Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power to rotate linear polarization direction

Information

  • Patent Grant
  • 10281632
  • Patent Number
    10,281,632
  • Date Filed
    Monday, August 8, 2011
    13 years ago
  • Date Issued
    Tuesday, May 7, 2019
    5 years ago
Abstract
An illumination optical apparatus illuminates a pattern on a mask with illumination light. The illumination optical apparatus includes an optical integrator arranged in an optical path of the illumination light, and a polarization member made of optical material with optical rotatory power, which is arranged in the optical path on an incidence side of the optical integrator, and which changes a polarization state of the illumination light. The illumination light from the polarization member is irradiated onto the pattern through a pupil plane of the illumination optical apparatus.
Description
BACKGROUND OF THE INVENTION

Field of the Invention


The present invention relates to a beam transforming element, illumination optical apparatus, exposure apparatus, and exposure method and, more particularly, to an illumination optical apparatus suitably applicable to exposure apparatus used in production of microdevices such as semiconductor elements, image pickup elements, liquid crystal display elements, and thin-film magnetic heads by lithography.


Related Background Art


In the typical exposure apparatus of this type, a beam emitted from a light source travels through a fly's eye lens as an optical integrator to form a secondary light source as a substantial surface illuminant consisting of a number of light sources. Beams from the secondary light source (generally, an illumination pupil distribution formed on or near an illumination pupil of the illumination optical apparatus) are limited through an aperture stop disposed near the rear focal plane of the fly's eye lens and then enter a condenser lens.


The beams condensed by the condenser lens superposedly illuminate a mask on which a predetermined pattern is formed. The light passing through the pattern of the mask is focused on a wafer through a projection optical system. In this manner, the mask pattern is projected for exposure (or transcribed) onto the wafer. The pattern formed on the mask is a highly integrated pattern, and, in order to accurately transcribe this microscopic pattern onto the wafer, it is indispensable to obtain a uniform illuminance distribution on the wafer.


For example, Japanese Patent No. 3246615 owned by the same Applicant of the present application discloses the following technology for realizing the illumination condition suitable for faithful transcription of the microscopic pattern in arbitrary directions: the secondary light source is formed in an annular shape on the rear focal plane of the fly's eye lens and the beams passing the secondary light source of the annular shape are set to be in a linearly polarized state with a direction of polarization along the circumferential direction thereof (hereinafter referred to as a “azimuthal polarization state”).


SUMMARY OF THE INVENTION

An object of the present invention is to form an illumination pupil distribution of an annular shape in a azimuthal polarization state while well suppressing the loss of light quantity. Another object of the present invention is to transcribe a microscopic pattern in an arbitrary direction under an appropriate illumination condition faithfully and with high throughput, by forming an illumination pupil distribution of an annular shape in a azimuthal polarization state while well suppressing the loss of light quantity.


In order to achieve the above objects, a first aspect of the present embodiment is to provide a beam transforming element for forming a predetermined light intensity distribution on a predetermined surface on the basis of an incident beam, comprising:

    • a first basic element made of an optical material with optical activity, for forming a first region distribution of the predetermined light intensity distribution on the basis of the incident beam; and
    • a second basic element made of an optical material with optical activity, for forming a second region distribution of the predetermined light intensity distribution on the basis of the incident beam,
    • wherein the first basic element and the second basic element have their respective thicknesses different from each other along a direction of transmission of light.


A second aspect of the present embodiment is to provide a beam transforming element for, based on an incident beam, forming a predetermined light intensity distribution of a shape different from a sectional shape of the incident beam, on a predetermined surface, comprising:

    • a diffracting surface or a refracting surface for forming the predetermined light intensity distribution on the predetermined surface,
    • wherein the predetermined light intensity distribution is a distribution in at least a part of a predetermined annular region, which is a predetermined annular region centered around a predetermined point on the predetermined surface, and
    • wherein a beam from the beam transforming element passing through the predetermined annular region has a polarization state in which a principal component is linearly polarized light having a direction of polarization along a circumferential direction (azymuthally direction) of the predetermined annular region.


A third aspect of the present invention is to provide an illumination optical apparatus for illuminating a surface to be illuminated, based on a beam from a light source, comprising:

    • the beam transforming element of the first aspect or the second aspect for transforming the beam from the light source in order to form an illumination pupil distribution on or near an illumination pupil of the illumination optical apparatus.


A fourth aspect of the present embodiment is to provide an exposure apparatus comprising the illumination optical apparatus of the third aspect for illuminating a pattern,

    • the exposure apparatus being arranged to project the pattern onto a photosensitive substrate.


A fifth aspect of the present embodiment is to provide an exposure method comprising: an illumination step of illuminating a pattern by use of the illumination optical apparatus of the third aspect; and an exposure step of projecting the pattern onto a photosensitive substrate.


The illumination optical apparatus of the present embodiment, different from the conventional technology giving rise to the large loss of light quantity at the aperture stop, is able to form the illumination pupil distribution of the annular shape in the azimuthal polarization state, with no substantial loss of light quantity, by diffraction and optical rotating action of the diffractive optical element as the beam transforming element. Namely, the illumination optical apparatus of the present invention is able to form the illumination pupil distribution of the annular shape in the azimuthal polarization state while well suppressing the loss of light quantity.


Since the exposure apparatus and exposure method using the illumination optical apparatus of the present embodiment are arranged to use the illumination optical apparatus capable of forming the illumination pupil distribution of the annular shape in the azimuthal polarization state while well suppressing the loss of light quantity, they are able to transcribe a microscopic pattern in an arbitrary direction under an appropriate illumination condition faithfully and with high throughput and, in turn, to produce good devices with high throughput.


The present invention will be more fully understood from the detailed description given hereinbelow and the accompanying drawings, which are given by way of illustration only and are not to be considered as limiting the embodiment.


Further scope of applicability of the embodiment will become apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating preferred embodiments of the invention, are given by way of illustration only, since various changes and modifications within the spirit and scope of the invention will be apparent to those skilled in the art from this detailed description.





BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 is an illustration schematically showing a configuration of an exposure apparatus with an illumination optical apparatus according to an embodiment of the present invention.



FIG. 1(b) is an illustration schematically showing a configuration of an exposure apparatus with an illumination optical apparatus that includes a liquid LM in the optical path between the projection optical system and the photosensitive substrate according to an embodiment of the present invention.



FIG. 2 is an illustration showing a secondary light source of an annular shape formed in annular illumination.



FIG. 3 is an illustration schematically showing a configuration of a conical axicon system disposed in an optical path between a front lens unit and a rear lens unit of an afocal lens in FIG. 1.



FIG. 4 is an illustration to illustrate the action of the conical axicon system on the secondary light source of the annular shape.



FIG. 5 is an illustration to illustrate the action of a zoom lens on the secondary light source of the annular shape.



FIG. 6 is an illustration schematically showing a first cylindrical lens pair and a second cylindrical lens pair disposed in an optical path between the front lens unit and the rear lens unit of the afocal lens in FIG. 1.



FIG. 7 is a first drawing to illustrate the action of the first cylindrical lens pair and the second cylindrical lens pair on the secondary light source of the annular shape.



FIG. 8 is a second drawing to illustrate the action of the first cylindrical lens pair and the second cylindrical lens pair on the secondary light source of the annular shape.



FIG. 9 is a third drawing to illustrate the action of the first cylindrical lens pair and the second cylindrical lens pair on the secondary light source of the annular shape.



FIG. 10 is a perspective view schematically showing an internal configuration of a polarization monitor in FIG. 1.



FIG. 11 is an illustration schematically showing a configuration of a diffractive optical element for azimuthally polarized annular illumination according to an embodiment of the present invention.



FIG. 12 is an illustration schematically showing a secondary light source of an annular shape set in the azimuthal polarization state.



FIG. 13 is an illustration to illustrate the action of a first basic element.



FIG. 14 is an illustration to illustrate the action of a second basic element.



FIG. 15 is an illustration to illustrate the action of a third basic element.



FIG. 16 is an illustration to illustrate the action of a fourth basic element.



FIG. 17 is an illustration to illustrate the optical activity of crystalline quartz.



FIGS. 18A and 18B are illustrations showing octapole secondary light sources in the azimuthal polarization state consisting of eight arc regions spaced from each other along the circumferential direction and a quadrupole secondary light source in the azimuthal polarization state consisting of four arc regions spaced from each other along the circumferential direction.



FIG. 19 is an illustration showing a secondary light source of an annular shape in the azimuthal polarization state consisting of eight arc regions overlapping with each other along the circumferential direction.



FIGS. 20A and 20B are illustrations showing hexapole secondary light sources in the azimuthal polarization state consisting of six arc regions spaced from each other along the circumferential direction and a secondary light source in the azimuthal polarization state having a plurality of regions spaced from each other along the circumferential direction and a region on the optical axis.



FIG. 21 is an illustration showing an example in which an entrance-side surface of a diffractive optical element for azimuthally polarized annular illumination is planar.



FIG. 22 is a flowchart of a procedure of obtaining semiconductor devices as microdevices.



FIG. 23 is a flowchart of a procedure of obtaining a liquid crystal display element as a microdevice.





DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of the present invention will be described based on the accompanying drawings.



FIG. 1 is an illustration schematically showing a configuration of an exposure apparatus with an illumination optical apparatus according to an embodiment of the present invention. In FIG. 1, the Z-axis is defined along a direction of a normal to a wafer W being a photosensitive substrate, the Y-axis along a direction parallel to the plane of FIG. 1 in the plane of the wafer W, and the X-axis along a direction of a normal to the plane of FIG. 1 in the plane of wafer W. The exposure apparatus of the present embodiment is provided with a light source 1 for supplying exposure light (illumination light).


The light source 1 can be, for example, a KrF excimer laser light source for supplying light with the wavelength of 248 nm, an ArF excimer laser light source for supplying light with the wavelength of 193 nm, or the like. A nearly parallel beam emitted along the Z-direction from the light source 1 has a cross section of a rectangular shape elongated along the X-direction, and is incident to a beam expander 2 consisting of a pair of lenses 2a and 2b. The lenses 2a and 2b have a negative refracting power and a positive refracting power, respectively, in the plane of FIG. 1 (or in the YZ plane). Therefore, the beam incident to the beam expander 2 is enlarged in the plane of FIG. 1 and shaped into a beam having a cross section of a predetermined rectangular shape.


The nearly parallel beam passing through the beam expander 2 as a beam shaping optical system is deflected into the Y-direction by a bending mirror 3, and then travels through a quarter wave plate 4a, a half wave plate 4b, a depolarizer (depolarizing element) 4c, and a diffractive optical element 5 for annular illumination to enter an afocal lens 6. Here the quarter wave plate 4a, half wave plate 4b, and depolarizer 4c constitute a polarization state converter 4, as described later. The afocal lens 6 is an afocal system (afocal optic) set so that the front focal position thereof approximately coincides with the position of the diffractive optical element 5 and so that the rear focal position thereof approximately coincides with the position of a predetermined plane 7 indicated by a dashed line in the drawing.


In general, a diffractive optical element is constructed by forming level differences with the pitch of approximately the wavelength of exposure light (illumination light) in a substrate and has the action of diffracting an incident beam at desired angles. Specifically, the diffractive optical element 5 for annular illumination has the following function: when a parallel beam having a rectangular cross section is incident thereto, it forms a light intensity distribution of an annular shape in its far field (or Fraunhofer diffraction region). Therefore, the nearly parallel beam incident to the diffractive optical element 5 as a beam transforming element forms a light intensity distribution of an annular shape on the pupil plane of the afocal lens 6 and then emerges as a nearly parallel beam from the afocal lens 6.


In an optical path between front lens unit 6a and rear lens unit 6b of the afocal lens 6 there are a conical axicon system 8, a first cylindrical lens pair 9, and a second cylindrical lens pair 10 arranged in order from the light source side on or near the pupil plane of the afocal lens, and the detailed configuration and action thereof will be described later. For easier description, the fundamental configuration and action will be described below, in disregard of the action of the conical axicon system 8, first cylindrical lens pair 9, and second cylindrical lens pair 10.


The beam through the afocal lens 6 travels through a zoom lens 11 for variation of σ-value and then enters a micro fly's eye lens (or fly's eye lens) 12 as an optical integrator. The micro fly's eye lens 12 is an optical element consisting of a number of micro lenses with a positive refracting power arranged lengthwise and breadthwise and densely. In general, a micro fly's eye lens is constructed, for example, by forming a micro lens group by etching of a plane-parallel plate.


Here each micro lens forming the micro fly's eye lens is much smaller than each lens element forming a fly's eye lens. The micro fly's eye lens is different from the fly's eye lens consisting of lens elements spaced from each other, in that a number of micro lenses (micro refracting surfaces) are integrally formed without being separated from each other. In the sense that lens elements with a positive refracting power are arranged lengthwise and breadthwise, however, the micro fly's eye lens is a wavefront splitting optical integrator of the same type as the fly's eye lens. Detailed explanation concerning the micro fly's eye lens capable of being used in the present invention is disclosed, for example, in U.S. Pat. No. 6,913,373(B2) which is incorporated herein by reference in its entirety.


The position of the predetermined plane 7 is arranged near the front focal position of the zoom lens 11, and the entrance surface of the micro fly's eye lens 12 is arranged near the rear focal position of the zoom lens 11. In other words, the zoom lens 11 arranges the predetermined plane 7 and the entrance surface of the micro fly's eye lens 12 substantially in the relation of Fourier transform and eventually arranges the pupil plane of the afocal lens 6 and the entrance surface of the micro fly's eye lens 12 approximately optically conjugate with each other.


Accordingly, for example, an illumination field of an annular shape centered around the optical axis AX is formed on the entrance surface of the micro fly's eye lens 12, as on the pupil plane of the afocal lens 6. The entire shape of this annular illumination field similarly varies depending upon the focal length of the zoom lens 11. Each micro lens forming the micro fly's eye lens 12 has a rectangular cross section similar to a shape of an illumination field to be formed on a mask M (eventually, a shape of an exposure region to be formed on a wafer W).


The beam incident to the micro fly's eye lens 12 is two-dimensionally split by a number of micro lenses to form on its rear focal plane (eventually on the illumination pupil) a secondary light source having much the same light intensity distribution as the illumination field formed by the incident beam, i.e., a secondary light source consisting of a substantial surface illuminant of an annular shape centered around the optical axis AX, as shown in FIG. 2. Beams from the secondary light source formed on the rear focal plane of the micro fly's eye lens 12 (in general, an illumination pupil distribution formed on or near the pupil plane 12aa of the illumination optical apparatus) travel through beam splitter 13a and condenser optical system 14 to superposedly illuminate a mask blind 15.


In this manner, an illumination field of a rectangular shape according to the shape and focal length of each micro lens forming the micro fly's eye lens 12 is formed on the mask blind 15 as an illumination field stop. The internal configuration and action of polarization monitor 13 incorporating a beam splitter 13a will be described later. Beam through a rectangular aperture (light transmitting portion) of the mask blind 15 are subject to light condensing action of imaging optical system 16 and thereafter superposedly illuminate the mask M on which a predetermined pattern is formed.


Namely, the imaging optical system 16 forms an image of the rectangular aperture of the mask blind 15 on the mask M. A beam passing through the pattern of mask M travels through a projection optical system PL to form an image of the mask pattern on the wafer W being a photosensitive substrate. In this manner, the pattern of the mask M is sequentially printed in each exposure area on the wafer W through full-wafer exposure or scan exposure with two-dimensional drive control of the wafer W in the plane (XY plane) perpendicular to the optical axis AX of the projection optical system PL.


In the polarization state converter 4, the quarter wave plate 4a is arranged so that its crystallographic axis is rotatable around the optical axis AX, and it transforms incident light of elliptical polarization into light of linear polarization. The half wave plate 4b is arranged so that its crystallographic axis is rotatable around the optical axis AX, and it changes the plane of polarization of linearly polarized light incident thereto. The depolarizer 4c is composed of a wedge-shaped crystalline quartz prism (not shown) and a wedge-shaped fused sillica prism (not shown) having complementary shapes. The crystalline quartz prism and the fussed sillica prism are constructed as an integral prism assembly so as to be set into and away from the illumination optical path.


Where the light source 1 is the KrF excimer laser light source or the ArF excimer laser light source, light emitted from these light sources typically has the degree of polarization of 95% or more and light of almost linear polarization is incident to the quarter wave plate 4a. However, if a right-angle prism as a back-surface reflector is interposed in the optical path between the light source 1 and the polarization state converter 4, the linearly polarized light will be changed into elliptically polarized light by virtue of total reflection in the right-angle prism unless the plane of polarization of the incident, linearly polarized light agrees with the P-polarization plane or S-polarization plane.


In the case of the polarization state converter 4, for example, even if light of elliptical polarization is incident thereto because of the total reflection in the right-angle prism, light of linear polarization transformed by the action of the quarter wave plate 4a will be incident to the half wave plate 4b. Where the crystallographic axis of the half wave plate 4b is set at an angle of 0° or 90° relative to the plane of polarization of the incident, linearly polarized light, the light of linear polarization incident to the half wave plate 4b will pass as it is, without change in the plane of polarization.


Where the crystallographic axis of the half wave plate 4b is set at an angle of 45° relative to the plane of polarization of the incident, linearly polarized light, the light of linear polarization incident to the half wave plate 4b will be transformed into light of linear polarization with change of polarization plane of 90°. Furthermore, where the crystallographic axis of the crystalline quartz prism in the depolarizer 4c is set at an angle of 45° relative to the polarization plane of the incident, linearly polarized light, the light of linear polarization incident to the crystalline quartz prism will be transformed (or depolarized) into light in an unpolarized state.


The polarization state converter 4 is arranged as follows: when the depolarizer 4c is positioned in the illumination optical path, the crystallographic axis of the crystalline quartz prism makes the angle of 45° relative to the polarization plane of the incident, linearly polarized light. Incidentally, where the crystallographic axis of the crystalline quartz prism is set at the angle of 0° or 90° relative to the polarization plane of the incident, linearly polarized light, the light of linear polarization incident to the crystalline quartz prism will pass as it is, without change of the polarization plane. Where the crystallographic axis of the half wave plate 4b is set at an angle of 22.5° relative to the polarization plane of incident, linearly polarized light, the light of linear polarization incident to the half wave plate 4b will be transformed into light in an unpolarized state including a linear polarization component directly passing without change of the polarization plane and a linear polarization component with the polarization plane rotated by 90°.


The polarization state converter 4 is arranged so that light of linear polarization is incident to the half wave plate 4b, as described above, and, for easier description hereinafter, it is assumed that light of linear polarization having the direction of polarization (direction of the electric field) along the Z-axis in FIG. 1 (hereinafter referred to as “Z-directionally polarized light”) is incident to the half wave plate 4b. When the depolarizer 4c is positioned in the illumination optical path and when the crystallographic axis of the half wave plate 4b is set at the angle of 0° or 90° relative to the polarization plane (direction of polarization) of the Z-directionally polarized light incident thereto, the light of Z-directional polarization incident to the half wave plate 4b passes as kept as Z-directionally polarized light without change of the polarization plane and enters the crystalline quartz prism in the depolarizer 4c. Since the crystallographic axis of the crystalline quartz prism is set at the angle of 45° relative to the polarization plane of the Z-directionally polarized light incident thereto, the light of Z-directional polarization incident to the crystalline quartz prism is transformed into light in an unpolarized state.


The light depolarized through the crystalline quartz prism travels through the quartz prism as a compensator for compensating the traveling direction of the light and is incident into the diffractive optical element 5 while being in the depolarized state. On the other hand, if the crystallographic axis of the half wave plate 4b is set at the angle of 45° relative to the polarization plane of the Z-directionally polarized light incident thereto, the light of Z-directional polarization incident to the half wave plate 4b will be rotated in the polarization plane by 90° and transformed into light of linear polarization having the polarization direction (direction of the electric field) along the X-direction in FIG. 1 (hereinafter referred to as “X-directionally polarized light”) and the X-directionally polarized light will be incident to the crystalline quartz prism in the depolarizer 4c. Since the crystallographic axis of the crystalline quartz prism is set at the angle of 45° relative to the polarization plane of the incident, X-directionally polarized light as well, the light of X-directional polarization incident to the crystalline quartz prism is transformed into light in the depolarized state, and the light travels through the quartz prism to be incident in the depolarized state into the diffractive optical element 5.


In contrast, when the depolarizer 4c is set away from the illumination optical path, if the crystallographic axis of the half wave plate 4b is set at the angle of 0° or 90° relative to the polarization plane of the Z-directionally polarized light incident thereto, the light of Z-directional polarization incident to the half wave plate 4b will pass as kept as Z-directionally polarized light without change of the polarization plane, and will be incident in the Z-directionally polarized state into the diffractive optical element 5. If the crystallographic axis of the half wave plate 4b is set at the angle of 45° relative to the polarization plane of the Z-directionally polarized light incident thereto on the other hand, the light of Z-directional polarization incident to the half wave plate 4b will be transformed into light of X-directional polarization with the polarization plane rotated by 90°, and will be incident in the X-directionally polarized state into the diffractive optical element 5.


In the polarization state converter 4, as described above, the light in the depolarized state can be made incident to the diffractive optical element 5 when the depolarizer 4c is set and positioned in the illumination optical path. When the depolarizer 4c is set away from the illumination optical path and when the crystallographic axis of the half wave plate 4b is set at the angle of 0° or 90° relative to the polarization plane of the Z-directionally polarized light incident thereto, the light in the Z-directionally polarized state can be made incident to the diffractive optical element 5. Furthermore, when the depolarizer 4c is set away from the illumination optical path and when the crystallographic axis of the half wave plate 4b is set at the angle of 45° relative to the polarization plane of the Z-directionally polarized light incident thereto, the light in the X-directionally polarized state can be made incident to the diffractive optical element 5.


In other words, the polarization state converter 4 is able to switch the polarization state of the incident light into the diffractive optical element 5 (a state of polarization of light to illuminate the mask M and wafer W in use of an ordinary diffractive optical element except for the diffractive optical element for azimuthally polarized annular illumination according to the present invention as will be described later) between the linearly polarized state and the unpolarized state through the action of the polarization state converter consisting of the quarter wave plate 4a, half wave plate 4b, and depolarizer 4c, and, in the case of the linearly polarized state, it is able to switch between mutually orthogonal polarization states (between the Z-directional polarization and the X-directional polarization).



FIG. 3 is an illustration schematically showing the configuration of the conical axicon system disposed in the optical path between the front lens unit and the rear lens unit of the afocal lens in FIG. 1. The conical axicon system 8 is composed of a first prism member 8a whose plane is kept toward the light source and whose refracting surface of a concave conical shape is kept toward the mask, and a second prism member 8b whose plane is kept toward the mask and whose refracting surface of a convex conical shape is kept toward the light source, in order from the light source side.


