mirror elements 33 forming the first movable multi-mirrors 22A is different from the rotating direction of the mirror elements 33 forming the second movable multi-mirrors 22B. For this reason, degrees of freedom can be higher in change in the size and shape of exposure light EL to illuminate the reticle R, than in the case where the reflecting optical system 23 is composed of only one type of movable multi-mirrors 22 (e.g., the first movable multi-mirrors 22A).
(3) Since the angle α between the arrangement plane P1 and the entrance-side optical axis AX1 and the angle β between the arrangement plane P1 and the exit-side optical axis AX2 are so set as to direct zero-order reflected light N from the portions other than the mirror elements 33 of the movable multi-mirrors 22A, 22B (typically, gaps between mirror elements 33) and from the regions other than the effective regions 25 of the movable multi-mirrors 22A, 22B in the plane along the arrangement plane P1, toward the region outside the entrance pupil of the condenser optical system 26, it is feasible to prevent the zero-order reflected light from affecting the pupil luminance distribution and, typically, to prevent the zero-order reflected light from forming a light spot at a position near the optical axis AX2.
The second embodiment of the present invention will be described next according to
As shown in
In the second prism member 52, a plane perpendicular to the optical axis of the exposure light EL is formed on the reflecting optical system 23 side and a refracting surface 52a of a convex shape corresponding to the shape of the refracting surface 51a of the first prism member 51 is formed on the first prism member 51 side. This refracting surface 52a is composed of a center part of a planar shape perpendicular to the optical axis of the exposure light EL, and a peripheral pyramid part corresponding to side faces of a rectangular pyramid centered on the optical axis.
When the prism members 51, 52 are arranged with a space of a predetermined distance h between them in the optical path of exposure light EL, the exposure light EL incident from the exposure light source 12 into the truncated pyramid axicon pair 50 is split into a plurality of beams. The predetermined distance h is so adjusted that the effective regions 25 of the movable multi-mirrors 22 are located in traveling directions of the respective beams. For this reason, the beams split by the truncated pyramid axicon pair 50 are reflected toward the condenser optical system 26 on the respective effective regions 25 of the movable multi-mirrors 22 arranged in the array form.
Therefore, the present embodiment achieves the effects described below, in addition to the effects (1) and (2) in the first embodiment.
(3) The effective regions of the movable multi-mirrors 22 are located in the traveling directions of the respective beams split by the truncated pyramid axicon pair 50. For this reason, the exposure light EL is scarcely incident to the positions other than the locations of the movable multi-mirrors 22 in the reflecting optical system 23 and to the portions other than the effective regions 25 of the movable multi-mirrors 22. Therefore, a loss in light quantity can be reduced in the reflecting optical system 23. Furthermore, it is feasible to restrain promotion of deterioration of the movable multi-mirrors 22 due to increase in temperature based on illumination with the exposure light EL in the positions other than the locations of the movable multi-mirrors 22 in the reflecting optical system 23 and the portions other than the effective regions 25 of the movable multi-mirrors 22.
(4) Since no member with power (inverse of the focal length) is arranged in the optical path between the truncated pyramid axicon pair 50, which can be regarded as a beam splitter, and the movable multi-mirrors 22a, 22b, 22c, the beams that can be regarded as parallel beams are incident to the mirror elements of the movable multi-mirrors, which can enhance controllability of the pupil luminance distribution on the plane P2. On the other hand, when the beams incident to the mirror elements have an angle distribution, a light spot formed on the plane P2 by the light from the mirror elements through the condenser optical system 26 will become spread, which will make control of the pupil luminance distribution difficult.
In the present embodiment, the above-described structure can be regarded as a configuration wherein the entrance-side optical axis AX1 being an axis of the optical path of the light emitted from the light source 12 is interposed between the first position where the movable multi-mirror 22a is arranged and the second position where another movable multi-mirror 22c is arranged among the plurality of movable multi-mirrors 22. Furthermore, it can also be regarded as a configuration wherein the truncated pyramid axicon pair 50 (beam splitter) splits the beam in a plane including the optical axis AX1 (i.e., in the XY plane in the drawing).
