The priority application number JP2007-048680, Image Sensor, Feb. 28, 2007, Toshikazu Ohno, upon which this patent application is based is hereby incorporated by reference.
1. Field of the Invention
The present invention relates to an image sensor, and more particularly, it relates to an image sensor in which charges stored in pixels are mixed.
2. Description of the Background Art
An image sensor in which charges stored in pixels are mixed is known in general.
There is disclosed an image sensor comprising a plurality of pixels arranged in the form of a matrix, a vertical shift register vertically transferring information charges generated in the pixels, and a horizontal shift register horizontally transferring the information charges transferred from the vertical shift register, wherein the information charges are read from the pixels and thereafter the information charges of each three pixels are added and composited in the horizontal transfer direction. In this conventional image sensor, the information charges of each three pixels are added and composited and hence photosensitivity of the image sensor is improved and transfer time of the information charges can be reduced.
There is disclosed an image sensor comprising a plurality of pixels arranged in the form of a matrix, a vertical shift register vertically transferring information charges generated in the pixels, and a horizontal shift register horizontally transferring the information charges transferred from the vertical shift register, wherein the information charges are read from the pixels and thereafter the information charges corresponding to the central pixel among the information charges of each consecutive three pixels are ejected on the way to the vertical transfer and the information charges of each remaining two pixels are added and composited in the vertical transfer direction.
An image sensor according to an aspect of the present invention comprises a plurality of pixels having a plurality of color sensitivity characteristics, and a mixing portion for mixing charges stored in a plurality of the pixels having the same color sensitivity characteristic, provided adjacent to a plurality of the pixels having the same color sensitivity characteristic.
The foregoing and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.
Embodiments of the present invention will be hereinafter described with reference to the drawings.
A structure of an image region 100 of an image sensor according to a first embodiment will be described with reference to
In the image region 100 of the image sensor according to the first embodiment, pixels 1 having different color sensitivity characteristics, i.e., red (R), green (G) and blue (B) color sensitivity characteristics are arranged in the form of a matrix, as shown in
Rows in which groups of three pixels 1 having the same color sensitivity characteristic adjacent to each other in the L-shape are aligned in a row direction (direction X in
As shown in
An operation of the image sensor according to the first embodiment of the present invention will be now described with reference to
Charges stored in the photodiodes 2 (see
As shown in
A high voltage allowing multiplication of charges is applied to the multiplication gate electrodes 5, thereby multiplying the number of charges stored under the multiplication gate electrodes 5. Thus, long exposure time is not required for earning sufficient photosensitivity (quantity of charges) even when the amount of light is not stuffiest, and hence wobbling of an object in taking an image of the object moving at a high speed can be suppressed. Thereafter multiplied charges are read, thereby obtaining an image. When the amount of light is sufficient, charges are neither mixed nor multiplied and neither mixed nor multiplied charges stored in the pixels 1 are read.
Alternatively, both of the charges mixed and multiplied and the neither mixed nor multiplied charges may be read.
According to the first embodiment, as hereinabove described, the multiplication gate electrodes 5 for mixing the charges stored in the plurality of pixels 1 having the same color sensitivity characteristic are provided in the vicinity of the plurality of pixels 1 having the same color sensitivity characteristic, whereby the charges stored in the pixels 1 can be mixed in the vicinity of the plurality of pixels 1 having the same color sensitivity characteristic and hence the mixed charges can be read. Thus, photosensitivity of the image sensor can be improved, and noise generated when reading the charges can be reduced since the number of the read of the charges is reduced as compared with a case where the charges are mixed after reading the charges stored in the pixels 1.
According to the first embodiment, as hereinabove described, the mixed and multiplied charges stored in the pixels 1 are read when the amount of light is not sufficient, whereby an image having high photosensitivity can be obtained When the amount of light is sufficient, charges are neither mixed nor multiplied and the neither mixed nor multiplied charges stored in the pixels 1 are read, whereby an image having high resolution can be obtained.
According to the first embodiment, as hereinabove described, the pixels 1 where the stored charges are mixed between the plurality of pixels 1 and the pixels 1 where the stored charges are not mixed mixedly exist, and both of the mixed and multiplied charges and the neither mixed nor multiplied charges are read. Thus, in the pixels 1 where the multiplied charges are saturated in a screen, an image on the saturated screen can be reproduced by estimating a quantity of the saturated charges stored in the pixel from a quantity of the neither mixed nor multiplied charges stored in the pixels 1. Consequently, a dynamic range of the image sensor can be enlarged.
According to the first embodiment, as hereinabove described, the multiplication gate electrodes 5 are arranged between the pixels 1 adjacent to each other, whereby the multiplication gate electrodes 5 can be minimized as compared with a case where the charges stored in pixels 1 not adjacent to each other and multiplied.
According to the first embodiment, as hereinabove described, the arrangement of the mixed charges is the Bayer arrangement, that is, the row where the red (R) and the green (G) alternately appear and the row where the green (G) and the blue (B) alternately appear alternately appear. Thus, color reproduction is excellent and a color image having high photosensitivity can be obtained.
According to the first embodiment, as hereinabove described, the plurality of pixels 1 having the same color sensitivity characteristic, where charges stored in the pixels 1 are mixed, are arranged adjacent to each other in the oblique direction in plan view, whereby the pixels 1 having the same color sensitivity characteristic, where charges are mixed, are arranged adjacent to each other dissimilarly to the Bayer arrangement in which pixels 1 having the red (R) color sensitivity characteristic are arranged with the pixels having the green (G) color sensitivity characteristic therebetween and pixels having the blue (B) color sensitivity characteristic are arranged with the pixels having the green (G) color sensitivity characteristic therebetween among the red (R), the blue (B) and the green (G) color sensitivity characteristics, and hence the charges can be mixed in a narrow range. Thus, the arrangement of the charges after mixture can be thicker than the Bayer arrangement and hence resolution of the image sensor can be enhanced.