The refracting surface of the concave conical shape of the first prism member 8a and the refracting surface of the convex conical shape of the second prism member 8b are formed in a complementary manner so as to be able to be brought into contact with each other. At least one of the first prism member 8a and the second prism member 8b is arranged movable along the optical axis AX, so that the spacing can be varied between the refracting surface of the concave conical shape of the first prism member 8a and the refracting surface of the convex conical shape of the second prism member 8b.


In a state in which the refracting surface of the concave conical shape of the first prism member 8a and the refracting surface of the convex conical shape of the second prism member 8b are in contact with each other, the conical axicon system 8 functions as a plane-parallel plate and has no effect on the secondary light source of the annular shape formed. However, when the refracting surface of the concave conical shape of the first prism member 8a and the refracting surface of the convex conical shape of the second prism member 8b are spaced from each other, the conical axicon system 8 functions a so-called beam expander. Therefore, the angle of the incident beam to the predetermined plane 7 varies according to change in the spacing of the conical axicon system 8.



FIG. 4 is an illustration to illustrate the action of the conical axicon system on the secondary light source of the annular shape. With reference to FIG. 4, the secondary light source 30a of the minimum annular shape formed in a state where the spacing of the conical axicon system 8 is zero and where the focal length of the zoom lens 11 is set at the minimum (this state will be referred to hereinafter as a “standard state”) is changed into secondary light source 30b of an annular shape with the outside diameter and inside diameter both enlarged and without change in the width (half of the difference between the inside diameter and the outside diameter: indicated by arrows in the drawing) when the spacing of the conical axicon system 8 is increased from zero to a predetermined value. In other words, an annular ratio (inside diameter/outside diameter) and size (outside diameter) both vary through the action of the conical axicon system 8, without change in the width of the secondary light source of the annular shape.



FIG. 5 is an illustration to illustrate the action of the zoom lens on the secondary light source of the annular shape. With reference to FIG. 5, the secondary light source 30a of the annular shape formed in the standard state is changed into secondary light source 30c of an annular shape whose entire shape is similarly enlarged by increasing the focal length of the zoom lens 11 from the minimum to a predetermined value. In other words, the width and size (outside diameter) both vary through the action of zoom lens 11, without change in the annular ratio of the secondary light source of the annular shape.



FIG. 6 is an illustration schematically showing the configuration of the first cylindrical lens pair and the second cylindrical lens pair disposed in the optical path between the front lens unit and the rear lens unit of the afocal lens in FIG. 1. In FIG. 6, the first cylindrical lens pair 9 and the second cylindrical lens pair 10 are arranged in order from the light source side. The first cylindrical lens pair 9 is composed, for example, of a first cylindrical negative lens 9a with a negative refracting power in the YZ plane and with no refracting power in the XY plane, and a first cylindrical positive lens 9b with a positive refracting power in the YZ plane and with no refracting power in the XY plane, which are arranged in order from the light source side.


On the other hand, the second cylindrical lens pair 10 is composed, for example, of a second cylindrical negative lens 10a with a negative refracting power in the XY plane and with no refracting power in the YZ plane, and a second cylindrical positive lens 10b with a positive refracting power in the XY plane and with no refracting power in the YZ plane, which are arranged in order from the light source side. The first cylindrical negative lens 9a and the first cylindrical positive lens 9b are arranged so as to integrally rotate around the optical axis AX. Similarly, the second cylindrical negative lens 10a and the second cylindrical positive lens 10b are arranged so as to integrally rotate around the optical axis AX.


In the state shown in FIG. 6, the first cylindrical lens pair 9 functions as a beam expander having a power in the Z-direction, and the second cylindrical lens pair 10 as a beam expander having a power in the X-direction. The power of the first cylindrical lens pair 9 and the power of the second cylindrical lens pair 10 are set to be equal to each other.



FIGS. 7 to 9 are illustrations to illustrate the action of the first cylindrical lens pair and the second cylindrical lens pair on the secondary light source of the annular shape. FIG. 7 shows such a setting that the direction of the power of the first cylindrical lens pair 9 makes the angle of +45° around the optical axis AX relative to the Z-axis and that the direction of the power of the second cylindrical lens pair 10 makes the angle of −45° around the optical axis AX relative to the Z-axis.


Therefore, the direction of the power of the first cylindrical lens pair 9 is perpendicular to the direction of the power of the second cylindrical lens pair 10, and the composite system of the first cylindrical lens pair 9 and the second cylindrical lens pair 10 has the Z-directional power and the X-directional power identical to each other. As a result, in a perfect circle state shown in FIG. 7, a beam passing through the composite system of the first cylindrical lens pair 9 and the second cylindrical lens pair 10 is subject to enlargement at the same power in the Z-direction and in the X-direction to form the secondary light source of a perfect-circle annular shape on the illumination pupil.


In contrast to it, FIG. 8 shows such a setting that the direction of the power of the first cylindrical lens pair 9 makes, for example, the angle of +80° around the optical axis AX relative to the Z-axis and that the direction of the power of the second cylindrical lens pair 10 makes, for example, the angle of −80° around the optical axis AX relative to the Z-axis. Therefore, the power in the X-direction is greater than the power in the Z-direction in the composite system of the first cylindrical lens pair 9 and the second cylindrical lens pair 10. As a result, in a horizontally elliptic state shown in FIG. 8, the beam passing through the composite system of the first cylindrical lens pair 9 and the second cylindrical lens pair 10 is subject to enlargement at the power greater in the X-direction than in the Z-direction, whereby the secondary light source of a horizontally long annular shape elongated in the X-direction is formed on the illumination pupil.


On the other hand, FIG. 9 shows such a setting that the direction of the power of the first cylindrical lens pair 9 makes, for example, the angle of +10° around the optical axis AX relative to the Z-axis and that the direction of the power of the second cylindrical lens pair 10 makes, for example, the angle of −10° around the optical axis AX relative to the Z-axis. Therefore, the power in the Z-direction is greater than the power in the X-direction in the composite system of the first cylindrical lens pair 9 and the second cylindrical lens pair 10. As a result, in a vertically elliptical state shown in FIG. 9, the beam passing through the composite system of the first cylindrical lens pair 9 and the second cylindrical lens pair 10 is subject to enlargement at the power greater in the Z-direction than in the X-direction, whereby the secondary light source of a vertically long annular shape elongated in the Z-direction is formed on the illumination pupil.


Furthermore, by setting the first cylindrical lens pair 9 and the second cylindrical lens pair 10 in an arbitrary state between the perfect circle state shown in FIG. 7 and the horizontally elliptical state shown in FIG. 8, the secondary light source can be formed in a horizontally long annular shape according to any one of various aspect ratios. By setting the first cylindrical lens pair 9 and the second cylindrical lens pair 10 in an arbitrary state between the perfect circle state shown in FIG. 7 and the vertically elliptical state shown in FIG. 9, the secondary light source can be formed in a vertically long annular shape according to any one of various aspect ratios.



FIG. 10 is a perspective view schematically showing the internal configuration of the polarization monitor shown in FIG. 1. With reference to FIG. 10, the polarization monitor 10 is provided with a first beam splitter 13a disposed in the optical path between the micro fly's eye lens 12 and the condenser optical system 14. The first beam splitter 13a has, for example, the form of a non-coated plane-parallel plate made of quartz glass (i.e., raw glass), and has a function of taking reflected light in a polarization state different from a polarization state of incident light, out of the optical path.


The light taken out of the optical path by the first beam splitter 13a is incident to a second beam splitter 13b. The second beam splitter 13b has, for example, the form of a non-coated plane-parallel plate made of quartz glass as the first beam splitter 13a does, and has a function of generating reflected light in a polarization state different from the polarization state of incident light. The polarization monitor is so set that the P-polarized light for the first beam splitter 13a becomes the S-polarized light for the second beam splitter 13b and that the S-polarized light for the first beam splitter 13a becomes the P-polarized light for the second beam splitter 13b.


Light transmitted by the second beam splitter 13b is detected by first light intensity detector 13c, while light reflected by the second beam splitter 13b is detected by second light intensity detector 13d. Outputs from the first light intensity detector 13c and from the second light intensity detector 13d are supplied each to a controller (not shown). The controller drives the quarter wave plate 4a, half wave plate 4b, and depolarizer 4c constituting the polarization state converter 4, according to need.


As described above, the reflectance for the P-polarized light and the reflectance for the S-polarized light are substantially different in the first beam splitter 13a and in the second beam splitter 13b. In the polarization monitor 13, therefore, the reflected light from the first beam splitter 13a includes the S-polarization component (i.e., the S-polarization component for the first beam splitter 13a and P-polarization component for the second beam splitter 13b), for example, which is approximately 10% of the incident light to the first beam splitter 13a, and the P-polarization component (i.e., the P-polarization component for the first beam splitter 13a and S-polarization component for the second beam splitter 13b), for example, which is approximately 1% of the incident light to the first beam splitter 13a.


The reflected light from the second beam splitter 13b includes the P-polarization component (i.e., the P-polarization component for the first beam splitter 13a and S-polarization component for the second beam splitter 13b), for example, which is approximately 10%×1%=0.1% of the incident light to the first beam splitter 13a, and the S-polarization component (i.e., the S-polarization component for the first beam splitter 13a and P-polarization component for the second beam splitter 13b), for example, which is approximately 1%×10%=0.1% of the incident light to the first beam splitter 13a.


In the polarization monitor 13, as described above, the first beam splitter 13a has the function of extracting the reflected light in the polarization state different from the polarization state of the incident light out of the optical path in accordance with its reflection characteristic. As a result, though there is slight influence of variation of polarization due to the polarization characteristic of the second beam splitter 13b, it is feasible to detect the polarization state (degree of polarization) of the incident light to the first beam splitter 13a and, therefore, the polarization state of the illumination light to the mask M, based on the output from the first light intensity detector 13c (information about the intensity of transmitted light from the second beam splitter 13b, i.e., information about the intensity of light virtually in the same polarization state as that of the reflected light from the first beam splitter 13a).


The polarization monitor 13 is so set that the P-polarized light for the first beam splitter 13a becomes the S-polarized light for the second beam splitter 13b and that the S-polarized light for the first beam splitter 13a becomes the P-polarized light for the second beam splitter 13b. As a result, it is feasible to detect the light quantity (intensity) of the incident light to the first beam splitter 13a and, therefore, the light quantity of the illumination light to the mask M, with no substantial effect of change in the polarization state of the incident light to the first beam splitter 13a, based on the output from the second light intensity detector 13d (information about the intensity of light successively reflected by the first beam splitter 13a and the second beam splitter 13b).


In this manner, it is feasible to detect the polarization state of the incident light to the first beam splitter 13a and, therefore, to determine whether the illumination light to the mask M is in the desired unpolarized state or linearly polarized state, using the polarization monitor 13. When the controller determines that the illumination light to the mask M (eventually, to the wafer W) is not in the desired unpolarized state or linearly polarized state, based on the detection result of the polarization monitor 13, it drives and adjusts the quarter wave plate 4a, half wave plate 4b, and depolarizer 4c constituting the polarization state converter 4 so that the state of the illumination light to the mask M can be adjusted into the desired unpolarized state or linearly polarized state.


Quadrupole illumination can be implemented by setting a diffractive optical element for quadrupole illumination (not shown) in the illumination optical path, instead of the diffractive optical element 5 for annular illumination. The diffractive optical element for quadrupole illumination has such a function that when a parallel beam having a rectangular cross section is incident thereto, it forms a light intensity distribution of a quadrupole shape in the far field thereof. Therefore, the beam passing through the diffractive optical element for quadrupole illumination forms an illumination field of a quadrupole shape consisting of four circular illumination fields centered around the optical axis AX, for example, on the entrance surface of the micro fly's eye lens 12. As a result, the secondary light source of the same quadrupole shape as the illumination field formed on the entrance surface is also formed on the rear focal plane of the micro fly's eye lens 12.


In addition, ordinary circular illumination can be implemented by setting a diffractive optical element for circular illumination (not shown) in the illumination optical path, instead of the diffractive optical element 5 for annular illumination. The diffractive optical element for circular illumination has such a function that when a parallel beam having a rectangular cross section is incident thereto, it forms a light intensity distribution of a circular shape in the far field. Therefore, a beam passing through the diffraction optical element for circular illumination forms a circular illumination field centered around the optical axis AX, for example, on the entrance plane of the micro fly's eye lens 12. As a result, the secondary light source of the same circular shape as the illumination field formed on the entrance surface is also formed on the rear focal plane of the micro fly's eye lens 12.


Furthermore, a variety of multipole illuminations (dipole illumination, octapole illumination, etc.) can be implemented by setting other diffractive optical elements for multipole illuminations (not shown), instead of the diffractive optical element 5 for annular illumination. Likewise, modified illuminations in various forms can be implemented by setting diffractive optical elements with appropriate characteristics (not shown) in the illumination optical path, instead of the diffractive optical element 5 for annular illumination.


In the present embodiment, a diffractive optical element 50 for so-called azimuthally polarized annular illumination can be set, instead of the diffractive optical element 5 for annular illumination, in the illumination optical path, so as to implement the modified illumination in which the beam passing through the secondary light source of the annular shape is set in the azimuthal polarization state, i.e., the azimuthally polarized annular illumination. FIG. 11 is an illustration schematically showing the configuration of the diffractive optical element for azimuthally polarized annular illumination according to the present embodiment. FIG. 12 is an illustration schematically showing the secondary light source of the annular shape set in the azimuthal polarization state.


With reference to FIGS. 11 and 12, the diffractive optical element 50 for azimuthally polarized annular illumination according to the present embodiment is constructed in such an arrangement that four types of basic elements 50A-50D having the same cross section of a rectangular shape and having their respective thicknesses different from each other along the direction of transmission of light (Y-direction) (i.e., lengths in the direction of the optical axis) are arranged lengthwise and breadthwise and densely. The thicknesses are set as follows: the thickness of the first basic elements 50A is the largest, the thickness of the fourth basic elements 50D the smallest, and the thickness of the second basic elements 50B is greater than the thickness of the third basic elements 50C.


The diffractive optical element 50 includes an approximately equal number of first basic elements 50A, second basic elements 50B, third basic elements 50C, and fourth basic elements 50D, and the four types of basic elements 50A-50D are arranged substantially at random. Furthermore, a diffracting surface (indicated by hatching in the drawing) is formed on the mask side of each basic element 50A-50D, and the diffracting surfaces of the respective basic elements 50A-50D are arrayed along one plane perpendicular to the optical axis AX (not shown in FIG. 11). As a result, the mask-side surface of the diffractive optical element 50 is planar, while the light-source-side surface of the diffractive optical element 50 is uneven due to the differences among the thicknesses of the respective basic elements 50A-50D.


The diffracting surface of each first basic element 50A is arranged to form a pair of arc regions (bow shape) 31A symmetric with respect to an axis line of the Z-direction passing the optical axis AX, in the secondary light source 31 of the annular shape shown in FIG. 12. Namely, as shown in FIG. 13, each first basic element 50A has a function of forming a pair of arc (bow shape) light intensity distributions 32A symmetric with respect to the axis line of the Z-direction passing the optical axis AX (corresponding to a pair of arc regions 31A) in the far field 50E of the diffractive optical element 50 (i.e., in the far field of each basic element 50A-50D).


The diffracting surface of each second basic element 50B is arranged so as to form a pair of arc (bow shape) regions 31B symmetric with respect to an axis line obtained by rotating the axis line of the Z-direction passing the optical axis AX, by −45° around the Y-axis (or obtained by rotating it by 45° counterclockwise in FIG. 12). Namely, as shown in FIG. 14, each second basic element 50B has a function of forming a pair of arc (bow shape) light intensity distributions 32B symmetric with respect to the axis line resulting from the −45° rotation around the Y-axis, of the axis line of the Z-direction passing the optical axis AX (corresponding to a pair of arc regions 31B), in the far field 50E.


The diffracting surface of each third basic element 50C is arranged to form a pair of arc (bow shape) regions 31C symmetric with respect to an axis line of the X-direction passing the optical axis AX. Namely, as shown in FIG. 15, each third basic element 50C has a function of forming a pair of arc (bow shape) light intensity distributions 32C symmetric with respect to the axis line of the X-direction passing the optical axis AX (corresponding to a pair of arc regions 31C), in the far field 50E.


The diffracting surface of each fourth basic element 50D is arranged so as to form a pair of arc (bow shape) regions 31D symmetric with respect to an axis line obtained by rotating the axis of the Z-direction passing the optical axis AX by +45° around the Y-axis (i.e., obtained by rotating it by 45° clockwise in FIG. 12). Namely, as shown in FIG. 16, each fourth basic element 50D has a function of forming a pair of arc (bow shape) light intensity distributions 32D symmetric with respect to the axis line resulting from the +45° rotation around the Y-axis, of the axis line of the Z-direction passing the optical axis AX (corresponding to a pair of arc regions 31D), in the far field 50E. The sizes of the respective arc regions 31A-31D are approximately equal to each other, and they form the secondary light source 31 of the annular shape centered around the optical axis AX, while the eight arc regions 31A-31D are not overlapping with each other and not spaced from each other.


In the present embodiment, each basic element 50A-50D is made of crystalline quartz being an optical material with optical activity, and the crystallographic axis of each basic element 50A-50D is set approximately to coincide with the optical axis AX. The optical activity of crystalline quartz will be briefly described below with reference to FIG. 17. With reference to FIG. 17, an optical member 35 of a plane-parallel plate shape made of crystalline quartz and in a thickness d is arranged so that its crystallographic axis coincides with the optical axis AX. In this case, by virtue of the optical activity of the optical member 35, incident, linearly polarized light emerges in a state in which its-polarization direction is rotated by θ around the optical axis AX.


At this time, the angle θ of rotation of the polarization direction due to the optical activity of the optical member 35 is represented by Eq (1) below, using the thickness d of the optical member 35 and the rotatory power ρ of crystalline quartz.

θ=d·ρ  (1)


In general, the rotatory power ρ of crystalline quartz tends to increase with decrease in the wavelength of used light and, according to the description on page 167 in “Applied Optics II,” the rotatory power ρ of crystalline quartz for light having the wavelength of 250.3 nm is 153.9°/mm.


In the present embodiment the first basic elements 50A are designed in such a thickness dA that when light of linear polarization having the direction of polarization along the Z-direction is incident thereto, they output light of linear polarization having the polarization direction along a direction resulting from +180° rotation of the Z-direction around the Y-axis, i.e., along the Z-direction, as shown in FIG. 13. As a result, the polarization direction of beams passing through a pair of arc light intensity distributions 32A formed in the far field 50E is also the Z-direction, and the polarization direction of beams passing through a pair of arc regions 31A shown in FIG. 12 is also the Z-direction.


The second basic elements 50B are designed in such a thickness dB that when light of linear polarization having the polarization direction along the Z-direction is incident thereto, they output light of linear polarization having the polarization direction along a direction resulting from +135° rotation of the Z-direction around the Y-axis, i.e., along a direction resulting from −45° rotation of the Z-direction around the Y-axis, as shown in FIG. 14. As a result, the polarization direction of beams passing through a pair of arc light intensity distributions 32B formed in the far field 50E is also the direction obtained by rotating the Z-direction by −45° around the Y-axis, and the polarization direction of beams passing through a pair of arc regions 31A shown in FIG. 12 is also the direction obtained by rotating the Z-direction by −45° around the Y-axis.


The third basic elements 50C are designed in such a thickness dC that when light of linear polarization having the polarization direction along the Z-direction is incident thereto, they output light of linear polarization having the polarization direction along a direction resulting from +90° rotation of the Z-direction around the Y-axis, i.e., along the X-direction, as shown in FIG. 15. As a result, the polarization direction of beams passing through a pair of arc light intensity distributions 32C formed in the far field 50E is also the X-direction, and the polarization direction of beams passing through a pair of arc regions 31C shown in FIG. 12 is also the X-direction.


The fourth basic elements 50D are designed in such a thickness dD that when light of linear polarization having the polarization direction along the Z-direction is incident thereto, they output light of linear polarization having the polarization direction along a direction resulting from +45° rotation of the Z-direction around the Y-axis, as shown in FIG. 16. As a result, the polarization direction of beams passing through a pair of arc light intensity distributions 32D formed in the far field 50E is also the direction obtained by rotating the Z-direction by +45° around the Y-axis, and the polarization direction of beams passing through a pair of arc regions 31D shown in FIG. 12 is also the direction obtained by rotating the Z-direction by +45° around the Y-axis.


In the present embodiment, the diffractive optical element 50 for azimuthally polarized annular illumination is set in the illumination optical system on the occasion of effecting the azimuthally polarized annular illumination, whereby the light of linear polarization having the polarization direction along the Z-direction is made incident to the diffractive optical element 50. As a result, the secondary light source of the annular shape (illumination pupil distribution of annular shape) 31 is formed on the rear focal plane of the micro fly's eye lens 12 (i.e., on or near the illumination pupil), as shown in FIG. 12, and the beams passing through the secondary light source 31 of the annular shape are set in the azimuthal polarization state.


In the azimuthal polarization state, the beams passing through the respective arc regions 31A-31D constituting the secondary light source 31 of the annular shape turn into the linearly polarized state having the polarization direction substantially coincident with a tangent line to a circle centered around the optical axis AX, at the central position along the circumferential direction of each arc region 31A-31D.


In the present embodiment, as described above, the beam transforming element 50 for forming the predetermined light intensity distribution on the predetermined surface on the basis of the incident beam comprises the first basic element 50A made of the optical material with optical activity, for forming the first region distribution 32A of the predetermined light intensity distribution on the basis of the incident beam; and the second basic element 50B made of the optical material with optical activity, for forming the second region distribution 32B of the predetermined light intensity distribution on the basis of the incident beam, and the first basic element 50A and the second basic element 50B have their respective thicknesses different from each other along the direction of transmission of light.


Thanks to this configuration, the present embodiment is able to form the secondary light source 31 of the annular shape in the azimuthal polarization state, with no substantial loss of light quantity, through the diffracting action and optical rotating action of the diffractive optical element 50 as the beam transforming element, different from the conventional technology giving rise to the large loss of light quantity at the aperture stop.


In a preferred form of the present embodiment, the thickness of the first basic element 50A and the thickness of the second basic element 50B are so set that with incidence of linearly polarized light the polarization direction of the linearly polarized light forming the first region distribution 32A is different from the polarization direction of the linearly polarized light forming the second region distribution 32B. Preferably, the first region distribution 32A and the second region distribution 32B are positioned in at least a part of a predetermined annular region, which is a predetermined annular region centered around a predetermined point on the predetermined surface, and the beams passing through the first region distribution 32A and through the second region distribution 32B have a polarization state in which a principal component is linearly polarized light having the polarization direction along the circumferential direction of the predetermined annular region.