The third embodiment of the present invention will be described below according to
As shown in
The diffractive optical element 55 has a plurality of wavefront division regions in the plane of the diffractive optical element 55, in order to form an approximately even illumination region in each of the plurality of regions separated by a predetermined distance. Wavefront division regions belonging to a first set among the plurality of wavefront division regions direct the exposure light EL incident thereto, toward a first illumination region out of the plurality of illumination regions.
This causes the first illumination region to be superposedly illuminated by a plurality of beams having passed via the wavefront division regions belonging to the first set, and to have an even illuminance distribution. Similarly, wavefront division regions belonging to a second set different from the first set among the plurality of wavefront division regions direct the exposure light EL incident thereto, toward a second illumination region different from the first illumination region out of the plurality of illumination regions. This causes the second illumination region to be superposedly illuminated by a plurality of beams having passed via the wavefront division regions belonging to the second set, and to have an even illuminance distribution.
For example, the diffractive optical element 55 of the present embodiment can be the one disclosed in U.S. Pat. No. 5,850,300. U.S. Pat. No. 5,850,300 is incorporated herein by reference.
Therefore, the present embodiment achieves the effect described below, in addition to the effects (1) to (4) in the second embodiment.
(5) Since the diffractive optical element 55 makes the light intensity distribution even, the plurality of movable multi-mirrors 22 are illuminated with light of the even intensity distribution even when the intensity distribution is uneven in the cross section of the light EL emitted from the light source 12. For this reason, it is feasible to enhance the controllability of the pupil luminance distribution formed on the plane P2. On the other hand, when the movable multi-mirrors 22 are illuminated with light of an uneven intensity distribution, this unevenness of the intensity distribution will affect the pupil luminance distribution and each mirror element of the movable multi-mirrors 22 can be controlled in consideration of this unevenness. Therefore, the control becomes complicated.
The fourth embodiment of the present invention will be described below according to
As shown in
In the reflecting optical system 23 of the present embodiment, the movable multi-mirrors 22 are arranged so as to positionally correspond to the respective lens elements 61 of the fly's eye lens 60. For example, in a case where the fly's eye lens 60 is one in which four lens elements are arrayed in the X-direction, the reflecting optical system 23 is so configured that four movable multi-mirrors 22 are arrayed along the X-direction. This configuration achieves the same operational effects as in each of the aforementioned second and third embodiments.
The exposure light EL incident to each movable multi-mirror 22 is mostly reflected toward the condenser optical system 26, but part of the rest (which will be referred to hereinafter as “return light”) can be reflected toward the fly's eye lens 60. This return light is restrained from entering the fly's eye lens 60, by the relay optical system 18A arranged between the reflecting optical system 23 and the fly's eye lens 60. For this reason, the large number of light source images formed on the image plane of the fly's eye lens 60 can be prevented from being disturbed by the return light. As described above, the relay optical system can be regarded as a restraining member which restrains the return light from each movable multi-mirror 22 from entering the beam splitter.
The fifth embodiment of the present invention will be described below according to
As shown in
When the intensity of the exposure light EL for forming the pattern image on the wafer W becomes lowered or when the pupil luminance distribution on the wafer W becomes disturbed, based on a secular change in characteristics of the movable multi-mirrors 22 to which the exposure light EL is incident (e.g., based on deterioration of the reflecting film or deterioration of the drive unit 35 for the mirror element 33), the moving mechanism 65 is actuated to guide the exposure light EL onto the movable multi-mirrors 22 to which the exposure light EL has not been guided heretofore.
For example, in a case where the output of the exposure amount sensor SE 1 monitored becomes lowered, or in a case where a deviation of the pupil luminance distribution measured by the pupil luminance distribution detector SE2, from a target value becomes off a permissible range, the control unit 66 sends a control signal to instruct replacement of the movable multi-mirrors 22, to the moving mechanism 65.
