The contents of German patent application DE 10 2010 062 779.8 is incorporated by reference.
The invention relates to an illumination optical system for projection lithography. Furthermore, the invention relates to an illumination system with an illumination optical system of this type, a projection exposure system with an illumination system of this type, a method for producing structured components and a structured component produced by a method of this type.
An object of the present invention is to develop an illumination optical system of the type mentioned at the outset in such a way that an influencing and/or a monitoring of an illumination intensity distribution over the object field is made possible, as far as possible without influencing an illumination angle distribution.
This object is achieved according to the invention by an illumination optical system having the features disclosed in claim 1.
It was recognised according to the invention that an illumination optical system, which is configured in such a way that at least some of the part bundles are superimposed on one another in superimposition planes spaced apart from one another according to corresponding superimposition specifications, provides the possibility, on the one hand, of influencing the illumination light in one of the two superimposition planes to specify an illumination intensity distribution, without simultaneously undesirably influencing thereby an illumination angle distribution and, in the other of the two superimposition planes, providing an energy or intensity monitoring of the illumination light undisturbed by slight fluctuations of the part bundles. The invention is released from the demand of optimising a superimposition of the part bundles of the illumination light in precisely one plane. A specification of a superimposition in the two superimposition planes spaced apart from one another according to the two superimposition specifications increases the degrees of freedom with respect to a possible influencing and/or monitoring of the part bundles of the illumination light. The result is the possibility of an illumination, which can be reproduced well, of the object field within narrow predetermined tolerances.
An illumination optical system according to claim 2 leads to a further increase in the degrees of freedom in the illumination. It was recognised that, inasmuch as the superimposition specifications in the two superimposition planes that do not coincide with the object plane are adhered to, adhering to an exact superimposition specification in the object plane is not important. In the object plane, certain boundary conditions, for example, the impinging of the illumination light within a target region predetermined by the object field, merely have to be fulfilled in the superimposition.
An illumination optical system according to claim 3 can be very compact and can be designed with a low number of optical components.
A superimposition of the part bundles according to claim 4 allows an influencing of the illumination light where the part bundles coincide, at least in portions, independently of the illumination angle or illumination direction.
An influencing of the part bundles of the illumination light in one of the superimposition planes, in particular an influencing independent of the illumination angle, can take place by means of a field intensity specification device according to claim 5. A corresponding field intensity specification device is known from WO 2009/074 211 A1. The influencing of the part bundles of the illumination light can take place in the second superimposition plane.
At least one free region according to claim 6 ensures that slight displacements of the part bundles in the first superimposition plane within these free ranges do not lead to great changes in the impinging of the free regions or in the impinging of core regions located completely within the three regions with the illumination light.
A superimposition specification according to claim 7 provides the possibility of influencing or monitoring the illumination light from a second direction independently of the illumination direction or the illumination angle. With regard to a reduction of sensitivity of the impingement in the first superimposition plane, that which was stated above in conjunction with the at least one free region applies.
An energy sensor according to claim 8 allows a monitoring of the energy or intensity of the illumination light and/or a transmission of components located in front of the energy sensor and guiding the illumination light.
An arrangement of the at least one sensor region according to claim 9 ensures that slight displacements of the part bundles do not lead to great changes in the impingement of the sensor regions. This displacement is therefore not undesirably interpreted as a fluctuation of the efficiency of the light source or the transmission of the component guiding the illumination light.
The advantages of an illumination system according to claim 10, a projection exposure system according to claim 11, a method for producing a structured component according to claim 12 and a component produced in this way according to claim 13 correspond to those, which were described above with reference to the illumination optical system. The light source may be an EUV light source with a useful light wavelength in the range between 5 nm and 30 nm. The projection exposure system is used for the lithographic production of a microstructured or nanostructured component.
Embodiments of the invention will be described in more detail below with the aid of the drawings, in which:
a to c show in three graphs
a) a superimposition of part bundles of an illumination of an object field illuminated by the illumination optical system and arranged in a reticle plane, proceeding from a predetermined test point pattern on the field facets of the field facet mirror according to
b) shows a corresponding superimposition of the part bundles, proceeding from the test point patterns in the plane of a field intensity specification device, also in various illumination situations, and
c) shows a superimposition of imaging beams of part bundles, which emanate from edge-side test point patterns of the field facets, in an energy sensor plane, also in various illumination situations;
a to c show, in a view similar to
A projection exposure system 1 for microlithography is used to produce a microstructured or nanostructured electronic semiconductor component. A light source 2 emits EUV radiation in the wavelength range, for example, between 5 nm and 30 nm. A useful radiation bundle of illumination light 3 is used for illumination and imaging within the projection exposure system 1. The illumination light 3, after the light source 2, firstly runs through a collector 4, which may, for example, be a nested collector with a multi-shell structure known from the prior art, for example a Wolter optical system. After the collector 4, the illumination light 3 firstly passes through an intermediate focal plane 5, which can be used to separate the illumination light 3 from undesired radiation or particle fractions. After running through the intermediate focal plane 5, the illumination light 3 firstly impinges on a field facet mirror 6.