In this case, preferably, the predetermined light intensity distribution has a contour of virtually the same shape as the predetermined annular region, the polarization state of the beam passing through the first region distribution 32A has a linear polarization component substantially coincident with a tangential direction to a circle centered around a predetermined point at the central position along the circumferential direction of the first region distribution 32A, and the polarization state of the beam passing through the second region distribution 32B has a linear polarization component substantially coincident with a tangential direction to a circle centered around a predetermined point at the central position along the circumferential direction of the second region distribution 32B. In another preferred configuration, the predetermined light intensity distribution is a distribution of a multipole shape in the predetermined annular region, the polarization state of the beam passing through the first region distribution has a linear polarization component substantially coincident with a tangential direction to a circle centered around a predetermined point at the central position along the circumferential direction of the first region distribution, and the polarization state of the beam passing through the second region distribution has a linear polarization component substantially coincident with a tangential direction to a circle centered around a predetermined point at the central position along the circumferential direction of the second region distribution.


In a preferred form of the present embodiment, the first basic element and the second basic element are made of an optical material with an optical rotatory power of not less than 100°/mm for light of a wavelength used. Preferably, the first basic element and the second basic element are made of crystalline quartz. The beam transforming element preferably includes virtually the same number of first basic elements and second basic elements. The first basic element and the second basic element preferably have diffracting action or refracting action.


In another preferred form of the present embodiment, preferably, the first basic element forms at least two first region distributions on the predetermined surface on the basis of the incident beam, and the second basic element forms at least two second region distributions on the predetermined surface on the basis of the incident beam. In addition, preferably, the beam transforming element further comprises the third basic element 50C made of the optical material with optical activity, for forming the third region distribution 32C of the predetermined light intensity distribution on the basis of the incident beam, and the fourth basic element 50D made of the optical material with optical activity, for forming the fourth region distribution 32D of the predetermined light intensity distribution on the basis of the incident beam.


In the present embodiment, the beam transforming element 50 for forming the predetermined light intensity distribution of the shape different from the sectional shape of the incident beam, on the predetermined surface, has the diffracting surface or refracting surface for forming the predetermined light intensity distribution on the predetermined surface, the predetermined light intensity distribution is a distribution in at least a part of a predetermined annular region, which is a predetermined annular region centered around a predetermined point on the predetermined surface, and the beam from the beam transforming element passing through the predetermined annular region has a polarization state in which a principal component is linearly polarized light having the direction of polarization along the circumferential direction of the predetermined annular region.


In the configuration as described above, the present embodiment, different from the conventional technology giving rise to the large loss of light quantity at the aperture stop, is able to form the secondary light source 31 of the annular shape in the azimuthal polarization state, with no substantial loss of light quantity, through the diffracting action and optical rotating action of the diffractive optical element 50 as the beam transforming element.


In a preferred form of the present embodiment, the predetermined light intensity distribution has a contour of a multipole shape or annular shape. The beam transforming element is preferably made of an optical material with optical activity.


The illumination optical apparatus of the present embodiment is the illumination optical apparatus for illuminating the surface to be illuminated, based on the beam from the light source, and comprises the above-described beam transforming element for transforming the beam from the light source in order to form the illumination pupil distribution on or near the illumination pupil of the illumination optical apparatus. In this configuration, the illumination optical apparatus of the present embodiment is able to form the illumination pupil distribution of the annular shape in the azimuthal polarization state while well suppressing the loss of light quantity.


Here the beam transforming element is preferably arranged to be replaceable with another beam transforming element having a different characteristic. Preferably, the apparatus further comprises the wavefront splitting optical integrator disposed in the optical path between the beam transforming element and the surface to be illuminated, and the beam transforming element forms the predetermined light intensity distribution on the entrance surface of the optical integrator on the basis of the incident beam.


In a preferred form of the illumination optical apparatus of the present embodiment, at least one of the light intensity distribution on the predetermined surface and the polarization state of the beam from the beam transforming element passing through the predetermined annular region is set in consideration of the influence of an optical member disposed in the optical path between the light source and the surface to be illuminated. Preferably, the polarization state of the beam from the beam transforming element is so set that the light illuminating the surface to be illuminated is in a polarization state in which a principal component is S-polarized light.


The exposure apparatus of the present embodiment comprises the above-described illumination optical apparatus for illuminating the mask, and projects the pattern of the mask onto the photosensitive substrate. Preferably, at least one of the light intensity distribution on the predetermined surface and the polarization state of the beam from the beam transforming element passing through the predetermined annular region is set in consideration of the influence of an optical member disposed in the optical path between the light source and the photosensitive substrate. Preferably, the polarization state of the beam from the beam transforming element is so set that the light illuminating the photosensitive substrate is in a polarization state in which a principal component is S-polarized light.


The exposure method of the present embodiment comprises the illumination step of illuminating the mask by use of the above-described illumination optical apparatus, and the exposure step of projecting the pattern of the mask onto the photosensitive substrate. Preferably, at least one of the light intensity distribution on the predetermined surface and the polarization state of the beam from the beam transforming element passing through the predetermined annular region is set in consideration of the influence of an optical member disposed in the optical path between the light source and the photosensitive substrate. Preferably, the polarization state of the beam from the beam transforming element is so set that the light illuminating the photosensitive substrate is in a polarization state in which a principal component is S-polarized light.


In other words, the illumination optical apparatus of the present embodiment is able to form the illumination pupil distribution of the annular shape in the azimuthal polarization state while well suppressing the loss of light quantity. As a result, the exposure apparatus of the present embodiment is able to transcribe the microscopic pattern in an arbitrary direction under an appropriate illumination condition faithfully and with high throughput because it uses the illumination optical apparatus capable of forming the illumination pupil distribution of the annular shape in the azimuthal polarization state while well suppressing the loss of light quantity.


In the azimuthally polarized annular illumination based on the illumination pupil distribution of the annular shape in the azimuthal polarization state, the light illuminating the wafer W as a surface to be illuminated is in the polarization state in which the principal component is the S-polarized light. Here the S-polarized light is linearly polarized light having the direction of polarization along a direction normal to a plane of incidence (i.e., polarized light with the electric vector oscillating in the direction normal to the plane of incidence). The plane of incidence herein is defined as the following plane: when light arrives at a boundary surface of a medium (a surface to be illuminated: surface of wafer W), the plane includes the normal to the boundary plane at the arrival point and the direction of incidence of light.


In the above-described embodiment, the diffractive optical element 50 for azimuthally polarized annular illumination is constructed by randomly arranging virtually the same number of four types of basic elements 50A-50D with the same rectangular cross section lengthwise and breadthwise and densely. However, without having to be limited to this, a variety of modification examples can be contemplated as to the number of basic elements of each type, the sectional shape, the number of types, the arrangement, and so on.


In the above-described embodiment, the secondary light source 31 of the annular shape centered around the optical axis AX is composed of the eight arc regions 31A-31D arrayed without overlapping with each other and without being spaced from each other, using the diffractive optical element 50 consisting of the four types of basic elements 50A-50D. However, without having to be limited to this, a variety of modification examples can be contemplated as to the number of regions forming the secondary light source of the annular shape, the shape, the arrangement, and so on.


Specifically, as shown in FIG. 18A, it is also possible to form a secondary light source 33a of an octapole shape in the azimuthal polarization state consisting of eight arc (bow shape) regions spaced from each other along the circumferential direction, for example, using the diffractive optical element consisting of four types of basic elements. In addition, as shown in FIG. 18B, it is also possible to form a secondary light source 33b of a quadrupole shape in the azimuthal polarization state consisting of four arc (bow shape) regions spaced from each other along the circumferential direction, for example, using the diffractive optical element consisting of four types of basic elements. In the secondary light source of the octapole shape or the secondary light source of the quadrupole shape, the shape of each region is not limited to the arc shape, but it may be, for example, circular, elliptical, or sectorial. Furthermore, as shown in FIG. 19, it is also possible to form a secondary light source 33c of an annular shape in the azimuthal polarization state consisting of eight arc regions overlapping with each other along the circumferential direction, for example, using the diffractive optical element consisting of four types of basic elements.


In addition to the quadrupole or octapole secondary light source in the azimuthal polarization state consisting of the four or eight regions spaced from each other along the circumferential direction, the secondary light source may be formed in a hexapole shape in the azimuthal polarization state and of six regions spaced from each other along the circumferential direction, as shown in FIG. 20A. In addition, as shown in FIG. 20B, the secondary light source may be formed as one having secondary light source of a multipole shape in the azimuthal polarization state consisting of a plurality of regions spaced from each other along the circumferential direction, and a secondary light source on the center pole in the unpolarized state or linearly polarized state consisting of a region on the optical axis. Furthermore, the secondary light source may also be formed in a dipole shape in the azimuthal polarization state and of two regions spaced from each other along the circumferential direction.


In the aforementioned embodiment, as shown in FIG. 11, the four types of basic elements 50A-50D are individually formed, and the diffractive optical element 50 is constructed by combining these elements. However, without having to be limited to this, the diffractive optical element 50 can also be integrally constructed in such a manner that a crystalline quartz substrate is subjected, for example, to etching to form the exit-side diffracting surfaces and the entrance-side uneven surfaces of the respective basic elements 50A-50D.


In the aforementioned embodiment each basic element 50A-50D (therefore, the diffractive optical element 50) is made of crystalline quartz. However, without having to be limited to this, each basic element can also be made of another appropriate optical material with optical activity. In this case, it is preferable to use an optical material with an optical rotatory power of not less than 100°/mm for light of a wavelength used. Specifically, use of an optical material with a low rotatory power is undesirable because the thickness necessary for achieving the required rotation angle of the polarization direction becomes too large, so as to cause the loss of light quantity.


The aforementioned embodiment is arranged to form the illumination pupil distribution of the annular shape (secondary light source), but, without having to be limited to this, the illumination pupil distribution of a circular shape can also be formed on or near the illumination pupil. In addition to the illumination pupil distribution of the annular shape and the illumination pupil distribution of the multipole shape, it is also possible to implement a so-called annular illumination with the center pole and a multipole illumination with the center pole, for example, by forming a center region distribution including the optical axis.


In the aforementioned embodiment, the illumination pupil distribution in the azimuthal polarization state is formed on or near the illumination pupil. However, the polarization direction can vary because of polarization aberration (retardation) of an optical system (the illumination optical system or the projection optical system) closer to the wafer than the diffractive optical element as the beam transforming element. In this case, it is necessary to properly set the polarization state of the beam passing through the illumination pupil distribution formed on or near the illumination pupil, with consideration to the influence of polarization aberration of these optical systems.


In connection with the foregoing polarization aberration, reflected light can have a phase difference in each polarization direction because of a polarization characteristic of a reflecting member disposed in the optical system (the illumination optical system or the projection optical system) closer to the wafer than the beam transforming element. In this case, it is also necessary to properly set the polarization state of the beam passing through the illumination pupil distribution formed on or near the illumination pupil, with consideration to the influence of the phase difference due to the polarization characteristic of the reflecting member.


The reflectance in the reflecting member can vary depending upon the polarization direction, because of a polarization characteristic of a reflecting member disposed in the optical system (the illumination optical system or the projection optical system) closer to the wafer than the beam transforming element. In this case, it is desirable to provide offsets on the light intensity distribution formed on or near the illumination pupil, i.e. to provide a distribution of numbers of respective basic elements, in consideration of the reflectance in each polarization direction. The same technique can also be similarly applied to cases where the transmittance in the optical system closer to the wafer than the beam transforming element varies depending upon the polarization direction.


In the foregoing embodiment, the light-source-side surface of the diffractive optical element 50 is of the uneven shape with level differences according to the differences among the thicknesses of respective basic elements 50A-50D. Then the surface on the light source side (entrance side) of the diffractive optical element 50 can also be formed in a planar shape, as shown in FIG. 21, by adding a compensation member 36 on the entrance side of the basic elements except for the first basic elements 50A with the largest thickness, i.e., on the entrance side of the second basic elements 50B, third basic elements 50C, and fourth basic elements 50D. In this case, the compensation member 36 is made of an optical material without optical activity.


The aforementioned embodiment shows the example wherein the beam passing through the illumination pupil distribution formed on or near the illumination pupil has only the linear polarization component along the circumferential direction. However, without having to be limited to this, the expected effect of the present invention can be achieved as long as the polarization state of the beam passing through the illumination pupil distribution is a state in which the principal component is linearly polarized light having the polarization direction along the circumferential direction.


The foregoing embodiment uses the diffractive optical element consisting of the plural types of basic elements having the diffracting action, as the beam transforming element for forming the light intensity distribution of the shape different from the sectional shape of the incident beam, on the predetermined plane, based on the incident beam. However, without having to be limited to this, it is also possible to use as the beam transforming element a refracting optical element, for example, consisting of plural types of basic elements having refracting surfaces virtually optically equivalent to the diffracting surfaces of the respective basic elements, i.e., consisting of plural types of basic elements having the refracting action.


The exposure apparatus according to the foregoing embodiment is able to produce microdevices (semiconductor elements, image pickup elements, liquid crystal display elements, thin-film magnetic heads, etc.) by illuminating a mask (reticle) by the illumination optical apparatus (illumination step) and projecting a pattern for transcription formed on the mask, onto a photosensitive substrate by use of the projection optical system (exposure step). The following will describe an example of a procedure of producing semiconductor devices as microdevices by forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate by means of the exposure apparatus of the foregoing embodiment, with reference to the flowchart of FIG. 22.


The first step 301 in FIG. 22 is to deposit a metal film on each of wafers in one lot. The next step 302 is to apply a photoresist onto the metal film on each wafer in the lot. Thereafter, step 303 is to sequentially transcribe an image of a pattern on a mask into each shot area on each wafer in the lot, through the projection optical system by use of the exposure apparatus of the foregoing embodiment. Subsequently, step 304 is to perform development of the photoresist on each wafer in the lot, and step 305 thereafter is to perform etching with the resist pattern as a mask on each wafer in the lot, thereby forming a circuit pattern corresponding to the pattern on the mask, in each shot area on each wafer. Thereafter, devices such as semiconductor elements are produced through execution of formation of circuit patterns in upper layers and others. The semiconductor device production method as described above permits us to produce the semiconductor devices with extremely fine circuit patterns at high throughput.


The exposure apparatus of the foregoing embodiment can also be applied to production of a liquid crystal display element as a microdevice in such a manner that predetermined patterns (a circuit pattern, an electrode pattern, etc.) are formed on a plate (glass substrate). An example of a procedure of this production will be described below with reference to the flowchart of FIG. 23. In FIG. 23, pattern forming step 401 is to execute a so-called photolithography step of transcribing a pattern on a mask onto a photosensitive substrate (a glass substrate coated with a resist or the like) by use of the exposure apparatus of the foregoing embodiment. In this photolithography step, the predetermined patterns including a number of electrodes and others are formed on the photosensitive substrate. Thereafter, the exposed substrate is subjected to steps such as a development step, an etching step, a resist removing step, etc., to form the predetermined patterns on the substrate, followed by next color filter forming step 402.


The next color filter forming step 402 is to form a color filter in which a number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arrayed in a matrix, or in which a plurality of sets of filters of three stripes of R, G, and B are arrayed in the direction of horizontal scan lines. After the color filter forming step 402, cell assembly step 403 is carried out. The cell assembly step 403 is to assemble a liquid crystal panel (liquid crystal cell), using the substrate with the predetermined patterns obtained in the pattern forming step 401, the color filter obtained in the color filter forming step 402, and so on.


In the cell assembly step 403, for example, a liquid crystal is poured into the space between the substrate with the predetermined patterns obtained in the pattern forming step 401 and the color filter obtained in the color filter forming step 402 to produce the liquid crystal panel (liquid crystal cell). Thereafter, module assembly step 404 is carried out to attach such components as an electric circuit, a backlight, and so on for implementing the display operation of the assembled liquid crystal panel (liquid crystal cell), to complete the liquid crystal display element. The production method of the liquid crystal display element described above permits us to produce the liquid crystal display elements with extremely fine circuit patterns at high throughput.


The foregoing embodiment is arranged to use the KrF excimer laser light (wavelength: 248 nm) or the ArF excimer laser light (wavelength: 193 nm) as the exposure light, but, without having to be limited to this, the present invention can also be applied to other appropriate laser light sources, e.g., an F2 laser light source for supplying laser light of the wavelength of 157 nm. Furthermore, the foregoing embodiment described the present invention, using the exposure apparatus with the illumination optical apparatus as an example, but it is apparent that the present invention can be applied to ordinary illumination optical apparatus for illuminating the surface to be illuminated, except for the mask and wafer.


In the foregoing embodiment, it is also possible to apply the so-called liquid immersion method, which is a technique of filling a medium (typically, a liquid LM) with a refractive index larger than 1.1 in the optical path between the projection optical system and the photosensitive substrate, as shown in FIG. 1(b). In this case, the technique of filling the liquid in the optical path between the projection optical system and the photosensitive substrate can be selected from the technique of locally filling the liquid as disclosed in PCT International Publication No. WO99/49504, the technique of moving a stage holding a substrate as an exposure target in a liquid bath as disclosed in Japanese Patent Application Laid-Open No. 6-124873, the technique of forming a liquid bath in a predetermined depth on a stage and holding the substrate therein as disclosed in Japanese Patent Application Laid-Open No. 10-303114, and so on. The PCT International Publication No. WO99/49504, Japanese Patent Application Laid-Open No. 6-124873, and Japanese Patent Application Laid-Open No. 10-303114 are incorporated herein by reference.


The liquid is preferably one that is transparent to the exposure light, that has the refractive index as high as possible, and that is stable against the projection optical system and the photoresist applied to the surface of the substrate; for example, where the exposure light is the KrF excimer laser light or the ArF excimer laser light, pure water or deionized water can be used as the liquid. Where the F2 laser light is used as the exposure light, the liquid can be a fluorinated liquid capable of transmitting the F2 laser light, e.g., fluorinated oil or perfluoropolyether (PFPE).


From the invention thus described, it will be obvious that the invention may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention, and all such modifications as would be obvious to one skilled in the art are intended for inclusion within the scope of the following claims.

Claims
  • 1. An illumination optical apparatus which illuminates an object with light, the illumination optical apparatus comprising: an optical member made of an optical material with optical rotatory power, which rotates a polarization direction of a linear polarization incident on the optical member,the optical member being arranged in an optical path of the light so that an optic axis of the optical material of the optical member is substantially parallel to an optical axis of the illumination optical apparatus at a location where the optical material is arranged; andan optical integrator arranged in the optical path of the light on an exit side of the optical member,wherein the optical member is arranged so that the optical member and a pupil plane of the illumination optical apparatus are substantially conjugate with each other, the pupil plane substantially being located at a rear focal plane of the optical integrator, andwherein the light of which a polarization direction is rotated by the optical member on the basis of the optical rotatory power is irradiated onto the object through the pupil plane of the illumination optical apparatus.
  • 2. An exposure apparatus which exposes a substrate with light from a predetermined pattern on a mask, the exposure apparatus comprising: the illumination optical apparatus as defined in claim 1, which illuminates the predetermined pattern; anda projection optical system which projects an image of the predetermined pattern, being illuminated by the illumination optical apparatus, onto the substrate.
  • 3. The exposure apparatus according to claim 2, wherein the image of the predetermined pattern is projected onto the substrate through a liquid disposed in an optical path between the projection optical system and the substrate.
  • 4. The exposure apparatus according to claim 3, wherein a polarization state of the light from the pupil plane of the illumination optical apparatus is a state in which a principal component is s-polarized light on the mask.
  • 5. An exposure method comprising: illuminating the predetermined pattern by using the exposure apparatus as defined in claim 2; andprojecting the image of the predetermined pattern onto a photosensitive substrate by using the exposure apparatus as defined in claim 2.
  • 6. A device manufacturing method comprising: illuminating the predetermined pattern using the exposure apparatus as defined in claim 2;projecting the image of the predetermined pattern onto a photosensitive substrate by using the exposure apparatus as defined in claim 2; anddeveloping the photosensitive substrate.
  • 7. The exposure apparatus according to claim 2, wherein the light from the pupil plane of the illumination optical apparatus is irradiated onto the mask in a polarization state in which a principal component is S-polarized light.
  • 8. The exposure apparatus according to claim 2, wherein the optical member of the illumination optical apparatus rotates a polarization direction of the light so that the polarization direction of the light in a region on the pupil plane is substantially coincident with a circumferential direction about the optical axis, the region being distributed away from the optical axis on the pupil plane.
  • 9. The exposure apparatus according to claim 8, wherein a first thickness of the optical member in an optical path of a first partial light of the light is different from a second thickness of the optical member in an optical path of a second partial light of the light different from the first partial light, and wherein the first partial light passes through a first position in the region on the pupil plane, and the second partial light passes through a second position in the region on the pupil plane, the second position being different from the first position.
  • 10. The exposure apparatus according to claim 8, wherein the region on the pupil plane is an annular region about the optical axis.
  • 11. The exposure apparatus according to claim 8, wherein the region on the pupil plane comprises a plurality of substantially discrete regions within an annular region about the optical axis.
  • 12. The exposure apparatus according to claim 8, wherein the region on the pupil plane comprises a plurality of substantially discrete regions which are aligned along a circumference about the optical axis.
  • 13. The exposure apparatus according to claim 12, wherein the plurality of the regions on the pupil plane comprises a pair of regions which is arranged symmetrically with respect to the optical axis.
  • 14. The exposure apparatus according to claim 8, wherein the optical integrator comprises a fly's eye lens.
  • 15. The exposure apparatus according to claim 8, wherein the optical integrator is an optical integrator of wavefront splitting type.
  • 16. The exposure apparatus according to claim 8, further comprising an optical system arranged in the optical path between the optical member and the optical integrator, the optical system forming a conjugated position relative to the pupil plane in combination with the optical integrator.
  • 17. The exposure apparatus according to claim 16, wherein the optical system comprises a lens system of which a rear focal plane is substantially arranged at an entrance surface of the optical integrator, and wherein the optical member is arranged so that the optical member and a front focal plane of the lens system are substantially conjugate with each other.
  • 18. The exposure apparatus according to claim 16, wherein the optical system comprises a first lens system and a second lens system, the first lens system being arranged between the optical member and the optical integrator so as to form an intermediate conjugated position substantially conjugate with the optical member, the second lens system being arranged between the intermediate conjugated position and the optical integrator so that the intermediate conjugated position and an entrance surface of the optical integrator are substantially in the relation of Fourier transform.
  • 19. The illumination optical apparatus according to claim 1, wherein the light, of which the polarization direction is rotated by the optical member, is irradiated onto the object in a polarization state in which a principal component is S-polarized light.
  • 20. The illumination optical apparatus according to claim 1, wherein the optical member rotates a polarization direction of the light so that the polarization direction of the light in a region on the pupil plane is substantially coincident with a circumferential direction about the optical axis, the region being distributed away from the optical axis on the pupil plane.
  • 21. The illumination optical apparatus according to claim 20, wherein a first thickness of the optical member in an optical path of a first partial light of the light is different from a second thickness of the optical member in an optical path of a second partial light of the light different from the first partial light, and wherein the first partial light passes through a first position in the region on the pupil plane, and the second partial light passes through a second position in the region on the pupil plane, the second position being different from the first position.
  • 22. The illumination optical apparatus according to claim 20, wherein the region on the pupil plane is an annular region about the optical axis.
  • 23. The illumination optical apparatus according to claim 20, wherein the region on the pupil plane comprises a plurality of substantially discrete regions within an annular region about the optical axis.
  • 24. The illumination optical apparatus according to claim 20, wherein the region on the pupil plane comprises a plurality of substantially discrete regions which are aligned along a circumference about the optical axis.
  • 25. The illumination optical apparatus according to claim 24, wherein the plurality of the regions on the pupil plane comprises a pair of regions which is arranged symmetrically with respect to the optical axis.
  • 26. The illumination optical apparatus according to claim 20, wherein the optical integrator comprises a fly's eye lens.
  • 27. The illumination optical apparatus according to claim 20, wherein the optical integrator is an optical integrator of wavefront splitting type.
  • 28. The illumination optical apparatus according to claim 20, further comprising an optical system arranged in the optical path between the optical member and the optical integrator, the optical system forming a conjugated position relative to the pupil plane in combination with the optical integrator.
  • 29. The illumination optical apparatus according to claim 28, wherein the optical system comprises a lens system of which a rear focal plane is substantially arranged at an entrance surface of the optical integrator, and wherein the optical member is arranged so that the optical member and a front focal plane of the lens system are substantially conjugate with each other.
  • 30. The illumination optical apparatus according to claim 28, wherein the optical system comprises a first lens system and a second lens system, the first lens system being arranged between the optical member and the optical integrator so as to form an intermediate conjugated position substantially conjugate with the optical member, the second lens system being arranged between the intermediate conjugated position and the optical integrator so that the intermediate conjugated position and an entrance surface of the optical integrator are substantially in the relation of Fourier transform.
Priority Claims (1)
Number Date Country Kind
2003-390674 Nov 2003 JP national
CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation of application Ser. No. 12/320,465, filed Jan. 27, 2009, which is a continuation of application Ser. No. 11/319,057, filed Dec. 28, 2005, which is a continuation-in-part application of Application No. PCT/JP2004/016247, filed on Nov. 2, 2004. The disclosures of the prior applications are hereby incorporated by reference herein in their entirety.