As described above, the exposure apparatus 11 of the present embodiment allows the movable multi-mirrors 22 to which the exposure light EL emitted from the exposure light source 12 is incident, to be replaced with others, without temporary suspension of drive of the exposure apparatus 11. Therefore, a contribution can be made to increase in manufacture efficiency of semiconductor devices with increase in output of the exposure light source 12, even in the case where the movable multi-mirrors 22 are arranged in the optical path of the exposure light EL emitted from the exposure light source 12.
Each of the above embodiments may be modified into another embodiment as described below.
In each embodiment, the reflecting optical system 23 may be one composed of three or more types of movable multi-mirrors 22, 22A, 22B. For example, the reflecting optical system 23 may have a configuration having third movable multi-mirrors consisting of mirror elements 33 rotatable around a third axis (e.g., an axis extending in the X-direction) intersecting with the first axis S1 and the second axis S2, in addition to the first movable multi-mirrors 22A and the second movable multi-mirrors 22B.
In each embodiment, the first movable multi-mirrors 22A may be those having mirror elements 33 rotatable around an axis parallel to the first axis S1. Similarly, the second movable multi-mirrors 22B may be those having mirror elements 33 rotatable around an axis parallel to the second axis S2.
In each embodiment, the first axis S1 does not have to be one extending along a diagonal line of each mirror element 33, but may be, for example, an axis extending along the X-direction. In this case, the second axis S2 may be an axis extending along the Y-direction.
In each embodiment, the reflecting optical system 23 may be one consisting of one type of movable multi-mirrors 22 (e.g., the first movable multi-mirrors 22A).
In the fifth embodiment, the movable multi-mirrors 22 to which the exposure light EL is incident may be switched at intervals of a predetermined time.
In the fifth embodiment, the number of movable multi-mirrors 22 to which the exposure light EL is incident, may be an arbitrary number except for two (e.g., one or three).
In the fifth embodiment, where the movable multi-mirrors 22 to which the exposure light EL is incident are switched, the apparatus may be so configured as to switch at least only one of them to which the exposure light EL is incident.
In each embodiment, the movable multi-mirrors 22 may be those having mirror elements 33 rotatable around mutually orthogonal axes (those having two degrees of freedom for inclination). The spatial light modulation members of this type can be selected, for example, from those disclosed in Japanese Patent Application Laid-open (Translation of PCT Application) No. 10-503300 and European Patent Application Publication EP 779530 corresponding thereto, Japanese Patent Application Laid-open No. 2004-78136 and U.S. Pat. No. 6,900,915 corresponding thereto, Japanese Patent Application Laid-open (Translation of PCT Application) No. 2006-524349 and U.S. Pat. No. 7,095,546 corresponding thereto, and Japanese Patent Application Laid-open No. 2006-113437. European Patent Application Publication EP 779530, U.S. Pat. No. 6,900,915, and U.S. Pat. No. 7,095,546 are incorporated herein by reference. In each embodiment, the movable multi-mirrors 22 were those in which the orientations (inclinations) of the mirror elements arranged two-dimensionally could be individually controlled, but it is also possible, for example, to use spatial light modulation members in which heights (positions) of reflecting surfaces arranged two-dimensionally can be individually controlled. Such spatial light modulation members can be, for example, those disclosed in Japanese Patent Application Laid-open No. 6-281869 and U.S. Pat. No. 5,312,513 corresponding thereto, and in
In each embodiment, the movable multi-mirrors 22 may be modified, for example, according to the disclosure in Japanese Patent Application Laid-open (Translation of PCT Application) No. 2006-513442 and U.S. Pat. No. 6,891,655 corresponding thereto or according to the disclosure in Japanese Patent Application Laid-open (Translation of PCT Application) No. 2005-524112 and U.S. Pat. Published Application No. 2005/0095749 corresponding thereto. U.S. Pat. No. 6,891,655 and U.S. Pat. Published Application No. 2005/0095749 are incorporated herein by reference.
