Image Sensor and Method of Manufacturing the Same

Abstract

A CMOS image sensor and a method of manufacturing the same are provided. The CMOS image sensor includes a semiconductor substrate including a plurality of photodiodes and a plurality of transistors, a first interlayer dielectric formed on the semiconductor substrate, a metal wiring and a second interlayer dielectric formed on the first interlayer dielectric, a plurality of color filter layers formed in the trenches formed in the second interlayer dielectric, and a plurality of micro lenses formed on the plurality of the color filter layers.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an equivalent circuit diagram of the conventional 3T type CMOS image sensor.

FIG. 2 is a lay-out illustrating a unit pixel of the conventional 3T type CMOS image sensor.

FIG. 3 is a cross-sectional view of the conventional CMOS image sensor.

FIG. 4 is a cross-sectional view of a CMOS image sensor according to an embodiment of the present invention.

FIGS. 5A & 5B are cross-sectional views illustrating a method of manufacturing a CMOS image sensor according to an embodiment of the present invention.

FIG. 6 is a cross-sectional view of a CMOS image sensor according to another embodiment of the present invention.

Claims

1. A CMOS image sensor, comprising: a semiconductor substrate including a plurality of photodiodes and a plurality of transistors;a first interlayer dielectric formed on the semiconductor substrate;a metal wiring and a second interlayer dielectric formed on the first interlayer dielectric;a plurality of color filter layers formed within the second interlayer dielectric; anda plurality of micro lenses formed on the plurality of color filter layers.

2. The CMOS image sensor according to claim 1, wherein the plurality of color filter layers are formed in a trench formed at the second interlayer dielectric.

3. The CMOS image sensor according to claim 1, wherein a nitride layer is formed on the second interlayer dielectric between each of the plurality of color filter layers.

4. The CMOS image sensor according to claim 1, wherein the second interlayer dielectric is formed between each of the plurality of color filter layers.

5. A CMOS image sensor, comprising: a semiconductor substrate including a plurality of photodiodes and a plurality of transistors;a first interlayer dielectric formed on a the semiconductor substrate;a metal wiring, a plurality of color filter layers and a second interlayer dielectric formed on the first interlayer dielectric; anda plurality of micro lenses formed on the plurality of color filter layers.

6. The CMOS image sensor according to claim 5, wherein the plurality of color filter layers are formed in a trench formed at the second interlayer dielectric.

7. The CMOS image sensor according to claim 5, wherein a nitride layer is formed on the second interlayer dielectric between each of the plurality of color filter layers.

8. The CMOS image sensor according to claim 5, wherein the second interlayer dielectric is formed between each of the plurality of color filter layers.

9. The CMOS image sensor according to claim 5, wherein each of the plurality of color filter layers are formed directly on the first interlayer dielectric.

10. The CMOS image sensor according to claim 5, wherein a metal wiring is formed between the plurality of color filter layers.

11. A method of manufacturing a CMOS image sensor, comprising: forming a plurality of photodiodes and a plurality of transistors on a semiconductor substrate;forming a first interlayer dielectric on the semiconductor substrate including the plurality of the photodiodes and the plurality of the transistors;forming a metal wiring on the first interlayer dielectric;forming a second interlayer dielectric on the first interlayer dielectric and the metal wiring;forming a trench on the second interlayer dielectric;forming a plurality of color filter layers in the trench; andforming a plurality of micro lenses on the plurality of the color filter layers.

12. The method according to claim 11, further comprising forming a nitride layer on the second interlayer dielectric.

13. The method according to claim 12, wherein the nitride layer is etched during forming a trench on the second interlayer dielectric.

14. The method according to claim 11, wherein the second interlayer dielectric is formed between each of the plurality color filter layers.

15. The method according to claim 11, wherein the plurality of color filter layers are formed directly on the first interlayer dielectric.

16. The method according to claim 11, wherein the metal wiring is formed between the plurality of color filter layers.