US Referenced Citations (283)
Number Name Date Kind
3146294 Koester et al. Aug 1964 A
3180216 Osterberg Apr 1965 A
3758201 MacNeille Sep 1973 A
3892469 Lotspeich Jul 1975 A
3892470 Lotspeich Jul 1975 A
4103260 Buchman Jul 1978 A
4175830 Marié Nov 1979 A
4198123 Kremen Apr 1980 A
4211471 Marie Jul 1980 A
4286843 Reytblatt Sep 1981 A
4346164 Tabarelli et al. Aug 1982 A
4370026 Dubroeucq et al. Jan 1983 A
4744615 Fan et al. May 1988 A
4755027 Schäfer Jul 1988 A
4952815 Nishi Aug 1990 A
4981342 Fiala Jan 1991 A
5072126 Progler Dec 1991 A
5216541 Takesue et al. Jun 1993 A
5251222 Hester et al. Oct 1993 A
5253110 Ichihara et al. Oct 1993 A
5272501 Nishi et al. Dec 1993 A
5312513 Florence et al. May 1994 A
5345292 Shiozawa et al. Sep 1994 A
5348837 Fukuda et al. Sep 1994 A
5365371 Kamon Nov 1994 A
5382999 Kamon Jan 1995 A
5436761 Kamon Jul 1995 A
5448336 Shiraishi Sep 1995 A
5459000 Unno Oct 1995 A
5467166 Shiraishi Nov 1995 A
5473465 Ye Dec 1995 A
5541026 Matsumoto Jul 1996 A
5559583 Tanabe Sep 1996 A
5610683 Takahashi Mar 1997 A
5610684 Shiraishi Mar 1997 A
5621498 Inoue et al. Apr 1997 A
5627626 Inoue et al. May 1997 A
5631721 Stanton et al. May 1997 A
5663785 Kirk et al. Sep 1997 A
5673103 Inoue et al. Sep 1997 A
5675401 Wangler et al. Oct 1997 A
5677755 Oshida et al. Oct 1997 A
5677757 Taniguchi et al. Oct 1997 A
5684567 Shiozawa Nov 1997 A
5691803 Song et al. Nov 1997 A
5707501 Inoue et al. Jan 1998 A
5739898 Ozawa et al. Apr 1998 A
5841500 Patel Nov 1998 A
5933219 Unno Aug 1999 A
5969441 Loopstra et al. Oct 1999 A
6031658 Riza Feb 2000 A
6191829 Hashimoto Feb 2001 B1
6191880 Schuster Feb 2001 B1
6208407 Loopstra Mar 2001 B1
6211944 Shiraishi Apr 2001 B1
6229647 Takahashi et al. May 2001 B1
6233041 Shiraishi May 2001 B1
6238063 Tanitsu et al. May 2001 B1
6252647 Shiraishi Jun 2001 B1
6252712 Fürter et al. Jun 2001 B1
6259512 Mizouchi Jul 2001 B1
6304317 Taniguchi et al. Oct 2001 B1
6333776 Taniguchi et al. Dec 2001 B1
6341007 Nishi et al. Jan 2002 B1
6361909 Gau et al. Mar 2002 B1
6366404 Hiraiwa et al. Apr 2002 B1
6373614 Miller Apr 2002 B1
6392800 Schuster May 2002 B2
6400441 Nishi et al. Jun 2002 B1
6404482 Shiraishi Jun 2002 B1
6406148 Marshall et al. Jun 2002 B1
6452662 Mulkens et al. Sep 2002 B2
6466303 Omura et al. Oct 2002 B1
6483573 Schuster Nov 2002 B1
6498869 Yao Dec 2002 B1
6522483 Kreuzer Feb 2003 B2
6535273 Maul Mar 2003 B1
6538247 Iizuka Mar 2003 B2
6549269 Nishi et al. Apr 2003 B1
6577379 Boettiger et al. Jun 2003 B1
6583931 Hiraiwa et al. Jun 2003 B2
6590634 Nishi et al. Jul 2003 B1
6597430 Nishi et al. Jul 2003 B1
6606144 Omura Aug 2003 B1
6636295 Shiozawa Oct 2003 B2
6646690 Takezawa Nov 2003 B1
6661499 Omura et al. Dec 2003 B2
6665119 Kurtz et al. Dec 2003 B1
6674513 Omura Jan 2004 B2
6674514 Shinoda Jan 2004 B2
6680798 Kreuzer Jan 2004 B2
6698891 Kato Mar 2004 B2
6710855 Shiraishi Mar 2004 B2
6762824 Mori Jul 2004 B2
6769273 Nakagawa et al. Aug 2004 B1
6771350 Nishinaga Aug 2004 B2
6774984 Gerhard Aug 2004 B2
6831731 Omura et al. Dec 2004 B2
6836365 Goto Dec 2004 B2
6836380 Kreuzer Dec 2004 B2
6842223 Tyminski Jan 2005 B2
6844982 Omura Jan 2005 B2
6856379 Schuster Feb 2005 B2
6864961 Omura Mar 2005 B2
6870668 Ozawa Mar 2005 B2
6876437 Kawahara Apr 2005 B2
6885493 Ljungblad et al. Apr 2005 B2
6891655 Grebinski et al. May 2005 B2
6900915 Nanjyo et al. May 2005 B2
6913373 Tanaka et al. Jul 2005 B2
6934009 Terashi Aug 2005 B2
6958806 Mulder et al. Oct 2005 B2
6965484 Shaver Nov 2005 B2
6970233 Blatchford Nov 2005 B2
6977718 LaFontaine Dec 2005 B1
6999157 Kohno Feb 2006 B2
7009686 Kawashima et al. Mar 2006 B2
7031077 Kreuzer Apr 2006 B2
7038763 Mulder et al. May 2006 B2
7061583 Mulkens et al. Jun 2006 B2
7095546 Mala et al. Aug 2006 B2
7098992 Ohtsuki et al. Aug 2006 B2
7145720 Krähmer et al. Dec 2006 B2
7217503 Saitoh et al. May 2007 B2
7239446 Kreuzer Jul 2007 B2
7245353 Mulkens et al. Jul 2007 B2
7245355 Mulkens et al. Jul 2007 B2
7295286 Matsuura Nov 2007 B2
7345740 Wagner et al. Mar 2008 B2
7408616 Gruner et al. Aug 2008 B2
7433046 Everett et al. Oct 2008 B2
7446858 Kudo et al. Nov 2008 B2
7508493 Takeuchi et al. Mar 2009 B2
7847921 Gruner et al. Dec 2010 B2
8259393 Fiolka et al. Sep 2012 B2
8270077 Fiolka et al. Sep 2012 B2
8279524 Fiolka et al. Oct 2012 B2
8289623 Fiolka et al. Oct 2012 B2
8320043 Fiolka et al. Nov 2012 B2
9140992 Shiraishi Sep 2015 B2
9146474 Kudo et al. Sep 2015 B2
9164209 Toyoda Oct 2015 B2
9423697 Shiraishi Aug 2016 B2
9423698 Shiraishi Aug 2016 B2
9760014 Shiraishi Sep 2017 B2
9885872 Toyoda Feb 2018 B2
20010012154 Schuster Aug 2001 A1
20010019404 Schuster et al. Sep 2001 A1
20010035942 Hara et al. Nov 2001 A1
20010046038 Mulkens et al. Nov 2001 A1
20010052968 Shiozawa Dec 2001 A1
20020001134 Shinoda Jan 2002 A1
20020008863 Taniguchi et al. Jan 2002 A1
20020024008 Iizuka Feb 2002 A1
20020027719 Kreuzer Mar 2002 A1
20020080338 Taniguchi et al. Jun 2002 A1
20020085176 Hiraiwa et al. Jul 2002 A1
20020085276 Tanitsu et al. Jul 2002 A1
20020101572 Shiraishi Aug 2002 A1
20020126380 Schuster Sep 2002 A1
20020152452 Socha Oct 2002 A1
20020167653 Mulkens et al. Nov 2002 A1
20020176166 Schuster Nov 2002 A1
20020177048 Saitoh et al. Nov 2002 A1
20020177054 Saitoh et al. Nov 2002 A1
20020186462 Gerhard Dec 2002 A1
20020191288 Gruner et al. Dec 2002 A1
20020196416 Shiraishi Dec 2002 A1
20020196629 Terashi Dec 2002 A1
20030007158 Hill Jan 2003 A1
20030011756 Omura et al. Jan 2003 A1
20030025890 Nishinaga Feb 2003 A1
20030038225 Mulder et al. Feb 2003 A1
20030038931 Toyoda et al. Feb 2003 A1
20030043356 Shiraishi Mar 2003 A1
20030053036 Fujishima et al. Mar 2003 A1
20030086071 McGuire, Jr. May 2003 A1
20030098959 Hagiwara et al. May 2003 A1
20030103196 Hirukawa Jun 2003 A1
20030128349 Unno Jul 2003 A1
20030133099 Shiode Jul 2003 A1
20030160949 Komatsuda et al. Aug 2003 A1
20030174400 Patel et al. Sep 2003 A1
20030206289 Matsuyama Nov 2003 A1
20030214571 Ishikawa et al. Nov 2003 A1
20030227607 Kato et al. Dec 2003 A1
20040004771 Omura Jan 2004 A1
20040012764 Mulder et al. Jan 2004 A1
20040053148 Morohoshi Mar 2004 A1
20040057034 Zinn et al. Mar 2004 A1
20040057036 Kawashima et al. Mar 2004 A1
20040100629 Stokowski et al. May 2004 A1
20040104654 Lee et al. Jun 2004 A1
20040119954 Kawashima et al. Jun 2004 A1
20040120044 Kreuzer Jun 2004 A1
20040150806 Brunotte et al. Aug 2004 A1
20040160582 Lof et al. Aug 2004 A1
20040169924 Flagello et al. Sep 2004 A1
20040174512 Toyoda et al. Sep 2004 A1
20040180278 Sato et al. Sep 2004 A1
20040184019 Totzeck et al. Sep 2004 A1
20040207386 Durr Oct 2004 A1
20040227923 Flagello et al. Nov 2004 A1
20040240073 Gerhard Dec 2004 A1
20050024612 Hirukawa et al. Feb 2005 A1
20050041232 Yamada et al. Feb 2005 A1
20050094268 Fiolka et al. May 2005 A1
20050095749 Krellmann et al. May 2005 A1
20050122499 Omura et al. Jun 2005 A1
20050128458 Blatchford Jun 2005 A1
20050134825 Schuster Jun 2005 A1
20050146704 Gruner et al. Jul 2005 A1
20050168790 Latypov et al. Aug 2005 A1
20050237509 Blatchford Oct 2005 A1
20050237527 Mori Oct 2005 A1
20050264885 Albert Dec 2005 A1
20050270608 Shiozawa et al. Dec 2005 A1
20060012769 Suzuki Jan 2006 A1
20060050261 Brotsack Mar 2006 A1
20060055834 Tanitsu et al. Mar 2006 A1
20060055909 Fiolka et al. Mar 2006 A1
20060072095 Kudo et al. Apr 2006 A1
20060077370 Mulkens et al. Apr 2006 A1
20060092398 McCarthy May 2006 A1
20060132748 Fukuhara Jun 2006 A1
20060139611 Wagner et al. Jun 2006 A1
20060146384 Schultz et al. Jul 2006 A1
20060158624 Toyoda Jul 2006 A1
20060164711 Govil et al. Jul 2006 A1
20060170901 Tanitsu et al. Aug 2006 A1
20060171138 Muramatsu et al. Aug 2006 A1
20060203214 Shiraishi Sep 2006 A1
20060203341 Schuster Sep 2006 A1
20060232841 Toishi et al. Oct 2006 A1
20060291057 Fiolka et al. Dec 2006 A1
20070008511 De Boeij et al. Jan 2007 A1
20070019179 Fiolka et al. Jan 2007 A1
20070058151 Eurlings et al. Mar 2007 A1
20070081114 Fiolka et al. Apr 2007 A1
20070146676 Tanitsu et al. Jun 2007 A1
20070183017 Hembd Aug 2007 A1
20070201338 Yaoita et al. Aug 2007 A1
20070263199 Fiolka et al. Nov 2007 A1
20070296936 Kato et al. Dec 2007 A1
20070296941 Omura Dec 2007 A1
20080021948 Wilson et al. Jan 2008 A1
20080024747 Kudo et al. Jan 2008 A1
20080030706 Yamamoto Feb 2008 A1
20080030707 Tanaka et al. Feb 2008 A1
20080068572 Kudo et al. Mar 2008 A1
20080316459 Fiolka et al. Dec 2008 A1
20080316598 Fiolka et al. Dec 2008 A1
20090002675 Fiolka et al. Jan 2009 A1
20090073411 Tanitsu Mar 2009 A1
20090073414 Tanitsu et al. Mar 2009 A1
20090073441 Tanitsu et al. Mar 2009 A1
20090091730 Tanaka Apr 2009 A1
20090097007 Tanaka Apr 2009 A1
20090109417 Tanitsu Apr 2009 A1
20090116093 Tanitsu May 2009 A1
20090122292 Shiraishi May 2009 A1
20090128886 Hirota May 2009 A1
20090147233 Toyoda Jun 2009 A1
20090147234 Toyoda Jun 2009 A1
20090147235 Toyoda Jun 2009 A1
20090185154 Tanitsu Jul 2009 A1
20090185156 Kudo et al. Jul 2009 A1
20090284729 Shiraishi Nov 2009 A1
20090316132 Tanitsu et al. Dec 2009 A1
20090323041 Toyoda Dec 2009 A1
20100141921 Omura Jun 2010 A1
20100141926 Omura Jun 2010 A1
20100142051 Omura Jun 2010 A1
20110037962 Tanitsu Feb 2011 A1
20110069296 Gruner et al. Mar 2011 A1
20110188019 Fiolka et al. Aug 2011 A1
20110205519 Kanayamaya et al. Aug 2011 A1
20110273692 Toyoda Nov 2011 A1
20110273693 Toyoda Nov 2011 A1
20110273697 Tanitsu et al. Nov 2011 A1
20110273698 Toyoda Nov 2011 A1
20110299055 Toyoda Dec 2011 A1
20170248853 Kudo et al. Aug 2017 A1
Foreign Referenced Citations (941)
Number Date Country
1453645 Nov 2003 CN
1501175 Jun 2004 CN
1573571 Feb 2005 CN
206 607 Feb 1984 DE
221 563 Apr 1985 DE
224 448 Jul 1985 DE
242 880 Feb 1987 DE
100 29 938 Jul 2001 DE
101 23 725 Nov 2002 DE
102 06 061 Sep 2003 DE
103 43 333 Apr 2005 DE
10 2006 015213 Oct 2007 DE
0 023 231 Feb 1981 EP
0 208 552 Jan 1987 EP
0 230 931 Aug 1987 EP
0 564 264 Oct 1993 EP
0 656 555 Jun 1995 EP
0 744 664 Nov 1996 EP
0 764 858 Mar 1997 EP
0 779 530 Jun 1997 EP
0 937 999 Aug 1999 EP
1 014 196 Jun 2000 EP
1 071 292 Jan 2001 EP
1069600 Jan 2001 EP
1 109 067 Jun 2001 EP
1 139 521 Oct 2001 EP
1 211 561 Jun 2002 EP
1 260 849 Nov 2002 EP
1 280 007 Jan 2003 EP
1 489 462 Dec 2004 EP
1 577 709 Sep 2005 EP
1 662 553 May 2006 EP
1 674 935 Jun 2006 EP
1 681 710 Jul 2006 EP
1 693 885 Aug 2006 EP
1 798 758 Jun 2007 EP
1 840 945 Oct 2007 EP
1 953 805 Aug 2008 EP
2 474 708 Jul 1981 FR
856621 Dec 1960 GB
A-05-109601 Apr 1993 JE
A-44-4993 Feb 1969 JP
A-56-6666 Jan 1981 JP
A-57-117238 Jul 1982 JP
A-57-152129 Sep 1982 JP
A-57-153433 Sep 1982 JP
A-58-49932 Mar 1983 JP
U-58-45502 Mar 1983 JP
A-58-115945 Jul 1983 JP
A-58-202448 Nov 1983 JP
A-59-19912 Feb 1984 JP
A-59-155843 Sep 1984 JP
A-59-226317 Dec 1984 JP
A-61-44429 Mar 1986 JP
A-61-45923 Mar 1986 JP
A-61-91662 May 1986 JP
A-61-091662 May 1986 JP
U-61-94342 Jun 1986 JP
A-61-156736 Jul 1986 JP
A-61-196532 Aug 1986 JP
A-61-217434 Sep 1986 JP
A-61-251025 Nov 1986 JP
A-61-270049 Nov 1986 JP
A-62-2539 Jan 1987 JP
A-62-2540 Jan 1987 JP
A-62-17705 Jan 1987 JP
A-62-65326 Mar 1987 JP
A-62-100161 May 1987 JP
A-62-120026 Jun 1987 JP
A-62-121417 Jun 1987 JP
A-62-122215 Jun 1987 JP
A-62-153710 Jul 1987 JP
A-62-183522 Aug 1987 JP
A-62-188316 Aug 1987 JP
A-62-203526 Sep 1987 JP
A-62-265722 Nov 1987 JP
A-63-12134 Jan 1988 JP
A-63-36526 Feb 1988 JP
A-63-73628 Apr 1988 JP
A-63-128713 Jun 1988 JP
A-63-131008 Jun 1988 JP
A-63-141313 Jun 1988 JP
A-63-157419 Jun 1988 JP
A-63-160192 Jul 1988 JP
A-63-231217 Sep 1988 JP
A-63-275912 Nov 1988 JP
A-63-292005 Nov 1988 JP
A-64-18002 Jan 1989 JP
A-64-26704 Feb 1989 JP
A-64-68926 Mar 1989 JP
A-1-91419 Apr 1989 JP
A-1-115033 May 1989 JP
A-1-147516 Jun 1989 JP
A-1-202833 Aug 1989 JP
A-1-214042 Aug 1989 JP
U-1-127379 Aug 1989 JP
A-1-255404 Oct 1989 JP
A-1-258550 Oct 1989 JP
A-1-276043 Nov 1989 JP
A-1-278240 Nov 1989 JP
A-1-286478 Nov 1989 JP
A-1-292343 Nov 1989 JP
A-1-314247 Dec 1989 JP
A-1-319964 Dec 1989 JP
A-2-42382 Feb 1990 JP
A-2-65149 Mar 1990 JP
A-2-65222 Mar 1990 JP
A-2-97239 Apr 1990 JP
A-2-106917 Apr 1990 JP
A-2-116115 Apr 1990 JP
A-2-139146 May 1990 JP
A-2-166717 Jun 1990 JP
A-2-261073 Oct 1990 JP
A-2-264901 Oct 1990 JP
A-02-285320 Nov 1990 JP
A-2-285320 Nov 1990 JP
A-2-287308 Nov 1990 JP
A-2-298431 Dec 1990 JP
A-2-311237 Dec 1990 JP
A-3-41399 Feb 1991 JP
A-3-64811 Mar 1991 JP
A-3-72298 Mar 1991 JP
A-3-94445 Apr 1991 JP
A-3-132663 Jun 1991 JP
A-3-134341 Jun 1991 JP
A-3-167419 Jul 1991 JP
A-3-168640 Jul 1991 JP
A-3-211812 Sep 1991 JP
A-3-263810 Nov 1991 JP
A-4-11613 Jan 1992 JP
A-4-32154 Feb 1992 JP
A-4-065603 Mar 1992 JP
A-4-96315 Mar 1992 JP
A-04-101148 Apr 1992 JP
A-4-101148 Apr 1992 JP
A-4-130710 May 1992 JP
A-4-132909 May 1992 JP
A-4-133414 May 1992 JP
A-4-152512 May 1992 JP
A-4-179115 Jun 1992 JP
A-4-186244 Jul 1992 JP
U-4-80052 Jul 1992 JP
A-4-211110 Aug 1992 JP
A-04-225357 Aug 1992 JP
A-4-225357 Aug 1992 JP
A-4-235558 Aug 1992 JP
A-4-265805 Sep 1992 JP
A-4-273245 Sep 1992 JP
A-4-273427 Sep 1992 JP
A-4-280619 Oct 1992 JP
A-4-282539 Oct 1992 JP
A-4-296092 Oct 1992 JP
A-4-297030 Oct 1992 JP
A-4-305915 Oct 1992 JP
A-4-305917 Oct 1992 JP
U-4-117212 Oct 1992 JP
A-4-330961 Nov 1992 JP
A-4-343307 Nov 1992 JP
A-4-350925 Dec 1992 JP
A-5-21314 Jan 1993 JP
A-5-45886 Feb 1993 JP
A-5-62877 Mar 1993 JP
A-5-90128 Apr 1993 JP
A-05-090128 Apr 1993 JP
A-5-109601 Apr 1993 JP
A-5-127086 May 1993 JP
A-5-129184 May 1993 JP
A-5-134230 May 1993 JP
A-5-160002 Jun 1993 JP
A-05-160002 Jun 1993 JP
A-5-175098 Jul 1993 JP
A-5-199680 Aug 1993 JP
A-5-217837 Aug 1993 JP
A-05-217840 Aug 1993 JP
A-5-217840 Aug 1993 JP
A-5-226225 Sep 1993 JP
A-5-241324 Sep 1993 JP
A-5-243364 Sep 1993 JP
A-5-259069 Oct 1993 JP
A-5-283317 Oct 1993 JP
A-05-283317 Oct 1993 JP
A-5-304072 Nov 1993 JP
A-5-319774 Dec 1993 JP
A-5-323583 Dec 1993 JP
A-5-326370 Dec 1993 JP
A-6-29204 Feb 1994 JP
A-6-42918 Feb 1994 JP
A-06-053120 Feb 1994 JP
A-6-53120 Feb 1994 JP
A-06-53120 Feb 1994 JP
A-6-97269 Apr 1994 JP
A-6-104167 Apr 1994 JP
A-6-118623 Apr 1994 JP
A-6-120110 Apr 1994 JP
B2-6-29102 Apr 1994 JP
A-6-36054 May 1994 JP
A-6-124126 May 1994 JP
A-06-124872 May 1994 JP
A-6-124872 May 1994 JP
A-06-124873 May 1994 JP
A-6-124873 May 1994 JP
A-6-140306 May 1994 JP
A-6-148399 May 1994 JP
A-6-163350 Jun 1994 JP
A-06-163350 Jun 1994 JP
A-6-168866 Jun 1994 JP
A-6-177007 Jun 1994 JP
A-6-181157 Jun 1994 JP
H06-177006 Jun 1994 JP
A-6-186025 Jul 1994 JP
A-06-188169 Jul 1994 JP
A-6-188169 Jul 1994 JP
A-6-196388 Jul 1994 JP
A-06-196388 Jul 1994 JP
A-6-204113 Jul 1994 JP
A-6-204121 Jul 1994 JP
A-06-204121 Jul 1994 JP
A-6-229741 Aug 1994 JP
A-6-241720 Sep 1994 JP
A-06-244082 Sep 1994 JP
A-6-244082 Sep 1994 JP
A-06-267825 Sep 1994 JP
A-6-267825 Sep 1994 JP
A-06-281869 Oct 1994 JP
A-6-283403 Oct 1994 JP
A-06-291023 Oct 1994 JP
A-6-310399 Nov 1994 JP
A-6-325894 Nov 1994 JP
A-6-326174 Nov 1994 JP
A-6-349701 Dec 1994 JP
A-7-57992 Mar 1995 JP
A-7-057993 Mar 1995 JP
A-7-69621 Mar 1995 JP
A-7-92424 Apr 1995 JP
A-7-122469 May 1995 JP
A-7-132262 May 1995 JP
A-7-134955 May 1995 JP
A-7-135158 May 1995 JP
A-7-135165 May 1995 JP
H7-122469 May 1995 JP
A-07-147223 Jun 1995 JP
A-7-147223 Jun 1995 JP
A-7-161622 Jun 1995 JP
A-7-167998 Jul 1995 JP
A-7-168286 Jul 1995 JP
A-7-174974 Jul 1995 JP
A-7-176468 Jul 1995 JP
A-07-183201 Jul 1995 JP
A-7-183201 Jul 1995 JP
A-7-183214 Jul 1995 JP
A-7-190741 Jul 1995 JP
H07-176476 Jul 1995 JP
A-7-201723 Aug 1995 JP
A-07-201723 Aug 1995 JP
A-7-220989 Aug 1995 JP
A-7-220990 Aug 1995 JP
A-07-220995 Aug 1995 JP
A-7-220995 Aug 1995 JP
A-7-221010 Aug 1995 JP
A-7-230945 Aug 1995 JP
A-7-239212 Sep 1995 JP
A-7-243814 Sep 1995 JP
A-7-245258 Sep 1995 JP
A-07-263315 Oct 1995 JP
A-7-263315 Oct 1995 JP
A-07-283119 Oct 1995 JP
A-7-283119 Oct 1995 JP
A-7-297272 Nov 1995 JP
A-07-307268 Nov 1995 JP
A-7-307268 Nov 1995 JP
A-7-318847 Dec 1995 JP
A-7-335748 Dec 1995 JP
A-8-10971 Jan 1996 JP
A-8-17709 Jan 1996 JP
A-8-22948 Jan 1996 JP
A-8-37149 Feb 1996 JP
A-8-37227 Feb 1996 JP
A-8-46751 Feb 1996 JP
A-8-63231 Mar 1996 JP
A-8-115868 May 1996 JP
A-8-136475 May 1996 JP
A-8-151220 Jun 1996 JP
A-8-162397 Jun 1996 JP
A-8-166475 Jun 1996 JP
A-8-171054 Jul 1996 JP
A-8-195375 Jul 1996 JP
A-8-203803 Aug 1996 JP
A-8-279549 Oct 1996 JP
A-8-288213 Nov 1996 JP
A-8-297699 Nov 1996 JP
A-8-316125 Nov 1996 JP
A-8-316133 Nov 1996 JP
A-8-330224 Dec 1996 JP
A-8-334695 Dec 1996 JP
A-8-335552 Dec 1996 JP
A-08-335552 Dec 1996 JP
A-9-7933 Jan 1997 JP
A-9-15834 Jan 1997 JP
A-9-22121 Jan 1997 JP
A-9-61686 Mar 1997 JP
A-9-82626 Mar 1997 JP
A-9-83877 Mar 1997 JP
A-9-92593 Apr 1997 JP
A-9-108551 Apr 1997 JP
A-9-115794 May 1997 JP
A-9-134870 May 1997 JP
A-9-148406 Jun 1997 JP
A-9-151658 Jun 1997 JP
A-9-160004 Jun 1997 JP
A-09-160219 Jun 1997 JP
A-9-160219 Jun 1997 JP
A-9-162106 Jun 1997 JP
A-9-178415 Jul 1997 JP
A-9-184787 Jul 1997 JP
A-9-184918 Jul 1997 JP
A-09-184918 Jul 1997 JP
A-9-186082 Jul 1997 JP
A-9-190969 Jul 1997 JP
A-9-213129 Aug 1997 JP
A-09-219358 Aug 1997 JP
A-9-219358 Aug 1997 JP
A-9-227294 Sep 1997 JP
A-9-232213 Sep 1997 JP
A-9-243892 Sep 1997 JP
A-9-246672 Sep 1997 JP
A-9-251208 Sep 1997 JP
A-9-281077 Oct 1997 JP
A-9-325255 Dec 1997 JP
A-9-326338 Dec 1997 JP
A-10-002865 Jan 1998 JP