In each embodiment, the exposure apparatus 11 may be an exposure apparatus which transfers a circuit pattern from a mother reticle onto a glass substrate, a silicon wafer, or the like, in order to manufacture a reticle or a mask to be used in photo exposure apparatus, EUV exposure apparatus, X-ray exposure apparatus, electron beam exposure apparatus, and so on, as well as the micro devices such as the semiconductor devices. The exposure apparatus 11 may also be an exposure apparatus used in manufacture of displays including liquid-crystal display devices (LCDs) and others, to transfer a device pattern onto a glass plate, an exposure apparatus used in manufacture of thin-film magnetic heads or the like to transfer a device pattern onto a ceramic wafer or the like, or an exposure apparatus used in manufacture of imaging devices such as CCDs.
The illumination optical apparatus 13 in each of the embodiments can be mounted on a scanning stepper configured to transfer a pattern of an illumination target object onto a substrate in a state in which the illumination target object and the substrate are relatively moved, and to successively move the substrate stepwise, and can also be mounted on a stepper of the step-and-repeat method configured to transfer a pattern of an illumination target object onto a substrate in a state in which the illumination target object and the substrate are stationary, and to successively move the substrate stepwise.
In each embodiment, the exposure light source 12 may be, for example, an exposure light source capable of supplying the g-line (436 nm), the i-line (365 nm), the KrF excimer laser (248 nm), the F2 laser (157 nm), the Kr2 laser (146 nm), the Ar2 laser (126 nm), or the like. The exposure light source 12 may also be an exposure light source capable of supplying a harmonic obtained by amplifying a single-wavelength laser beam in the infrared region or in the visible region lased from a DFB semiconductor laser or a fiber laser, for example, by a fiber amplifier doped with erbium (or with both of erbium and ytterbium), and converting the wavelength into ultraviolet light with a nonlinear optical crystal.
In each embodiment, it is also possible to apply the so-called polarized illumination method disclosed in U.S. Pat. Published Application Nos. 2006/0203214, 2006/0170901, and 2007/0146676. Teachings of the U.S. Pat. Published Application Nos. 2006/0203214, 2006/0170901, and 2007/0146676 are incorporated herein by reference. The below will describe an embodiment of a manufacture method of micro devices using the device manufacturing method with the exposure apparatus 11 of the embodiments of the present invention in the lithography process.
The first block S101 (design block) is to design the function and performance of micro devices (e.g., design the circuitry for semiconductor devices or the like) and to design a pattern for realizing the function. The subsequent block S102 (mask production block) is to produce a mask (reticle R or the like) on which the designed circuit pattern is formed. On the other hand, block S103 (substrate production block) is to produce a substrate of a material such as silicon, glass, or ceramics (which becomes a wafer W where a silicon material is used).
The next block S104 (substrate processing block) is to form an actual circuit and others on the substrate by the lithography technology and others, as described below, using the mask and the substrate prepared in the blocks S101-S103. The next block S105 (device assembly block) is to assemble devices using the substrate processed in block S104. This block S105 includes such blocks as a dicing block, a bonding block, and a packaging block (chip encapsulation) as occasion may demand. The final block 8106 (inspection block) is to perform such inspections as an operation check test and a durability test of the micro devices fabricated in block S105. After completion of these blocks, the micro devices are completed and shipped.
Block S111 (oxidation block) is to oxidize the surface of the substrate. Block S112 (CVD block) is to form an insulating film on the surface of the substrate. Block S113 (electrode forming block) is to form electrodes on the substrate by evaporation. Block S114 (ion implantation block) is to implant ions into the substrate. Each of the above blocks S111-S114 constitutes a preprocessing block in each stage of substrate processing and is executed as selected according to a process necessary in each stage.