An xyz-coordinate system is drawn in the drawing, in each case, to facilitate the description of positional relationships. The x-axis runs perpendicular to the plane of the drawing and into it in
After reflection on the field facet mirror 6, the illumination light 3 divided into part bundles, which are allocated to the individual field facets 7, impinges on a pupil fact mirror 10.
The channel-wise allocation of the pupil facets 11 to the field facets 7 takes place depending on a desired illumination by the projection exposure system 1. To activate certain pupil facets 11, the field facet mirrors 7 are individually tilted about the x-axis, on the one hand, and, on the other hand, about the y-axis.
The field facets 7 are imaged in a field plane 16 of the projection exposure system 1 by means of the pupil facet mirror 10 and a following transmission optical system 15 consisting of three EUV mirrors 12, 13, 14. The EUV mirror 14 is configured as a grazing incidence mirror. Downstream of the field plane 16 and spaced apart in the z-direction by about 5 mm to 20 mm is a reticle plane 17, in which a reticle 18 is arranged, by which, with the illumination light 3, an illumination region is illuminated, which coincides with an object field 19 of a downstream projection optical system 20 of the projection exposure system 1. In the projection exposure system 1, the field plane 16, into which the field facets 7 are imaged by the transmission optical system 15 in facet images, and the reticle plane 17, which is simultaneously the object plane of the projection optical system 20, do not therefore coincide. The illumination light 3 is reflected by the reticle 18.
The projection optical system 20 images the object field 19 in the reticle plane 17 into an image field 21 in an image plane 22. Arranged in this image plane 22 is a wafer 23, which carries a light-sensitive layer, which is exposed during the projection exposure by the projection exposure system 1. During the projection exposure, both the reticle 18 and the wafer 23 are scanned in a synchronised manner in the y-direction. The projection exposure system 1 is configured as a scanner. The scanning direction will also be called the object displacement direction below.
A field intensity specification device 24, which will be described in more detail below, is arranged in the field plane 16. The field intensity specification device 24 is used to adjust an intensity distribution that is scan-integrated, in other words integrated in the y-direction, over the object field 19. The field plane 16 is thus simultaneously an intensity specification plane of the illumination optical system 26. The field intensity specification device 24 is activated by a control device 25.
The field facet mirror 6, the pupil facet mirror 10, the mirrors 12 to 14 of the transmission optical system 15 and the field intensity specification device 24 are components of an illumination optical system 26 of the projection exposure system 1. The components 6, 10, 12, 13 and 14 of the illumination optical system 26 are used to guide the illumination light 3 here.
No pupil plane of the illumination optical system 26 or the projection optical system 20 lies between the field plane 16 and the reticle plane 17.
All the individual stops 27 are inserted into the useful radiation bundle of the illumination light 3 from one and the same side.
With the aid of the control device 25, the individual stops 27 can be adjusted independently of one another in the y-direction into a predetermined position. Depending on at what field height, in other words, in which x-position, an object point on the reticle 18 passes the object field 19, the scanning path of this object point in the y-direction and therefore the integrated illumination light intensity, which this object point experiences, is determined by the y-position of the respective individual stop 27. A homogenisation or a predetermined distribution of the useful radiation intensity illuminating the reticle 18 and subsequently, by means of the projection optical system 20, the wafer 23, can thus be achieved by means of a specification of the y-positions of the individual stops 27. The field intensity specification device 24 is also called a UNICOM.
An energy sensor 28 (cf.
The energy sensor 28 is arranged in an energy sensor plane 31, which extends parallel to the field plane 16 and to the reticle plane 17, in other words also parallel to the xy-plane. The energy sensor plane 31 is spaced apart from the reticle plane 17 at a spacing in the z-direction of about 20 mm to 80 mm. In the x-direction, the sensor units 29, 30 are just outside the x-values, over which the object field 19 extends. An energy monitoring of the illumination light 3, which reaches the reticle plane 17, takes place with the sensor units 29, 30. The energy sensor 28 in the process absorbs fractions of the illumination light 3, which are not used to expose the reticle 18, but would illuminate regions lying next to the structure to be imaged, in other words next to the region of the reticle 18 to be exposed. Using the energy sensor 28, a monitoring, on the one hand, of the efficiency of the light source 2 and, on the other hand, of the reflectivities or transmissions of the components guiding the illumination light between the light source 2 and the reticle 18 is possible.