A-10-3039 Jan 1998 JP
A-10-20195 Jan 1998 JP
A-10-32160 Feb 1998 JP
A-10-38517 Feb 1998 JP
A-10-38812 Feb 1998 JP
A-10-55713 Feb 1998 JP
A-10-62305 Mar 1998 JP
A-10-64790 Mar 1998 JP
A-10-79337 Mar 1998 JP
A-10-82611 Mar 1998 JP
A-10-503300 Mar 1998 JP
A-10-92735 Apr 1998 JP
A-10-97969 Apr 1998 JP
A-10-104427 Apr 1998 JP
A-10-116760 May 1998 JP
A-10-116778 May 1998 JP
A-10-135099 May 1998 JP
A-H10-116779 May 1998 JP
A-H10-125572 May 1998 JP
A-H10-134028 May 1998 JP
A-10-163099 Jun 1998 JP
A-10-163302 Jun 1998 JP
A-10-169249 Jun 1998 JP
A-10-189427 Jul 1998 JP
A-10-189700 Jul 1998 JP
A-10-206714 Aug 1998 JP
A-10-208993 Aug 1998 JP
A-10-209018 Aug 1998 JP
A-10-214783 Aug 1998 JP
A-10-228661 Aug 1998 JP
A-10-255319 Sep 1998 JP
A-10-294268 Nov 1998 JP
A-10-303114 Nov 1998 JP
A-10-340846 Dec 1998 JP
A-11-3849 Jan 1999 JP
A-11-3856 Jan 1999 JP
A-11-8194 Jan 1999 JP
A-11-14876 Jan 1999 JP
A-11-16816 Jan 1999 JP
A-11-40657 Feb 1999 JP
A-11-54426 Feb 1999 JP
A-11-74185 Mar 1999 JP
A-11-87237 Mar 1999 JP
A-11-111601 Apr 1999 JP
A-11-111818 Apr 1999 JP
A-11-111819 Apr 1999 JP
A-11-121328 Apr 1999 JP
A-11-135400 May 1999 JP
A-11-142556 May 1999 JP
A-11-150062 Jun 1999 JP
A-11-159571 Jun 1999 JP
A-11-162831 Jun 1999 JP
A-11-163103 Jun 1999 JP
A-11-164543 Jun 1999 JP
A-11-166990 Jun 1999 JP
A-11-98 Jul 1999 JP
A-11-176727 Jul 1999 JP
A-11-176744 Jul 1999 JP
A-11-195602 Jul 1999 JP
A-11-204390 Jul 1999 JP
A-11-204432 Jul 1999 JP
A-11-218466 Aug 1999 JP
A-11-219882 Aug 1999 JP
A-11-233434 Aug 1999 JP
A-11-238680 Aug 1999 JP
A-11-239758 Sep 1999 JP
A-11-260686 Sep 1999 JP
A-11-260791 Sep 1999 JP
A-11-264756 Sep 1999 JP
WO 9949504 Sep 1999 JP
A-11-283903 Oct 1999 JP
A-11-288879 Oct 1999 JP
A-11-307610 Nov 1999 JP
A-11-312631 Nov 1999 JP
A-11-354624 Dec 1999 JP
A-2000-3874 Jan 2000 JP
A-2000-12453 Jan 2000 JP
A-2000-21742 Jan 2000 JP
A-2000-21748 Jan 2000 JP
A-2000-29202 Jan 2000 JP
A-2000-32403 Jan 2000 JP
A-2000-36449 Feb 2000 JP
A-2000-58436 Feb 2000 JP
A-2000-58441 Feb 2000 JP
A-2000-81320 Mar 2000 JP
A-2000-92815 Mar 2000 JP
A-2000-97616 Apr 2000 JP
A-2000-106340 Apr 2000 JP
A-2000-114157 Apr 2000 JP
A-2000-121491 Apr 2000 JP
A-2000-147346 May 2000 JP
A-2000-154251 Jun 2000 JP
A-2000-180371 Jun 2000 JP
A-2000-206279 Jul 2000 JP
A-2000-208407 Jul 2000 JP
A-2000-240717 Sep 2000 JP
A-2000-243684 Sep 2000 JP
A-2000-252201 Sep 2000 JP
A-2000-283889 Oct 2000 JP
A-2000-286176 Oct 2000 JP
A-2000-311853 Nov 2000 JP
A-2000-323403 Nov 2000 JP
A-2001-7015 Jan 2001 JP
A-2001-20951 Jan 2001 JP
A-2001-23996 Jan 2001 JP
A-2001-37201 Feb 2001 JP
A-2001-44097 Feb 2001 JP
A-2001-74240 Mar 2001 JP
A-2001-83472 Mar 2001 JP
A-2001-85307 Mar 2001 JP
A-2001-97734 Apr 2001 JP
A-2001-100311 Apr 2001 JP
A-2001-110707 Apr 2001 JP
A-2001-118773 Apr 2001 JP
A-2001-135560 May 2001 JP
A-2001-144004 May 2001 JP
3180133 Jun 2001 JP
A-2001-167996 Jun 2001 JP
A-2001-176766 Jun 2001 JP
A-2001-203140 Jul 2001 JP
2001-217188 Aug 2001 JP
A-2001-218497 Aug 2001 JP
A-2001-228401 Aug 2001 JP
A-2001-228404 Aug 2001 JP
A-2001-230323 Aug 2001 JP
A-2001-242269 Sep 2001 JP
A-2001-265581 Sep 2001 JP
A-2001-267227 Sep 2001 JP
A-2001-272764 Oct 2001 JP
A-2001-274083 Oct 2001 JP
A-2001-282526 Oct 2001 JP
A-2001-284228 Oct 2001 JP
A-2001-296105 Oct 2001 JP
A-2001-297976 Oct 2001 JP
A-2001-307982 Nov 2001 JP
A-2001-307983 Nov 2001 JP
A-2001-313250 Nov 2001 JP
B2-3246615 Nov 2001 JP
A-2001-338868 Dec 2001 JP
A-2001-345262 Dec 2001 JP
A-2002-14005 Jan 2002 JP
A-2002-15978 Jan 2002 JP
A-2002-16124 Jan 2002 JP
A-2002-43213 Feb 2002 JP
A-2002-57097 Feb 2002 JP
2002-075859 Mar 2002 JP
A-2002-66428 Mar 2002 JP
A-2002-71513 Mar 2002 JP
A-2002-075816 Mar 2002 JP
A-2002-75816 Mar 2002 JP
A-2002-075835 Mar 2002 JP
A-2002-75835 Mar 2002 JP
A-2002-91922 Mar 2002 JP
A-2002-93686 Mar 2002 JP
A-2002-93690 Mar 2002 JP
A-2002-100561 Apr 2002 JP
A-2002-118058 Apr 2002 JP
A-2002-141270 May 2002 JP
A-2002-158157 May 2002 JP
A-2002-162655 Jun 2002 JP
A-2002-170495 Jun 2002 JP
A-2002-190438 Jul 2002 JP
A-2002-195912 Jul 2002 JP
A-2002-198284 Jul 2002 JP
A-2002-202221 Jul 2002 JP
A-2002-203763 Jul 2002 JP
A-2002-208562 Jul 2002 JP
A-2002-520810 Jul 2002 JP
A-2002-222754 Aug 2002 JP
A-2002-227924 Aug 2002 JP
A-2002-231619 Aug 2002 JP
A-2002-258487 Sep 2002 JP
A-2002-261004 Sep 2002 JP
A-2002-263553 Sep 2002 JP
A-2002-277742 Sep 2002 JP
A-2002-289505 Oct 2002 JP
A-2002-305140 Oct 2002 JP
A-2002-323658 Nov 2002 JP
A-2002-324743 Nov 2002 JP
A-2002-329651 Nov 2002 JP
A-2002-334836 Nov 2002 JP
2002-359176 Dec 2002 JP
A-2002-353105 Dec 2002 JP
A-2002-357715 Dec 2002 JP
A-2002-359174 Dec 2002 JP
A-2002-362737 Dec 2002 JP
A-2002-365783 Dec 2002 JP
A-2002-367523 Dec 2002 JP
A-2002-367886 Dec 2002 JP
A-2002-373849 Dec 2002 JP
A-2003-15040 Jan 2003 JP
A-2003-015314 Jan 2003 JP
A-2003-17003 Jan 2003 JP
A-2003-17404 Jan 2003 JP
A-2003-28673 Jan 2003 JP
A-2003-035822 Feb 2003 JP
A-2003-35822 Feb 2003 JP
A-2003-43223 Feb 2003 JP
A-2003-45219 Feb 2003 JP
A-2003-45712 Feb 2003 JP
A-2003-59799 Feb 2003 JP
A-2003-59803 Feb 2003 JP
A-2003-059821 Feb 2003 JP
A-2003-59821 Feb 2003 JP
A-2003-59826 Feb 2003 JP
A-2003-68600 Mar 2003 JP
A-2003-068600 Mar 2003 JP
A-2003-68604 Mar 2003 JP
A-2003-75703 Mar 2003 JP
A-2003-81654 Mar 2003 JP
A-2003-84445 Mar 2003 JP
A-2003-090978 Mar 2003 JP
A-2003-98651 Apr 2003 JP
A-2003-100597 Apr 2003 JP
A-2003-114387 Apr 2003 JP
A-2003-124095 Apr 2003 JP
A-2003-130132 May 2003 JP
A-2003-149363 May 2003 JP
A-2003-151880 May 2003 JP
A-2003-161882 Jun 2003 JP
A-2003-163158 Jun 2003 JP
A-2003-166856 Jun 2003 JP
A2003-173957 Jun 2003 JP
A-2003-188087 Jul 2003 JP
A-2003-224961 Aug 2003 JP
A-2003-229347 Aug 2003 JP
A-2003-233001 Aug 2003 JP
A-2003-234285 Aug 2003 JP
A-2003-238577 Aug 2003 JP
A-2003-240906 Aug 2003 JP
A-2003-249443 Sep 2003 JP
A-2003-258071 Sep 2003 JP
A-2003-262501 Sep 2003 JP
A-2003-263119 Sep 2003 JP
A-2003-272837 Sep 2003 JP
A-2003-273338 Sep 2003 JP
A-2003-282423 Oct 2003 JP
A-2003-297727 Oct 2003 JP
A-2003-532281 Oct 2003 JP
A-2003-532282 Oct 2003 JP
A-2003-311923 Nov 2003 JP
A-2004-7417 Jan 2004 JP
A-2004-14642 Jan 2004 JP
A-2004-14876 Jan 2004 JP
A-2004-15187 Jan 2004 JP
A-2004-22708 Jan 2004 JP
A-2004-38247 Feb 2004 JP
A-2004-39952 Feb 2004 JP
A-2004-40039 Feb 2004 JP
A-2004-45063 Feb 2004 JP
A-2004-051717 Feb 2004 JP
A-2004-63847 Feb 2004 JP
A-2004-71851 Mar 2004 JP
A-2004-078136 Mar 2004 JP
A-2004-85612 Mar 2004 JP
A-2004-87987 Mar 2004 JP
A-2004-087987 Mar 2004 JP
A-2004-95653 Mar 2004 JP
U-3102327 Mar 2004 JP
A-2004-98012 Apr 2004 JP
A-2004-101362 Apr 2004 JP
A-2004-103674 Apr 2004 JP
A-2004-104654 Apr 2004 JP
A-2004-111569 Apr 2004 JP
A-2004-119497 Apr 2004 JP
A-2004-119717 Apr 2004 JP
A-2004-128307 Apr 2004 JP
A-2004-134682 Apr 2004 JP
A-2004-140145 May 2004 JP
A-2004-145269 May 2004 JP
A-2004-146702 May 2004 JP
A-2004-152705 May 2004 JP
A-2004-153064 May 2004 JP
A-2004-153096 May 2004 JP
A-2004-163555 Jun 2004 JP
A-2004-165249 Jun 2004 JP
A-2004-165416 Jun 2004 JP
A-2004-172471 Jun 2004 JP
A-2004-177468 Jun 2004 JP
A-2004-179172 Jun 2004 JP
A-2004-187401 Jul 2004 JP
A-2004-193252 Jul 2004 JP
A-2004-193425 Jul 2004 JP
A-2004-198748 Jul 2004 JP
A-2004-205698 Jul 2004 JP
A-2004-207696 Jul 2004 JP
A-2004-207711 Jul 2004 JP
A-2004-260115 Jul 2004 JP
A-2004-520618 Jul 2004 JP
A-2004-221253 Aug 2004 JP
A-2004-224421 Aug 2004 JP
A-2004-228497 Aug 2004 JP
A-2004-241666 Aug 2004 JP
A-2004-247527 Sep 2004 JP
A-2004-258670 Sep 2004 JP
A-2004-259828 Sep 2004 JP
A-2004-259966 Sep 2004 JP
A-2004-259985 Sep 2004 JP
A-2004-260043 Sep 2004 JP
A-2004-260081 Sep 2004 JP
A-2004-294202 Oct 2004 JP
A-2004-301825 Oct 2004 JP
A-2004-302043 Oct 2004 JP
A-2004-303808 Oct 2004 JP
A-2004-304135 Oct 2004 JP
A-2004-307264 Nov 2004 JP
A-2004-307265 Nov 2004 JP
A-2004-307266 Nov 2004 JP
A-2004-307267 Nov 2004 JP
A-2004-319724 Nov 2004 JP
A-2004-320017 Nov 2004 JP
A-2004-327660 Nov 2004 JP
A-2004-335808 Nov 2004 JP
A-2004-335864 Nov 2004 JP
A-2004-336922 Nov 2004 JP
A-2004-342987 Dec 2004 JP
A-2004-349645 Dec 2004 JP
A-2004-356410 Dec 2004 JP
2005-11990 Jan 2005 JP
A-2005-5295 Jan 2005 JP
A-2005-5395 Jan 2005 JP
A-2005-5521 Jan 2005 JP
A-2005-005521 Jan 2005 JP
A-2005-012190 Jan 2005 JP
A-2005-12228 Jan 2005 JP
A-2005-19628 Jan 2005 JP
A-2005-19864 Jan 2005 JP
A-2005-26634 Jan 2005 JP
A-2005-51147 Feb 2005 JP
A-2005-55811 Mar 2005 JP
A-2005-64210 Mar 2005 JP
A-2005-64391 Mar 2005 JP
A-2005-79222 Mar 2005 JP
A-2005-79584 Mar 2005 JP
A-2005-79587 Mar 2005 JP
A-2005-86148 Mar 2005 JP
A-2005-91023 Apr 2005 JP
A-2005-93324 Apr 2005 JP
A-2005-093522 Apr 2005 JP
A-2005-93948 Apr 2005 JP
A-2005-97057 Apr 2005 JP
A-2005-108925 Apr 2005 JP
A-2005-108934 Apr 2005 JP
A-2005-114882 Apr 2005 JP
A-2005-116570 Apr 2005 JP
A-2005-116571 Apr 2005 JP
A-2005-116831 Apr 2005 JP
A-2005-123586 May 2005 JP
A-2005-127460 May 2005 JP
A-2005-136404 May 2005 JP
A-2005050718 Jun 2005 JP
A-2005-140999 Jun 2005 JP
A-2005-150759 Jun 2005 JP
A-2005-156592 Jun 2005 JP
A-2005-166871 Jun 2005 JP
A-2005-167254 Jun 2005 JP
A-2005-175176 Jun 2005 JP
A-2005-175177 Jun 2005 JP
A-2005-191344 Jul 2005 JP
A-2005-203483 Jul 2005 JP
A-2005-209705 Aug 2005 JP
A-2005-209706 Aug 2005 JP
A-2005-524112 Aug 2005 JP
A-2005-233979 Sep 2005 JP
A-2005-234359 Sep 2005 JP
A-2005-236088 Sep 2005 JP
A-2005-243770 Sep 2005 JP
A-2005-243904 Sep 2005 JP
A-2005-251549 Sep 2005 JP
A-2005-257740 Sep 2005 JP
A-2005-259789 Sep 2005 JP
A-2005-259830 Sep 2005 JP
A-2005-268700 Sep 2005 JP
A-2005-268741 Sep 2005 JP
A-2005-268742 Sep 2005 JP
A-2005-276932 Oct 2005 JP
A-2005-302826 Oct 2005 JP
A-2005-303167 Oct 2005 JP
A-2005-311020 Nov 2005 JP
A-2005-315918 Nov 2005 JP
A-2005-340605 Dec 2005 JP
A-2005-366813 Dec 2005 JP
A-2006-1821 Jan 2006 JP
A-2006-5197 Jan 2006 JP
A-2006-17895 Jan 2006 JP
A-2006-019702 Jan 2006 JP
A-2006-19702 Jan 2006 JP
A-2006-24706 Jan 2006 JP
A-2006-24819 Jan 2006 JP
A-2006-32750 Feb 2006 JP
A-2006-41302 Feb 2006 JP
A-2006-54364 Feb 2006 JP
A-2006-73584 Mar 2006 JP
A-2006-73951 Mar 2006 JP
A-2006-80281 Mar 2006 JP
A-2006-86141 Mar 2006 JP
A-2006-86442 Mar 2006 JP
A-2006-100363 Apr 2006 JP
A-2006-100686 Apr 2006 JP
A-2006-113437 Apr 2006 JP
A-2006-513442 Apr 2006 JP
A-2006-120985 May 2006 JP
A-2006-128192 May 2006 JP
A-2006-135165 May 2006 JP
A-2006-140366 Jun 2006 JP
A-2006-170811 Jun 2006 JP
A-2006-170899 Jun 2006 JP
A-2006-177865 Jul 2006 JP
A-2006-184414 Jul 2006 JP
A-2006-194665 Jul 2006 JP
A-2006-250587 Sep 2006 JP
A-2006-253572 Sep 2006 JP
A-2006-269762 Oct 2006 JP
A-2006-278820 Oct 2006 JP
A-2006-289684 Oct 2006 JP
A-2006-524349 Oct 2006 JP
A-2006-332355 Dec 2006 JP
A-2006-349946 Dec 2006 JP
A-2006-351586 Dec 2006 JP
A-2007-5830 Jan 2007 JP
A-2007-43980 Feb 2007 JP
A-2007-48819 Feb 2007 JP
A-2007-51300 Mar 2007 JP
A-2007-87306 Apr 2007 JP
A-2007-93546 Apr 2007 JP
A-2007-103153 Apr 2007 JP
A-2007-113939 May 2007 JP
A-2007-119851 May 2007 JP
A-2007-120333 May 2007 JP
A-2007-120334 May 2007 JP
A-2007-142313 Jun 2007 JP
A-2007-144864 Jun 2007 JP
A-2007-515768 Jun 2007 JP
A-2007-170938 Jul 2007 JP
A-2007-187649 Jul 2007 JP
A-2007-207821 Aug 2007 JP
A-2007-227637 Sep 2007 JP
A-2007-235041 Sep 2007 JP
A-2007-527549 Sep 2007 JP
A-2007-274881 Oct 2007 JP
A-2007-280623 Oct 2007 JP
A-2007-295702 Nov 2007 JP
A-2008-3740 Jan 2008 JP
A-2008-58580 Mar 2008 JP
A-2008-64924 Mar 2008 JP
A-2008-103737 May 2008 JP
A-2008-180492 Aug 2008 JP
A-2009-17540 Jan 2009 JP
A-2009-60339 Mar 2009 JP
A-2010-514716 May 2010 JP
A-2001-304332 Oct 2010 JP
A-2010-226117 Oct 2010 JP
B2-4582096 Nov 2010 JP
B2-4747844 Aug 2011 JP
A-2011-233911 Nov 2011 JP
B2-4976015 Jul 2012 JP
B2-4976094 Jul 2012 JP
2003068607 Apr 2015 JP
1995-0009365 Apr 1995 KR
10-1997-0016641 Apr 1997 KR
10-2011-0036050 Apr 1997 KR
2000-0048227 Jul 2000 KR
2000-0076783 Dec 2000 KR
2001-0051438 Jun 2001 KR
A-2001-0053240 Jun 2001 KR
2002-0042462 Jun 2002 KR
10-2003-0036105 May 2003 KR
10-0474578 Jun 2005 KR
10-2006-0132598 Dec 2006 KR
10-839686 Jun 2008 KR
10-0869390 Nov 2008 KR
10-2010-0061551 Jun 2010 KR
10-1020378 Mar 2011 KR
10-1020455 Mar 2011 KR
480585 Mar 2002 TW
516097 Jan 2003 TW
518662 Jan 2003 TW
200301848 Jul 2003 TW
094100817 Aug 2005 TW
WO 9711411 Mar 1997 WO
WO 9815952 Apr 1998 WO
WO 9824115 Jun 1998 WO
WO 9859364 Dec 1998 WO
WO 9923692 May 1999 WO
WO 9927568 Jun 1999 WO
WO 9931716 Jun 1999 WO
WO 9934255 Jul 1999 WO
WO 9949366 Sep 1999 WO
WO 9949504 Sep 1999 WO
WO 9950712 Oct 1999 WO
WO 9966370 Dec 1999 WO
WO 0002092 Jan 2000 WO
WO 0011706 Mar 2000 WO
WO 0067303 Nov 2000 WO
WO 0103170 Jan 2001 WO
WO 0110137 Feb 2001 WO
WO 0120733 Mar 2001 WO
WO 0122480 Mar 2001 WO
WO 0123935 Apr 2001 WO
WO 0127978 Apr 2001 WO
WO 0135451 May 2001 WO
WO 0159502 Aug 2001 WO
WO 0165296 Sep 2001 WO
WO 0181977 Nov 2001 WO
WO 0216993 Feb 2002 WO
WO 02063664 Aug 2002 WO
WO 02069049 Sep 2002 WO
WO 02080185 Oct 2002 WO
WO 02084720 Oct 2002 WO
WO 02084850 Oct 2002 WO
WO 02093209 Nov 2002 WO
WO 02101804 Dec 2002 WO
WO 03003429 Jan 2003 WO
WO 03023832 Mar 2003 WO
WO 03063212 Jul 2003 WO
WO 03077036 Sep 2003 WO
WO 03085708 Oct 2003 WO
WO 2004051717 Jun 2004 WO
WO 2004053596 Jun 2004 WO
WO 2004053950 Jun 2004 WO
WO 2004053951 Jun 2004 WO
WO 2004053952 Jun 2004 WO
WO 2004053953 Jun 2004 WO
WO 2004053954 Jun 2004 WO
WO 2004053955 Jun 2004 WO
WO 2004053956 Jun 2004 WO
WO 2004053957 Jun 2004 WO
WO 2004053958 Jun 2004 WO
WO 2004053959 Jun 2004 WO
WO 2004071070 Aug 2004 WO
WO 2004086468 Oct 2004 WO
WO 2004086470 Oct 2004 WO
WO 2004090956 Oct 2004 WO
WO 2004091079 Oct 2004 WO
WO 2004094940 Nov 2004 WO
WO 2004104654 Dec 2004 WO
WO 2004105106 Dec 2004 WO
WO 2004105107 Dec 2004 WO
WO 2004107048 Dec 2004 WO
WO 2004107417 Dec 2004 WO
WO 2004109780 Dec 2004 WO
WO 2004114380 Dec 2004 WO
WO 2005006415 Jan 2005 WO
WO 2005006418 Jan 2005 WO
WO 2005008754 Jan 2005 WO
WO 2005022615 Mar 2005 WO
WO 2005026843 Mar 2005 WO
WO 2005027207 Mar 2005 WO
WO 2005029559 Mar 2005 WO
WO 2005031467 Apr 2005 WO
WO 2005036619 Apr 2005 WO
WO 2005036620 Apr 2005 WO
WO 2005036622 Apr 2005 WO
WO 2005036623 Apr 2005 WO
WO 2005041276 May 2005 WO
WO 2005041277 May 2005 WO
WO 2005048325 May 2005 WO
WO 2005048326 May 2005 WO
WO 2005050718 Jun 2005 WO
WO 2005050718 Jun 2005 WO
WO 2005057636 Jun 2005 WO
WO 2005067013 Jul 2005 WO
WO 2005069081 Jul 2005 WO
WO 2005071671 Aug 2005 WO
WO 2005071717 Aug 2005 WO
WO2005076045 Aug 2005 WO
WO 2005076321 Aug 2005 WO
WO 2005076323 Aug 2005 WO
WO 2005081291 Sep 2005 WO
WO 2005081292 Sep 2005 WO
WO 2005104195 Nov 2005 WO
WO 2006006730 Jan 2006 WO
WO 2006016551 Feb 2006 WO
WO 2006019124 Feb 2006 WO
WO 2006025341 Mar 2006 WO
WO 2006028188 Mar 2006 WO
WO 2006030727 Mar 2006 WO
WO 2006030910 Mar 2006 WO
WO 2006-035775 Apr 2006 WO
WO 2006049134 May 2006 WO
WO 2006051909 May 2006 WO
WO 2006064851 Jun 2006 WO
WO 2006068233 Jun 2006 WO
WO 2006077958 Jul 2006 WO
WO 2006080285 Aug 2006 WO
WO 2006085524 Aug 2006 WO
WO 2006100889 Sep 2006 WO
WO 2006118108 Nov 2006 WO
WO 2007003563 Jan 2007 WO
WO 2007018127 Feb 2007 WO
WO 2007055120 May 2007 WO
WO 2007055237 May 2007 WO
WO 2007055373 May 2007 WO
WO 2007066692 Jun 2007 WO
WO 2007066758 Jun 2007 WO
WO 2007097198 Aug 2007 WO
WO 2007132862 Nov 2007 WO
WO 2007141997 Dec 2007 WO
WO 2008041575 Apr 2008 WO
WO 2008059748 May 2008 WO
WO 2008061681 May 2008 WO
WO 2006343023 Jun 2008 WO
WO 2008065977 Jun 2008 WO
WO 2008074673 Jun 2008 WO
WO 2008075613 Jun 2008 WO
WO 2008078688 Jul 2008 WO
WO 2008090975 Jul 2008 WO
WO 2008139848 Nov 2008 WO
WO 2009153925 Dec 2009 WO
WO 2009157154 Dec 2009 WO
WO 2010001537 Jan 2010 WO
Non-Patent Literature Citations (556)
Entry
Jun. 15, 2011 Notice of Allowance issued in U.S. Appl. No. 12/289,518.
Apr. 20, 2011 Office Action issued in Chinese Patent Application No. 200710110949.7 (with English Translation).
Apr. 25, 2011 Office Action issued in Korean Patent Application No. 10-2010-7008438 (with English Translation).
Apr. 26, 2011 Office Action issued in Chinese Patent Application No. 200710110950.X (with English Translation).
Apr. 28, 2011 Office Action issued in Korean Patent Application No. 10-2010-7001898 (with English Translation).
Apr. 28, 2011 Office Action issued in Korean Patent Application No. 10-2006-7012265 (with English Translation).
Apr. 28, 2011 Office Action issued in Korean Patent Application No. 10-2009-7023904 (with English Translation).
Apr. 28, 2011 Office Action issued in Korean Patent Application No. 10-2010-7001907 (with English Translation).
May 11, 2011 Office Action issued in European Patent Application No. 04724369.6.
May 18, 2011 International Search Report issued in PCT/JP2011/053588.
Apr. 8, 2011 Office Action issued in Chinese Patent Application No. 200810211496.1 (with English Translation).
Apr. 25, 2011 Office Action issued in Korean Patent Application No. 10-2011-7001502 (with English Translation).
Apr. 26, 2011 Office Action issued in Chinese Patent Application No. 200710110951.4 (with English Translation).
May 3, 2011 International Search Report issued in PCT/JP2011/053595.
May 24, 2011 Office Action issued in U.S. Appl. No. 12/382,277.
Jun. 9, 2011 Office Action issued in U.S. Appl. No. 11/902,277.