According to the first embodiment, as hereinabove described, the switch gate electrodes 3a are provided between the photodiodes 2 and the read portions 4, and the switch gate electrodes 3b are provided between the photodiodes 2 and the multiplication gate electrodes 5, whereby charges can be easily transferred under the multiplication gate electrodes 5 from the photodiodes 2 with the switch gate electrode 3a and the switch gate electrode 3b.
According to the first embodiment, as hereinabove described, the multiplication gate electrodes 5 have a function of mixing the stored charges and multiplying the same, whereby photosensitivity of the image sensor can be greatly enhanced without deteriorating resolution of the image sensor as compared with a case of only mixing the charges.
In a second embodiment, a structure of an image region 200 of an image sensor in which the number of pixels 11 where charges are mixed is switched in response to object information will be described with reference to
In the image region 200 of the image sensor according to the second embodiment, pixels 11 having different color sensitivity characteristics, i.e., red (R), green (G) and blue (B) color sensitivity characteristics are arranged such that the pixels 11 having the same color sensitivity characteristic are adjacent to each other in an oblique direction as shown in
An operation of the image sensor according to the second embodiment of the present invention will be now described with reference to
As shown in
As shown in
According to the second embodiment, as hereinabove described, the number of the pixels 11 where the charges are mixed is switched in response to the object information, whereby an optimum image according to the object information such as the luminance or the object moving speed can be easily obtained.
The remaining effects of the second embodiment are similar to those of the aforementioned first embodiment.
In a third embodiment, a structure of an image region 300 of an image sensor in which the number of pixels 11 where charges are multiplied is vary by region in a screen will be described with reference to
The image region 300 of the image sensor according to the third embodiment is formed such that the number of pixels 21 (see
An operation of the image sensor according to the third embodiment of the present invention will be now described with reference to
As shown in
As shown in
According to the third embodiment, as hereinabove described, the image sensor is so formed as to have the region where the charges in the three pixels 21 are mixed, multiplied and read, the region where the charges in the two pixels 21 among the three pixels 21 are mixed, multiplied and read, and the region where the charges in all the pixels 21 are read without multiplication, whereby an optimum image according to the object information such as the luminance or the object moving speed can be easily obtained.
The remaining effects of the third embodiment are similar to those of the aforementioned first embodiment.
In a fourth embodiment, a structure of an image region 400 of an image sensor in which charges stored in each four pixels 31 having the same color sensitivity characteristic are mixed in a mixing region 32 will be described with reference to
In the image region 400 of the image sensor according to the fourth embodiment, the central pixel 31 among each nine pixels 31 of height 3 pixels×width 3 pixels in a Bayer arrangement is placed by the mixing region 32 as shown in
As shown in
An operation of the image sensor according to the third embodiment of the present invention will be now described with reference to
Charges stored in the photodiodes 33 of the four pixels 31 (see
As shown in
A high voltage allowing multiplication of charges is applied to the multiplication gate electrodes 36 (see
Alternatively, both of the charges multiplied and the charges not multiplied may be read. Thus, in the pixels 31 where the multiplied charges are saturated in a screen, an image on the saturated screen can be reproduced by estimating a quantity of the saturated charges stored in the pixel 31 by employing a quantity of the charges not multiplied, stored in pixels 31. Consequently, a dynamic range of the image sensor can be enlarged.
The resolution of the image sensor according to the fourth embodiment is lower than that of the image sensor according to the first embodiment since the mixing regions 32 are provided. According to the forth embodiment, however, the arrangement of the red (R), the green (G) and the blue (B) employed as the color sensitivity characteristics of the pixels 31 in a case of mixing and multiplying the charges is the same as that in a case of neither mixing nor multiplying the charges and hence signal processing after reading the charges stored in the pixels 31 can be easily performed as compared with the case in the first embodiment.
According to the fourth embodiment, as hereinabove described, the mixing regions 32 separately provided from the pixels 31 are provided on regions surrounded by the plurality of pixels 31 where the stored charges are mixed, whereby the multiplication gate electrodes 36 can be easily arranged.
According to the fourth embodiment, as hereinabove described, each mixing region 32 is provided on the region of the central pixel in pixels 31 arranged in a three-row, three-column square, whereby the mixing regions 32 can be easily arranged in the form of a matrix.
According to the fourth embodiment, as hereinabove described, the arrangement of the mixing regions 32 is the Bayer arrangement, whereby the color reproduction is excellent and a color image having high photosensitivity can be obtained.
The remaining effects of the fourth embodiment are similar to those of the aforementioned first embodiment The number of pixels 31 where charges are mixed and multiplied is switched according to object information such as luminance or object moving speed or the region of the image region 400, whereby effects similar to those of the second and third embodiments can be obtained.
Although the present invention has been described and illustrated in detail, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, the spirit and scope of the present invention being limited only by the terms of the appended claims.
For example, while the multiplication gate electrodes each have a function of mixing the charges stored in the pixels and multiplying the same in each of the aforementioned first to fourth embodiments, the present invention is not restricted to this but the multiplication gate electrodes may be replaced by mixing gate electrode having no multiplication function. In this case, photosensitivity is not drastically improved as compared with a case of having a multiplication function, but effects similar to the aforementioned first to fourth embodiments other than the drastic improvement of the photosensitivity can be obtained.
Number | Date | Country | Kind |
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JP2007-48680 | Feb 2007 | JP | national |