Neither the field plane 16 nor the energy sensor plane 31 is an image plane of the reticle plane 17. Accordingly, none of these planes 17, 31 is imaged in the object plane 17 of the projection optical system 20.
The field facets 7 of the configuration according to
a shows, with positive x-values and with negative x-values, in each case beyond the edges of the object field 19, shown by +signs, the superimposition of beams of the illumination light 3, which emanate from the test point patterns of the field facets 7, in a first, still unoptimised illumination situation. Each of the +signs (cf. 33 in
Impingement points of the beams of the illumination light 3 shown in
The first superimposition specification thus relates to the superimposition of the part bundles of the illumination light 3, which are allocated to the field facets 7, in the energy sensor plane 31, in other words in a first superimposition plane. According to the first superimposition specification, the part bundles of the illumination light 3 are thus superimposed on one another in the energy sensor plane 31, in other words in such a way that at least one free region, namely the sensitive region of the sensor unit 29, 30 within the energy sensor plane 31, is completely free of part bundle edges.
Impingement points shown in
The second superimposition specification relates to the superimposition of the part bundles of the illumination light 3 in the field plane 16, in other words in a second superimposition plane. This second superimposition specification is achieved by a displacement of the images of the individual field facets 7 in the field plane 16 both in the x-direction and in the y-direction, which is in turn achieved by corresponding tilting of the pupil facets 11, on the one hand, about the x-axis and, on the other hand, about the y-axis of the respective local xy-coordinate system of the respective pupil facet 11. The images of the field facets 7 and, accordingly, the impingement points 35 in the field plane 16 are displaced in such a way that good edge-side superimposition in the y-direction of edges of the field facet images is achieved, for example a good superimposition of the facet image edges along an edge line 36, which is shown in
The superimposition direction according to the first superimposition specification is the x-direction. The superimposition direction according the second superimposition specification is primarily the y-direction.
With the aid of
Components which correspond to those, which have already been described above with reference to
Two illumination situations, namely a firstly not yet optimised superimposition of the part bundles, which are shown by circles 37, and an optimised superimposition situation in accordance with the two superimposition specifications, shown by plus signs 38, are shown in
Those test points, which are allocated to the greatest x-values in the positive x-direction, and those test points, which are allocated to the smallest x-values in the negative x-direction, are located on regions of the field facets 7, from which illumination light 3 is reflected, which is not used to illuminate the object field 19, but primarily to impinge upon the sensor units 29, 30.
In the optimised superimposition situation (plus sign 38), which in turn takes place with the aid of the two superimposition specifications described above in conjunction with
In the optimised superimposition situations, which are shown by the plus signs 38 in
With the aid of
An enlarged insert in
Test points 41 with the point symbol “+” are imaged here on the left-hand and the right-hand edge of the object field 19 in the x-direction. Test points 41 with the point symbol “x” are imaged in the centre of the object field 19. Test points 41 with the point symbol “o” are imaged centrally in the respective field half of the object field 19.
All of the test points 41 are, in each case, when adjacent field facets 7 are observed, displaced by a certain amount in the x-direction with respect to one another. This x-displacement amount may also be zero in adjacent field facets 7.
In the facet group designated “A” in
A clear displacement of the measuring points 41 in the x-direction takes place in the facet group B between adjacent field facets 7, this displacement partially following a zigzag line, viewed over the field facets 7 of the facet groups B.
The x-displacements within the facet group C follow a pattern, which can be understood as a mixture of the x-displacement patterns in the field groups A and B.
Because of the x displacement according to
In the projection exposure, the reticle 18 and the wafer 22, which carries a coating that is light-sensitive to the EUV illumination light 3, is provided. At least one portion of the reticle 18 is then projected onto the wafer 23 with the aid of the projection exposure system 1. Finally, the light-sensitive layer exposed with the EUV illumination light 3 is developed on the wafer 23. In this manner, the microstructured or nanostructured component, for example a semiconductor chip, is produced.
Number | Date | Country | Kind |
---|---|---|---|
102010062779.8 | Dec 2010 | DE | national |
Number | Date | Country | |
---|---|---|---|
61421702 | Dec 2010 | US |
Number | Date | Country | |
---|---|---|---|
Parent | PCT/EP2011/071714 | Dec 2011 | US |
Child | 13894120 | US |