Jun. 10, 2011 Office Action issued in U.S. Appl. No. 12/289,515.
Mar. 23, 2011 Office Action issued in Chinese Patent Application No. 200910173718.X (with English Translation).
Mar. 31, 2011 Notice of Allowance issued in U.S. Appl. No. 11/410,952.
Apr. 6, 2011 Office Action issued in Taiwanese Patent Application No. 093131323 (with English Translation).
Feb. 15, 2011 Office Action issued in European Patent Application No. 05703646.9.
305 Feb. 24, 2011 Office Action issued in Chinese Patent Application No. 200910173717.5 (with English Translation).
Feb. 28, 2011 Office Action issued in Korean Patent Application No. 10-2010-7008441 (with English Translation).
Mar. 8, 2011 Office Action issued in Chinese Patent Application No. 200910173716.0 (with English Translation).
Mar. 29, 2011 Office Action issued in Japanese Patent Application No. P2007-251263 (with English Translation).
Mar. 29, 2011 Notice of Allowance issued in Japanese Patent Application No. P2005-505207 (with English Translation).
Apr. 5, 2011 Office Action issued in Japanese Patent Application No. P2009-149426 (with English Translation).
Apr. 15, 2011 Office Action issued in European Patent Application No. 04817303.3.
Apr. 26, 2011 Office Action issued in U.S. Appl. No. 11/902,282.
Feb. 24, 2011 Office Action issued in Chinese Patent Application No. 201010128876.6 (with English Translation).
U.S. Appl. No. 12/835,860, filed Jul. 14, 2010 by Kanayamaya et al.
Dec. 1, 2009 Office Action issued in U.S. Appl. No. 11/902,277.
Jun. 25, 2008 Office Action issued in U.S. Appl. No. 11/902,277.
Apr. 15, 2009 Office Action issued in U.S. Appl. No. 11/902,277.
Jun. 25, 2008 Office Action issued in U.S. Appl. No. 11/902,282.
Feb. 9, 2009 Office Action issued in U.S. Appl. No. 11/902,282.
Dec. 14, 2009 Office Action issued in U.S. Appl. No. 11/902,282.
Jan. 25, 2010 Search Report issued in European Application No. 09015058.2.
“High NA Lithographic Imagery at Brewster's Angle” Brunner, Timothy A., et al. SPIE (U.S.A.), vol. 4691, pp. 1-24, 2002.
Mar. 21, 2008 Office Action issued in Chinese Application No. 2004800341246 (with translation).
Oct. 29, 2009 Office Action issued in U.S. Appl. No. 12/289,515.
Feb. 26, 2009 Office Action in U.S. Appl. No. 11/347,421.
Jan. 7, 2010 Office Action issued in U.S. Appl. No. 12/289,518.
Apr. 21, 2010 Office Action issued in U.S. Appl. No. 12/289,518.
Jan. 8, 2009 Office Action issued in U.S. Appl. No. 11/410,952.
Nov. 25, 2009 Office Action issued in U.S. Appl. No. 11/410,952.
Jun. 16, 2010 Office Action issued in U.S. Appl. No. 11/410,952.
Apr. 24, 2009 Office Action issued in Chinese Application No. 2006800006868 (with translation).
Jan. 28, 2010 Search Report issued in European Application No. 06711853.9.
Apr. 22, 2010 Office Action issued in Japanese Application No. 2006-553907 (with translation).
Mar. 26, 2010 Office Action issued in U.S. Appl. No. 11/902,277.
Mar. 26, 2010 Office Action issued in U.S. Appl. No. 11/902,282.
Jan. 6, 2011 Office Action issued in U.S. Appl. No. 11/902,282.
Jan. 24, 2011 Office Action issued in Korean Application No. 2009-7010158 (with translation).
Jan. 24, 2011 Office Action issued in Korean Application No. 2005-7018973 (with translation).
Oct. 18, 2010 Office Action issued in U.S. Appl. No. 12/382,277.
Jan. 25, 2011 Office Action issued in Korean Application No. 2009-7010159 (with translation).
Feb. 1, 2011 Office Action issued in Chinese Application No. 200810126659.6 (with translation).
Feb. 1, 2011 Notice of Reasons for Rejection issued in Japanese Application No. 2006-262588 (with translation).
Feb. 1, 2011 Notice of Reasons for Rejection issued in Japanese Application No. 2006-262590 (with translation).
Feb. 1, 2011 Notice of Reasons for Rejection issued in Japanese Application No. 2005-517637 (with translation).
Nov. 30, 2010 Notice of Allowance issued in Korean Application No. 10-2008-7019082.
Jan. 14, 2011 Office Action issued in U.S. Appl. No. 12/320,480.
Jan. 14, 2011 Office Action issued in U.S. Appl. No. 12/320,468.
Nov. 30, 2010 Notice of Allowance issued in Korean Application No. 10-2008-7019081.
Dec. 7, 2010 Search Report issued in European Application No. 10012876.8.
Nov. 3, 2010 Search Report issued in European Application No. 09015058.2.
Jul. 20, 2010 Notice of Allowance issued in U.S. Appl. No. 12/289,515.
Aug. 3, 2010 Notice of Allowance issued in Japanese Application No. 2006-553907.
Nov. 12, 2010 Office Action issued in Chinese Application No. 200710110948.2 (with translation).
Oct. 8, 2010 Office Action issued in Chinese Application No. 200810126659.6 (with translation).
Oct. 26, 2010 Office Action issued in Japanese Application No. 2005-517637 (with translation).
Oct. 26, 2010 Office Action issued in Japanese Application No. 2006-262588 (with translation).
Oct. 26, 2010 Office Action issued in Japanese Application No. 2006-262590 (with translation).
Aug. 3, 2010 Office Action issued in Japanese Application No. 2005-515570 (with translation).
Feb. 15, 2011 Office Action issued in U.S. Appl. No. 11/902,277.
Jul. 3, 2008 Office Action issued in U.S. Appl. No. 11/319,057.
Feb. 26, 2009 Office Action issued in U.S. Appl. No. 11/319,057.
Jan. 14, 2011 Office Action issued in U.S. Appl. No. 12/461,852.
Oct. 4, 2010 International Search Report issued in International Application No. PCT/JP2010/061300.
Oct. 4, 2010 Written Opinion of the International Searching Authority issued in International Application No. PCT/JP2010/061300.
Jan. 11, 2011 Office Action issued in U.S. Appl. No. 12/461,801.
Aug. 3, 2010 Office Action issued in Japanese Application No. 2006-262589 (with translation).
Jul. 12, 2010 Office Action issued in U.S. Appl. No. 12/461,801.
Sep. 15, 2008 Office Action issued in U.S. Appl. No. 11/644,966.
Jun. 25, 2009 Office Action issued in U.S. Appl. No. 11/644,966.
Apr. 15, 2010 Office Action issued in U.S. Appl. No. 10/587,254.
Sep. 27, 2010 Office Action issued in U.S. Appl. No. 10/587,254.
Levinson, Harry J., “Principles of Lithography,” Bellingham, WA: SPIE Press, 2001, pp. 205-206.
Jan. 26, 2011 Office Action issued in Chinese Application No. 200910173715.6 (with translation).
Feb. 23, 2010 Office Action issued in Japanese Application No. 2006-262589 (with translation).
Feb. 23, 2010 Office Action issued in Japanese Application No. 2005-515570 (with translation).
May 14, 2008 International Preliminary Report on Patentability issued in International Application No. PCT/JP2006/321607.
May 14, 2008 Written Opinion issued in International Application No. PCT/JP2006/321607 (with translation).
Nov. 12, 2010 Office Action issued in Chinese Application No. 200910126047.1 (with translation).
Feb. 25, 2010 Extended Search Report issued in European Application No. 06822564.8.
Jul. 20, 2010 Korean Office Action issued in Korean Patent Application No. 10-2010-7008438 with English translation.
Jul. 20, 2010 Korean Office Action issued in Korean Patent Application No. 10-2010-7008441 with English translation.
Jul. 20, 2010 Korean Office Action issued in Korean Patent Application No. 10-2010-7008444 with English translation.
Office Action issued in Chinese Patent Application No. 200810211496.1 mailed on Aug. 23, 2010 (w/English Translation).
Notice of Allowance issued in U.S. Appl. No. 11/410,952 mailed on Sep. 20, 2010.
Extended European Search Report issued in European Patent Application No. 10174843.2 on Sep. 29, 2010.
Extended European Search Report issued in European Patent Application No. 05703646.9 on Oct. 4, 2010.
Translation of Final Notice of Preliminary Rejection issued in Korean Patent Application No. 10-2008-7019081; May 31, 2010.
Translation of Preliminary Rejection issued in Korean Patent Application No. 10-2008-7019082; May 31, 2010.
Nov. 6, 2009 Office Action issued in Chinese Patent Application No. 2008102114957 (with translation).
Sep. 11, 2009 Office Action issued in Chinese Patent Application No. 2008102114976 (with translation).
Applied Optics II, pp. 166-167.
Jun. 14, 2011 Office Action issued in Korean Patent Application No. 2011-7006842 (with English Translation).
Jun. 27, 2012 Office Action issued in Korean Patent Application No. 10-2009-7010158 (with translation).
Oct. 8, 2012 Office Action issued in Chinese Patent Application No. 200910173716.0 (with translation).
Oct. 10, 2012 Office Action issued in Chinese Patent Application No. 200910173717.5 (with translation).
Sep. 4, 2012 Office Action issued in Japanese Patent Application No. 2010-087010 (with translation).
Jul. 30, 2012 Office Action issued in Korean Patent Application No. 10-2006-7018069 (with translation).
Jun. 4, 2012 Office Action issued in Chinese Patent Application No. 2007101 10950.X (with translation).
Sep. 11, 2012 Office Action issued in Taiwanese Patent Application No. 097117896 (with translation).
Oct. 26, 2012 Office Action issued in Taiwanese Patent Application No. 097117893 (with translation).
Oct. 17, 2012 Notice of Allowance issued in Korean Patent Application No. 10-2010-7001907 (with translation).
Jun. 29, 2012 Office Action issued in Chinese Patent Application No. 200910173714.1 (with translation).
Aug. 20, 2012 Notice of Allowance issued in Taiwanese Patent Application No. 097117881 (with translation).
Sep. 20, 2012 Office Action issued in European Patent Application No. 04 817 303.3.
Sep. 18, 2012 Office Action issued in Japanese Patent Application No. 2011-144669 (with translation).
Aug. 20, 2012 Written Opinion Against the Written Answer issued in Korean Patent Application No. 10-0869390 (with translation).
Aug. 20, 2012 Written Opinion Against the Written Answer issued in Korean Patent Application No. 10-0839686 (with translation).
Aug. 20, 2012 Written Opinion Against the Written Answer issued in Korean Patent Application No. 10-1020455 (with translation).
Aug. 20, 2012 Written Opinion Against the Written Answer issued in Korean Patent Application No. 10-1020378 (with translation).
Jul. 17, 2012 Office Action issued in U.S. Appl. No. 11/902,277.
Jul. 19, 2012 Office Action issued in U.S. Appl. No. 11/902,282.
Jul. 17, 2012 Office Action issued in U.S. Appl. No. 12/382,277.
Aug. 6, 2012 Office Action issued in U.S. Appl. No. 13/137,004.
Aug. 7, 2012 Office Action issued in U.S. Appl. No. 13/137,003.
Aug. 10, 2012 Office Action issued in U.S. Appl. No. 13/137,002.
Oct. 12, 2012 Office Action issued in U.S. Appl. No. 12/458,635.
Nov. 9, 2012 Office Action issued in U.S. Appl. No. 11/644,966.
Oct. 30, 2012 Office Action issued in Korean Patent Application No. 10-2012-7023534 (with translation).
Nov. 21, 2012 Office Action issued in European Patent Application No. 05703646.9.
Dec. 5, 2012 Office Action issued in Taiwanese Patent Application No. 096138500 (with translation).
Nov. 6, 2012 Written Opinion against the Written Answer issued in Korean Patent Application No. 10-839686, Appeal No. 2011Dang301 (with translation).
Nov. 6, 2012 Written Opinion against the Written Answer issued in Korean Patent Application No. 10-869390, Appeal No. 2011Dang302 (with translation).
Nov. 26, 2012 Written Opinion against the Written Answer issued in Korean Patent Application No. 10-1020455, Appeal No. 2011Dang510 (with translation).
Nov. 26, 2012 Written Opinion against the Written Answer issued in Korean Patent Application No. 10-1020378, Appeal No. 2011Dang511 (with translation).
Jan. 9, 2013 Technical Presentation Document submitted in Invalidation Trial against Korean Patent Application No. 10-839686, Appeal No. 2011Dang301 (with translation).
Dec. 18, 2012 Office Action issued in Japanese Patent Application No. 2009-149426 (with translation).
Jan. 2, 2013 Office Action issued in Korean Patent Application No. 10-2007-7005320 (with translation).
Dec. 12, 2012 Notice of Allowance issued in U.S. Appl. No. 12/289,515.
Jan. 15, 2013 Notice of Allowance issued in U.S. Appl. No. 13/067,958.
Jan. 7, 2013 Office Action issued in Chinese Patent Application No. 200910173715.6 (with translation).
Jan. 14, 2013 Office Action issued in Chinese Patent Application No. 201010128876.6 (with translation).
Jan. 16, 2013 Office Action issued in Chinese Patent Application No. 200910173714.1 (with translation).
Jan. 9, 2013 Technical Presentation Document submitted in Invalidation Trial against Korean Patent Application No. 10-869390, Appeal No. 2011Dang302 (with translation).
Jan. 14, 2013 Office Action issued in Chinese Patent Application No. 200910126047.1 (with translation).
Jan. 18, 2013 Office Action issued in Chinese Patent Application No. 200810211496.1 (with translation).
Feb. 6, 2013 Written Opinion submitted in Korean Patent Application No. 10-2006-7008368 (with translation).
Feb. 6, 2013 Written Opinion submitted in Korean Patent Application No. 10-2007-7022489 (with translation).
Feb. 6, 2013 Written Opinion submitted in Korean Patent Application 10-2008-7019081 (with translation).
Feb. 6, 2013 Written Opinion submitted in Korean Patent Application No. 10-2008-7019082 (with translation).
Halliday, et al., “Fundamentals of Physics: Extended, with Modern Physics”, John Wiley & Sons, Inc., Jul. 25, 1995 (with partial translation).
Feb. 25, 2013 Office Action issued in U.S. Appl. No. 12/382,277.
Jan. 29, 2013 Written Opinion submitted in Korean Patent Application No. 10-0839686 Appeal No. 2011 Dang301 (with translation).
Jan. 29, 2013 Written Opinion submitted in Korean Patent Application No. 10-0869390 Appeal No. 2011 Dang302 (with translation).
Hecht, Optics Fourth Edition, Addison Wesley, 2002, Preface, “Polarization,” pp. 325-358, and “Diffraction,” pp. 443-485.
Hecht, Optics Second Edition, Addison Wesley 1974, “Polarization,” pp. 395-449, and “Diffraction,” pp. 573-630 (with translation).
Bass, Handbook of Optics, Fundamentals Techniques and Design, Second Edition vol. 1, McGraw-Hill, 1995, pp. 5.22-5.25.
Herzig, Micro-Optics, Elements, Systems and Applications, Taylor & Francis, 1997, pp. vii-29.
Feb. 22, 2013 Statement against the Reference Opinion in Korean Patent Application No. 102006-7008368 (with translation).
Feb. 22, 2013 Statement against the Reference Opinion in Korean Patent Application No. 10-2007-7022489 (with translation).
Feb. 22, 2013 Statement against the Reference Opinion in Korean Patent Application No. 10-2008-7019081 (with translation).
Feb. 22, 2013 Statement against the Reference Opinion in Korean Patent Application No. 10-2008-7019082 (with translation).
Jan. 30, 2013 Technical Presentation Document and Supplemental Presentation submitted in Invalidation Trial against Korean Patent Application No. 10-1020455, Appeal No. 2011 Dang510 (with translation).
Jan. 30, 2013 Technical Presentation Document and Supplemental Presentation submitted in Invalidation Trial against Korean Patent Application No. 10-1020378, Appeal No. 2011 Dang511 (with translation).
Feb. 24, 2013 Office Action issued in Korean Patent Application No. 10-2012-7034127 (with translation).
Feb. 19, 2013 Office Action issued in Japanese Patent Application No. 2010-087010 (with translation).
Feb. 19, 2013 Office Action issued in Japanese Patent Application No. 2011-138703 (with translation).
Feb. 27, 2013 Office Action issued in Korean Patent Application No. 10-2012-7034128 (with translation).
Sep. 18, 2012 Office Action issued in Chinese Patent Application No. 200910173718.X (with translation).
Sep. 18, 2012 Office Action issued in Japanese Patent Application No. 2010-094216 (with translation).
Dec. 27, 2012 Office Action issued in Taiwanese Patent Application No. 095100035 (with translation).
Dec. 26, 2012 Office Action issued in Taiwanese Patent Application No. 097151814 (with translation).
Dec. 26, 2012 Office Action issued in Taiwanese Patent Application No. 097151805 (with translation).
Dec. 27, 2012 Office Action issued in Taiwanese Patent Application No. 097151801 (with translation).
Oct. 18, 2007 European Search Report issued in European Patent Application No. 07017146.7.
Apr. 2, 2007 European Search Report issued in European Patent Application No. 04724369.6.
Oct. 1, 2008 Supplemental European Search Report issued in European Patent Application No. 04817303.3.
Apr. 24, 2008 Supplemental European Search Report issued in European Patent Application No. 08002882.2.
Jun. 25, 2010 European Search Report issued in European Patent Application No. 09167707.0.
Oct. 13, 2009 European Search Report issued in European Patent Application No. 09167707.0.
Feb. 23, 2009 Office Action issued in European Patent Application No. 08002882.2.
Mar. 31, 2009 Office Action issued in European Patent Application No. 04 799 453.8.
May 26, 2010 Office Action issued in European Patent Application No. 07 017 146.7.
May 12, 2009 Office Action issued in European Patent Application No. 04 724 369.6.
Jul. 12, 2010 Office Action issued in European Patent Application No. 06 711 853.9.
Oct. 8, 2010 Office Action issued in European Patent Application No. 06822564.8.
Oct. 7, 2009 Office Action issued in European Patent Application No. 04 799 453.8.
Sep. 25, 2007 Office Action issued in European Patent Application No. 04 799 453.8.