After completion of the above-described preprocessing blocks in the stages of the substrate processing, post-processing blocks are executed as described below. In the post-processing blocks, the first block S115 (resist forming block) is to apply a photosensitive material onto the substrate. The subsequent block S116 (exposure block) is to transfer the circuit pattern of the mask onto the wafer by the above-described lithography system (exposure apparatus 11). The next block S117 (development block) is to develop the substrate exposed in block S116, to form a mask layer consisting of the circuit pattern on the surface of the substrate. In block S118 (etching block) subsequent thereto, the exposed member is removed by etching from the portions other than the resist-remaining portions. The following block S119 (resist removal block) is to remove the photosensitive material unnecessary after the etching. Namely, the blocks S118 and S119 are to process the surface of the substrate through the mask layer. By repeatedly carrying out these preprocessing blocks and post-processing blocks, circuit patterns are multiply formed on the substrate.
Namely, as mentioned above, according to embodiments of the present invention, the light emitted from the light source is guided to the illumination target object by the plurality of spatial light modulation members arranged in the array form. For this reason, the timing of replacement of the spatial light modulation member with temporary suspension of drive of the exposure apparatus can be delayed by increase in the number of spatial light modulation members used, when compared with the conventional case where the light emitted from the light source is guided to the illumination target object with the use of one spatial light modulation member. Therefore, a contribution can be made to increase in manufacture efficiency of devices with increase in output of the light source, even in the case where the spatial light modulation member is arranged in the optical path of the light emitted from the light source.
Embodiments of the present invention successfully achieve the contribution to increase in manufacture efficiency of devices with increase in output of the light source.
In the above-described embodiments, the light source 12 can be, for example, an ArF excimer laser light source which supplies pulsed laser light at the wavelength of 193 nm, or a KrF excimer laser light source which supplies pulsed laser light at the wavelength of 248 nm. Without having to be limited to these, it is also possible, for example, to use another appropriate light source such as an F2 laser light source or an ultrahigh pressure mercury lamp. The exposure apparatus of the above-described embodiments can be used as scanning exposure apparatus performing exposure while moving the reticle (mask) and the wafer (photosensitive substrate) relative to the projection optical system, or as exposure apparatus of the one-shot exposure type performing projection exposure in a state in which the reticle (mask) and the wafer (photosensitive substrate) are stationary relative to the projection optical system.
In the foregoing embodiment, it is also possible to apply a technique of filling the interior of the optical path between the projection optical system and the photosensitive substrate with a medium having the refractive index larger than 1.1 (typically, a liquid), which is so called a liquid immersion method. In this case, it is possible to adopt one of the following techniques as a technique of filling the interior of the optical path between the projection optical system and the photosensitive substrate with the liquid: the technique of locally filling the optical path with the liquid as disclosed in International Publication WO99/49504; the technique of moving a stage holding the substrate to be exposed, in a liquid bath as disclosed in Japanese Patent Application Laid-open No. 6-124873; the technique of forming a liquid bath of a predetermined depth on a stage and holding the substrate therein as disclosed in Japanese Patent Application Laid-open No. 10-303114, and so on. The teachings in WO99/49504, Japanese Patent Application Laid-open No. 6-124873, and Japanese Patent Application Laid-open No. 10-303114 are incorporated herein by reference.
The invention is not limited to the fore going embodiments but various changes and modifications of its components may be made without departing from the scope of the present invention. Also, the components disclosed in the embodiments may be assembled in any combination for embodying the present invention. For example, some of the components may be omitted from all components disclosed in the embodiments. Further, components in different embodiments may be appropriately combined.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2007-266691 | Oct 2007 | JP | national |
This application is based upon and claims the benefit of priorities from Japanese Patent Application No. 2007-266691, filed on Oct. 12, 2007 and U.S. Provisional Application No. 60/996,035, filed on Oct. 25, 2007, the entire contents of which are incorporated herein by reference.
| Number | Date | Country | |
|---|---|---|---|
| 60996035 | Oct 2007 | US |