Jan. 18, 2010 Office Action issued in Korean Patent Application No. 10-2008-701908.1 (with translation).
Nov. 15, 2007 Office Action issued in Korean Patent Application No. 10-2007-7022489 (with translation).
Apr. 3, 2008 Office Action issued in Korean Patent Application No. 10-2006-7008368 (with translation).
Jan. 4, 2008 Office Action issued in Korean Patent Application No. 10-2006-7008368 (with translation).
Feb. 2, 2007 Office Action issued in Korean Patent Application No. 10-2006-7008368 (with translation).
Jan. 18, 2010 Office Action issued in Korean Patent Application No. 10-2008-7019082 (with translation).
Dec. 3, 2010 Office Action issued in Korean Patent Application No. 10-2008-7029536 (with translation).
Nov. 19, 2010 Office Action issued in Korean Patent Application No. 10-2008-7029535 (with translation).
Oct. 27, 2010 Office Action issued in Korean Patent Application No. 10-2005-7009937 (with translation).
Mar. 27, 2009 Office Action issued in Chinese Patent Application No. 2007101956440 (with translation).
Dec. 14, 2010 Office Action issued in Chinese Patent Application No. 200380104450.5 (with translation).
Jun. 13, 2008 Office Action issued in Chinese Patent Application No. 2003801044505 (with translation).
Jan. 18, 2008 Office Action issued in Chinese Patent Application No. 2003801044505 (with translation).
Jun. 29, 2007 Office Action issued in Chinese Patent Application No. 2003801044505 (with translation).
Oct. 24, 2008 Office Action issued in Chinese Patent Application No. 2007101109529 (with translation).
Nov. 13, 2009 Office Action issued in Chinese Patent Application No. 200810211496.1 (with translation).
Jul. 25, 2008 Office Action issued in Chinese Patent Application No. 200710110949.7 (with translation).
Aug. 21, 2009 Office Action issued in Chinese Patent Application No. 200810126659.6 (with translation).
May 5, 2010 Office Action issued in Chinese Patent Application No. 200810126659.6 (with translation).
Dec. 4, 2009 Office Action issued in Chinese Patent Application No. 2007101109529 (with translation).
Apr. 13, 2010 Office Action issued in Chinese Patent Application No. 2007101109529 (with translation).
Jun. 5, 2009 Office Action issued in Chinese Patent Application No. 2007101109497 (with translation).
Jun. 5, 2009 Office Action issued in Chinese Patent Application No. 2007101109482 (with translation).
Jul. 25, 2008 Office Action issued in Chinese Patent Application No. 2007101109482 (with translation).
Jun. 5, 2009 Office Action issued in Chinese Patent Application No. 2007101109529 (with translation).
Jun. 5, 2009 Office Action issued in Chinese Patent Application. No. 2007101109514 (with translation).
Jul. 25, 2008 Office Action issued in Chinese Patent Application No. 2007101109514 (with translation).
Jun. 5, 2009 Office Action issued in Chinese Patent Application No. 2007101 10950X (with translation).
Jul. 25, 2008 Office Action issued in Chinese Patent Application No. 2007101 10950X (with translation).
Jun. 5, 2009 Office Action issued in Chinese Patent Application No. 2007101956421 (with translation).
Apr. 28, 2010 Office Action issued in Chinese Patent Application No. 200710195642.1 (with translation).
Dec. 18, 2009 Office Action issued in Chinese Patent Application No. 2007101956421 (with translation).
Dec. 18, 2009 Office Action issued in Chinese Patent Application No. 2007101956417 (with translation).
Jun. 5, 2009 Office Action issued in Chinese Patent Application No. 2007101956417 (with translation).
Dec. 18, 2009 Office Action issued in Chinese Patent Application No. 2007101956440 (with translation).
Aug. 7, 2009 Office Action issued in Chinese Patent Application No. 2007101956440 (with translation).
Jan. 8, 2010 Office Action issued in Chinese Patent Application No. 2003801044505 (with translation).
Oct. 26, 2004 Office Action issued in Chinese Patent Application No. 200480031414.5 (with translation).
Jun. 10, 2010 Office Action issued in Chinese Patent Application No. 200810211497.6 (with translation).
Feb.'6, 1996 Office Action issued in Taiwanese Patent Application No. 093109836 (with translation).
Jul. 27, 2009 Office Action issued in Taiwanese Patent Application No. 092133642 (with translation).
Mar. 17, 2008 Office Action issued in Taiwanese Patent Application No. 092133642 (with translation).
Jul. 13, 2006 Office Action issued in Taiwanese Patent Application No. 092133642 (with translation).
May 4, 2005 Office Action issued in Taiwanese Patent Application No. 092133642 (with translation).
Dec. 3, 2004 Office Action issued in Taiwanese Patent Application No. 092133642 (with translation).
Jan. 28, 2010 Office Action issued in Japanese Patent Application No. 2008-077129 (with translation).
Jun. 14, 2010 Office Action issued in Japanese Patent Application No. 2010-006125 (with translation).
Apr. 15, 2010 Office Action issued in Japanese Patent Application No. 2007-251263 (with translation).
Mar. 24, 2011 Office Action issued in Japanese Patent Application No. 2007-251263 (with translation).
Jan. 28, 2010 Office Action issued in Japanese Patent Application No. 2005-515005 (with translation).
Feb. 20, 2009 Office Action issued in Japanese Patent Application No. 2005-505207 (with translation).
Mar. 8, 2010 Office Action issued in Japanese Patent Application No. 2005-505207 (with translation).
Aug. 5, 2009 Office Action issued in Japanese Patent Application No. 2004-570728 (with translation).
Nov. 9, 2009 Office Action issued in Japanese Patent Application No. 2003-402584 (with translation).
Nov. 10, 2009 Office Action issued in Japanese Patent Application No. 2003-390672 (with translation).
Apr. 24, 2012 Office Action issued in Japanese Patent Application No. 2009-149426 (with translation).
Sep. 27, 2011 Office Action issued in Japanese Patent Application No. 2010-003941 (with translation).
Feb. 14, 2012 Office Action issued in Japanese Patent Application No. 2010-003941 (with translation).
Sep. 27, 2011 Office Action issued in Japanese Patent Application No. 2010-003938 (with translation).
Feb. 14, 2012 Office Action issued in Japanese Patent Application No. 2010-003938 (with translation).
Mar. 6, 2012 Office Action issued in Japanese Patent Application No. 2007-544099 (with translation).
Sep. 20, 2011 Office Action issued in Japanese Patent Application No. 2009-225810 (with translation).
May 31, 2011 Office Action issued in Japanese Patent Application No. 2009-225810 (with translation).
Jul. 14, 2008 Notice of Allowance issued in U.S. Appl. No. 11/246,642.
Feb. 20, 2007 Office Action issued in U.S. Appl. No. 11/246,642.
May 17, 2007 Office Action issued in U.S. Appl. No. 11/246,642.
Dec. 4, 2007 Office Action issued in U.S. Appl. No. 11/246,642.
Jun. 20, 2008 Corrected Notice of Allowance issued in U.S. Appl. No. 11/140,103.
Apr. 25, 2007 Office Action issued in U.S. Appl. No. 11/140,103.
Jul. 12, 2007 Office Action issued in U.S. Appl. No. 11/140,103.
Feb. 14, 2008 Office Action issued in U.S. Appl. No. 11/140,103.
Nov. 6, 2008 Office Action issued in U.S. Appl. No. 12/155,301.
Apr. 16, 2009 Office Action issued in U.S. Appl. No. 12/155,301.
Sep. 14, 2009 Office Action issued in U.S. Appl. No. 12/155,301.
Apr. 22, 2010 Office Action issued in U.S. Appl. No. 12/155,301.
Aug. 31, 2011 Office Action issued in U.S. Appl. No. 12/093,303.
Jan. 4, 2010 Notice of Allowance issued in U.S. Appl. No. 11/644,966.
Apr. 14, 2010 Notice of Allowance issued in U.S. Appl. No. 11/644,966.
Aug. 2, 2010 Notice of Allowance issued in U.S. Appl. No. 11/644,966.
Feb. 8, 2011 Notice of Allowance issued in U.S. Appl. No. 11/644,966.
Apr. 22, 2008 Office Action issued in U.S. Appl. No. 11/644,966.
Nov. 12, 2008 Office Action issued in U.S. Appl. No. 11/410,952.
Feb. 8, 2011 Office Action issued in U.S. Appl. No. 12/320,465.
Nov. 30, 2010 Notice of Allowance issued in U.S. Appl. No. 12/289,518.
Nov. 18, 2010 Notice of Allowance issued in U.S. Appl. No. 12/289,515.
Mar. 23, 2011 Notice of Allowance issued in U.S. Appl. No. 12/289,515.
Apr. 5, 2012 Notice of Allowance issued in U.S. Appl. No. 11/644,966.
Jun. 23, 2011 Office Action issued in Chinese Patent Application No. 200910173714.1 (with English Translation).
Jul. 8, 2011 Office Action issued in U.S. Appl. No. 12/318,216.
Jul. 13, 2011 Notice of Allowance issued in U.S. Appl. No. 11/410,952.
Jul. 20, 2011 Office Action issued in Taiwanese Patent Application No. 094100817 (with English Translation).
Aug. 4, 2011 Office Action in Taiwanese Patent Application No. 093131767 (with English translation).
Sep. 1, 2011 Office Action in U.S. Appl. No. 11/902,277.
Sep. 13, 2011 Office Action in European Patent Application No. 04 799 453.8.
Jul. 5, 2011 Office Action in Chinese Patent Application No. 201010128136.2 (with English translation).
Aug. 11, 2011 Office Action in Korean Patent Application No. 10-2010-7000897 (with English translation).
Jul. 26, 2011 Office Action in Korean Patent Application No. 10-2006-7018069 (with English translation).
Aug. 11, 2011 Office Action in Korean Patent Application No. 10-2010-7000893 (with English translation).
Third Party Submission Information Statement issued in Korean Patent Application No. 10-869390, dated Feb. 8, 2011 (with translation).
Feb. 7, 2011 Patent Register of Korean Patent Application No. 869390.
Carl Zeiss SMT GmbH—Microsoft Internet Explorer, “Semiconductor Technologies”, http://www.zeiss.com.
Wave Plate, Wikipedia, the free encyclopedia, http://en.wikipedia.org/wiki/Wave_plate, Feb. 7, 2011, pp. 16-1-16-16.
Marc D. Himel et al., “Design and fabrication of customized illumination patterns for low k1 lithography: a diffractive approach”, Proceedings of SPIE, vol. 4346, pp. 11-1-11-7.
Sep. 6, 2011 Notice of Allowance issued in U.S. Appl. No. 11/644,966.
Sep. 30, 2011 Office Action issued in Korean Patent Application No. 10-2005-7018973 (with translation).
Feb. 28, 2011 Patent Register of Korean Patent No. 10-1020378.
Mar. 9, 2011 Third Party Submission Information Statement issued in Korean Patent No. 10-1020378 (with English translation).
Oct. 18, 2011 Office Action issued in Japanese Patent Application No. 2006-262589 (with English translation).
Oct. 18, 2011 Office Action issued in Japanese Patent Application No. 2005-515570 (with English translation).
Nov. 15, 2011 Office Action issued in European Patent Application No. 09 167 707.0.
Nov. 10, 2011 Office Action issued in European Patent Application No. 07 017 146.7.
Nov. 15, 2011 Office Action issued in Korean Patent Application No. 10-2009-7010159 (with English translation).
Nov. 15, 2011 Office Action issued in Korean Patent Application No. 10-2009-7010158 (with English translation).
Nov. 30, 2011 Office Action issued in U.S. Appl. No. 11/902,282.
Dec. 14, 2011 Office Action issued in U.S. Appl. No. 11/902,277.
Nov. 25, 2011 Office Action issued in European Patent Application No. 06 711 853.9.
Third Party Submission Information Statenent issued in Korean Patent Application No. 1020455, dated Mar. 9, 2011(with translation).
Feb. 28, 2011 Patent Register of Korean Patent Application No. 1020455.
Third Party Submission Information Statement issued in Korean Patent Application No. 839686, dated Feb. 8, 2011 (with translation).
Jun. 12, 2008 Patent Register of Korean Patent Application No. 839686.
Oct. 10, 2011 Office Action issued in Chinese Patent Application No. 200710110952.9(with translation).
Dec. 16, 2011 Office Action issued in U.S. Appl. No. 13/067,958.
Dec. 15, 2011 Office Action issued in U.S. Appl. No. 12/382,277.
Dec. 12, 2011 Office Action issued in European Patent Application No. 10 174 843.2.
Nov. 17, 2011 Office Action issued in Taiwanese Patent Application No. 096119463 (with English translation).
Nov. 22, 2011 Office Action issued in Chinese Patent Application No. 200910173718.X (with English translation).
Korean Language Dictionary, 5th Edition, Jan. 10, 2002, MinJungseorim, Seoul, Korea (with English Translation).
“Polarizer,” Wikipedia, http://en.wikipedia.org/wiki/Polarizer, Oct. 18, 2011 (11 pp.).
Nov. 29, 2011 Written Rebuttal against the Written Answer filed by the Respondent in Korean Patent Application No. 10-2006-7008368 (with English translation).
Nov. 29, 2011 Written Rebuttal against the Written Answer filed by the Respondent in Korean Patent Application No. 10-2007-7022489 (with English translation).
Nov. 29, 2011 Written Rebuttal against the Written Answer filed by the Respondent in Korean Patent Application No. 10-2008-7019081 (with English translation).
Nov. 29, 2011 Written Rebuttal against the Written Answer filed by the Respondent in Korean Patent Application No. 10-2008-7019082 (with English translation).
Feb. 13, 2012 Office Action issued in Taiwanese Patent Application No. 094100817 (with English translation).
Mar. 5, 2013 Office Action issued in Chinese Patent Application No. 200710110949.7 (with translation).
Mar. 5, 2013 Office Action issued in Chinese Patent Application No. 200710110951.4 (with translation).
Apr. 2, 2013 Office Action issued in Japanese Patent Application No. 2010-290979 (with translation).
Mar. 19, 2013 Office Action issued in Japanese Patent Application No. 2010-145155 (with translation).
Apr. 9, 2013 Office Action issued in Korean Patent Application No. 10-2012-7008342 (with translation).
Apr. 2, 2013 Translation of Office Action issued in Japanese Patent Application No. 2010-286303.
Feb. 28, 2013 Trial Decision issued in Korean Patent Application No. 10-0839686, Appeal No. 2011Dang301 (with translation).
Feb. 28, 2013 Trial Decision issued in Korean Patent Application No. 10-0869390, Appeal No. 2011Dang302 (with translation).
Feb. 28, 2013 Trial Decision issued in Korean Patent Application No. 10-1020455, Appeal No. 2011Dang510 (with translation).
Feb. 28, 2013 Trial Decision issued in Korean Patent Application No. 10-1020378, Appeal No. 2011Dang511 (with translation).
Mar. 20, 2013 Office Action issued in U.S. Appl. No. 11/902,282.
Mar. 26, 2013 Office Action issued in U.S. Appl. No. 11/902,277.
Jan. 18, 2012 Office Action issued in European Patent Application No. 10 174 843.2.
Jan. 19, 2012 Office Action issued in U.S. Appl. No. 12/458,635.
Feb. 10, 2012 Office Action issued in European Patent Application No. 10 012 876.8.
Mar. 6, 2012 Notice of Allowance issued in U.S. Appl. No. 12/289,515.
Japanese Office Action issued in Japanese Application No. JP 2005-515570 dated Jan. 17, 2012 (w/ Translation).
Japanese Office Action issued in Japanese Application No. JP 2006-262589 dated Jan. 17, 2012 (w/ Translation).
Office Action issued Feb. 22, 2012 in Chinese Patent Application No. 200910173715.6 (with translation).
Office Action issued Mar. 30, 2012 in U.S. Appl. No. 12/318,216.
Office Action issued Mar. 8, 2012 in Taiwanese Patent Application No. 093131767 (with translation).
Office Action issued Nov. 28, 2011 in U.S. Appl. No. 12/801,043.
Office Action issued Jan. 25, 2012 in U.S. Appl. No. 12/801,043.
Apr. 17, 2013 Office Action issued in Korean Patent Application No. 10-2013-7002721 (with translation).
Apr. 3, 2013 Office Action issued in Chinese Patent Application No. 200910173717.5 (with translation).
Apr. 3, 2013 Office Action issued in Chinese Patent Application No. 200910173716.0 (with translation).
Apr. 18, 2013 Office Action issued in Korean Patent Application No. 10-2012-7003793 (with translation).
May 7, 2013 Office Action issued in European Patent Application No. 04817303.3.
May 2, 2013 Office Action issued in Taiwanese Patent Application No. 101102214 (with translation).
May 14, 2013 Office Action issued in Japanese Patent Application No. 2011-130545 (with translation).
Apr. 23, 2013 Office Action issued in Chinese Patent Application No. 201010128876.6 (with translation).
May 16, 2013 Office Action issued in Taiwanese Patent Application No. 098115513 (with translation).
Jun. 13, 2013 Search Report issued in European Patent Application No. 13156325.6.
May 29, 2013 Office Action issued in European Patent Application No. 04799453.8.
May 28, 2013 Office Action issued in Japanese Patent Application No. 2011-144669 (with translation).
May 28, 2013 Office Action issued in Japanese Patent Application No. 2010-094216 (with translation).
Jun. 18, 2013 Search Report issued in European Patent Application No. 13156322.3.
Jun. 21, 2013 Search Report issued in European Patent Application No. 13156324.9.
Jul. 22, 2013 Notice of Allowance issued in U.S. Appl. No. 12/289,515.
Aug. 1, 2013 Office Action issued in U.S. Appl. No. 12/318,216.
Aug. 6, 2013 Office Action issued in U.S. Appl. No. 13/889,798.
Jul. 1, 2013 Preparatory Document (1), Patent Invalidation Action 2013HEO3937 issued in Korean Patent Application No. 10-2006-7008368 (with translation).
Jul. 1, 2013 Preparatory Document (1), Patent Invalidation Action 2013HEO3920 issued in Korean Patent Application No. 10-2007-7022489 (with translation).
Jul. 1, 2013 Preparatory Document (1), Patent Invalidation Action 2013HEO3944 issued in Korean Patent Application No. 10-2008-7019081 (with translation).
Jul. 1, 2013 Preparatory Document (1), Patent Invalidation Action 2013HEO3951 issued in Korean Patent Application No. 10-2008-7019082 (with translation).
Jul. 1, 2013 Definition of Technical Terms (with translation).
Doosan Encyclopedia, Optic axis (with translation).
Bass et al., “Handbook of Optics”, McGraw-Hill, 1995.
Buhrer, “Four waveplate dual tuner for birefringent filters and multiplexers”, Applied Optics vol. 26, No. 17, Sep. 1, 1987, pp. 3628-3632.
Niziev et al., “Influence of Beam Polarization on Laser Cutting Efficiency”, Journal of Physics D Applied Physics 32, 1999, pp. 1455-1461.
Bagini et al., “The Simon-Mukunda polarization gadget”, Eur. J. Phys. 17, 1996, pp. 279-284.
McGuire Jr., et al., “Analysis of spatial pseudodepolarizers in imaging systems”, Optical Engineering, vol. 29 No. 12, 1990, pp. 1478-1484.
Jun. 4, 2013 Office Action issued in Chinese Patent Application No. 2007101 10950.X (with translation).
Jul. 23, 2013 Office Action issued in U.S. Appl. No. 12/458,635.
Jul. 15, 2013 Office Action issued in U.S. Appl. No. 13/067,958.
Jul. 23, 2013 Office Action issued in U.S. Appl. No. 11/410,952.
Jul. 15, 2013 Office Action issued in Chinese Patent Application No. 200910173718.X (with translation).
Sep. 11, 2013 Office Action issued in U.S. Appl. No. 13/890,603.
Aug. 23, 2013 Reply Brief, Patent Invalidation Action 2013HEO3975 issued in Korean Patent Application No. 10-2007-7022489 (with translation).
Aug. 23, 2013 Reply Brief, Patent Invalidation Action 2013HEO3982 issued in Korean Patent Application No. 10-2008-7019081 (with translation).
Oct. 10, 2013 Office Action issued in U.S. Appl. No. 13/890,547.
Oct. 15, 2013 Office Action issued in U.S. Appl. No. 13/889,965.
Oct. 16, 2013 Office Action issued in U.S. Appl. No. 13/137,003.
Oct. 17, 2013 Notice of Allowance issued in Korean Patent Application No. 10-2012-7008342 (with translation).
Oct. 29, 2013 Office Action issued in U.S. Appl. No. 13/890,142.
Oct. 21, 2013 Office Action issued in U.S. Appl. No. 13/137,002.
Oct. 17, 2013 Notice of Allowance issued in U.S. Appl. No. 11/902,277.
Oct. 18, 2013 Office Action issued in U.S. Appl. No. 11/902,282.
Oct. 29, 2013 Office Action issued in U.S. Appl. No. 13/890,547.
Nov. 5, 2013 Office Action issued in Japanese Patent Application No. 2012-080675 (with translation).
Nov. 5, 2013 Office Action issued in Japanese Patent Application No. 2012-080678 (with translation).
Nov. 7, 2013 Office Action issued in U.S. Appl. No. 12/289,518.
Nov. 8, 2013 Office Action issued in U.S. Appl. No. 13/912,832.
Nov. 12, 2013 Office Action issued in U.S. Appl. No. 13/889,860.
Nov. 13, 2013 Office Action issued in U.S. Appl. No. 13/889,965.
Nov. 20, 2013 Office Action issued in U.S. Appl. No. 12/289,515.
H.G. Oh, “Notarial Certificate of affiant Professor H.G. Oh”, Oct. 22, 2013, pp. 1-29-1-15 (with translation).
Totzek, “Declaration of Dr. Michael Totzeck”, Oct. 8, 2013 pp. 1-32 (with translation).
“Korean patent office guidelines for examination”, 2010 (with partial translation).
Oct. 25, 2013 Preparatory Document (2-1), Korean Invalidation Action 2013HEO03937 (with translation).
Oct. 25, 2013 Preparatory Document (2-2) Korean Invalidation Action 2013HEO03937 (with translation).
Dec. 13, 2013 Office Action issued in European Patent Application No. 09015058.2.
Dec. 4, 2013 Chinese Office Action issued in Chinese Patent Application No. 200710110950.X (with translation).
Dec. 17, 2013 Korean Office Action issued in Korean Patent Application No. 10-2013-7026632 (with translation).
Dec. 18, 2013 Korean Office Action issued in Korean patent Application No. 10-2012-7034127 (with translation).
Mar. 14, 2014 Office Action issued in U.S. Appl. No. 13/889,798.
Jan. 23, 2014 “Submission Document for Korean Patent Invalidation Action No. 2013HEO3920” issued in Korean Patent Application No. 10-2007-7022489 (with English translation).
Jan. 23, 2014 “Submission Document for Korean Patent Invalidation Action No. 2013HEO3937” issued in Korean Patent Application No. 10-2006-7008368 (with English translation).
Jan. 23, 2014 “Submission Document for Korean Patent Invalidation Action No. 2013HEO3944” issued in Korean Patent Application No. 10-2008-7019081 (with English translation).
Jan. 23, 2014 “Submission Document for Korean Patent Invalidation Action No. 2013HEO3951” issued in Korean Patent Application No. 10-2008-7019082 (with English translation).
Jan. 23, 2014 “Submission Document for Korean Patent Invalidation Action No. 2013HEO3975” issued in Korean Patent Application No. 10-2007-7022489 (with English.
Jan. 23, 2014 “Submission Document for Korean Patent Invalidation Action No. 2013HEO3982” issued in Korean Patent Application No. 10-2008-7019081 (with English translation).
Feb. 13, 2014 Office Action issued in Chinese Patent Application No. 200910126047.1 (with English translation).
May 15, 2014 Decision Rendered by Division II of Korean Patent Court for Korean Patent Invalidation Action No. 2013HEO3920 (with English translation).
May 15, 2014 Decision Rendered by Division II of Korean Patent Court for Korean Patent Invalidation Action No. 2013HEO3937 (with English translation).
May 15, 2014 Decision Rendered by Division II of Korean Patent Court for Korean Patent Invalidation Action No. 2013HEO3944 (with English translation).
May 15, 2014 Decision Rendered by Division II of Korean Patent Court for Korean Patent Invalidation Action No. 2013HEO3951 (with English translation).
May 15, 2014 Decision Rendered by Division II of Korean Patent Court for Korean Patent Invalidation Action No. 2013HEO3975 (with English translation).
May 15, 2014 Decision Rendered by Division II of Korean Patent Court for Korean Patent Invalidation Action No. 2013HEO3982 (with English translation).
Apr. 4, 2014 Office Action issued in Chinese Patent Application No. 200910173718.X (with translation).
Apr. 29, 2014 Office Action issued in European Patent Application No. 13156325.6.
Apr. 29, 2014 Office Action issued in European Patent Application No. 13156324.9.
Apr. 29, 2014 Office Action issued in European Patent Application No. 13156322.3.
Apr. 16, 2014 Office Action issued in U.S. Appl. No. 12/458,635.
Apr. 23, 2014 Submission Document for Korean Patent Invalidation Action No. 2013HEO3920 (with English translation).
Apr. 23, 2014 Submission Document for Korean Patent Invalidation Action No. 2013HEO3937 (with English translation).
Apr. 23, 2014 Submission Document for Korean Patent Invalidation Action No. 2013HEO3944 (with English translation).
Apr. 23, 2014 Submission Document for Korean Patent Invalidation Action No. 2013HEO3951 (with English translation).
Apr. 23, 2014 Submission Document for Korean Patent Invalidation Action No. 2013HEO3975 (with English translation).
Apr. 23, 2014 Submission Document for Korean Patent Invalidation Action No. 2013HEO3982 (with English translation).
Jun. 3, 2014 Office Action issued in Japanese Patent Application No. 2013-157042 (with translation).
Jun. 3, 2014 Office Action issued in Japanese Patent Application No. 2013-157044 (with translation).
Jul. 14, 2011 Office Action issued in U.S. Appl. No. 13/137,002.
Jul. 14, 2011 Office Action issued in U.S. Appl. No. 13/137,003.
May 8, 2013 Office Action issued in U.S. Appl. No. 13/889,965.
Aug. 6, 2014 Office Action issued in U.S. Appl. No. 13/137,002.
Aug. 6, 2014 Office Action issued in U.S. Appl. No. 13/137,003.
Aug. 6, 2014 Office Action issued in U.S. Appl. No. 13/889,965.
Jun. 6, 2014 Office Action issued in Taiwanese Patent Application No. 101103772 (with translation).
Jun. 24, 2014 Office Action issued in European Patent Application No. EP 04817303.3.
Jun. 26, 2014 Search Report issued in European Patent Application No. EP 13165334.7.
Jun. 26, 2014 Search Report issued in European Patent Application No. EP 13165335.4.
Jun. 26, 2014 Search Report issued in European Patent Application No. EP 13165338.8.
Jun. 26, 2014 Search Report issued in European Patent Application No. EP 13165340.4.
Jul. 16, 2014 Office Action issued in U.S. Appl. No. 12/289,515.
Jun. 25, 2014 Office Action issued in U.S. Appl. No. 13/889,860.
Jun. 27, 2014 Office Action issued in U.S. Appl. No. 13/912,832.
Jun. 13, 2014 Office Action issued in Taiwanese Patent Application No. 101133189 (with translation).
Jun. 13, 2014 Office Action issued in Taiwanese Patent Application No. 101141665 (with translation).
Aug. 11, 2014 Office Action issued in Taiwanese Patent Application No. 101102214 (with translation).
Aug. 28, 2014 Office Action issued in South Korean Patent Application No. 10-2012-7034128 (with translation).
Sep. 11, 2014 Office Action issued in U.S. Appl. No. 13/382,277.
Sep. 12, 2014 Office Action issued in U.S. Appl. No. 13/890,142.
Oct. 21, 2014 Office Action issued in Japanese Application No. P2013-272100.
Nov. 5, 2014 Office Action issued in Chinese Application No. 200910126047.1.
Dec. 2, 2014 Office Action issued in Japanese Application No. 2013-272068.
Sep. 10, 2014 Office Action issued in U.S. Appl. No. 13/890,547.
Dec. 10, 2014 Office Action issued in U.S. Appl. No. 12/289,518.
Feb. 5, 2014 Office Action issued in U.S. Appl. No. 12/382,277.
Feb. 6, 2014 Office Action issued in U.S. Appl. No. 13/890,142.
Feb. 6, 2014 Office Action issued in U.S. Appl. No. 13/890,547.
Jan. 6, 2014 Office Action issued in Chinese Patent Application No. 200910173717.5.
Jan. 29, 2015 Office Action issued in U.S. Appl. No. 13/889,860.
The Second Division of Korean Patent Court, “Preparatory Document (3), Re: Patent Invalidation Action 2013HEO3920, Plaintiff: Carl Zeiss SMT GmbH, Defendant: Nikon Corporation” Dec. 13, 2013.
The Second Division of Korean Patent Court, “Preparatory Document (2), Re: Patent Invalidation Action 2013HEO3920, Plaintiff: Carl Zeiss SMT GmbH, Defendant: Nikon Corporation” Oct. 30, 2013.
The Second Divison of Korean Patent Court, “Preparatory document (3), Re: Patent Invalidation Action 2013HEO3937, Plaintiff: Carl Zeiss SMT GmbH, Defendant: Nikon Corporation” Dec. 13, 2013.
The Second division of Korean Patent Court, “Preparatory Document (3), Re: Patent Invalidation Action 2013HEO3944, Plaintiff: Carl Zeiss SMT GmbH, Defendant: Nikon Corporation” Dec. 13, 2013.
The Second Division of Korean Patent Court, “Preparatory Document (2), Re: Patent Invaliation Action 2013HEO3944, Plaintiff: Carl Zeiss SMT GmbH, Defendant: Nikon Corporation” Oct. 30, 2013.
The Second Division of Korean Patent Court, “Preparatory Document (3), Re: Patent Invalidation Action 2013HEO3951, Plaintiff: Carl Zeiss SMT GmbH, Defendant: Nikon Corporation” Dec. 13, 2013.
The Second Division of Korean Patent Court, “Preparatory Document (2), Re: Patent Invalidation Action 2013HEO3951, Plaintiff: Carl Zeiss SMT GmbH, Defendant: Nikon Corporation” Oct. 30, 2013.
The Second Division of Korean Patent Court, “Reference Document, Re: Patent Invalidation Action 2013HEO3975, Plaintiff: Nikon Corporation, Defendant: Carl Zeiss SMT GmbH” Jan. 14, 2014.
Jun. 5, 2014 Office Action issued in U.S. Appl. No. 13/890,603.
Feb. 2, 2015 Office Action issued in U.S. Appl. No. 13/912,832.
Feb. 5, 2015 Office Action issued in U.S. Appl. No. 12/289,515.
Feb. 10, 2015 Office Action issued in Korean Patent Application No. 10-2014-7003559.
Feb. 11, 2015 Office Action issued in Korean Patent Application No. 10-2010-7008441.
Mar. 24, 2015 Office Action issued in Japanese Patent Application No. 2014-087750.
Apr. 24, 2015 Office Action issued in U.S. Appl. No. 13/890,142.
Apr. 21, 2015 Office Action issued in U.S. Appl. No. 13/890,547.
Apr. 27, 2015 Office Action issued in Korean Patent Application No. 10-2014-7009172.
Jun. 23, 2015 Office Action issued in Japanese Patent Application No. 2014-158994.
Jul. 20, 2015 Notice of Allowance issue in U.S. Appl. No. 13/067,958.
Jul. 16, 2015 Office Action issued in U.S. Appl. No. 13/912,832.
Jul. 15, 2015 Office Action issued in U.S. Appl. No. 12/289,515.
Jul. 16, 2015 Office Action issued in U.S. Appl. No. 13/889,860.
Aug. 4, 2015 Office Action issued in Japanese Application No. 2014-197119.
Aug. 4, 2015 Office Action issued in Japanese Application No. 2014-216961.
Aug. 4, 2015 Office Action issued in Japanese Application No. 2014-216964.
Oct. 8, 2015 Office Action issued in Korean Application No. 10-2010-7008441.
Oct. 6, 2015 Office Action issued in Japanese Application No. 2014-256977.
Oct. 22, 2015 Office Action issued in U.S. Appl. No. 14/713,428.
Oct. 22, 2015 Office Action issued in U.S. Appl. No. 14/048,563.
Dec. 1, 2015 Office Action issued in Korean Application No. 10-2014-7036570.
Nov. 16, 2015 Office Action issued in Korean Application No. 10-22014-7003559.
Jan. 5, 2016 Office Action issued in Japanese Application No. 2015-018675.
Jan. 21, 2016 Advisory Action issued in U.S. Appl. No. 13/889,860.
Jan. 21, 2016 Advisory Action issued in U.S. Appl. No. 12/289,515.
Dec. 30, 2015 Office Action issued in Taiwanese Application No. 102142028.
Jan. 12, 2016 Office Action received in Taiwanese Application No. 103116064.
Feb. 1, 2016 Office Action issued in Korean Application No. 10-2015-7005285.
Jan. 27, 2016 Office Action issued Taiwanese Application No. 103116066.
Mar. 23, 2016 Office Action issued in U.S. Appl. No. 13/890,142.
Mar. 24, 2016 Office Action issued in U.S. Appl. No. 13/890,547.
May 17, 2016 Office Action issued in U.S. Appl. No. 14/713,385.
May 24, 2016 Office Action issued in Japanese Application No. JP2015-165058.
Jun. 14, 2016 Office Action issued in Japanese Patent Application No. 2014-256977.
Sep. 6, 2016 Office Action issued in Japanese Application No. 2015-238871.
Nov. 29, 2016 Office Action issued in Japanese Application No. JP 2016-043787.
Dec. 21, 2016 Office Action issued in U.S. Appl. No. 14/818,788.
Jan. 17, 2017 Search Report issued in European Application No. 16167687.9.
Feb. 7, 2017 Office Action issued in Japanese Application No. 2015-198071.
Feb. 7, 2017 Office Action issued in Taiwanese Application No. 104133625.
Mar. 16, 2017 Office Action issued in Taiwanese Application No. 105123963.
Apr. 25, 2017 Office Action issued in Japanese Application No. 2016-145649.
May 16, 2017 Office Action issued in Korean Application No. 10-2016-7013759.
Jun. 15, 2017 Office Action issued in U.S. Appl. No. 15/497,883.
Jul. 10, 2017 Office Action issued in U.S. Appl. No. 12/289,515.
Jul. 11, 2017 Office Action issued in U.S. Appl. No. 13/889,860.
Jul. 10, 2017 Office Action issued in U.S. Appl. No. 13/912,832.
Oct. 3, 2017 Office Action issued in Japanese Application No. 2017-000747.
Sep. 25, 2017 Office Action issued in European Application No. 17170796.1.
Oct. 17, 2017 Office Action issued in Japanese Application No. 2016-145649.
Nov. 28, 2017 Office Action issued in Korean Patent Application No. 10-2010-7008441.
Dec. 19, 2017 Office Action issued in U.S. Appl. No. 14/818,788.
Feb. 5, 2018 Office Action issued in U.S. Appl. No. 15/497,861.
Jan. 26, 2018 Office Action issued in Korean Patent Application No. 10-2016-7000485.
Mar. 13, 2018 Office Action issued in Japanese Patent Application No. P2017-063051.
Mar. 14, 2018 Office Action issued in Korean Patent Application No. 10-2016-7013759.
May 17, 2018 Office Action issued in U.S. Appl. No. 13/137,002.
Jul. 24, 2017 Office Action issued in Korean Application No. 10-2015-7022796.
Jul. 10, 2018 Office Action issued in Japanese Patent Application No. P2017-160467.
Jul. 2, 2018 Office Action issued in U.S. Appl. No. 15/662,948.
Jul. 12, 2018 Office Action issued in European Patent Application No. 17170800.1.
May 17, 2018 Office Action issued in Taiwanese Patent Application No. 106144296.
Jul. 24, 2018 Office Action issued in U.S. Appl. No. 15/425,554 (without attachment).
Jul. 20, 2018 Office Action issued in Korean Patent Application No. 10-2010-7008441.
Jul. 24, 2018 Office Action issued in U.S. Appl. No. 15/425,554.
Jul. 20, 20158 Office Action issued in Korean Patent Application No. 10-2010-7008441.
Aug. 31, 2018 Office Action issued in U.S. Appl. No. 14/818,788.
Sep. 19, 2018 Office Action issued in U.S. Appl. No. 16/055,452.
Oct. 15, 2018 Office Action issued in Korean Patent Application No. 10-2017-7003484.
Nov. 13, 2018 Office Action issued in Japanese Patent Application No. 2018-017563.
Sep. 21, 2018 Office Action issued in European Patent Application No. 16167687.9.
Nov. 5, 2018 Office Action issued in U.S. Appl. No. 15/497,861.
Nov. 26, 2018 Office Action issued in Korean Patent Application No. 10-2015-7005285.
Nov. 28, 2018 Office Action issued in U.S. Appl. No. 15/497,883.
Apr. 10, 2018 Office Action issued in Japanese Patent Application No. P2016-220063.
Jul. 18, 2018 Office Action issued in European Patent Application No. 17 170 796.1.
Jan. 15, 2019 Office Action issued in Japanese Patent Application No. 2016-220063.
Related Publications (1)
Number Date Country
20110299055 A1 Dec 2011 US
Continuations (2)
Number Date Country
Parent 12320465 Jan 2009 US
Child 13137342 US
Parent 11319057 Dec 2005 US
Child 12320465 US
Continuation in Parts (1)
Number Date Country
Parent PCT/JP2004/016247 Nov 2004 US
Child 11319057 US